FR2627315B1 - Procede de preconditionnement, effacement et/ou programmation d'un composant de memoire eeprom - Google Patents

Procede de preconditionnement, effacement et/ou programmation d'un composant de memoire eeprom

Info

Publication number
FR2627315B1
FR2627315B1 FR888815691A FR8815691A FR2627315B1 FR 2627315 B1 FR2627315 B1 FR 2627315B1 FR 888815691 A FR888815691 A FR 888815691A FR 8815691 A FR8815691 A FR 8815691A FR 2627315 B1 FR2627315 B1 FR 2627315B1
Authority
FR
France
Prior art keywords
preconditioning
deleting
programming
memory component
eeprom memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888815691A
Other languages
English (en)
Other versions
FR2627315A1 (fr
Inventor
Jerry A Kreifels
Alan Baker
George Hoekstra
Virgil Niles Kynett
Steven Wells
Mark Winston
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2627315A1 publication Critical patent/FR2627315A1/fr
Application granted granted Critical
Publication of FR2627315B1 publication Critical patent/FR2627315B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
FR888815691A 1988-02-17 1988-11-30 Procede de preconditionnement, effacement et/ou programmation d'un composant de memoire eeprom Expired - Fee Related FR2627315B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/157,361 US5053990A (en) 1988-02-17 1988-02-17 Program/erase selection for flash memory

Publications (2)

Publication Number Publication Date
FR2627315A1 FR2627315A1 (fr) 1989-08-18
FR2627315B1 true FR2627315B1 (fr) 1993-04-30

Family

ID=22563397

Family Applications (2)

Application Number Title Priority Date Filing Date
FR8815621A Pending FR2627089A1 (fr) 1988-02-17 1988-11-21 Dispositif pour visser et devisser les aiguilles medicales
FR888815691A Expired - Fee Related FR2627315B1 (fr) 1988-02-17 1988-11-30 Procede de preconditionnement, effacement et/ou programmation d'un composant de memoire eeprom

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR8815621A Pending FR2627089A1 (fr) 1988-02-17 1988-11-21 Dispositif pour visser et devisser les aiguilles medicales

Country Status (5)

Country Link
US (1) US5053990A (fr)
JP (1) JPH0632226B2 (fr)
DE (1) DE3900798C2 (fr)
FR (2) FR2627089A1 (fr)
GB (1) GB2215155B (fr)

Families Citing this family (184)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935099A (en) 1992-09-09 1999-08-10 Sims Deltec, Inc. Drug pump systems and methods
US6241704B1 (en) 1901-11-22 2001-06-05 Sims Deltec, Inc. Drug pump systems and methods
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5293560A (en) * 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JP2648840B2 (ja) * 1988-11-22 1997-09-03 株式会社日立製作所 半導体記憶装置
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
JP2654596B2 (ja) * 1989-02-06 1997-09-17 株式会社日立製作所 不揮発性記憶装置
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US7190617B1 (en) * 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
JPH02310642A (ja) * 1989-05-25 1990-12-26 Toshiba Corp マイクロコンピュータシステムおよびデータ書込み方法
KR930000869B1 (ko) * 1989-11-30 1993-02-08 삼성전자 주식회사 페이지 소거 가능한 플래쉬형 이이피롬 장치
JPH03232196A (ja) * 1990-02-07 1991-10-16 Toshiba Corp 半導体記憶装置
JPH04221496A (ja) * 1990-03-29 1992-08-11 Intel Corp 単一基板上に設けられるコンピュータメモリ回路およびコンピュータメモリを消去するためのシーケンスを終らせる方法
JPH0426995A (ja) * 1990-05-18 1992-01-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
JP2519585B2 (ja) * 1990-07-03 1996-07-31 三菱電機株式会社 不揮発性半導体記憶装置
JP2636476B2 (ja) * 1990-07-17 1997-07-30 日本電気株式会社 不揮発性半導体記憶装置
GB2251323B (en) * 1990-12-31 1994-10-12 Intel Corp Disk emulation for a non-volatile semiconductor memory
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
FR2672709B1 (fr) * 1991-02-11 1994-09-30 Intel Corp Machine d'etat d'ordre.
JP3408552B2 (ja) * 1991-02-11 2003-05-19 インテル・コーポレーション 不揮発性半導体メモリをプログラム及び消去する回路とその方法
US5355464A (en) * 1991-02-11 1994-10-11 Intel Corporation Circuitry and method for suspending the automated erasure of a non-volatile semiconductor memory
US5546561A (en) * 1991-02-11 1996-08-13 Intel Corporation Circuitry and method for selectively protecting the integrity of data stored within a range of addresses within a non-volatile semiconductor memory
US5333300A (en) * 1991-02-11 1994-07-26 Intel Corporation Timing circuitry and method for controlling automated programming and erasing of a non-volatile semiconductor memory
KR960002004B1 (ko) * 1991-02-19 1996-02-09 가부시키가이샤 도시바 기록검증 제어회로를 갖춘 전기적으로 소거 및 프로그램가능한 독출전용 기억장치
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
US5396468A (en) * 1991-03-15 1995-03-07 Sundisk Corporation Streamlined write operation for EEPROM system
IT1254937B (it) * 1991-05-06 1995-10-11 Aggiornamento dinamico di memoria non volatile in un sistema informatico
DE4215063C2 (de) * 1991-05-10 1999-11-25 Intel Corp Einrichtung und Verfahren zum Seitenwechsel bei einem nicht-flüchtigen Speicher
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JP2870260B2 (ja) * 1991-09-27 1999-03-17 日本電気株式会社 不揮発性半導体記憶装置
FR2682522B1 (fr) * 1991-10-11 1997-01-10 Sgs Thomson Microelectronics Procede pour verifier le contenu apres effacement d'une memoire permanente effacable, notamment de type eprom, dispositif pour sa mise en óoeuvre et memoire integrant ce dispositif.
TW261687B (fr) 1991-11-26 1995-11-01 Hitachi Seisakusyo Kk
US6347051B2 (en) * 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
US5412793A (en) * 1991-12-03 1995-05-02 Intel Corporation Method for testing erase characteristics of a flash memory array
US5369647A (en) * 1991-12-16 1994-11-29 Intel Corporation Circuitry and method for testing a write state machine
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3080743B2 (ja) * 1991-12-27 2000-08-28 日本電気株式会社 不揮発性半導体記憶装置
JP3178909B2 (ja) * 1992-01-10 2001-06-25 株式会社東芝 半導体メモリ装置
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
WO1993019419A1 (fr) * 1992-03-16 1993-09-30 Curtis, Inc. Dispositif et procede d'emulateur de disque a semi-conducteurs
JP2716906B2 (ja) * 1992-03-27 1998-02-18 株式会社東芝 不揮発性半導体記憶装置
JPH05283708A (ja) * 1992-04-02 1993-10-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置，その製造方法および試験方法
US5327383A (en) * 1992-04-21 1994-07-05 Intel Corporation Method and circuitry for erasing a nonvolatile semiconductor memory incorporating row redundancy
US5347489A (en) * 1992-04-21 1994-09-13 Intel Corporation Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy
US6131159A (en) * 1992-05-08 2000-10-10 Paradyne Corporation System for downloading programs
JP3328321B2 (ja) 1992-06-22 2002-09-24 株式会社日立製作所 半導体記憶装置
US6549974B2 (en) * 1992-06-22 2003-04-15 Hitachi, Ltd. Semiconductor storage apparatus including a controller for sending first and second write commands to different nonvolatile memories in a parallel or time overlapped manner
JP2707521B2 (ja) * 1992-08-03 1998-01-28 株式会社日立製作所 半導体装置
US5479633A (en) * 1992-10-30 1995-12-26 Intel Corporation Method of controlling clean-up of a solid state memory disk storing floating sector data
US5740395A (en) * 1992-10-30 1998-04-14 Intel Corporation Method and apparatus for cleaning up a solid state memory disk storing floating sector data
US5357463A (en) * 1992-11-17 1994-10-18 Micron Semiconductor, Inc. Method for reverse programming of a flash EEPROM
FR2700056B1 (fr) * 1992-12-31 1995-02-10 Sgs Thomson Microelectronics Procédé de programmation en champ uniforme d'une mémoire électriquement programmable et mémoire mettant en Óoeuvre le procédé.
JPH06208460A (ja) * 1993-01-11 1994-07-26 Hitachi Ltd マイクロプログラムメモリ制御方式
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
US5581723A (en) * 1993-02-19 1996-12-03 Intel Corporation Method and apparatus for retaining flash block structure data during erase operations in a flash EEPROM memory array
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
KR970008188B1 (ko) * 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
US6078520A (en) * 1993-04-08 2000-06-20 Hitachi, Ltd. Flash memory control method and information processing system therewith
JPH0728772A (ja) 1993-06-25 1995-01-31 Hitachi Ltd マイクロコンピュータ
US6006304A (en) * 1993-06-25 1999-12-21 Hitachi, Ltd. Apparatus and method for calculating an erasure time for data stored in a flash memory
US5353256A (en) * 1993-06-30 1994-10-04 Intel Corporation Block specific status information in a memory device
FR2708763B1 (fr) * 1993-06-30 2002-04-05 Intel Corp Dispositif de mémoire flash, procédé et circuit de traitement d'un ordre d'utilisateur dans un dispositif de mémoire flash et système d'ordinateur comprenant un dispositif de mémoire flash.
US5748939A (en) * 1993-06-30 1998-05-05 Intel Corporation Memory device with a central control bus and a control access register for translating an access request into an access cycle on the central control bus
US5623620A (en) * 1993-06-30 1997-04-22 Intel Corporation Special test modes for a page buffer shared resource in a memory device
US5592641A (en) * 1993-06-30 1997-01-07 Intel Corporation Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
US5509134A (en) * 1993-06-30 1996-04-16 Intel Corporation Method and apparatus for execution of operations in a flash memory array
JP3737528B2 (ja) * 1993-06-30 2006-01-18 インテル・コーポレーション フラッシュ・メモリ・デバイス、それのページ・バッファー資源の割り当てをする方法および回路
AU7323994A (en) * 1993-07-13 1995-02-13 Sims Deltec, Inc. Medical pump and method of programming
JPH0757484A (ja) * 1993-08-11 1995-03-03 Sony Corp Ｎｏｒ型不揮発性メモリ制御回路
US6091639A (en) * 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
WO1995009483A1 (fr) * 1993-09-30 1995-04-06 Macronix International Co., Ltd. Circuit de detection de tension ameliore
FR2711831B1 (fr) * 1993-10-26 1997-09-26 Intel Corp Procédé et circuit de mémorisation et de hiérarchisation d'ordres d'effacement dans un dispositif de mémoire.
US5826063A (en) * 1993-11-08 1998-10-20 Cirrus Logic, Inc. Apparatus and method for programming the setup, command and recovery time periods within a transaction cycle
JPH07201191A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 不揮発性半導体メモリ装置
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
EP0933821B1 (fr) * 1994-03-03 2003-04-23 Rohm Corporation Cellule mémoire FLASH EEPROM mono-transistor basse tension programmable et éffaçable selon le procédé Fowler-Nordheim
JP3015661B2 (ja) * 1994-04-27 2000-03-06 株式会社東芝 不揮発性半導体メモリ
EP0681295A1 (fr) * 1994-05-06 1995-11-08 STMicroelectronics S.r.l. Procédé de déverminage de mémoire non-volatile EPROM flash
US5416738A (en) * 1994-05-27 1995-05-16 Alliance Semiconductor Corporation Single transistor flash EPROM cell and method of operation
US5608679A (en) * 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
CN1147866C (zh) * 1994-06-02 2004-04-28 英特尔公司 含多级单元的快擦存储器的读出电路
DE69426817T2 (de) * 1994-06-07 2001-08-02 St Microelectronics Srl Fertigungprüfungsverfahren von Flash-EEPROM-Vorrichtungen
US5537357A (en) * 1994-06-27 1996-07-16 Intel Corporation Method for preconditioning a nonvolatile memory array
US5513334A (en) * 1994-06-27 1996-04-30 Microchip Technologies, Inc. Memory device with switching of data stream modes
DE4425388B4 (de) * 1994-07-19 2005-07-21 Robert Bosch Gmbh Steuergerät
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
KR0142368B1 (ko) * 1994-09-09 1998-07-15 김광호 불휘발성 반도체 메모리장치의 자동프로그램 회로
US5778440A (en) * 1994-10-26 1998-07-07 Macronix International Co., Ltd. Floating gate memory device and method for terminating a program load cycle upon detecting a predetermined address/data pattern
WO1996037826A1 (fr) * 1995-05-26 1996-11-28 Macronix International Co., Ltd. Memoire a porte flottante a protocole de terminaison du cycle de chargement de programmes
JPH08137763A (ja) * 1994-11-04 1996-05-31 Fujitsu Ltd フラッシュメモリ制御装置
DE4440127B4 (de) * 1994-11-10 2007-11-08 Robert Bosch Gmbh Steuergerät
ATE209819T1 (de) * 1995-01-05 2001-12-15 Macronix Int Co Ltd Fortgeschrittene programmierverifikation für flash-speicher mit seitenmodus
US6108237A (en) * 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5682496A (en) * 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
GB2337619B (en) * 1995-03-21 2000-03-01 Hyundai Electronics Ind Threshold voltage verification circuit of a non-volatile memory cell and program and erasure verification method using the same
KR0145382B1 (ko) * 1995-03-21 1998-08-17 김주용 플래쉬 이이피롬셀의 문턱전압 자동 검증회로
US5682346A (en) * 1995-03-29 1997-10-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having suitable writing efficiency
JP3807744B2 (ja) * 1995-06-07 2006-08-09 マクロニクス インターナショナル カンパニイ リミテッド 可変プログラムパルス高及びパルス幅によるページモードフラッシュメモリ用自動プログラミングアルゴリズム
JP3059076B2 (ja) * 1995-06-19 2000-07-04 シャープ株式会社 不揮発性半導体記憶装置
JP3487690B2 (ja) * 1995-06-20 2004-01-19 シャープ株式会社 不揮発性半導体記憶装置
JP3782840B2 (ja) 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5822581A (en) * 1995-09-29 1998-10-13 Intel Corporation Method for CMOS configuration information storage and retrieval in flash
KR100208433B1 (ko) * 1995-12-27 1999-07-15 김영환 플래쉬 메모리 소자 및 그를 이용한 프로그램 방법
US5930504A (en) * 1996-07-22 1999-07-27 Intel Corporation Dynamic nonvolatile memory update in a computer system
FR2756658B1 (fr) * 1996-11-29 1999-01-22 Sgs Thomson Microelectronics Memoire electronique non volatile et son procede de gestion
US6229737B1 (en) 1996-12-12 2001-05-08 Ericsson Inc. Method and apparatus for initializing semiconductor memory
US5937423A (en) * 1996-12-26 1999-08-10 Intel Corporation Register interface for flash EEPROM memory arrays
US6279069B1 (en) * 1996-12-26 2001-08-21 Intel Corporation Interface for flash EEPROM memory arrays
US5922055A (en) * 1997-02-25 1999-07-13 Motorola, Inc. Method for determining a type of a serial EEPROM and plug and play controller
TW380255B (en) * 1997-02-26 2000-01-21 Toshiba Corp Semiconductor memory
US5787039A (en) * 1997-03-06 1998-07-28 Macronix International Co., Ltd. Low current floating gate programming with bit-by-bit verification
