ATE388482T1 - Örtliche erwärmung und kühlung von substraten - Google Patents
Örtliche erwärmung und kühlung von substratenInfo
- Publication number
- ATE388482T1 ATE388482T1 AT01912062T AT01912062T ATE388482T1 AT E388482 T1 ATE388482 T1 AT E388482T1 AT 01912062 T AT01912062 T AT 01912062T AT 01912062 T AT01912062 T AT 01912062T AT E388482 T1 ATE388482 T1 AT E388482T1
- Authority
- AT
- Austria
- Prior art keywords
- cooling
- gas
- wafer
- substrates
- local heating
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 abstract 4
- 238000001816 cooling Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/527,873 US7037797B1 (en) | 2000-03-17 | 2000-03-17 | Localized heating and cooling of substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE388482T1 true ATE388482T1 (de) | 2008-03-15 |
Family
ID=24103294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01912062T ATE388482T1 (de) | 2000-03-17 | 2001-03-15 | Örtliche erwärmung und kühlung von substraten |
Country Status (8)
Country | Link |
---|---|
US (1) | US7037797B1 (de) |
EP (1) | EP1264333B1 (de) |
JP (1) | JP5511115B2 (de) |
KR (1) | KR100784580B1 (de) |
AT (1) | ATE388482T1 (de) |
DE (1) | DE60133092T2 (de) |
TW (1) | TW495813B (de) |
WO (1) | WO2001069656A2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6445202B1 (en) | 1999-06-30 | 2002-09-03 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
WO2003052435A1 (en) | 2001-08-21 | 2003-06-26 | Cascade Microtech, Inc. | Membrane probing system |
JP2003307458A (ja) * | 2002-04-15 | 2003-10-31 | Akifumi Ito | 基材の温度測定方法および温度測定装置 |
US7427329B2 (en) | 2002-05-08 | 2008-09-23 | Asm International N.V. | Temperature control for single substrate semiconductor processing reactor |
US6843201B2 (en) | 2002-05-08 | 2005-01-18 | Asm International Nv | Temperature control for single substrate semiconductor processing reactor |
FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
JP4264084B2 (ja) * | 2003-03-03 | 2009-05-13 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP3910151B2 (ja) * | 2003-04-01 | 2007-04-25 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
US7492172B2 (en) | 2003-05-23 | 2009-02-17 | Cascade Microtech, Inc. | Chuck for holding a device under test |
TWI366234B (en) * | 2004-06-30 | 2012-06-11 | Intel Corp | Method, apparatus and system to control temperature of a wafer edge or wafer edge support during heating, and machine-readable medium having data therein |
US20060004493A1 (en) * | 2004-06-30 | 2006-01-05 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
US20060286807A1 (en) * | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
JP2008512680A (ja) | 2004-09-13 | 2008-04-24 | カスケード マイクロテック インコーポレイテッド | 両面プロービング構造体 |
DE102005013831B4 (de) * | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
JP2008546203A (ja) | 2005-06-01 | 2008-12-18 | マットソン テクノロジー インコーポレイテッド | パルス化された加熱処理の間に熱収支を最適化する方法 |
JP4870604B2 (ja) * | 2007-03-29 | 2012-02-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
KR100870567B1 (ko) * | 2007-06-27 | 2008-11-27 | 삼성전자주식회사 | 플라즈마를 이용한 이온 도핑 방법 및 플라즈마 이온 도핑장치 |
JP5456257B2 (ja) * | 2008-01-08 | 2014-03-26 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US8410806B2 (en) | 2008-11-21 | 2013-04-02 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
US8490419B2 (en) * | 2009-08-20 | 2013-07-23 | United States Thermoelectric Consortium | Interlocked jets cooling method and apparatus |
US20110155058A1 (en) * | 2009-12-18 | 2011-06-30 | Applied Materials, Inc. | Substrate processing apparatus having a radiant cavity |
JP5982758B2 (ja) * | 2011-02-23 | 2016-08-31 | 東京エレクトロン株式会社 | マイクロ波照射装置 |
US20120225203A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
DE102012101923B4 (de) * | 2012-03-07 | 2019-11-07 | Osram Opto Semiconductors Gmbh | Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens |
DE102012205616B4 (de) * | 2012-04-04 | 2016-07-14 | Siltronic Ag | Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung |
JP2016507763A (ja) * | 2012-12-17 | 2016-03-10 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のための基板サポート及びリソグラフィ装置 |
WO2014174803A1 (ja) * | 2013-04-22 | 2014-10-30 | パナソニック株式会社 | El表示装置の製造方法 |
US9511549B2 (en) | 2014-06-02 | 2016-12-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Anisotropic thermal energy guiding shells and methods for fabricating thermal energy guiding shells |
US10458962B2 (en) * | 2016-07-22 | 2019-10-29 | Pulmostics Limited | Temperature control for surface acoustic wave sensor |
US11127607B2 (en) * | 2019-11-11 | 2021-09-21 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Heat processing system |
CN113234914B (zh) * | 2021-04-16 | 2022-07-19 | 北京钢研高纳科技股份有限公司 | 基于加热气体精确控温的梯度热处理炉及热处理方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
JPS62282437A (ja) * | 1986-05-31 | 1987-12-08 | Shinku Riko Kk | 半導体ウエハ処理用急速加熱冷却装置 |
JPS63124528A (ja) * | 1986-11-14 | 1988-05-28 | Hitachi Ltd | 半導体製造装置 |
US5228501A (en) | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
JPS63291419A (ja) | 1987-05-24 | 1988-11-29 | Tatsumo Kk | 加熱処理装置 |
US4836138A (en) | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
US4914276A (en) | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
US5160545A (en) | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
EP0423327B1 (de) | 1989-05-08 | 1994-03-30 | Koninklijke Philips Electronics N.V. | Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck |
DE3915039A1 (de) * | 1989-05-08 | 1990-11-15 | Balzers Hochvakuum | Hubtisch |
JPH02301173A (ja) | 1989-05-16 | 1990-12-13 | Tokin Corp | 圧電磁器組成物 |
US5002010A (en) | 1989-10-18 | 1991-03-26 | Varian Associates, Inc. | Vacuum vessel |
JPH0693440B2 (ja) | 1990-01-19 | 1994-11-16 | ジー スクウェアード セミコンダクター コーポレイション | 急速加熱装置及び方法 |
US5252366A (en) | 1990-01-24 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer |
US5129360A (en) | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
KR940011708B1 (ko) | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | 기판온도제어기구 |
JPH045822A (ja) | 1990-04-23 | 1992-01-09 | Sumitomo Electric Ind Ltd | ランプアニール装置および方法 |
US5673750A (en) | 1990-05-19 | 1997-10-07 | Hitachi, Ltd. | Vacuum processing method and apparatus |
JPH04266015A (ja) * | 1991-02-21 | 1992-09-22 | Fuji Electric Co Ltd | 水素化非晶質シリコン膜の作成方法 |
US5199483A (en) | 1991-05-15 | 1993-04-06 | Applied Materials, Inc. | Method and apparatus for cooling wafers |
US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
US5449883A (en) | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
JP3380988B2 (ja) | 1993-04-21 | 2003-02-24 | 東京エレクトロン株式会社 | 熱処理装置 |
JPH09506744A (ja) | 1993-12-17 | 1997-06-30 | ブルックス オートメーション インコーポレイテッド | ウェハの加熱冷却装置 |
JP3234091B2 (ja) | 1994-03-10 | 2001-12-04 | 株式会社日立製作所 | 表面処理装置 |
US5431700A (en) | 1994-03-30 | 1995-07-11 | Fsi International, Inc. | Vertical multi-process bake/chill apparatus |
JPH0845909A (ja) * | 1994-07-26 | 1996-02-16 | Sony Corp | 試料台 |
JPH08191059A (ja) * | 1995-01-09 | 1996-07-23 | Hitachi Ltd | プラズマ処理装置 |
JP3288200B2 (ja) | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
US6239038B1 (en) * | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US5846375A (en) | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
US5814365A (en) | 1997-08-15 | 1998-09-29 | Micro C Technologies, Inc. | Reactor and method of processing a semiconductor substate |
US6018616A (en) | 1998-02-23 | 2000-01-25 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
US6105274A (en) | 1999-03-18 | 2000-08-22 | International Business Machines Corporation | Cryogenic/phase change cooling for rapid thermal process systems |
US6100506A (en) * | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
-
2000
- 2000-03-17 US US09/527,873 patent/US7037797B1/en not_active Expired - Lifetime
-
2001
- 2001-03-15 DE DE60133092T patent/DE60133092T2/de not_active Expired - Lifetime
- 2001-03-15 WO PCT/IB2001/000392 patent/WO2001069656A2/en active IP Right Grant
- 2001-03-15 KR KR1020027012183A patent/KR100784580B1/ko active IP Right Grant
- 2001-03-15 EP EP01912062A patent/EP1264333B1/de not_active Expired - Lifetime
- 2001-03-15 AT AT01912062T patent/ATE388482T1/de not_active IP Right Cessation
- 2001-03-15 JP JP2001567023A patent/JP5511115B2/ja not_active Expired - Fee Related
- 2001-06-04 TW TW090106205A patent/TW495813B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2003526940A (ja) | 2003-09-09 |
US7037797B1 (en) | 2006-05-02 |
TW495813B (en) | 2002-07-21 |
WO2001069656A3 (en) | 2002-03-14 |
JP5511115B2 (ja) | 2014-06-04 |
KR20030007466A (ko) | 2003-01-23 |
DE60133092T2 (de) | 2009-02-19 |
EP1264333A2 (de) | 2002-12-11 |
WO2001069656A2 (en) | 2001-09-20 |
EP1264333B1 (de) | 2008-03-05 |
KR100784580B1 (ko) | 2007-12-10 |
DE60133092D1 (de) | 2008-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |