IT8423162A0 - Dispositivo di memoria dinamico a semiconduttori a linee di bitripiegate. - Google Patents
Dispositivo di memoria dinamico a semiconduttori a linee di bitripiegate.Info
- Publication number
- IT8423162A0 IT8423162A0 IT8423162A IT2316284A IT8423162A0 IT 8423162 A0 IT8423162 A0 IT 8423162A0 IT 8423162 A IT8423162 A IT 8423162A IT 2316284 A IT2316284 A IT 2316284A IT 8423162 A0 IT8423162 A0 IT 8423162A0
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- semiconductor memory
- dynamic semiconductor
- folded lines
- folded
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58192366A JPS6085492A (ja) | 1983-10-17 | 1983-10-17 | ダイナミツクメモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8423162A0 true IT8423162A0 (it) | 1984-10-16 |
| IT1176975B IT1176975B (it) | 1987-08-26 |
Family
ID=16290082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT23162/84A IT1176975B (it) | 1983-10-17 | 1984-10-16 | Dispositivo di memoria dinamico a semiconduttori a linee di bit ripiegate |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4651306A (it) |
| JP (1) | JPS6085492A (it) |
| KR (1) | KR930000759B1 (it) |
| DE (1) | DE3438069A1 (it) |
| FR (1) | FR2553558B1 (it) |
| GB (2) | GB2149250B (it) |
| HK (2) | HK40890A (it) |
| IT (1) | IT1176975B (it) |
| SG (1) | SG31290G (it) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61110394A (ja) * | 1984-10-31 | 1986-05-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| EP0199458B1 (en) * | 1985-03-18 | 1990-09-05 | Nec Corporation | Memory circuit having an improved writing scheme |
| JPS61296598A (ja) * | 1985-06-21 | 1986-12-27 | Mitsubishi Electric Corp | Ｍｏｓダイナミツクｒａｍのダミ−ワ−ド線駆動回路 |
| JPS6221357A (ja) * | 1985-07-22 | 1987-01-29 | Toshiba Corp | メモリシステム |
| JPS62197992A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Electric Corp | ダイナミツクｒａｍ |
| JPS62200596A (ja) * | 1986-02-26 | 1987-09-04 | Mitsubishi Electric Corp | 半導体メモリ |
| JPS6421788A (en) * | 1987-07-16 | 1989-01-25 | Nec Corp | Semiconductor memory device |
| JP2953708B2 (ja) * | 1989-07-31 | 1999-09-27 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
| JPH07235612A (ja) * | 1994-02-23 | 1995-09-05 | Mitsubishi Electric Corp | 半導体装置のメモリセル構造 |
| DE19703611A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Anwendungsspezifisches integriertes Halbleiterprodukt mit Dummy-Elementen |
| JP2001006373A (ja) * | 1999-06-23 | 2001-01-12 | Hitachi Ltd | 伝送回路とこれを用いた半導体集積回路及び半導体メモリ |
| FR2810150B1 (fr) * | 2000-06-13 | 2002-10-04 | St Microelectronics Sa | Dispositif de memoire vive dynamique et procede de commande d'un acces en lecture d'une telle memoire |
| US6566191B2 (en) * | 2000-12-05 | 2003-05-20 | International Business Machines Corporation | Forming electronic structures having dual dielectric thicknesses and the structure so formed |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2239737B1 (it) * | 1973-08-02 | 1980-12-05 | Texas Instruments Inc | |
| DE3002017C2 (de) * | 1980-01-21 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter Halbleiterspeicher |
| JPS601713B2 (ja) * | 1980-12-25 | 1985-01-17 | 株式会社東芝 | ダイナミックメモリ装置 |
| DE3280064D1 (de) * | 1981-06-29 | 1990-01-18 | Fujitsu Ltd | Dynamische direktzugriffspeicheranordnung. |
| JPS58111183A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | ダイナミツクｒａｍ集積回路装置 |
| US4493056A (en) * | 1982-06-30 | 1985-01-08 | International Business Machines Corporation | RAM Utilizing offset contact regions for increased storage capacitance |
| US4547868A (en) * | 1984-07-26 | 1985-10-15 | Texas Instruments Incorporated | Dummy-cell circuitry for dynamic read/write memory |
-
1983
- 1983-10-17 JP JP58192366A patent/JPS6085492A/ja active Pending
-
1984
- 1984-09-06 GB GB08422521A patent/GB2149250B/en not_active Expired
- 1984-09-19 FR FR8414337A patent/FR2553558B1/fr not_active Expired - Lifetime
- 1984-10-15 KR KR1019840006361A patent/KR930000759B1/ko active IP Right Grant
- 1984-10-16 IT IT23162/84A patent/IT1176975B/it active
- 1984-10-17 DE DE19843438069 patent/DE3438069A1/de not_active Ceased
-
1986
- 1986-04-24 US US06/858,562 patent/US4651306A/en not_active Expired - Fee Related
- 1986-07-02 GB GB08616198A patent/GB2175476B/en not_active Expired
-
1990
- 1990-04-27 SG SG312/90A patent/SG31290G/en unknown
- 1990-05-24 HK HK408/90A patent/HK40890A/xx unknown
- 1990-06-21 HK HK481/90A patent/HK48190A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB8616198D0 (en) | 1986-08-06 |
| SG31290G (en) | 1990-08-03 |
| IT1176975B (it) | 1987-08-26 |
| GB2175476B (en) | 1987-07-15 |
| JPS6085492A (ja) | 1985-05-14 |
| GB2149250B (en) | 1987-07-15 |
| GB2149250A (en) | 1985-06-05 |
| DE3438069A1 (de) | 1985-05-02 |
| GB8422521D0 (en) | 1984-10-10 |
| KR850003046A (ko) | 1985-05-28 |
| HK48190A (en) | 1990-06-29 |
| GB2175476A (en) | 1986-11-26 |
| FR2553558A1 (fr) | 1985-04-19 |
| HK40890A (en) | 1990-06-01 |
| KR930000759B1 (ko) | 1993-02-01 |
| US4651306A (en) | 1987-03-17 |
| FR2553558B1 (fr) | 1991-10-04 |
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