KR920009015A - 반도체 칩의 보호회로 - Google Patents

반도체 칩의 보호회로 Download PDF

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Publication number
KR920009015A
KR920009015A KR1019900017381A KR900017381A KR920009015A KR 920009015 A KR920009015 A KR 920009015A KR 1019900017381 A KR1019900017381 A KR 1019900017381A KR 900017381 A KR900017381 A KR 900017381A KR 920009015 A KR920009015 A KR 920009015A
Authority
KR
South Korea
Prior art keywords
semiconductor chip
protection circuit
power supply
ground
supply terminal
Prior art date
Application number
KR1019900017381A
Other languages
English (en)
Inventor
장득수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900017381A priority Critical patent/KR920009015A/ko
Priority to JP3097475A priority patent/JPH04234156A/ja
Priority to US07/706,803 priority patent/US5144519A/en
Publication of KR920009015A publication Critical patent/KR920009015A/ko
Priority to KR2019930013350U priority patent/KR930006943Y1/ko

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

반도체 칩의 보호회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 보호회로의 일실시예도,
제4도는 본 발명의 보호회로의 다른 실시예도.

Claims (4)

  1. 입력핀(11)을 전송게이트(TG11)을 통해 내부회로(12)의 입력단자에 접속하여 그 접속점과 전원단자(VDD)및 접지 사이에 전송게이트(TG12)(TG13)를 각기 접속하고, 내부회로(12)의 출력단자와 전원단자(VDD)및 접지 사이에 전송게이트(TG14)(TG15)를 각기 접속하며, 전원단자(VDD)와 접지 사이에 전송게이트(TG16)를 접속하여 구성함을 특징으로 하는 반도체 칩의 보호회로.
  2. 제1항에 있어서, 전송 게이트(TG12,TG13)(TG14,TG15)(TG16)에 동작 바이어스 전원을 공급하는 인버터(IV11)(IV12)(IV13)를 구비한 것을 특징으로 하는 반도체 칩의 보호회로.
  3. 제2항에 있어서, 인버터(IV11)(IV12)(IV13)의 입력단자를 접지측에 연결하여 구성함을 특징으로 하는 반도체 칩의 보호회로.
  4. 제2항에 있어서, 인버터(IV11)(IV12)(IV13)의 입력단자를 전원단자(VDD)측에 연결하여 구성함을 특징으로 하는 반도체 칩의 보호회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900017381A 1990-10-29 1990-10-29 반도체 칩의 보호회로 KR920009015A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900017381A KR920009015A (ko) 1990-10-29 1990-10-29 반도체 칩의 보호회로
JP3097475A JPH04234156A (ja) 1990-10-29 1991-04-26 半導体チップの保護回路
US07/706,803 US5144519A (en) 1990-10-29 1991-05-29 Electrostatic protection circuit for semiconductor chip
KR2019930013350U KR930006943Y1 (ko) 1990-10-29 1993-07-19 반도체 칩의 보호회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017381A KR920009015A (ko) 1990-10-29 1990-10-29 반도체 칩의 보호회로

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR2019930013350U Division KR930006943Y1 (ko) 1990-10-29 1993-07-19 반도체 칩의 보호회로

Publications (1)

Publication Number Publication Date
KR920009015A true KR920009015A (ko) 1992-05-28

Family

ID=19305333

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019900017381A KR920009015A (ko) 1990-10-29 1990-10-29 반도체 칩의 보호회로
KR2019930013350U KR930006943Y1 (ko) 1990-10-29 1993-07-19 반도체 칩의 보호회로

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR2019930013350U KR930006943Y1 (ko) 1990-10-29 1993-07-19 반도체 칩의 보호회로

Country Status (3)

Country Link
US (1) US5144519A (ko)
JP (1) JPH04234156A (ko)
KR (2) KR920009015A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101508754B1 (ko) * 2014-10-22 2015-04-08 (주)제이엔엘테크 극판 2매 검출기

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
JP3400215B2 (ja) * 1995-11-21 2003-04-28 沖電気工業株式会社 半導体装置
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5726844A (en) * 1996-04-01 1998-03-10 Motorola, Inc. Protection circuit and a circuit for a semiconductor-on-insulator device
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
KR100249162B1 (ko) * 1996-12-31 2000-03-15 김영환 정전기(eds)보호회로
US6046897A (en) * 1997-09-29 2000-04-04 Motorola, Inc. Segmented bus architecture (SBA) for electrostatic discharge (ESD) protection
JP2001244418A (ja) * 2000-03-01 2001-09-07 Nec Corp 半導体集積回路装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947727A (en) * 1974-12-10 1976-03-30 Rca Corporation Protection circuit for insulated-gate field-effect transistors
JPS579756Y2 (ko) * 1975-01-29 1982-02-24
JPS5780774A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPH0693495B2 (ja) * 1985-12-13 1994-11-16 ロ−ム株式会社 半導体装置の保護回路
JPS639222A (ja) * 1986-06-30 1988-01-14 Toshiba Corp トランスフアゲ−ト回路
US4728932A (en) * 1986-07-25 1988-03-01 Honeywell Inc. Detector for capacitive sensing devices
US4930037A (en) * 1989-02-16 1990-05-29 Advaced Micro Devices, Inc. Input voltage protection system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101508754B1 (ko) * 2014-10-22 2015-04-08 (주)제이엔엘테크 극판 2매 검출기

Also Published As

Publication number Publication date
JPH04234156A (ja) 1992-08-21
US5144519A (en) 1992-09-01
KR930006943Y1 (ko) 1993-10-09

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