DE69020787D1 - Integrierte Halbleiterschaltung mit verbesserter Eingangs-/Ausgangsstruktur. - Google Patents

Integrierte Halbleiterschaltung mit verbesserter Eingangs-/Ausgangsstruktur.

Info

Publication number
DE69020787D1
DE69020787D1 DE69020787T DE69020787T DE69020787D1 DE 69020787 D1 DE69020787 D1 DE 69020787D1 DE 69020787 T DE69020787 T DE 69020787T DE 69020787 T DE69020787 T DE 69020787T DE 69020787 D1 DE69020787 D1 DE 69020787D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
output structure
improved input
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69020787T
Other languages
English (en)
Other versions
DE69020787T2 (de
Inventor
Hiroyuki Hara
Yasuhiro Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69020787D1 publication Critical patent/DE69020787D1/de
Publication of DE69020787T2 publication Critical patent/DE69020787T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
DE69020787T 1989-04-26 1990-04-26 Integrierte Halbleiterschaltung mit verbesserter Eingangs-/Ausgangsstruktur. Expired - Fee Related DE69020787T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1106529A JP2549729B2 (ja) 1989-04-26 1989-04-26 半導体集積回路

Publications (2)

Publication Number Publication Date
DE69020787D1 true DE69020787D1 (de) 1995-08-17
DE69020787T2 DE69020787T2 (de) 1995-12-21

Family

ID=14435920

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020787T Expired - Fee Related DE69020787T2 (de) 1989-04-26 1990-04-26 Integrierte Halbleiterschaltung mit verbesserter Eingangs-/Ausgangsstruktur.

Country Status (5)

Country Link
US (1) US5101125A (de)
EP (1) EP0395071B1 (de)
JP (1) JP2549729B2 (de)
KR (1) KR930007127B1 (de)
DE (1) DE69020787T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254887A (en) * 1991-06-27 1993-10-19 Nec Corporation ECL to BiCMIS level converter
US5408147A (en) * 1993-09-07 1995-04-18 National Semiconductor Corporation VCC translator circuit
JP2827854B2 (ja) * 1993-11-02 1998-11-25 日本電気株式会社 半導体集積回路
IT1266731B1 (it) * 1994-06-28 1997-01-14 Olivetti Canon Ind Spa Inchiostro per stampa a getto d'inchiostro.

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437171A (en) * 1982-01-07 1984-03-13 Intel Corporation ECL Compatible CMOS memory
JPS6091702A (ja) * 1983-10-26 1985-05-23 Hitachi Ltd 定電圧回路
US4620115A (en) * 1984-09-07 1986-10-28 Advanced Micro Devices, Inc. Voltage-temperature compensated threshold for hysteresis line receiver at TTL supply voltage
JPS62230222A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 入力回路
JPS62230223A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 出力回路
US4841175A (en) * 1987-01-23 1989-06-20 Siemens Aktiengesellschaft ECL-compatible input/output circuits in CMOS technology
US4785205A (en) * 1987-06-29 1988-11-15 Ncr Corporation High speed ECL to CMOS converter
US4912347A (en) * 1987-08-25 1990-03-27 American Telephone And Telegraph Company, At&T Bell Laboratories CMOS to ECL output buffer
US4794317A (en) * 1987-12-18 1988-12-27 Texas Instruments Incorporated ECL-to-CMOS level conversion for use in ECL-BiCMOS circuit
US4806799A (en) * 1988-02-26 1989-02-21 Motorola, Inc. ECL to CMOS translator
US4891535A (en) * 1988-12-20 1990-01-02 Tektronix, Inc. Single supply ECL to CMOS converter
US4947061A (en) * 1989-02-13 1990-08-07 At&T Bell Laboratories CMOS to ECL output buffer circuit
US4968905A (en) * 1989-08-25 1990-11-06 Ncr Corporation Temperature compensated high speed ECL-to-CMOS logic level translator

Also Published As

Publication number Publication date
EP0395071B1 (de) 1995-07-12
EP0395071A2 (de) 1990-10-31
KR930007127B1 (ko) 1993-07-30
KR900017185A (ko) 1990-11-15
US5101125A (en) 1992-03-31
DE69020787T2 (de) 1995-12-21
JPH02285714A (ja) 1990-11-26
JP2549729B2 (ja) 1996-10-30
EP0395071A3 (de) 1991-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee