DE3884859D1 - Dynamische Speicherschaltung mit einem Abfühlschema. - Google Patents

Dynamische Speicherschaltung mit einem Abfühlschema.

Info

Publication number
DE3884859D1
DE3884859D1 DE88108948T DE3884859T DE3884859D1 DE 3884859 D1 DE3884859 D1 DE 3884859D1 DE 88108948 T DE88108948 T DE 88108948T DE 3884859 T DE3884859 T DE 3884859T DE 3884859 D1 DE3884859 D1 DE 3884859D1
Authority
DE
Germany
Prior art keywords
memory circuit
dynamic memory
sensing scheme
sensing
scheme
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88108948T
Other languages
English (en)
Other versions
DE3884859T2 (de
Inventor
Kazuo Tokushige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3884859D1 publication Critical patent/DE3884859D1/de
Application granted granted Critical
Publication of DE3884859T2 publication Critical patent/DE3884859T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
DE88108948T 1987-06-04 1988-06-03 Dynamische Speicherschaltung mit einem Abfühlschema. Expired - Fee Related DE3884859T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14081187 1987-06-04

Publications (2)

Publication Number Publication Date
DE3884859D1 true DE3884859D1 (de) 1993-11-18
DE3884859T2 DE3884859T2 (de) 1994-02-03

Family

ID=15277289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88108948T Expired - Fee Related DE3884859T2 (de) 1987-06-04 1988-06-03 Dynamische Speicherschaltung mit einem Abfühlschema.

Country Status (5)

Country Link
US (1) US4879692A (de)
EP (1) EP0293933B1 (de)
JP (1) JPH0793002B2 (de)
KR (1) KR910009550B1 (de)
DE (1) DE3884859T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280448A (en) * 1987-11-18 1994-01-18 Sony Corporation Dynamic memory with group bit lines and associated bit line group selector
JPH0770212B2 (ja) * 1988-07-19 1995-07-31 日本電気株式会社 半導体メモリ回路
JPH07101554B2 (ja) * 1988-11-29 1995-11-01 三菱電機株式会社 半導体記憶装置およびそのデータ転送方法
NL8802973A (nl) * 1988-12-02 1990-07-02 Philips Nv Geintegreerde geheugenschakeling.
US5251177A (en) * 1989-01-23 1993-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device having an improved refresh operation
DE69020384T2 (de) * 1989-02-27 1996-03-21 Nec Corp Integrierte Halbleiterspeicherschaltung mit Möglichkeit zum Maskieren des Schreibens im Speicher.
EP0617363B1 (de) * 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JP2608140B2 (ja) * 1989-05-17 1997-05-07 三菱電機株式会社 半導体ダイナミックｒａｍ
DE69129603T2 (de) * 1990-03-12 1999-02-11 Nec Corp Halbleiterspeicheranordnung mit einem verbesserten Schreibmodus
JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
US5119331A (en) * 1990-09-04 1992-06-02 Nec Electronics Inc. Segmented flash write
DE59103725D1 (de) * 1990-09-20 1995-01-12 Siemens Ag Dynamischer halbleiterspeicher mit lokalen und hinsichtlich ihrer ansteuerfunktion optimierten leseverstärker-treiberschaltungen.
JPH04268287A (ja) * 1991-02-22 1992-09-24 Nec Ic Microcomput Syst Ltd 半導体メモリ回路
JPH04278288A (ja) * 1991-03-07 1992-10-02 Toshiba Corp 半導体記憶装置　
JPH04298883A (ja) * 1991-03-26 1992-10-22 Nec Ic Microcomput Syst Ltd 半導体記憶回路
JP3178859B2 (ja) * 1991-06-05 2001-06-25 株式会社東芝 ランダムアクセスメモリ装置およびそのパイプライン・ページモード制御方法
US5655113A (en) * 1994-07-05 1997-08-05 Monolithic System Technology, Inc. Resynchronization circuit for a memory system and method of operating same
US5559749A (en) * 1995-05-11 1996-09-24 Micron Technology, Inc. Multi-bit block write in a random access memory
DE19536486C2 (de) * 1995-09-29 1997-08-07 Siemens Ag Bewerter- und Verstärkerschaltung
DE69724327T2 (de) * 1996-05-17 2004-06-17 Hyundai Electronics America Inc., San Jose Leistungsreduzierung während eines Blockschreibens
JPH1031886A (ja) * 1996-07-17 1998-02-03 Nec Corp ランダムアクセスメモリ
US5896339A (en) * 1996-09-23 1999-04-20 Micron Technology, Inc. Multi-bit block write in a random access memory
US6256249B1 (en) * 1999-12-30 2001-07-03 Cypress Semiconductor Corp. Method for hidden DRAM refresh
KR20040003924A (ko) * 2002-07-04 2004-01-13 조강균 고분자 유기화합물 식물발효를 이용한 야채재배방법과해저저온 발효방법을 이용한 발효김치 제조방법
US7596050B2 (en) * 2006-07-31 2009-09-29 Sandisk 3D Llc Method for using a hierarchical bit line bias bus for block selectable memory array
US7570523B2 (en) 2006-07-31 2009-08-04 Sandisk 3D Llc Method for using two data busses for memory array block selection
US7463536B2 (en) * 2006-07-31 2008-12-09 Sandisk 3D Llc Memory array incorporating two data busses for memory array block selection
US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
JP5279139B2 (ja) * 2006-07-31 2013-09-04 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニー メモリアレイブロック選択のための２本のデータバスを組込んだメモリアレイのための方法および装置
US7633828B2 (en) * 2006-07-31 2009-12-15 Sandisk 3D Llc Hierarchical bit line bias bus for block selectable memory array
US7499366B2 (en) 2006-07-31 2009-03-03 Sandisk 3D Llc Method for using dual data-dependent busses for coupling read/write circuits to a memory array
JP2010509704A (ja) 2006-11-14 2010-03-25 ラムバス・インコーポレーテッド 低エネルギーメモリコンポーネント

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222112A (en) * 1979-02-09 1980-09-09 Bell Telephone Laboratories, Incorporated Dynamic RAM organization for reducing peak current
US4494222A (en) * 1980-03-28 1985-01-15 Texas Instruments Incorporated Processor system using on-chip refresh address generator for dynamic memory
JPS5785255A (en) * 1980-11-17 1982-05-27 Nec Corp Memory storage for integrated circuit
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
JPS58155597A (ja) * 1982-03-10 1983-09-16 Hitachi Ltd 半導体メモリの書き込み制御方式
JPH0787034B2 (ja) * 1984-05-07 1995-09-20 株式会社日立製作所 半導体集積回路装置
DE3582376D1 (de) * 1984-08-03 1991-05-08 Toshiba Kawasaki Kk Halbleiterspeicheranordnung.
JPS6168797A (ja) * 1984-09-11 1986-04-09 Nec Corp ダイナミックメモリ回路
JPH0793009B2 (ja) * 1984-12-13 1995-10-09 株式会社東芝 半導体記憶装置
JPH0778993B2 (ja) * 1985-11-05 1995-08-23 株式会社日立製作所 半導体メモリ
JPH0642313B2 (ja) * 1985-12-20 1994-06-01 日本電気株式会社 半導体メモリ

Also Published As

Publication number Publication date
EP0293933A2 (de) 1988-12-07
JPH0793002B2 (ja) 1995-10-09
EP0293933A3 (de) 1991-02-06
US4879692A (en) 1989-11-07
JPH0198193A (ja) 1989-04-17
DE3884859T2 (de) 1994-02-03
EP0293933B1 (de) 1993-10-13
KR890001090A (ko) 1989-03-18
KR910009550B1 (ko) 1991-11-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee