KR880000965A - 반도체 기억장치 - Google Patents
반도체 기억장치 Download PDFInfo
- Publication number
- KR880000965A KR880000965A KR870003516A KR870003516A KR880000965A KR 880000965 A KR880000965 A KR 880000965A KR 870003516 A KR870003516 A KR 870003516A KR 870003516 A KR870003516 A KR 870003516A KR 880000965 A KR880000965 A KR 880000965A
- Authority
- KR
- South Korea
- Prior art keywords
- mode
- semiconductor memory
- operation mode
- operation modes
- selection circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
- G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 기억장치의 동작모드(mode)선택회로도를 표시한 회로도. 제2도는 이 발명의 다른 실시예에 의한 반도체 기억장치의 동작모드 선택회로를 표시하는 회로도. 제3도는 제1도 또는 제2도의 동작모드선택회로를 가진 반도체 기억장치를 표시하는 블록도.
Claims (2)
- 메모리칩상에 설치되고, 스타틱컬럼모드, 고속페이지모드, 니블모드 등 2종류 이상의 여러가지 판독, 써넣기 동작모드를 실현하기 위한 상기 각 동작모드에 대응하여 설치된 복수의 동작모드제어회로와, 상기 메모리칩상에 설치되고 레이저 트리머장치 또는 전기회로에 의하여 절단되는 퓨즈를 가지며 상기 동작모드선택회로 등을 구비함을 특징으로 하는 반도체 기억회로.
- 청구범위 제1항에 있어서, 상기 동작모드의 선택은, 배선에 의하여도 가능한 것을 특징으로 하는 반도체 기억장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP146687 | 1986-06-23 | ||
JP61146687A JPS634492A (ja) | 1986-06-23 | 1986-06-23 | 半導体記憶装置 |
JP86-146687 | 1987-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880000965A true KR880000965A (ko) | 1988-03-30 |
KR920006011B1 KR920006011B1 (ko) | 1992-07-25 |
Family
ID=15413306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870003516A KR920006011B1 (ko) | 1986-06-23 | 1987-04-13 | 반도체기억장치의 동작모드선택회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4833650A (ko) |
JP (1) | JPS634492A (ko) |
KR (1) | KR920006011B1 (ko) |
DE (1) | DE3716518A1 (ko) |
FR (1) | FR2600453B1 (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960003526B1 (ko) | 1992-10-02 | 1996-03-14 | 삼성전자주식회사 | 반도체 메모리장치 |
US5528551A (en) * | 1987-05-21 | 1996-06-18 | Texas Instruments Inc | Read/write memory with plural memory cell write capability at a selected row address |
JP2623460B2 (ja) * | 1987-09-16 | 1997-06-25 | 株式会社日立製作所 | 半導体記憶装置 |
KR900008554B1 (ko) * | 1988-04-23 | 1990-11-24 | 삼성전자 주식회사 | 메모리 동작모드 선택회로 |
JPH0281619A (ja) * | 1988-09-19 | 1990-03-22 | Toray Ind Inc | 熱可塑性樹脂フィルムのキャスト方法 |
US4987325A (en) * | 1988-07-13 | 1991-01-22 | Samsung Electronics Co., Ltd. | Mode selecting circuit for semiconductor memory device |
US5083293A (en) * | 1989-01-12 | 1992-01-21 | General Instrument Corporation | Prevention of alteration of data stored in secure integrated circuit chip memory |
JPH0611804B2 (ja) * | 1989-03-01 | 1994-02-16 | 東レ株式会社 | 熱可塑性フィルムの表面処理方法 |
JPH078529B2 (ja) * | 1989-03-13 | 1995-02-01 | 東レ株式会社 | 磁気記録媒体用二軸配向ポリエステルフィルムの製造方法 |
US5217917A (en) * | 1990-03-20 | 1993-06-08 | Hitachi, Ltd. | Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor |
US5113511A (en) * | 1989-06-02 | 1992-05-12 | Atari Corporation | System for dynamically providing predicted high/slow speed accessing memory to a processing unit based on instructions |
DE58908287D1 (de) * | 1989-06-30 | 1994-10-06 | Siemens Ag | Integrierte Schaltungsanordnung. |
US4970418A (en) * | 1989-09-26 | 1990-11-13 | Apple Computer, Inc. | Programmable memory state machine for providing variable clocking to a multimode memory |
IL96808A (en) * | 1990-04-18 | 1996-03-31 | Rambus Inc | Introductory / Origin Circuit Agreed Using High-Performance Brokerage |
US5780918A (en) * | 1990-05-22 | 1998-07-14 | Seiko Epson Corporation | Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same |
EP1293906A3 (en) * | 1990-12-25 | 2004-05-19 | Mitsubishi Denki Kabushiki Kaisha | A semiconductor memory device with a large storage capacity memory and a fast speed memory |
US5587964A (en) * | 1991-06-28 | 1996-12-24 | Digital Equipment Corporation | Page mode and nibble mode DRAM |
JP2856988B2 (ja) * | 1992-08-21 | 1999-02-10 | 株式会社東芝 | 半導体集積回路 |
US6279116B1 (en) | 1992-10-02 | 2001-08-21 | Samsung Electronics Co., Ltd. | Synchronous dynamic random access memory devices that utilize clock masking signals to control internal clock signal generation |
US5355344A (en) * | 1992-11-13 | 1994-10-11 | Sgs-Thomson Microelectronics, Inc. | Structure for using a portion of an integrated circuit die |
JP2888081B2 (ja) * | 1993-03-04 | 1999-05-10 | 日本電気株式会社 | 半導体記憶装置 |
JP3344494B2 (ja) * | 1993-03-23 | 2002-11-11 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ページモードを有するシングルクロックメモリ |
US5418756A (en) * | 1993-09-30 | 1995-05-23 | Sgs-Thomson Microelectronics, Inc. | Edge transition detection disable circuit to alter memory device operating characteristics |
US5457659A (en) * | 1994-07-19 | 1995-10-10 | Micron Technology, Inc. | Programmable dynamic random access memory (DRAM) |
JP3526100B2 (ja) * | 1995-03-06 | 2004-05-10 | 株式会社ルネサステクノロジ | モード設定回路 |
JPH08321173A (ja) * | 1995-05-23 | 1996-12-03 | Mitsubishi Electric Corp | 半導体メモリ |
US5657293A (en) * | 1995-08-23 | 1997-08-12 | Micron Technology, Inc. | Integrated circuit memory with back end mode disable |
JP2786152B2 (ja) * | 1996-04-25 | 1998-08-13 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
US6608792B2 (en) * | 2000-11-09 | 2003-08-19 | Texas Instruments Incorporated | Method and apparatus for storing data in an integrated circuit |
DE10056590A1 (de) | 2000-11-15 | 2002-05-23 | Philips Corp Intellectual Pty | Schaltungsanordnung |
US7299327B2 (en) * | 2005-02-18 | 2007-11-20 | International Business Machines Corporation | Content-on-demand memory key with positive access evidence feature |
JP2019134693A (ja) * | 2018-02-05 | 2019-08-15 | 株式会社マキタ | ヘッジトリマ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2948159C2 (de) * | 1979-11-29 | 1983-10-27 | Siemens AG, 1000 Berlin und 8000 München | Integrierter Speicherbaustein mit wählbaren Betriebsfunktionen |
JPS5685934A (en) * | 1979-12-14 | 1981-07-13 | Nippon Telegr & Teleph Corp <Ntt> | Control signal generating circuit |
US4446534A (en) * | 1980-12-08 | 1984-05-01 | National Semiconductor Corporation | Programmable fuse circuit |
JPS5956284A (ja) * | 1982-09-24 | 1984-03-31 | Hitachi Micro Comput Eng Ltd | 半導体記憶装置 |
US4586167A (en) * | 1983-01-24 | 1986-04-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
JPS59135695A (ja) * | 1983-01-24 | 1984-08-03 | Mitsubishi Electric Corp | 半導体記憶装置 |
DE3318123A1 (de) * | 1983-05-18 | 1984-11-22 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers |
US4590388A (en) * | 1984-04-23 | 1986-05-20 | At&T Bell Laboratories | CMOS spare decoder circuit |
US4685084A (en) * | 1985-06-07 | 1987-08-04 | Intel Corporation | Apparatus for selecting alternate addressing mode and read-only memory |
JPS62139198A (ja) * | 1985-12-11 | 1987-06-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1986
- 1986-06-23 JP JP61146687A patent/JPS634492A/ja active Pending
-
1987
- 1987-04-02 US US07/034,094 patent/US4833650A/en not_active Expired - Fee Related
- 1987-04-13 KR KR1019870003516A patent/KR920006011B1/ko not_active IP Right Cessation
- 1987-05-18 DE DE19873716518 patent/DE3716518A1/de active Granted
- 1987-06-22 FR FR8708731A patent/FR2600453B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS634492A (ja) | 1988-01-09 |
DE3716518C2 (ko) | 1991-07-04 |
FR2600453A1 (fr) | 1987-12-24 |
DE3716518A1 (de) | 1988-01-14 |
KR920006011B1 (ko) | 1992-07-25 |
US4833650A (en) | 1989-05-23 |
FR2600453B1 (fr) | 1993-12-03 |
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A201 | Request for examination | ||
E601 | Decision to refuse application | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060711 Year of fee payment: 15 |
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EXPY | Expiration of term |