JPS54112131A - Sense amplifier circuit of mos memory - Google Patents

Sense amplifier circuit of mos memory

Info

Publication number
JPS54112131A
JPS54112131A JP2045378A JP2045378A JPS54112131A JP S54112131 A JPS54112131 A JP S54112131A JP 2045378 A JP2045378 A JP 2045378A JP 2045378 A JP2045378 A JP 2045378A JP S54112131 A JPS54112131 A JP S54112131A
Authority
JP
Japan
Prior art keywords
potential
potentials
pulse
couple
phic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2045378A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2045378A priority Critical patent/JPS54112131A/en
Publication of JPS54112131A publication Critical patent/JPS54112131A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a sense amplifier of a MOS memory stable in refresh operation by using a couple of unifirectionally-conductive channel type IGFETs and a couple of reversely-conductive channel type IGFETs with gates and drains connected intersecting. CONSTITUTION:When precharge pulse (phiP) and transfer pulse (phiC) both become high in potential, digit line potentials (vD) and (vD'), and nodes A and B are precharged by intermidiate voltage VR of approximate 2V. Before sense operation, potentials (phiW) and (phiDW) of a word line and a dummy word line become high and power supplies of capacity elements CM and CDM change potentials (vD) and (vD'). Because of the low potential of pulse (phic) and the high potential of (phis), the potential of common source point C decreases; either couple of P-type MOSs QK1 and QK2 or of N-type MOSs Qs1 and Qs2 turn ON, and the other couple OFF. With pulse (phic) and boot-up pulse (phiL) high in potential next, potentials (vD) and (vD') become 4V and OV. When the difference between potentials (vD) and (vD') is the largest, potential (phiW) decreases and refresh operation ends, so that it will operate stably.
JP2045378A 1978-02-23 1978-02-23 Sense amplifier circuit of mos memory Pending JPS54112131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2045378A JPS54112131A (en) 1978-02-23 1978-02-23 Sense amplifier circuit of mos memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2045378A JPS54112131A (en) 1978-02-23 1978-02-23 Sense amplifier circuit of mos memory

Publications (1)

Publication Number Publication Date
JPS54112131A true JPS54112131A (en) 1979-09-01

Family

ID=12027482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2045378A Pending JPS54112131A (en) 1978-02-23 1978-02-23 Sense amplifier circuit of mos memory

Country Status (1)

Country Link
JP (1) JPS54112131A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782290A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device
EP0056433A2 (en) * 1981-01-19 1982-07-28 Siemens Aktiengesellschaft Reading circuit for a monolithic integrated semiconductor memory
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
JPS59207485A (en) * 1983-05-11 1984-11-24 Nec Ic Microcomput Syst Ltd Amplifying circuit
JPS60143498A (en) * 1983-12-29 1985-07-29 Mitsubishi Electric Corp Semiconductor input circuit
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
JPS61117792A (en) * 1984-08-02 1986-06-05 テキサス　インスツルメンツ　インコ−ポレイテツド Cmos sensing amplifier with limited instantaneous power
JPS63119095A (en) * 1984-07-26 1988-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Sensing amplifier for semiconductor memory
JPS63211191A (en) * 1987-02-26 1988-09-02 Nec Corp Sense amplifier circuit
JPH023160A (en) * 1988-05-13 1990-01-08 Hitachi Ltd Semiconductor memory
JPH023155A (en) * 1988-05-13 1990-01-08 Hitachi Ltd Semiconductor memory device
JPH03228282A (en) * 1990-10-26 1991-10-09 Hitachi Ltd Semiconductor memory
US5127739A (en) * 1987-04-27 1992-07-07 Texas Instruments Incorporated CMOS sense amplifier with bit line isolation
USRE34026E (en) * 1984-08-02 1992-08-11 Texas Instruments Incorporated CMOS sense amplifier with N-channel sensing
JPH0684359A (en) * 1993-08-13 1994-03-25 Hitachi Ltd Semiconductor memory
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0146956B2 (en) * 1980-11-12 1989-10-11 Tokyo Shibaura Electric Co
JPS5782290A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device
EP0056433A2 (en) * 1981-01-19 1982-07-28 Siemens Aktiengesellschaft Reading circuit for a monolithic integrated semiconductor memory
JPS57138090A (en) * 1981-01-19 1982-08-26 Siemens Ag Monolithic integrated semiconductor memory
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
JPH0424798B2 (en) * 1981-05-13 1992-04-28 Hitachi Ltd
JPS59207485A (en) * 1983-05-11 1984-11-24 Nec Ic Microcomput Syst Ltd Amplifying circuit
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
JPS60143498A (en) * 1983-12-29 1985-07-29 Mitsubishi Electric Corp Semiconductor input circuit
JPS63119095A (en) * 1984-07-26 1988-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Sensing amplifier for semiconductor memory
JPH0424799B2 (en) * 1984-07-26 1992-04-28 Texas Instruments Inc
JPS61117792A (en) * 1984-08-02 1986-06-05 テキサス　インスツルメンツ　インコ−ポレイテツド Cmos sensing amplifier with limited instantaneous power
JPH0150037B2 (en) * 1984-08-02 1989-10-26 Texas Instruments Inc
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier
USRE34026E (en) * 1984-08-02 1992-08-11 Texas Instruments Incorporated CMOS sense amplifier with N-channel sensing
JPS63211191A (en) * 1987-02-26 1988-09-02 Nec Corp Sense amplifier circuit
US5127739A (en) * 1987-04-27 1992-07-07 Texas Instruments Incorporated CMOS sense amplifier with bit line isolation
JPH023160A (en) * 1988-05-13 1990-01-08 Hitachi Ltd Semiconductor memory
JPH0444835B2 (en) * 1988-05-13 1992-07-22 Hitachi Ltd
JPH0456397B2 (en) * 1988-05-13 1992-09-08 Hitachi Ltd
JPH023155A (en) * 1988-05-13 1990-01-08 Hitachi Ltd Semiconductor memory device
JPH03228282A (en) * 1990-10-26 1991-10-09 Hitachi Ltd Semiconductor memory
JPH0557677B2 (en) * 1990-10-26 1993-08-24 Hitachi Ltd
JPH0684359A (en) * 1993-08-13 1994-03-25 Hitachi Ltd Semiconductor memory

Similar Documents

Publication Publication Date Title
JPS54112131A (en) Sense amplifier circuit of mos memory
JPS5572863A (en) Sense amplifier
JPS57127989A (en) Mos static type ram
JPS5619586A (en) Semiconductor memory unit
SE7508311L (en) CHARGE TRANSFER SENSOR CIRCUIT
JPS5730192A (en) Sense amplifying circuit
JPS5363851A (en) Push-pull pulse amplifier circuit
JPS5522238A (en) Decoder circuit
JPS55132595A (en) Semiconductor circuit
JPS54153565A (en) Semiconductor circuit using insulation gate type field effect transistor
JPS5372429A (en) Non-volatile semiconductor memory unit
JPS5538611A (en) Memory circuit
GB1407980A (en) Shift register stage
JPS56140591A (en) Semiconductor memeory device
JPS5472641A (en) Voltage detection circuit
JPS6016035B2 (en) Width increase circuit
JPS5634184A (en) Semiconductor memory
JPS54101230A (en) Dynamic mos memory circuit
IT1249616B (en) BIT LINE PRELOAD CIRCUIT FOR READING AN EPROM MEMORY CELL.
JPS5493335A (en) Decoder circuit
JPS5423337A (en) Semiconductor memory unit
SU762190A1 (en) Readout amplifier
JPS5461450A (en) Flip flop circuit
JPS5347953A (en) Reference voltage circuit
JPS57195387A (en) Data lien precharging system of memory integrated circuit