DE3581596D1 - Festwertspeicherschaltung. - Google Patents

Festwertspeicherschaltung.

Info

Publication number
DE3581596D1
DE3581596D1 DE8585402244T DE3581596T DE3581596D1 DE 3581596 D1 DE3581596 D1 DE 3581596D1 DE 8585402244 T DE8585402244 T DE 8585402244T DE 3581596 T DE3581596 T DE 3581596T DE 3581596 D1 DE3581596 D1 DE 3581596D1
Authority
DE
Germany
Prior art keywords
memory circuit
fixed memory
fixed
circuit
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585402244T
Other languages
English (en)
Inventor
Hideyuki Wakimoto
Masanobu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3581596D1 publication Critical patent/DE3581596D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE8585402244T 1984-11-20 1985-11-20 Festwertspeicherschaltung. Expired - Fee Related DE3581596D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59243326A JPS61123169A (ja) 1984-11-20 1984-11-20 半導体集積回路

Publications (1)

Publication Number Publication Date
DE3581596D1 true DE3581596D1 (de) 1991-03-07

Family

ID=17102162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585402244T Expired - Fee Related DE3581596D1 (de) 1984-11-20 1985-11-20 Festwertspeicherschaltung.

Country Status (5)

Country Link
US (1) US4725980A (de)
EP (1) EP0182717B1 (de)
JP (1) JPS61123169A (de)
KR (1) KR900000586B1 (de)
DE (1) DE3581596D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
US4870304A (en) * 1987-12-08 1989-09-26 Cypress Semiconductor Corporation Fast EPROM programmable logic array cell
DE68928112T2 (de) * 1988-03-18 1997-11-20 Toshiba Kawasaki Kk Masken-rom mit Ersatzspeicherzellen
JPH0249463A (ja) * 1988-05-27 1990-02-19 Matsushita Electron Corp 半導体装置
JPH07120726B2 (ja) * 1990-05-30 1995-12-20 株式会社東芝 不揮発性半導体メモリ
US5132933A (en) * 1990-12-21 1992-07-21 Schreck John F Bias circuitry for nonvolatile memory array
JP2829156B2 (ja) * 1991-07-25 1998-11-25 株式会社東芝 不揮発性半導体記憶装置の冗長回路
FR2697673B1 (fr) * 1992-10-29 1994-12-16 Gemplus Card Int Circuit à fusible, pour circuit intégré.
WO1996015553A1 (en) * 1994-11-15 1996-05-23 Advanced Micro Devices, Inc. Transistor structure with specific gate and pad areas
US6031771A (en) * 1996-10-28 2000-02-29 Macronix International Co., Ltd. Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
JPH11189883A (ja) * 1997-10-20 1999-07-13 Alps Electric Co Ltd 修復された金属パターンを有する基板および基板上の金属パターン修復方法と修復装置
US5896327A (en) * 1997-10-27 1999-04-20 Macronix International Co., Ltd. Memory redundancy circuit for high density memory with extra row and column for failed address storage
US5889711A (en) * 1997-10-27 1999-03-30 Macronix International Co., Ltd. Memory redundancy for high density memory
US6049495A (en) * 1999-02-03 2000-04-11 International Business Machines Corporation Auto-programmable current limiter to control current leakage due to bitline to wordline short
US8058469B2 (en) * 2008-11-03 2011-11-15 Sabic Innovative Plastics Ip B.V. Method for making carbamates, ureas and isocyanates

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4305083A (en) * 1978-09-19 1981-12-08 Texas Instruments Incorporated Single junction charge injector floating gate memory cell
US4245165A (en) * 1978-11-29 1981-01-13 International Business Machines Corporation Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
US4375087C1 (en) * 1980-04-09 2002-01-01 Hughes Aircraft Co Electrically erasable programmable read-only memory
US4348745A (en) * 1980-10-27 1982-09-07 Hughes Aircraft Company Non-volatile random access memory having non-inverted storage
US4573144A (en) * 1982-09-30 1986-02-25 Motorola, Inc. Common floating gate programmable link
US4532611A (en) * 1982-11-01 1985-07-30 Motorola, Inc. Redundant memory circuit
JPS59103366A (ja) * 1982-12-03 1984-06-14 Fujitsu Ltd 半導体メモリ素子の製造方法
US4583201A (en) * 1983-09-08 1986-04-15 International Business Machines Corporation Resistor personalized memory device using a resistive gate fet

Also Published As

Publication number Publication date
EP0182717A2 (de) 1986-05-28
US4725980A (en) 1988-02-16
KR900000586B1 (ko) 1990-01-31
KR860004462A (ko) 1986-06-23
EP0182717A3 (en) 1988-04-27
JPS61123169A (ja) 1986-06-11
EP0182717B1 (de) 1991-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee