DE3582457D1 - Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung. - Google Patents

Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung.

Info

Publication number
DE3582457D1
DE3582457D1 DE8585109313T DE3582457T DE3582457D1 DE 3582457 D1 DE3582457 D1 DE 3582457D1 DE 8585109313 T DE8585109313 T DE 8585109313T DE 3582457 T DE3582457 T DE 3582457T DE 3582457 D1 DE3582457 D1 DE 3582457D1
Authority
DE
Germany
Prior art keywords
input
semiconductor device
protection circuit
output protection
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE8585109313T
Other languages
English (en)
Inventor
Hiroshi Ishioka
Tohru Tsujide
Makoto Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3582457D1 publication Critical patent/DE3582457D1/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
DE8585109313T 1984-07-24 1985-07-24 Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung. Revoked DE3582457D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15364984A JPS6132464A (ja) 1984-07-24 1984-07-24 Ｃｍｏｓ型集積回路装置

Publications (1)

Publication Number Publication Date
DE3582457D1 true DE3582457D1 (de) 1991-05-16

Family

ID=15567151

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585109313T Revoked DE3582457D1 (de) 1984-07-24 1985-07-24 Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung.

Country Status (4)

Country Link
US (1) US4733285A (de)
EP (1) EP0169559B1 (de)
JP (1) JPS6132464A (de)
DE (1) DE3582457D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
JPS6271275A (ja) * 1985-09-25 1987-04-01 Toshiba Corp 半導体集積回路
JPS6336554A (ja) * 1986-07-31 1988-02-17 Nec Corp 半導体装置
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
EP0283046B1 (de) * 1987-03-18 1996-06-12 Nec Corporation Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
JP2712079B2 (ja) * 1988-02-15 1998-02-10 株式会社東芝 半導体装置
US5182621A (en) * 1988-06-14 1993-01-26 Nec Corporation Input protection circuit for analog/digital converting semiconductor
JPH02119262A (ja) * 1988-10-28 1990-05-07 Toshiba Corp 半導体装置
US5121179A (en) * 1990-10-08 1992-06-09 Seiko Epson Corporation Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits
JP2838836B2 (ja) * 1990-04-26 1998-12-16 富士通株式会社 半導体集積回路及び半導体集積回路装置
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
EP0517391A1 (de) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD-Schutzschaltung
US5401997A (en) * 1992-01-22 1995-03-28 Integrated Device Technology, Inc. ESD protection for poly resistor on oxide
US5218222A (en) * 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
US5652689A (en) * 1994-08-29 1997-07-29 United Microelectronics Corporation ESD protection circuit located under protected bonding pad
JP2786152B2 (ja) * 1996-04-25 1998-08-13 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS468254B1 (de) * 1967-11-13 1971-03-02
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
JPS5751738B2 (de) * 1973-12-27 1982-11-04
JPS5540506B2 (de) * 1975-01-10 1980-10-18
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
US4476476A (en) * 1979-04-05 1984-10-09 National Semiconductor Corporation CMOS Input and output protection circuit
JPS577976A (en) * 1980-06-17 1982-01-16 Matsushita Electric Ind Co Ltd Photo electromotive force element
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS57104249A (en) * 1980-12-19 1982-06-29 Matsushita Electric Ind Co Ltd Complementary type metal oxide semiconductor
JPS57147280A (en) * 1981-03-05 1982-09-11 Mitsubishi Electric Corp Insulated gate field effect transistor
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS5944786B2 (ja) * 1981-07-06 1984-11-01 日本電信電話株式会社 相補型ｍｉｓ回路装置
DE3276981D1 (en) * 1981-10-09 1987-09-17 Toshiba Kk Semiconductor device having a fuse element
JPS595671A (ja) * 1982-07-02 1984-01-12 Toshiba Corp 半導体装置およびその製造方法
JPS5956757A (ja) * 1982-09-25 1984-04-02 Toshiba Corp 半導体装置
JPS60767A (ja) * 1983-06-17 1985-01-05 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
EP0169559A3 (en) 1987-05-20
EP0169559A2 (de) 1986-01-29
JPS6132464A (ja) 1986-02-15
US4733285A (en) 1988-03-22
EP0169559B1 (de) 1991-04-10

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation