JPS5782290A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5782290A
JPS5782290A JP55159270A JP15927080A JPS5782290A JP S5782290 A JPS5782290 A JP S5782290A JP 55159270 A JP55159270 A JP 55159270A JP 15927080 A JP15927080 A JP 15927080A JP S5782290 A JPS5782290 A JP S5782290A
Authority
JP
Japan
Prior art keywords
word line
trs
readout
write
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55159270A
Other languages
Japanese (ja)
Other versions
JPH0146956B2 (en
Inventor
Hide Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55159270A priority Critical patent/JPS5782290A/en
Publication of JPS5782290A publication Critical patent/JPS5782290A/en
Publication of JPH0146956B2 publication Critical patent/JPH0146956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Abstract

PURPOSE:To reduce the time required for readout/write-in, by setting the word line potential to the range smaller than the transfer transistor threshold voltage. CONSTITUTION:A dynamic RAM, is constituted with a word line 12 transmissing a signal from a row decoder 11 horizontally and a bit line 13 is located vertically and a memory cell 14 which connectes between the lines. A signal from the row decoder 11 is supplied to a bootstrap circuit in capacitance C1 and a transistor (TR) T2 via a TRT1 the gate of which is connected to a power supply VDD to drive the word line 12. The end of this word line 12 is connected to a connecting point of TRs T3, T4 in series connection between the power supply VDD and ground, and the potential of the word line 12 rises to the conductance ratio of the TRs T3, T4. Thus, the voltage reaches a voltage required for readout/ write-in a short time.
JP55159270A 1980-11-12 1980-11-12 Semiconductor storage device Granted JPS5782290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159270A JPS5782290A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159270A JPS5782290A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5782290A true JPS5782290A (en) 1982-05-22
JPH0146956B2 JPH0146956B2 (en) 1989-10-11

Family

ID=15690097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159270A Granted JPS5782290A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5782290A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819791A (en) * 1981-07-27 1983-02-04 Seiko Epson Corp Semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362433A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Sense circuit
JPS54112131A (en) * 1978-02-23 1979-09-01 Nec Corp Sense amplifier circuit of mos memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362433A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Sense circuit
JPS54112131A (en) * 1978-02-23 1979-09-01 Nec Corp Sense amplifier circuit of mos memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819791A (en) * 1981-07-27 1983-02-04 Seiko Epson Corp Semiconductor storage device
JPH0253880B2 (en) * 1981-07-27 1990-11-20 Seiko Epson Corp

Also Published As

Publication number Publication date
JPH0146956B2 (en) 1989-10-11

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