ATE388482T1 - Örtliche erwärmung und kühlung von substraten - Google Patents
Örtliche erwärmung und kühlung von substratenInfo
- Publication number
- ATE388482T1 ATE388482T1 AT01912062T AT01912062T ATE388482T1 AT E388482 T1 ATE388482 T1 AT E388482T1 AT 01912062 T AT01912062 T AT 01912062T AT 01912062 T AT01912062 T AT 01912062T AT E388482 T1 ATE388482 T1 AT E388482T1
- Authority
- AT
- Austria
- Prior art keywords
- cooling
- gas
- wafer
- substrates
- local heating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Non-Reversible Transmitting Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/527,873 US7037797B1 (en) | 2000-03-17 | 2000-03-17 | Localized heating and cooling of substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE388482T1 true ATE388482T1 (de) | 2008-03-15 |
Family
ID=24103294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01912062T ATE388482T1 (de) | 2000-03-17 | 2001-03-15 | Örtliche erwärmung und kühlung von substraten |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7037797B1 (de) |
| EP (1) | EP1264333B1 (de) |
| JP (1) | JP5511115B2 (de) |
| KR (1) | KR100784580B1 (de) |
| AT (1) | ATE388482T1 (de) |
| DE (1) | DE60133092T2 (de) |
| TW (1) | TW495813B (de) |
| WO (1) | WO2001069656A2 (de) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380751B2 (en) | 1992-06-11 | 2002-04-30 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
| US5345170A (en) | 1992-06-11 | 1994-09-06 | Cascade Microtech, Inc. | Wafer probe station having integrated guarding, Kelvin connection and shielding systems |
| US5561377A (en) | 1995-04-14 | 1996-10-01 | Cascade Microtech, Inc. | System for evaluating probing networks |
| US6232789B1 (en) | 1997-05-28 | 2001-05-15 | Cascade Microtech, Inc. | Probe holder for low current measurements |
| US5914613A (en) | 1996-08-08 | 1999-06-22 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
| US6002263A (en) | 1997-06-06 | 1999-12-14 | Cascade Microtech, Inc. | Probe station having inner and outer shielding |
| US6578264B1 (en) | 1999-06-04 | 2003-06-17 | Cascade Microtech, Inc. | Method for constructing a membrane probe using a depression |
| US6445202B1 (en) | 1999-06-30 | 2002-09-03 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| US6838890B2 (en) | 2000-02-25 | 2005-01-04 | Cascade Microtech, Inc. | Membrane probing system |
| US6965226B2 (en) | 2000-09-05 | 2005-11-15 | Cascade Microtech, Inc. | Chuck for holding a device under test |
| US6914423B2 (en) | 2000-09-05 | 2005-07-05 | Cascade Microtech, Inc. | Probe station |
| DE10143173A1 (de) | 2000-12-04 | 2002-06-06 | Cascade Microtech Inc | Wafersonde |
| AU2002327490A1 (en) | 2001-08-21 | 2003-06-30 | Cascade Microtech, Inc. | Membrane probing system |
| WO2003020467A1 (en) | 2001-08-31 | 2003-03-13 | Cascade Microtech, Inc. | Optical testing device |
| US6777964B2 (en) | 2002-01-25 | 2004-08-17 | Cascade Microtech, Inc. | Probe station |
| JP2003307458A (ja) * | 2002-04-15 | 2003-10-31 | Akifumi Ito | 基材の温度測定方法および温度測定装置 |
| US7427329B2 (en) | 2002-05-08 | 2008-09-23 | Asm International N.V. | Temperature control for single substrate semiconductor processing reactor |
| US6843201B2 (en) | 2002-05-08 | 2005-01-18 | Asm International Nv | Temperature control for single substrate semiconductor processing reactor |
| JP2005527823A (ja) | 2002-05-23 | 2005-09-15 | カスケード マイクロテック インコーポレイテッド | デバイスのテスト用プローブ |
| FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
| US6847219B1 (en) | 2002-11-08 | 2005-01-25 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
| US6724205B1 (en) | 2002-11-13 | 2004-04-20 | Cascade Microtech, Inc. | Probe for combined signals |
| US7250779B2 (en) | 2002-11-25 | 2007-07-31 | Cascade Microtech, Inc. | Probe station with low inductance path |
| US6861856B2 (en) | 2002-12-13 | 2005-03-01 | Cascade Microtech, Inc. | Guarded tub enclosure |
| US20070128878A1 (en) * | 2003-03-03 | 2007-06-07 | Manabu Izumi | Substrate processing apparatus and method for producing a semiconductor device |
| JP3910151B2 (ja) * | 2003-04-01 | 2007-04-25 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
| US7221172B2 (en) | 2003-05-06 | 2007-05-22 | Cascade Microtech, Inc. | Switched suspended conductor and connection |
| US7492172B2 (en) | 2003-05-23 | 2009-02-17 | Cascade Microtech, Inc. | Chuck for holding a device under test |
| US7057404B2 (en) | 2003-05-23 | 2006-06-06 | Sharp Laboratories Of America, Inc. | Shielded probe for testing a device under test |
| US7250626B2 (en) | 2003-10-22 | 2007-07-31 | Cascade Microtech, Inc. | Probe testing structure |
| US7187188B2 (en) | 2003-12-24 | 2007-03-06 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
| JP2008502167A (ja) | 2004-06-07 | 2008-01-24 | カスケード マイクロテック インコーポレイテッド | 熱光学チャック |
| US7330041B2 (en) | 2004-06-14 | 2008-02-12 | Cascade Microtech, Inc. | Localizing a temperature of a device for testing |
| TWI366234B (en) * | 2004-06-30 | 2012-06-11 | Intel Corp | Method, apparatus and system to control temperature of a wafer edge or wafer edge support during heating, and machine-readable medium having data therein |
| US20060286807A1 (en) * | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
| US20060004493A1 (en) * | 2004-06-30 | 2006-01-05 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
| JP4980903B2 (ja) | 2004-07-07 | 2012-07-18 | カスケード マイクロテック インコーポレイテッド | 膜懸垂プローブを具えるプローブヘッド |
| JP2008512680A (ja) | 2004-09-13 | 2008-04-24 | カスケード マイクロテック インコーポレイテッド | 両面プロービング構造体 |
| US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
| DE102005013831B4 (de) * | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
| US7745762B2 (en) | 2005-06-01 | 2010-06-29 | Mattson Technology, Inc. | Optimizing the thermal budget during a pulsed heating process |
| US7449899B2 (en) | 2005-06-08 | 2008-11-11 | Cascade Microtech, Inc. | Probe for high frequency signals |
| EP1932003A2 (de) | 2005-06-13 | 2008-06-18 | Cascade Microtech, Inc. | Breitbandige aktiv-passiv-differenzsignalsonde |
| US7609077B2 (en) | 2006-06-09 | 2009-10-27 | Cascade Microtech, Inc. | Differential signal probe with integral balun |
| US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
| US7443186B2 (en) | 2006-06-12 | 2008-10-28 | Cascade Microtech, Inc. | On-wafer test structures for differential signals |
| JP4870604B2 (ja) * | 2007-03-29 | 2012-02-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| KR100870567B1 (ko) * | 2007-06-27 | 2008-11-27 | 삼성전자주식회사 | 플라즈마를 이용한 이온 도핑 방법 및 플라즈마 이온 도핑장치 |
| JP5456257B2 (ja) * | 2008-01-08 | 2014-03-26 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US8410806B2 (en) | 2008-11-21 | 2013-04-02 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
| US8490419B2 (en) * | 2009-08-20 | 2013-07-23 | United States Thermoelectric Consortium | Interlocked jets cooling method and apparatus |
| US20110155058A1 (en) * | 2009-12-18 | 2011-06-30 | Applied Materials, Inc. | Substrate processing apparatus having a radiant cavity |
| JP5982758B2 (ja) * | 2011-02-23 | 2016-08-31 | 東京エレクトロン株式会社 | マイクロ波照射装置 |
| US20120225203A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
| DE102012101923B4 (de) * | 2012-03-07 | 2019-11-07 | Osram Opto Semiconductors Gmbh | Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens |
| DE102012205616B4 (de) * | 2012-04-04 | 2016-07-14 | Siltronic Ag | Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung |
| JP2016507763A (ja) * | 2012-12-17 | 2016-03-10 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のための基板サポート及びリソグラフィ装置 |
| WO2014174803A1 (ja) * | 2013-04-22 | 2014-10-30 | パナソニック株式会社 | El表示装置の製造方法 |
| US9511549B2 (en) | 2014-06-02 | 2016-12-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Anisotropic thermal energy guiding shells and methods for fabricating thermal energy guiding shells |
| US10458962B2 (en) | 2016-07-22 | 2019-10-29 | Pulmostics Limited | Temperature control for surface acoustic wave sensor |
| US11127607B2 (en) * | 2019-11-11 | 2021-09-21 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Heat processing system |
| KR102607844B1 (ko) * | 2020-07-10 | 2023-11-30 | 세메스 주식회사 | 기판 처리 장치 및 기판 지지 유닛 |
| CN113234914B (zh) * | 2021-04-16 | 2022-07-19 | 北京钢研高纳科技股份有限公司 | 基于加热气体精确控温的梯度热处理炉及热处理方法 |
| JP7565252B2 (ja) | 2021-08-26 | 2024-10-10 | 芝浦メカトロニクス株式会社 | 加熱処理装置 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
| JPS62282437A (ja) * | 1986-05-31 | 1987-12-08 | Shinku Riko Kk | 半導体ウエハ処理用急速加熱冷却装置 |
| JPS63124528A (ja) * | 1986-11-14 | 1988-05-28 | Hitachi Ltd | 半導体製造装置 |
| US5228501A (en) | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
| JPS63291419A (ja) | 1987-05-24 | 1988-11-29 | Tatsumo Kk | 加熱処理装置 |
| US4836138A (en) | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
| JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
| US4914276A (en) | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
| US5160545A (en) | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
| EP0423327B1 (de) | 1989-05-08 | 1994-03-30 | Koninklijke Philips Electronics N.V. | Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck |
| DE3943478C2 (de) * | 1989-05-08 | 1995-11-16 | Philips Electronics Nv | Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumbehandlungsanlage |
| JPH02301173A (ja) | 1989-05-16 | 1990-12-13 | Tokin Corp | 圧電磁器組成物 |
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| US5129360A (en) | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
| US5252366A (en) | 1990-01-24 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer |
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| KR940011708B1 (ko) | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | 기판온도제어기구 |
| JPH045822A (ja) | 1990-04-23 | 1992-01-09 | Sumitomo Electric Ind Ltd | ランプアニール装置および方法 |
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| JPH04266015A (ja) * | 1991-02-21 | 1992-09-22 | Fuji Electric Co Ltd | 水素化非晶質シリコン膜の作成方法 |
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| US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
| US5449883A (en) | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
| JP3380988B2 (ja) | 1993-04-21 | 2003-02-24 | 東京エレクトロン株式会社 | 熱処理装置 |
| WO1995016800A1 (en) | 1993-12-17 | 1995-06-22 | Brooks Automation, Inc. | Apparatus for heating or cooling wafers |
| JP3234091B2 (ja) | 1994-03-10 | 2001-12-04 | 株式会社日立製作所 | 表面処理装置 |
| US5431700A (en) | 1994-03-30 | 1995-07-11 | Fsi International, Inc. | Vertical multi-process bake/chill apparatus |
| JPH0845909A (ja) * | 1994-07-26 | 1996-02-16 | Sony Corp | 試料台 |
| JPH08191059A (ja) * | 1995-01-09 | 1996-07-23 | Hitachi Ltd | プラズマ処理装置 |
| JP3288200B2 (ja) | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
| US6239038B1 (en) * | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
| US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
| US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
| US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
| US5846375A (en) | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
| US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
| US5814365A (en) | 1997-08-15 | 1998-09-29 | Micro C Technologies, Inc. | Reactor and method of processing a semiconductor substate |
| US6018616A (en) | 1998-02-23 | 2000-01-25 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
| US6105274A (en) | 1999-03-18 | 2000-08-22 | International Business Machines Corporation | Cryogenic/phase change cooling for rapid thermal process systems |
| US6100506A (en) * | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
-
2000
- 2000-03-17 US US09/527,873 patent/US7037797B1/en not_active Expired - Lifetime
-
2001
- 2001-03-15 EP EP01912062A patent/EP1264333B1/de not_active Expired - Lifetime
- 2001-03-15 WO PCT/IB2001/000392 patent/WO2001069656A2/en not_active Ceased
- 2001-03-15 JP JP2001567023A patent/JP5511115B2/ja not_active Expired - Fee Related
- 2001-03-15 KR KR1020027012183A patent/KR100784580B1/ko not_active Expired - Lifetime
- 2001-03-15 DE DE60133092T patent/DE60133092T2/de not_active Expired - Lifetime
- 2001-03-15 AT AT01912062T patent/ATE388482T1/de not_active IP Right Cessation
- 2001-06-04 TW TW090106205A patent/TW495813B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1264333B1 (de) | 2008-03-05 |
| EP1264333A2 (de) | 2002-12-11 |
| TW495813B (en) | 2002-07-21 |
| KR100784580B1 (ko) | 2007-12-10 |
| KR20030007466A (ko) | 2003-01-23 |
| WO2001069656A3 (en) | 2002-03-14 |
| DE60133092D1 (de) | 2008-04-17 |
| US7037797B1 (en) | 2006-05-02 |
| DE60133092T2 (de) | 2009-02-19 |
| JP2003526940A (ja) | 2003-09-09 |
| WO2001069656A2 (en) | 2001-09-20 |
| JP5511115B2 (ja) | 2014-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |