KR890001090A - 메모리 집적회로 - Google Patents

메모리 집적회로 Download PDF

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Publication number
KR890001090A
KR890001090A KR1019880006712A KR880006712A KR890001090A KR 890001090 A KR890001090 A KR 890001090A KR 1019880006712 A KR1019880006712 A KR 1019880006712A KR 880006712 A KR880006712 A KR 880006712A KR 890001090 A KR890001090 A KR 890001090A
Authority
KR
South Korea
Prior art keywords
integrated circuits
memory integrated
memory cell
memory
sense amplifier
Prior art date
Application number
KR1019880006712A
Other languages
English (en)
Other versions
KR910009550B1 (ko
Inventor
가즈오 도꾸시게
Original Assignee
세끼모또 다다히로
니뽄 덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세끼모또 다다히로, 니뽄 덴끼 가부시끼가이샤 filed Critical 세끼모또 다다히로
Publication of KR890001090A publication Critical patent/KR890001090A/ko
Application granted granted Critical
Publication of KR910009550B1 publication Critical patent/KR910009550B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Abstract

내용 없음

Description

메모리 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예를 나타내는 도면.
제2도는 감지 증폭기를 도시하는 도면.
제3도는 열 디코더를 도시하는 도면.

Claims (1)

  1. 복수의 메모리셀군과 각 메모리셀군마다 각각 설치된 감지증폭기군과 소망의 메모리셀군의 복수의 메모리셀에 선택적으로 동일한 정보를 동시에 기록하는 기록회로와, 각 감지증폭기를 활성화하는 활성화 수단을 가지는 것을 특징으로 하는 메모리 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880006712A 1987-06-04 1988-06-04 메모리 집적회로 KR910009550B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-140811 1987-06-04
JP14081187 1987-06-04
JP140811 1987-06-04

Publications (2)

Publication Number Publication Date
KR890001090A true KR890001090A (ko) 1989-03-18
KR910009550B1 KR910009550B1 (ko) 1991-11-21

Family

ID=15277289

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880006712A KR910009550B1 (ko) 1987-06-04 1988-06-04 메모리 집적회로

Country Status (5)

Country Link
US (1) US4879692A (ko)
EP (1) EP0293933B1 (ko)
JP (1) JPH0793002B2 (ko)
KR (1) KR910009550B1 (ko)
DE (1) DE3884859T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040003924A (ko) * 2002-07-04 2004-01-13 조강균 고분자 유기화합물 식물발효를 이용한 야채재배방법과해저저온 발효방법을 이용한 발효김치 제조방법

Families Citing this family (31)

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US5280448A (en) * 1987-11-18 1994-01-18 Sony Corporation Dynamic memory with group bit lines and associated bit line group selector
JPH0770212B2 (ja) * 1988-07-19 1995-07-31 日本電気株式会社 半導体メモリ回路
JPH07101554B2 (ja) * 1988-11-29 1995-11-01 三菱電機株式会社 半導体記憶装置およびそのデータ転送方法
NL8802973A (nl) * 1988-12-02 1990-07-02 Philips Nv Geintegreerde geheugenschakeling.
US5251177A (en) * 1989-01-23 1993-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device having an improved refresh operation
EP0385389B1 (en) * 1989-02-27 1995-06-28 Nec Corporation Semiconductor integrated circuit memory enabling memory write masking
DE69033262T2 (de) * 1989-04-13 2000-02-24 Sandisk Corp EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
JP2608140B2 (ja) * 1989-05-17 1997-05-07 三菱電機株式会社 半導体ダイナミックｒａｍ
EP0446847B1 (en) * 1990-03-12 1998-06-17 Nec Corporation Semiconductor memory device having improved write function
JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
US5119331A (en) * 1990-09-04 1992-06-02 Nec Electronics Inc. Segmented flash write
US5333121A (en) * 1990-09-20 1994-07-26 Siemens Aktiengesellschaft Dynamic semiconductor memory having local read amplifier driver circuits which are optimized with respect to their drive function
JPH04268287A (ja) * 1991-02-22 1992-09-24 Nec Ic Microcomput Syst Ltd 半導体メモリ回路
JPH04278288A (ja) * 1991-03-07 1992-10-02 Toshiba Corp 半導体記憶装置　
JPH04298883A (ja) * 1991-03-26 1992-10-22 Nec Ic Microcomput Syst Ltd 半導体記憶回路
JP3178859B2 (ja) * 1991-06-05 2001-06-25 株式会社東芝 ランダムアクセスメモリ装置およびそのパイプライン・ページモード制御方法
US5655113A (en) * 1994-07-05 1997-08-05 Monolithic System Technology, Inc. Resynchronization circuit for a memory system and method of operating same
US5559749A (en) * 1995-05-11 1996-09-24 Micron Technology, Inc. Multi-bit block write in a random access memory
DE19536486C2 (de) * 1995-09-29 1997-08-07 Siemens Ag Bewerter- und Verstärkerschaltung
EP0810607B1 (en) * 1996-05-17 2003-08-27 Hyundai Electronics America, Inc. Block write power reduction
JPH1031886A (ja) * 1996-07-17 1998-02-03 Nec Corp ランダムアクセスメモリ
US5896339A (en) * 1996-09-23 1999-04-20 Micron Technology, Inc. Multi-bit block write in a random access memory
US6256249B1 (en) * 1999-12-30 2001-07-03 Cypress Semiconductor Corp. Method for hidden DRAM refresh
JP5279139B2 (ja) * 2006-07-31 2013-09-04 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニー メモリアレイブロック選択のための２本のデータバスを組込んだメモリアレイのための方法および装置
US7499366B2 (en) 2006-07-31 2009-03-03 Sandisk 3D Llc Method for using dual data-dependent busses for coupling read/write circuits to a memory array
US7570523B2 (en) 2006-07-31 2009-08-04 Sandisk 3D Llc Method for using two data busses for memory array block selection
US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7596050B2 (en) * 2006-07-31 2009-09-29 Sandisk 3D Llc Method for using a hierarchical bit line bias bus for block selectable memory array
US7463536B2 (en) * 2006-07-31 2008-12-09 Sandisk 3D Llc Memory array incorporating two data busses for memory array block selection
US7633828B2 (en) * 2006-07-31 2009-12-15 Sandisk 3D Llc Hierarchical bit line bias bus for block selectable memory array
KR20090090330A (ko) * 2006-11-14 2009-08-25 램버스 인코포레이티드 저 에너지 메모리 컴포넌트

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US4222112A (en) * 1979-02-09 1980-09-09 Bell Telephone Laboratories, Incorporated Dynamic RAM organization for reducing peak current
US4494222A (en) * 1980-03-28 1985-01-15 Texas Instruments Incorporated Processor system using on-chip refresh address generator for dynamic memory
JPS5785255A (en) * 1980-11-17 1982-05-27 Nec Corp Memory storage for integrated circuit
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
JPS58155597A (ja) * 1982-03-10 1983-09-16 Hitachi Ltd 半導体メモリの書き込み制御方式
JPH0787034B2 (ja) * 1984-05-07 1995-09-20 株式会社日立製作所 半導体集積回路装置
DE3582376D1 (de) * 1984-08-03 1991-05-08 Toshiba Kawasaki Kk Halbleiterspeicheranordnung.
JPS6168797A (ja) * 1984-09-11 1986-04-09 Nec Corp ダイナミックメモリ回路
JPH0793009B2 (ja) * 1984-12-13 1995-10-09 株式会社東芝 半導体記憶装置
JPH0778993B2 (ja) * 1985-11-05 1995-08-23 株式会社日立製作所 半導体メモリ
JPH0642313B2 (ja) * 1985-12-20 1994-06-01 日本電気株式会社 半導体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040003924A (ko) * 2002-07-04 2004-01-13 조강균 고분자 유기화합물 식물발효를 이용한 야채재배방법과해저저온 발효방법을 이용한 발효김치 제조방법

Also Published As

Publication number Publication date
US4879692A (en) 1989-11-07
DE3884859D1 (de) 1993-11-18
JPH0198193A (ja) 1989-04-17
EP0293933A2 (en) 1988-12-07
EP0293933B1 (en) 1993-10-13
EP0293933A3 (en) 1991-02-06
DE3884859T2 (de) 1994-02-03
KR910009550B1 (ko) 1991-11-21
JPH0793002B2 (ja) 1995-10-09

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