ES2163263T3 - Diseños de susceptor para peliculas delgadas de carburo de silicio. - Google Patents

Diseños de susceptor para peliculas delgadas de carburo de silicio.

Info

Publication number
ES2163263T3
ES2163263T3 ES98911874T ES98911874T ES2163263T3 ES 2163263 T3 ES2163263 T3 ES 2163263T3 ES 98911874 T ES98911874 T ES 98911874T ES 98911874 T ES98911874 T ES 98911874T ES 2163263 T3 ES2163263 T3 ES 2163263T3
Authority
ES
Spain
Prior art keywords
substrate
susceptor
silicon carbide
receiving surface
susceptor portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES98911874T
Other languages
English (en)
Inventor
Hua-Shuang Kong
Calvin Carter Jr
Joseph Sumakeris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ES2163263T3 publication Critical patent/ES2163263T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Se describe un soporte para minimizar o eliminar los gradientes térmicos que afectan a una oblea sustrato durante el crecimiento epitaxial. El soporte incluye una primera porción de soporte que incluye una superficie para recibir una oblea de sustrato semiconductor en ella y una segunda porción de soporte. El soporte se caracteriza porque la segunda porción de soporte se enfrenta a la superficie receptora de sustrato y está separada de la superficie receptora de sustrato, siendo la separación suficientemente grande para permitir el flujo de gases entre ellas para el crecimiento epitaxial en un sustrato sobre la superficie, y siendo suficientemente pequeña para que la segunda porción de soporte caliente la cara expuesta del sustrato sustancialmente a la misma temperatura que la primera porción de soporte calienta la cara del sustrato que está en contacto directo con la superficie receptora de sustrato.
ES98911874T 1997-03-24 1998-03-19 Diseños de susceptor para peliculas delgadas de carburo de silicio. Expired - Lifetime ES2163263T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/823,365 US6217662B1 (en) 1997-03-24 1997-03-24 Susceptor designs for silicon carbide thin films

Publications (1)

Publication Number Publication Date
ES2163263T3 true ES2163263T3 (es) 2002-01-16

Family

ID=25238547

Family Applications (1)

Application Number Title Priority Date Filing Date
ES98911874T Expired - Lifetime ES2163263T3 (es) 1997-03-24 1998-03-19 Diseños de susceptor para peliculas delgadas de carburo de silicio.

Country Status (11)

Country Link
US (3) US6217662B1 (es)
EP (1) EP0970267B1 (es)
JP (1) JP2001518238A (es)
KR (1) KR100504634B1 (es)
CN (1) CN1220800C (es)
AT (1) ATE206774T1 (es)
AU (1) AU6572698A (es)
CA (1) CA2284771A1 (es)
DE (1) DE69801987T2 (es)
ES (1) ES2163263T3 (es)
WO (1) WO1998042897A1 (es)

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ATE206774T1 (de) 2001-10-15
DE69801987T2 (de) 2002-05-02
AU6572698A (en) 1998-10-20
KR100504634B1 (ko) 2005-08-04
EP0970267A1 (en) 2000-01-12
US6217662B1 (en) 2001-04-17
CN1220800C (zh) 2005-09-28
US20010009141A1 (en) 2001-07-26
WO1998042897A1 (en) 1998-10-01
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