KR910013557A - 반도체 칩의 입출력 구동특성의 개선방법 - Google Patents

반도체 칩의 입출력 구동특성의 개선방법 Download PDF

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Publication number
KR910013557A
KR910013557A KR1019890020601A KR890020601A KR910013557A KR 910013557 A KR910013557 A KR 910013557A KR 1019890020601 A KR1019890020601 A KR 1019890020601A KR 890020601 A KR890020601 A KR 890020601A KR 910013557 A KR910013557 A KR 910013557A
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KR
South Korea
Prior art keywords
input
improvement
semiconductor chips
output driving
driving characteristics
Prior art date
Application number
KR1019890020601A
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English (en)
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KR920010199B1 (ko
Inventor
서보성
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019890020601A priority Critical patent/KR920010199B1/ko
Publication of KR910013557A publication Critical patent/KR910013557A/ko
Application granted granted Critical
Publication of KR920010199B1 publication Critical patent/KR920010199B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10Aspects relating to interfaces of memory device to external buses
    • G11C2207/105Aspects related to pads, pins or terminals

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

내용 없음.

Description

반도체 칩의 입출력 구동특성의 개선방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 핀접속도.

Claims (1)

  1. 반도체 메모리장치에 있어서, 입출력단의 전원단자를 추가시키고, 상기 입출력단의 전원배선을 반도체 메모리장치의 다른 주변회로들의 전원배선과 분리시킴을 특징으로 하는 반도체 메모리장치의 입출력 구동특성 개선방법.
    ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
KR1019890020601A 1989-12-30 1989-12-30 반도체 칩의 입출력단 구동특성의 개선방법 KR920010199B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890020601A KR920010199B1 (ko) 1989-12-30 1989-12-30 반도체 칩의 입출력단 구동특성의 개선방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020601A KR920010199B1 (ko) 1989-12-30 1989-12-30 반도체 칩의 입출력단 구동특성의 개선방법

Publications (2)

Publication Number Publication Date
KR910013557A true KR910013557A (ko) 1991-08-08
KR920010199B1 KR920010199B1 (ko) 1992-11-21

Family

ID=19294648

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020601A KR920010199B1 (ko) 1989-12-30 1989-12-30 반도체 칩의 입출력단 구동특성의 개선방법

Country Status (1)

Country Link
KR (1) KR920010199B1 (ko)

Also Published As

Publication number Publication date
KR920010199B1 (ko) 1992-11-21

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