DE69014189T2 - Speicher mit verbesserter Lesezeit. - Google Patents

Speicher mit verbesserter Lesezeit.

Info

Publication number
DE69014189T2
DE69014189T2 DE69014189T DE69014189T DE69014189T2 DE 69014189 T2 DE69014189 T2 DE 69014189T2 DE 69014189 T DE69014189 T DE 69014189T DE 69014189 T DE69014189 T DE 69014189T DE 69014189 T2 DE69014189 T2 DE 69014189T2
Authority
DE
Germany
Prior art keywords
memory
read time
improved read
improved
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014189T
Other languages
English (en)
Other versions
DE69014189D1 (de
Inventor
Franck Edme
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69014189D1 publication Critical patent/DE69014189D1/de
Application granted granted Critical
Publication of DE69014189T2 publication Critical patent/DE69014189T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
DE69014189T 1989-10-02 1990-09-25 Speicher mit verbesserter Lesezeit. Expired - Fee Related DE69014189T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8912845A FR2652672B1 (fr) 1989-10-02 1989-10-02 Memoire a temps de lecture ameliore.

Publications (2)

Publication Number Publication Date
DE69014189D1 DE69014189D1 (de) 1994-12-22
DE69014189T2 true DE69014189T2 (de) 1995-04-06

Family

ID=9386000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014189T Expired - Fee Related DE69014189T2 (de) 1989-10-02 1990-09-25 Speicher mit verbesserter Lesezeit.

Country Status (4)

Country Link
US (1) US5177707A (de)
EP (1) EP0421839B1 (de)
DE (1) DE69014189T2 (de)
FR (1) FR2652672B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10031947A1 (de) * 2000-06-30 2002-01-24 Infineon Technologies Ag Schaltungsanordnung zum Ausgleich unterschiedlicher Spannungen auf Leitungszügen in integrierten Halbleiterschaltungen

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69000803T2 (de) * 1989-10-20 1993-06-09 Sgs Thomson Microelectronics Stromquelle mit niedrigem temperaturkoeffizient.
DE69124849T2 (de) * 1990-06-29 1997-06-12 Texas Instruments Inc Elektrisch löschbare, elektrisch programmierbare Festwertspeicherzelle mit wählbarer Schwellspannung und Verfahren zu ihrer Verwendung
FR2714202B1 (fr) * 1993-12-22 1996-01-12 Sgs Thomson Microelectronics Mémoire en circuit intégré à temps de lecture amélioré.
GB9423033D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage reference circuit
US5798967A (en) * 1997-02-22 1998-08-25 Programmable Microelectronics Corporation Sensing scheme for non-volatile memories
US5835410A (en) * 1997-06-09 1998-11-10 Microchip Technology Incorporated Self timed precharge sense amplifier for a memory array
JP3804765B2 (ja) * 2001-06-27 2006-08-02 シャープ株式会社 充電回路およびそれを用いた半導体記憶装置
JP2003016785A (ja) * 2001-06-28 2003-01-17 Sharp Corp 半導体記憶装置およびそれを用いた情報機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
JPS56114193A (en) * 1980-02-09 1981-09-08 Fujitsu Ltd Semiconductor memory device
JPS5764398A (en) * 1980-10-03 1982-04-19 Olympus Optical Co Ltd Memory device
US4783764A (en) * 1984-11-26 1988-11-08 Hitachi, Ltd. Semiconductor integrated circuit device with built-in memories, and peripheral circuit which may be statically or dynamically operated
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4879682A (en) * 1988-09-15 1989-11-07 Motorola, Inc. Sense amplifier precharge control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10031947A1 (de) * 2000-06-30 2002-01-24 Infineon Technologies Ag Schaltungsanordnung zum Ausgleich unterschiedlicher Spannungen auf Leitungszügen in integrierten Halbleiterschaltungen
DE10031947B4 (de) * 2000-06-30 2006-06-14 Infineon Technologies Ag Schaltungsanordnung zum Ausgleich unterschiedlicher Spannungen auf Leitungszügen in integrierten Halbleiterschaltungen

Also Published As

Publication number Publication date
DE69014189D1 (de) 1994-12-22
EP0421839A1 (de) 1991-04-10
US5177707A (en) 1993-01-05
FR2652672A1 (fr) 1991-04-05
FR2652672B1 (fr) 1991-12-20
EP0421839B1 (de) 1994-11-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee