DE3784793D1 - Integrierte schaltung mit verbesserter schutzvorrichtung. - Google Patents

Integrierte schaltung mit verbesserter schutzvorrichtung.

Info

Publication number
DE3784793D1
DE3784793D1 DE8787107503T DE3784793T DE3784793D1 DE 3784793 D1 DE3784793 D1 DE 3784793D1 DE 8787107503 T DE8787107503 T DE 8787107503T DE 3784793 T DE3784793 T DE 3784793T DE 3784793 D1 DE3784793 D1 DE 3784793D1
Authority
DE
Germany
Prior art keywords
integrated circuit
protective device
improved protective
improved
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787107503T
Other languages
English (en)
Other versions
DE3784793T2 (de
Inventor
Kazuhiro Misu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3784793D1 publication Critical patent/DE3784793D1/de
Publication of DE3784793T2 publication Critical patent/DE3784793T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
DE8787107503T 1986-05-22 1987-05-22 Integrierte schaltung mit verbesserter schutzvorrichtung. Expired - Fee Related DE3784793T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61118760A JPH065749B2 (ja) 1986-05-22 1986-05-22 半導体装置

Publications (2)

Publication Number Publication Date
DE3784793D1 true DE3784793D1 (de) 1993-04-22
DE3784793T2 DE3784793T2 (de) 1993-07-08

Family

ID=14744380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787107503T Expired - Fee Related DE3784793T2 (de) 1986-05-22 1987-05-22 Integrierte schaltung mit verbesserter schutzvorrichtung.

Country Status (4)

Country Link
US (1) US4819046A (de)
EP (1) EP0253105B1 (de)
JP (1) JPH065749B2 (de)
DE (1) DE3784793T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2626229B2 (ja) * 1989-10-12 1997-07-02 日本電気株式会社 半導体入力保護装置
US5066999A (en) * 1989-10-23 1991-11-19 Micron Technology, Inc. Resistor under wirebond pad
US5121179A (en) * 1990-10-08 1992-06-09 Seiko Epson Corporation Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits
JPH03259561A (ja) * 1990-03-09 1991-11-19 Fujitsu Ltd 半導体装置
US5189638A (en) * 1990-04-26 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Portable semiconductor memory device
JPH04332163A (ja) * 1991-05-02 1992-11-19 Sony Corp 半導体メモリ
US6002155A (en) * 1993-02-12 1999-12-14 Fujitsu Limited Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor
US5754380A (en) * 1995-04-06 1998-05-19 Industrial Technology Research Institute CMOS output buffer with enhanced high ESD protection capability
WO1996031907A1 (en) * 1995-04-06 1996-10-10 Industrial Technology Research Institute N-sided polygonal cell lay-out for multiple cell transistor
US5572394A (en) * 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
TW308733B (de) * 1995-07-20 1997-06-21 Siemens Ag
US5929491A (en) * 1995-07-20 1999-07-27 Siemens Aktiengesellschaft Integrated circuit with ESD protection
US6414341B1 (en) * 1998-09-25 2002-07-02 Nec Corporation Input/output protective device
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562663A (en) * 1979-06-20 1981-01-12 Mitsubishi Electric Corp Input output protective device for semiconductor ic
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS59107555A (ja) * 1982-12-03 1984-06-21 Fujitsu Ltd 半導体装置
JPS59224164A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd 半導体集積回路装置
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
JPH0691196B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
US4656732A (en) * 1984-09-26 1987-04-14 Texas Instruments Incorporated Integrated circuit fabrication process

Also Published As

Publication number Publication date
EP0253105B1 (de) 1993-03-17
JPH065749B2 (ja) 1994-01-19
DE3784793T2 (de) 1993-07-08
EP0253105A1 (de) 1988-01-20
US4819046A (en) 1989-04-04
JPS62274664A (ja) 1987-11-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee