FR2513810B1 - Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif - Google Patents
Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositifInfo
- Publication number
- FR2513810B1 FR2513810B1 FR8213878A FR8213878A FR2513810B1 FR 2513810 B1 FR2513810 B1 FR 2513810B1 FR 8213878 A FR8213878 A FR 8213878A FR 8213878 A FR8213878 A FR 8213878A FR 2513810 B1 FR2513810 B1 FR 2513810B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56150607A JPS5852870A (ja) | 1981-09-25 | 1981-09-25 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2513810A1 FR2513810A1 (fr) | 1983-04-01 |
FR2513810B1 true FR2513810B1 (fr) | 1986-06-27 |
Family
ID=15500577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8213878A Expired FR2513810B1 (fr) | 1981-09-25 | 1982-08-09 | Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5852870A (fr) |
DE (1) | DE3235412A1 (fr) |
FR (1) | FR2513810B1 (fr) |
GB (1) | GB2106320B (fr) |
HK (1) | HK45986A (fr) |
IT (1) | IT1153732B (fr) |
MY (1) | MY8600559A (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616079A (ja) * | 1984-06-19 | 1986-01-11 | Fukuyama Gomme Kogyo Kk | 弾性体クロ−ラ |
JPS6267851A (ja) * | 1985-09-20 | 1987-03-27 | Hitachi Ltd | 半導体集積回路装置 |
JPH0715830Y2 (ja) * | 1989-01-13 | 1995-04-12 | オーツタイヤ株式会社 | クローラ用弾性履帯 |
JPH0562396U (ja) * | 1992-05-18 | 1993-08-20 | 福山ゴム工業株式会社 | ゴムクローラ |
JP2008205418A (ja) * | 2007-02-19 | 2008-09-04 | Mikio Shimoyama | いつでもスイッチ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2506916A1 (de) * | 1974-02-19 | 1976-02-05 | Texas Instruments Inc | Digitale schaltungsanordnung |
DE2624584A1 (de) * | 1976-06-01 | 1977-12-15 | Siemens Ag | Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen |
NL7614610A (nl) * | 1976-12-31 | 1978-07-04 | Philips Nv | Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor. |
NL7700420A (nl) * | 1977-01-17 | 1978-07-19 | Philips Nv | Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan. |
DE2722667C2 (de) * | 1977-05-18 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ |
FR2404962A1 (fr) * | 1977-09-28 | 1979-04-27 | Ibm France | Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur |
DE2837519A1 (de) * | 1978-08-28 | 1980-03-20 | Philips Patentverwaltung | Monolithische integrierte halbleiter- schaltungsanordnung |
JPS55127060A (en) * | 1979-03-24 | 1980-10-01 | Mitsubishi Electric Corp | Iil integrated circuit |
JPS55134962A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device |
JPS5635460A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Logic circuit using integrated injection type logic element |
-
1981
- 1981-09-25 JP JP56150607A patent/JPS5852870A/ja active Granted
-
1982
- 1982-08-09 FR FR8213878A patent/FR2513810B1/fr not_active Expired
- 1982-09-20 IT IT23345/82A patent/IT1153732B/it active
- 1982-09-24 GB GB08227356A patent/GB2106320B/en not_active Expired
- 1982-09-24 DE DE19823235412 patent/DE3235412A1/de not_active Withdrawn
-
1986
- 1986-06-19 HK HK459/86A patent/HK45986A/xx unknown
- 1986-12-30 MY MY559/86A patent/MY8600559A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
HK45986A (en) | 1986-06-27 |
DE3235412A1 (de) | 1983-05-26 |
IT8223345A0 (it) | 1982-09-20 |
GB2106320B (en) | 1985-07-10 |
MY8600559A (en) | 1986-12-31 |
JPH0412032B2 (fr) | 1992-03-03 |
JPS5852870A (ja) | 1983-03-29 |
IT1153732B (it) | 1987-01-14 |
GB2106320A (en) | 1983-04-07 |
FR2513810A1 (fr) | 1983-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |