KR880000965A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR880000965A
KR880000965A KR870003516A KR870003516A KR880000965A KR 880000965 A KR880000965 A KR 880000965A KR 870003516 A KR870003516 A KR 870003516A KR 870003516 A KR870003516 A KR 870003516A KR 880000965 A KR880000965 A KR 880000965A
Authority
KR
South Korea
Prior art keywords
mode
semiconductor memory
operation mode
operation modes
selection circuit
Prior art date
Application number
KR870003516A
Other languages
English (en)
Other versions
KR920006011B1 (ko
Inventor
가즈도시 히라야마
히데유기 오자끼
히데도 히다까
가즈야스 아지시마
Original Assignee
시끼 모리야
미쓰비시전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시끼 모리야, 미쓰비시전기 주식회사 filed Critical 시끼 모리야
Publication of KR880000965A publication Critical patent/KR880000965A/ko
Application granted granted Critical
Publication of KR920006011B1 publication Critical patent/KR920006011B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
    • G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits

Abstract

내용 없음

Description

반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 기억장치의 동작모드(mode)선택회로도를 표시한 회로도. 제2도는 이 발명의 다른 실시예에 의한 반도체 기억장치의 동작모드 선택회로를 표시하는 회로도. 제3도는 제1도 또는 제2도의 동작모드선택회로를 가진 반도체 기억장치를 표시하는 블록도.

Claims (2)

  1. 메모리칩상에 설치되고, 스타틱컬럼모드, 고속페이지모드, 니블모드 등 2종류 이상의 여러가지 판독, 써넣기 동작모드를 실현하기 위한 상기 각 동작모드에 대응하여 설치된 복수의 동작모드제어회로와, 상기 메모리칩상에 설치되고 레이저 트리머장치 또는 전기회로에 의하여 절단되는 퓨즈를 가지며 상기 동작모드선택회로 등을 구비함을 특징으로 하는 반도체 기억회로.
  2. 청구범위 제1항에 있어서, 상기 동작모드의 선택은, 배선에 의하여도 가능한 것을 특징으로 하는 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870003516A 1986-06-23 1987-04-13 반도체기억장치의 동작모드선택회로 KR920006011B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP146687 1986-06-23
JP61146687A JPS634492A (ja) 1986-06-23 1986-06-23 半導体記憶装置
JP86-146687 1987-06-23

Publications (2)

Publication Number Publication Date
KR880000965A true KR880000965A (ko) 1988-03-30
KR920006011B1 KR920006011B1 (ko) 1992-07-25

Family

ID=15413306

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870003516A KR920006011B1 (ko) 1986-06-23 1987-04-13 반도체기억장치의 동작모드선택회로

Country Status (5)

Country Link
US (1) US4833650A (ko)
JP (1) JPS634492A (ko)
KR (1) KR920006011B1 (ko)
DE (1) DE3716518A1 (ko)
FR (1) FR2600453B1 (ko)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003526B1 (ko) * 1992-10-02 1996-03-14 삼성전자주식회사 반도체 메모리장치
US5528551A (en) * 1987-05-21 1996-06-18 Texas Instruments Inc Read/write memory with plural memory cell write capability at a selected row address
JP2623460B2 (ja) * 1987-09-16 1997-06-25 株式会社日立製作所 半導体記憶装置
KR900008554B1 (ko) * 1988-04-23 1990-11-24 삼성전자 주식회사 메모리 동작모드 선택회로
JPH0281619A (ja) * 1988-09-19 1990-03-22 Toray Ind Inc 熱可塑性樹脂フィルムのキャスト方法
US4987325A (en) * 1988-07-13 1991-01-22 Samsung Electronics Co., Ltd. Mode selecting circuit for semiconductor memory device
US5083293A (en) * 1989-01-12 1992-01-21 General Instrument Corporation Prevention of alteration of data stored in secure integrated circuit chip memory
JPH0611804B2 (ja) * 1989-03-01 1994-02-16 東レ株式会社 熱可塑性フィルムの表面処理方法
JPH078529B2 (ja) * 1989-03-13 1995-02-01 東レ株式会社 磁気記録媒体用二軸配向ポリエステルフィルムの製造方法
US5217917A (en) * 1990-03-20 1993-06-08 Hitachi, Ltd. Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor
US5113511A (en) * 1989-06-02 1992-05-12 Atari Corporation System for dynamically providing predicted high/slow speed accessing memory to a processing unit based on instructions
DE58908287D1 (de) * 1989-06-30 1994-10-06 Siemens Ag Integrierte Schaltungsanordnung.
US4970418A (en) * 1989-09-26 1990-11-13 Apple Computer, Inc. Programmable memory state machine for providing variable clocking to a multimode memory
IL96808A (en) * 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
US5780918A (en) * 1990-05-22 1998-07-14 Seiko Epson Corporation Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same
EP0492776B1 (en) * 1990-12-25 1998-05-13 Mitsubishi Denki Kabushiki Kaisha A semiconductor memory device with a large storage capacity memory and a fast speed memory
US5587964A (en) * 1991-06-28 1996-12-24 Digital Equipment Corporation Page mode and nibble mode DRAM
JP2856988B2 (ja) * 1992-08-21 1999-02-10 株式会社東芝 半導体集積回路
US6279116B1 (en) 1992-10-02 2001-08-21 Samsung Electronics Co., Ltd. Synchronous dynamic random access memory devices that utilize clock masking signals to control internal clock signal generation
US5355344A (en) * 1992-11-13 1994-10-11 Sgs-Thomson Microelectronics, Inc. Structure for using a portion of an integrated circuit die
JP2888081B2 (ja) * 1993-03-04 1999-05-10 日本電気株式会社 半導体記憶装置
JP3344494B2 (ja) * 1993-03-23 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション ページモードを有するシングルクロックメモリ
US5418756A (en) * 1993-09-30 1995-05-23 Sgs-Thomson Microelectronics, Inc. Edge transition detection disable circuit to alter memory device operating characteristics
US5457659A (en) * 1994-07-19 1995-10-10 Micron Technology, Inc. Programmable dynamic random access memory (DRAM)
JP3526100B2 (ja) * 1995-03-06 2004-05-10 株式会社ルネサステクノロジ モード設定回路
JPH08321173A (ja) * 1995-05-23 1996-12-03 Mitsubishi Electric Corp 半導体メモリ
US5657293A (en) * 1995-08-23 1997-08-12 Micron Technology, Inc. Integrated circuit memory with back end mode disable
JP2786152B2 (ja) * 1996-04-25 1998-08-13 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
US6608792B2 (en) * 2000-11-09 2003-08-19 Texas Instruments Incorporated Method and apparatus for storing data in an integrated circuit
DE10056590A1 (de) * 2000-11-15 2002-05-23 Philips Corp Intellectual Pty Schaltungsanordnung
US7299327B2 (en) * 2005-02-18 2007-11-20 International Business Machines Corporation Content-on-demand memory key with positive access evidence feature
JP2019134693A (ja) * 2018-02-05 2019-08-15 株式会社マキタ ヘッジトリマ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2948159C2 (de) * 1979-11-29 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierter Speicherbaustein mit wählbaren Betriebsfunktionen
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
US4446534A (en) * 1980-12-08 1984-05-01 National Semiconductor Corporation Programmable fuse circuit
JPS5956284A (ja) * 1982-09-24 1984-03-31 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS59135695A (ja) * 1983-01-24 1984-08-03 Mitsubishi Electric Corp 半導体記憶装置
US4586167A (en) * 1983-01-24 1986-04-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
DE3318123A1 (de) * 1983-05-18 1984-11-22 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
US4685084A (en) * 1985-06-07 1987-08-04 Intel Corporation Apparatus for selecting alternate addressing mode and read-only memory
JPS62139198A (ja) * 1985-12-11 1987-06-22 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR920006011B1 (ko) 1992-07-25
US4833650A (en) 1989-05-23
DE3716518C2 (ko) 1991-07-04
FR2600453A1 (fr) 1987-12-24
FR2600453B1 (fr) 1993-12-03
JPS634492A (ja) 1988-01-09
DE3716518A1 (de) 1988-01-14

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