DE3778065D1 - Magnetischer speicher. - Google Patents

Magnetischer speicher.

Info

Publication number
DE3778065D1
DE3778065D1 DE8787107788T DE3778065T DE3778065D1 DE 3778065 D1 DE3778065 D1 DE 3778065D1 DE 8787107788 T DE8787107788 T DE 8787107788T DE 3778065 T DE3778065 T DE 3778065T DE 3778065 D1 DE3778065 D1 DE 3778065D1
Authority
DE
Germany
Prior art keywords
magnetic memory
magnetic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787107788T
Other languages
English (en)
Inventor
James M Daughton
Arthur V Pohm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE3778065D1 publication Critical patent/DE3778065D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE8787107788T 1986-06-03 1987-05-29 Magnetischer speicher. Expired - Lifetime DE3778065D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/870,068 US4780848A (en) 1986-06-03 1986-06-03 Magnetoresistive memory with multi-layer storage cells having layers of limited thickness

Publications (1)

Publication Number Publication Date
DE3778065D1 true DE3778065D1 (de) 1992-05-14

Family

ID=25354735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787107788T Expired - Lifetime DE3778065D1 (de) 1986-06-03 1987-05-29 Magnetischer speicher.

Country Status (5)

Country Link
US (1) US4780848A (de)
EP (1) EP0248355B1 (de)
JP (1) JPS6342089A (de)
CA (1) CA1284382C (de)
DE (1) DE3778065D1 (de)

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US4945397A (en) * 1986-12-08 1990-07-31 Honeywell Inc. Resistive overlayer for magnetic films
US4897288A (en) * 1987-01-28 1990-01-30 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system
EP0356093B1 (de) * 1988-08-12 1993-03-31 Nissin Shokuhin Kabushiki Kaisha Sich selbst erwärmender Behälter
AU641635B2 (en) * 1989-02-22 1993-09-30 Nissin Shokuhin Kabushiki Kaisha Ignition system and self-heating container
US5039655A (en) * 1989-07-28 1991-08-13 Ampex Corporation Thin film memory device having superconductor keeper for eliminating magnetic domain creep
US5012444A (en) * 1990-04-04 1991-04-30 Honeywell Inc. Opposed field magnetoresistive memory sensing
US5060193A (en) * 1990-04-04 1991-10-22 Honeywell Inc. Magnetic state entry assurance
US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
CA2060835A1 (en) * 1991-02-11 1992-08-12 Romney R. Katti Integrated, non-volatile, high-speed analog random access memory
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
US5247278A (en) * 1991-11-26 1993-09-21 Honeywell Inc. Magnetic field sensing device
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5515314A (en) * 1994-05-27 1996-05-07 Fujitsu Limited Storage device
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US7050329B2 (en) * 1995-04-21 2006-05-23 Johnson Mark B Magnetic spin based memory with inductive write lines
US5702831A (en) * 1995-11-06 1997-12-30 Motorola Ferromagnetic GMR material
US5659499A (en) * 1995-11-24 1997-08-19 Motorola Magnetic memory and method therefor
US5569617A (en) * 1995-12-21 1996-10-29 Honeywell Inc. Method of making integrated spacer for magnetoresistive RAM
US5756366A (en) * 1995-12-21 1998-05-26 Honeywell Inc. Magnetic hardening of bit edges of magnetoresistive RAM
US5745408A (en) * 1996-09-09 1998-04-28 Motorola, Inc. Multi-layer magnetic memory cell with low switching current
US6048739A (en) * 1997-12-18 2000-04-11 Honeywell Inc. Method of manufacturing a high density magnetic memory device
US5956267A (en) * 1997-12-18 1999-09-21 Honeywell Inc Self-aligned wordline keeper and method of manufacture therefor
GB2343308B (en) * 1998-10-30 2000-10-11 Nikolai Franz Gregor Schwabe Magnetic storage device
US20040017721A1 (en) * 1998-10-30 2004-01-29 Schwabe Nikolai Franz Gregoe Magnetic storage device
US6872993B1 (en) 1999-05-25 2005-03-29 Micron Technology, Inc. Thin film memory device having local and external magnetic shielding
AU6121100A (en) * 1999-06-18 2001-01-09 Nve Corporation Magnetic memory coincident thermal pulse data storage
US6317359B1 (en) 1999-07-07 2001-11-13 Iowa State University Research Foundation, Inc. Non-volatile magnetic circuit
US6343032B1 (en) 1999-07-07 2002-01-29 Iowa State University Research Foundation, Inc. Non-volatile spin dependent tunnel junction circuit
US6542000B1 (en) 1999-07-30 2003-04-01 Iowa State University Research Foundation, Inc. Nonvolatile programmable logic devices
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6285581B1 (en) * 1999-12-13 2001-09-04 Motorola, Inc. MRAM having semiconductor device integrated therein
US6392922B1 (en) 2000-08-14 2002-05-21 Micron Technology, Inc. Passivated magneto-resistive bit structure and passivation method therefor
US6413788B1 (en) 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
JP2002298588A (ja) * 2001-03-30 2002-10-11 Fujitsu Ltd 半導体装置及びその検査方法
US6744086B2 (en) * 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
DE10128964B4 (de) * 2001-06-15 2012-02-09 Qimonda Ag Digitale magnetische Speicherzelleneinrichtung
US6693826B1 (en) 2001-07-30 2004-02-17 Iowa State University Research Foundation, Inc. Magnetic memory sensing method and apparatus
US6500676B1 (en) 2001-08-20 2002-12-31 Honeywell International Inc. Methods and apparatus for depositing magnetic films
US6510080B1 (en) 2001-08-28 2003-01-21 Micron Technology Inc. Three terminal magnetic random access memory
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6717194B2 (en) 2001-10-30 2004-04-06 Micron Technology, Inc. Magneto-resistive bit structure and method of manufacture therefor
US6829157B2 (en) * 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
AU2003225048A1 (en) * 2002-04-19 2003-11-03 Integrated Magnetoelectronics Corporation Interfaces between semiconductor circuitry and transpinnor-based circuitry
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
US6744663B2 (en) * 2002-06-28 2004-06-01 Motorola, Inc. Circuit and method for reading a toggle memory cell
US6806523B2 (en) * 2002-07-15 2004-10-19 Micron Technology, Inc. Magnetoresistive memory devices
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6914805B2 (en) * 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
KR100515053B1 (ko) * 2002-10-02 2005-09-14 삼성전자주식회사 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치
US7023723B2 (en) * 2002-11-12 2006-04-04 Nve Corporation Magnetic memory layers thermal pulse transitions
US6992919B2 (en) * 2002-12-20 2006-01-31 Integrated Magnetoelectronics Corporation All-metal three-dimensional circuits and memories
US6765823B1 (en) * 2003-01-29 2004-07-20 Micron Technology Incorporated Magnetic memory cell with shape anisotropy
US7002228B2 (en) * 2003-02-18 2006-02-21 Micron Technology, Inc. Diffusion barrier for improving the thermal stability of MRAM devices
US7005852B2 (en) 2003-04-04 2006-02-28 Integrated Magnetoelectronics Corporation Displays with all-metal electronics
EP1639656B1 (de) * 2003-06-23 2019-06-12 NVE Corporation Thermisch betriebene ferromagnetische speicherzelle
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7078239B2 (en) 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
US7112454B2 (en) * 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
US20050106359A1 (en) * 2003-11-13 2005-05-19 Honeywell International Inc. Method of processing substrate
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7148531B2 (en) * 2004-04-29 2006-12-12 Nve Corporation Magnetoresistive memory SOI cell
US7230844B2 (en) * 2004-10-12 2007-06-12 Nve Corporation Thermomagnetically assisted spin-momentum-transfer switching memory
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7911830B2 (en) * 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
NL258618A (de) * 1960-12-01
BE620452A (de) * 1961-07-20
NL6401805A (de) * 1964-02-26 1965-08-27
FR1456686A (fr) * 1964-08-10 1966-07-08 Toko Inc Mémoire magnétique perfectionnée par absorption des déformations des fils magnétiques minces supprimant les distorsions magnétiques
GB1059310A (en) * 1965-04-27 1967-02-15 Mullard Ltd Improvements in or relating to depositing conductive magnetic material on to a non-conductive substrate
US3423739A (en) * 1965-08-16 1969-01-21 Sperry Rand Corp Nondestructive read memory selection system
US3493943A (en) * 1965-10-05 1970-02-03 Massachusetts Inst Technology Magnetoresistive associative memory
DE1922552A1 (de) * 1969-05-02 1970-11-19 Siemens Ag Magnetschichtspeicherzelle mit geschlossenem magnetischen Kreis in Richtung leichter Magnetisierbarkeit der Speicherschichten und Verfahren zur Herstellung
US3883858A (en) * 1973-12-17 1975-05-13 Ampex Magnetoresistive readout transducer for sensing magnetic domains in thin film memories
FR2276658A1 (fr) * 1974-06-25 1976-01-23 Tecsi Poste de lecture pour un registre a propagation de domaines magnetiques sur une couche mince
US4208725A (en) * 1979-02-23 1980-06-17 Sperry Corporation Magneto-resistive detector for cross-tie wall memory system
US4356523A (en) * 1980-06-09 1982-10-26 Ampex Corporation Narrow track magnetoresistive transducer assembly
JPS5999370A (ja) * 1982-11-30 1984-06-08 Copal Co Ltd 磁気抵抗素子を具える磁気検出器の製造方法
US4455626A (en) * 1983-03-21 1984-06-19 Honeywell Inc. Thin film memory with magnetoresistive read-out
US4639806A (en) * 1983-09-09 1987-01-27 Sharp Kabushiki Kaisha Thin film magnetic head having a magnetized ferromagnetic film on the MR element

Also Published As

Publication number Publication date
EP0248355B1 (de) 1992-04-08
EP0248355A3 (en) 1990-03-28
CA1284382C (en) 1991-05-21
US4780848A (en) 1988-10-25
EP0248355A2 (de) 1987-12-09
JPS6342089A (ja) 1988-02-23
JPH0444352B2 (de) 1992-07-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee
8370 Indication related to discontinuation of the patent is to be deleted
8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC., BOISE, ID., US