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US5930826A (en) * 1997-04-07 1999-07-27 Aplus Integrated Circuits, Inc. Flash memory protection attribute status bits held in a flash memory array
US6009496A (en) * 1997-10-30 1999-12-28 Winbond Electronics Corp. Microcontroller with programmable embedded flash memory
JP3599541B2 (ja) 1997-11-27 2004-12-08 シャープ株式会社 不揮発性半導体記憶装置
US6119226A (en) * 1998-01-06 2000-09-12 Macronix International Co., Ltd. Memory supporting multiple address protocols
US6040993A (en) * 1998-02-23 2000-03-21 Macronix International Co., Ltd. Method for programming an analog/multi-level flash EEPROM
US6040997A (en) * 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
US6256755B1 (en) 1998-10-19 2001-07-03 International Business Machines Corporation Apparatus and method for detecting defective NVRAM cells
WO2000030116A1 (fr) 1998-11-17 2000-05-25 Lexar Media, Inc. Procede et dispositif pour circuit de commande de la memoire
DE69932703T2 (de) * 1999-04-21 2007-09-06 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Differenzierung von Programmier- und Löschspannung in nichtflüchtigem Speicher und Herstellungsverfahren hierfür
JP4034923B2 (ja) * 1999-05-07 2008-01-16 富士通株式会社 半導体記憶装置の動作制御方法および半導体記憶装置
DE10014272B4 (de) * 2000-03-22 2008-06-05 Endress + Hauser Gmbh + Co. Kg Feldgerät, sowie Verfahren zum Umprogrammieren eines Feldgerätes
US6418059B1 (en) 2000-06-26 2002-07-09 Intel Corporation Method and apparatus for non-volatile memory bit sequence program controller
US6732306B2 (en) 2000-12-26 2004-05-04 Intel Corporation Special programming mode with hashing
US6834323B2 (en) 2000-12-26 2004-12-21 Intel Corporation Method and apparatus including special programming mode circuitry which disables internal program verification operations by a memory
US7007131B2 (en) * 2000-12-27 2006-02-28 Intel Corporation Method and apparatus including special programming mode circuitry which disables internal program verification operations by a memory
JP2002230985A (ja) 2001-02-06 2002-08-16 Sharp Corp 不揮発性半導体記憶装置及びその制御方法
US20020184369A1 (en) * 2001-05-31 2002-12-05 Parkinson Steven William Appointment scheme for redistributing service access
US8775196B2 (en) 2002-01-29 2014-07-08 Baxter International Inc. System and method for notification and escalation of medical data
US10173008B2 (en) 2002-01-29 2019-01-08 Baxter International Inc. System and method for communicating with a dialysis machine through a network
US8504179B2 (en) 2002-02-28 2013-08-06 Smiths Medical Asd, Inc. Programmable medical infusion pump
US8250483B2 (en) 2002-02-28 2012-08-21 Smiths Medical Asd, Inc. Programmable medical infusion pump displaying a banner
US8234128B2 (en) 2002-04-30 2012-07-31 Baxter International, Inc. System and method for verifying medical device operational parameters
KR101174308B1 (ko) * 2002-10-28 2012-08-16 쌘디스크 코포레이션 비휘발성 저장 시스템들에서 자동 웨어 레벨링
US8954336B2 (en) 2004-02-23 2015-02-10 Smiths Medical Asd, Inc. Server for medical device
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
US7110301B2 (en) * 2004-05-07 2006-09-19 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory device and multi-block erase method thereof
JP4051055B2 (ja) * 2004-10-14 2008-02-20 シャープ株式会社 不揮発性メモリの消去パルス設定方法及び消去不良スクリーニング方法
US20060155916A1 (en) * 2005-01-11 2006-07-13 Gilbert Carl L Writing uncorrupted data to electronic memory
US7387235B2 (en) * 2005-03-16 2008-06-17 Lear Corporation Mutual authentication security system with recovery from partial programming
US7206235B1 (en) 2005-10-14 2007-04-17 Sandisk Corporation Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US7286406B2 (en) * 2005-10-14 2007-10-23 Sandisk Corporation Method for controlled programming of non-volatile memory exhibiting bit line coupling
US8965707B2 (en) 2006-08-03 2015-02-24 Smiths Medical Asd, Inc. Interface for medical infusion pump
US8435206B2 (en) 2006-08-03 2013-05-07 Smiths Medical Asd, Inc. Interface for medical infusion pump
US8858526B2 (en) 2006-08-03 2014-10-14 Smiths Medical Asd, Inc. Interface for medical infusion pump
US8149131B2 (en) 2006-08-03 2012-04-03 Smiths Medical Asd, Inc. Interface for medical infusion pump
KR101364443B1 (ko) * 2007-01-31 2014-02-17 삼성전자주식회사 메모리 시스템, 이 시스템을 위한 메모리 제어기와 메모리,이 시스템의 신호 구성 방법
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US8300477B2 (en) * 2008-03-03 2012-10-30 Rambus, Inc. Piecewise erasure of flash memory
JP5218228B2 (ja) * 2008-04-23 2013-06-26 新東工業株式会社 搬送装置及びブラスト加工装置
US8133197B2 (en) 2008-05-02 2012-03-13 Smiths Medical Asd, Inc. Display for pump
US20090307140A1 (en) * 2008-06-06 2009-12-10 Upendra Mardikar Mobile device over-the-air (ota) registration and point-of-sale (pos) payment
US8057679B2 (en) 2008-07-09 2011-11-15 Baxter International Inc. Dialysis system having trending and alert generation
US10089443B2 (en) 2012-05-15 2018-10-02 Baxter International Inc. Home medical device systems and methods for therapy prescription and tracking, servicing and inventory
US8041886B2 (en) * 2008-09-15 2011-10-18 Seagate Technology Llc System and method of managing memory
US8554579B2 (en) 2008-10-13 2013-10-08 Fht, Inc. Management, reporting and benchmarking of medication preparation
US8862767B2 (en) 2011-09-02 2014-10-14 Ebay Inc. Secure elements broker (SEB) for application communication channel selector optimization
AU2013309509A1 (en) 2012-08-31 2015-03-19 Baxter Corporation Englewood Medication requisition fulfillment system and method
CA2889352C (fr) 2012-10-26 2021-12-07 Baxter Corporation Englewood Station de travail amelioree pour systeme de preparation de doses de medicaments
AU2013335277B2 (en) 2012-10-26 2015-07-16 Baxter Corporation Englewood Improved image acquisition for medical dose preparation system
KR20150113077A (ko) 2013-01-28 2015-10-07 스미스 메디칼 에이에스디, 인크. 약물 안전 장치 및 방법
CA2953392A1 (fr) 2014-06-30 2016-01-07 Baxter Corporation Englewood Echange d'informations medicales gerees
US11575673B2 (en) 2014-09-30 2023-02-07 Baxter Corporation Englewood Central user management in a distributed healthcare information management system
US11107574B2 (en) 2014-09-30 2021-08-31 Baxter Corporation Englewood Management of medication preparation with formulary management
EP3937116A1 (fr) 2014-12-05 2022-01-12 Baxter Corporation Englewood Analyse de données de préparation de dose
JP2018507487A (ja) 2015-03-03 2018-03-15 バクスター・コーポレーション・イングルウッドＢａｘｔｅｒ Ｃｏｒｐｏｒａｔｉｏｎ Ｅｎｇｌｅｗｏｏｄ アラート統合を伴う薬局ワークフロー管理
CN116206744A (zh) 2015-06-25 2023-06-02 甘布罗伦迪亚股份公司 具有分布式数据库的医疗装置系统和方法
WO2018043069A1 (fr) 2016-09-05 2018-03-08 ローランド株式会社 Instrument de percussion électronique
US11516183B2 (en) 2016-12-21 2022-11-29 Gambro Lundia Ab Medical device system including information technology infrastructure having secure cluster domain supporting external domain

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
US4623336A (en) * 1984-05-11 1986-11-18 Pedicano James J Disposable safety needle sheath
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置
US4752871A (en) * 1985-09-30 1988-06-21 Motorola, Inc. Single-chip microcomputer having a program register for controlling two EEPROM arrays
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
EP0255215A3 (fr) * 1986-06-10 1988-10-05 Seldoren Limited Fourreaux de protection pour aiguilles médicales
US4747835A (en) * 1987-02-19 1988-05-31 Jeffrey Sandhaus Safety device for hypodermic needles

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JPH0210596A (ja) 1990-01-16
FR2627315A1 (fr) 1989-08-18
JPH0632226B2 (ja) 1994-04-27
DE3900798A1 (de) 1989-08-31
US5053990A (en) 1991-10-01
FR2627089A1 (fr) 1989-08-18

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