DE69012194T2 - Integrierter Halbleiterschaltkreis. - Google Patents

Integrierter Halbleiterschaltkreis.

Info

Publication number
DE69012194T2
DE69012194T2 DE69012194T DE69012194T DE69012194T2 DE 69012194 T2 DE69012194 T2 DE 69012194T2 DE 69012194 T DE69012194 T DE 69012194T DE 69012194 T DE69012194 T DE 69012194T DE 69012194 T2 DE69012194 T2 DE 69012194T2
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012194T
Other languages
English (en)
Other versions
DE69012194D1 (de
Inventor
Shinzou Nomura
Hiroshi Katsushima
Toru Kawasaki
Masao Unoki
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UMC Japan Co Ltd
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Nippon Steel Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Nippon Steel Semiconductor Corp filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE69012194D1 publication Critical patent/DE69012194D1/de
Publication of DE69012194T2 publication Critical patent/DE69012194T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
DE69012194T 1989-04-19 1990-04-19 Integrierter Halbleiterschaltkreis. Expired - Fee Related DE69012194T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9765089 1989-04-19
JP2042479A JPH0821579B2 (ja) 1989-04-19 1990-02-26 半導体素子・集積回路装置

Publications (2)

Publication Number Publication Date
DE69012194D1 DE69012194D1 (de) 1994-10-13
DE69012194T2 true DE69012194T2 (de) 1995-03-16

Family

ID=26382184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012194T Expired - Fee Related DE69012194T2 (de) 1989-04-19 1990-04-19 Integrierter Halbleiterschaltkreis.

Country Status (6)

Country Link
US (1) US5117272A (de)
EP (1) EP0393682B1 (de)
JP (1) JPH0821579B2 (de)
KR (1) KR960008902B1 (de)
CA (1) CA2014821C (de)
DE (1) DE69012194T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2952962B2 (ja) * 1989-05-31 1999-09-27 旭硝子株式会社 汚染防止保護器具
DE69225337T2 (de) * 1991-03-08 1998-08-27 Japan Gore Tex Inc In Harz versiegelte Halbleitervorrichtung bestehend aus porösem Fluorkohlenstoffharz
US5312716A (en) * 1991-06-06 1994-05-17 Asahi Glass Company Ltd. Process for producing a semiconductor
US5296283A (en) * 1992-01-13 1994-03-22 E. I. Du Pont De Nemours And Company Protective coating for machine-readable markings
US5502132A (en) * 1992-07-27 1996-03-26 Asahi Glass Company Ltd. Process for producing a perfluoro copolymer
US5364929A (en) * 1993-01-13 1994-11-15 E. I. Du Pont De Nemours And Company Dissolution of tetrafluoroethylene polymers at superautogenous pressure
US5438022A (en) 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
US5889104A (en) * 1996-01-11 1999-03-30 W. L. Gore & Associates, Inc. Low dielectric constant material for use as an insulation element in an electronic device
EP0769788A3 (de) * 1995-10-20 1998-01-14 W.L. Gore & Associates, Inc. Material mit niedriger dielektrischer Konstante für die Verwendung als Isolierelement in einem elektronischen Gerät
TW378345B (en) * 1997-01-22 2000-01-01 Hitachi Ltd Resin package type semiconductor device and manufacturing method thereof
WO1998044544A1 (en) * 1997-04-03 1998-10-08 W.L. Gore & Associates, Inc. Low dielectric constant material with improved dielectric strength
DE19752926A1 (de) * 1997-11-28 1999-06-10 Bosch Gmbh Robert Verfahren zum Aufbringen eines Schutzlacks auf einen Wafer
US6912775B1 (en) * 1998-02-25 2005-07-05 Seagate Technology Llc Assembly device for assembling components
US6894109B1 (en) * 1998-12-11 2005-05-17 Borealis Technology Oy Method of producing pelletized polyolefin
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6361582B1 (en) 2000-05-19 2002-03-26 Membrane Technology And Research, Inc. Gas separation using C3+ hydrocarbon-resistant membranes
US6572680B2 (en) 2000-05-19 2003-06-03 Membrane Technology And Research, Inc. Carbon dioxide gas separation using organic-vapor-resistant membranes
US6579341B2 (en) 2000-05-19 2003-06-17 Membrane Technology And Research, Inc. Nitrogen gas separation using organic-vapor-resistant membranes
US6544316B2 (en) 2000-05-19 2003-04-08 Membrane Technology And Research, Inc. Hydrogen gas separation using organic-vapor-resistant membranes
US6592650B2 (en) 2000-05-19 2003-07-15 Membrane Technology And Research, Inc. Gas separation using organic-vapor-resistant membranes and PSA
US6572679B2 (en) 2000-05-19 2003-06-03 Membrane Technology And Research, Inc. Gas separation using organic-vapor-resistant membranes in conjunction with organic-vapor-selective membranes
US6361583B1 (en) 2000-05-19 2002-03-26 Membrane Technology And Research, Inc. Gas separation using organic-vapor-resistant membranes
JP2003073435A (ja) * 2001-08-31 2003-03-12 Nof Corp 熱硬化性樹脂組成物、樹脂硬化膜および用途
AU2003216067A1 (en) * 2002-01-17 2003-09-02 Silecs Oy Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
US6896717B2 (en) * 2002-07-05 2005-05-24 Membrane Technology And Research, Inc. Gas separation using coated membranes
US7361990B2 (en) * 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
CA2669279C (en) * 2006-10-27 2017-01-03 Cms Technologies Holdings, Inc. Removal of water and methanol from fluids
GB2520546A (en) * 2013-11-25 2015-05-27 Esp Technology Ltd Polymer process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051262B2 (ja) * 1977-02-17 1985-11-13 富士通株式会社 半導体装置
JPS57181146A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Resin-sealed semiconductor device
US4818812A (en) * 1983-08-22 1989-04-04 International Business Machines Corporation Sealant for integrated circuit modules, polyester suitable therefor and preparation of polyester
JPS61154151A (ja) * 1984-12-27 1986-07-12 Nitto Electric Ind Co Ltd 半導体装置
JPS62177950A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd 半導体装置
CA1305823C (en) * 1986-08-29 1992-07-28 Union Carbide Corporation Photocurable blends of cyclic ethers and cycloaliphatic epoxides
JPS63238115A (ja) * 1987-03-27 1988-10-04 Asahi Glass Co Ltd 環状構造を有する含フツ素共重合体の製造法
JPH0727921B2 (ja) * 1987-07-31 1995-03-29 日本電気株式会社 半導体装置の製造方法
JPH0670197B2 (ja) * 1987-09-17 1994-09-07 ハニー化成株式会社 電着塗装用樹脂組成物
DE3808927A1 (de) * 1988-03-17 1989-10-05 Ciba Geigy Ag Negativ-fotoresists von polyimid-typ mit 1,2-disulfonen
JP2752393B2 (ja) * 1988-11-10 1998-05-18 旭硝子株式会社 コーティング用含フッ素重合体組成物

Also Published As

Publication number Publication date
JPH0368140A (ja) 1991-03-25
EP0393682A3 (en) 1990-12-19
KR960008902B1 (ko) 1996-07-05
EP0393682A2 (de) 1990-10-24
DE69012194D1 (de) 1994-10-13
KR900017105A (ko) 1990-11-15
EP0393682B1 (de) 1994-09-07
CA2014821A1 (en) 1990-10-19
US5117272A (en) 1992-05-26
JPH0821579B2 (ja) 1996-03-04
CA2014821C (en) 1993-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee