DE60133092D1 - Örtliche erwärmung und kühlung von substraten - Google Patents

Örtliche erwärmung und kühlung von substraten

Info

Publication number
DE60133092D1
DE60133092D1 DE60133092T DE60133092T DE60133092D1 DE 60133092 D1 DE60133092 D1 DE 60133092D1 DE 60133092 T DE60133092 T DE 60133092T DE 60133092 T DE60133092 T DE 60133092T DE 60133092 D1 DE60133092 D1 DE 60133092D1
Authority
DE
Germany
Prior art keywords
cooling
gas
wafer
substrates
local heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60133092T
Other languages
English (en)
Other versions
DE60133092T2 (de
Inventor
Andreas Tillman
Dieter Zernickel
Sohaila Shooshtarian
Narasimha Acharya
Mike Elbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Thermal Products Inc
Original Assignee
Mattson Thermal Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products Inc filed Critical Mattson Thermal Products Inc
Application granted granted Critical
Publication of DE60133092D1 publication Critical patent/DE60133092D1/de
Publication of DE60133092T2 publication Critical patent/DE60133092T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE60133092T 2000-03-17 2001-03-15 Örtliche erwärmung und kühlung von substraten Expired - Lifetime DE60133092T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/527,873 US7037797B1 (en) 2000-03-17 2000-03-17 Localized heating and cooling of substrates
US527873 2000-03-17
PCT/IB2001/000392 WO2001069656A2 (en) 2000-03-17 2001-03-15 Localized heating and cooling of substrates

Publications (2)

Publication Number Publication Date
DE60133092D1 true DE60133092D1 (de) 2008-04-17
DE60133092T2 DE60133092T2 (de) 2009-02-19

Family

ID=24103294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60133092T Expired - Lifetime DE60133092T2 (de) 2000-03-17 2001-03-15 Örtliche erwärmung und kühlung von substraten

Country Status (8)

Country Link
US (1) US7037797B1 (de)
EP (1) EP1264333B1 (de)
JP (1) JP5511115B2 (de)
KR (1) KR100784580B1 (de)
AT (1) ATE388482T1 (de)
DE (1) DE60133092T2 (de)
TW (1) TW495813B (de)
WO (1) WO2001069656A2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445202B1 (en) 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
WO2003052435A1 (en) 2001-08-21 2003-06-26 Cascade Microtech, Inc. Membrane probing system
JP2003307458A (ja) * 2002-04-15 2003-10-31 Akifumi Ito 基材の温度測定方法および温度測定装置
US7427329B2 (en) 2002-05-08 2008-09-23 Asm International N.V. Temperature control for single substrate semiconductor processing reactor
US6843201B2 (en) 2002-05-08 2005-01-18 Asm International Nv Temperature control for single substrate semiconductor processing reactor
FR2846786B1 (fr) 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
WO2004079804A1 (ja) * 2003-03-03 2004-09-16 Hitachi Kokusai Electric Inc. 基板処理装置および半導体装置の製造方法
JP3910151B2 (ja) * 2003-04-01 2007-04-25 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
TWI366234B (en) * 2004-06-30 2012-06-11 Intel Corp Method, apparatus and system to control temperature of a wafer edge or wafer edge support during heating, and machine-readable medium having data therein
US20060286807A1 (en) * 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
JP2008512680A (ja) 2004-09-13 2008-04-24 カスケード マイクロテック インコーポレイテッド 両面プロービング構造体
DE102005013831B4 (de) * 2005-03-24 2008-10-16 Siltronic Ag Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe
US7745762B2 (en) 2005-06-01 2010-06-29 Mattson Technology, Inc. Optimizing the thermal budget during a pulsed heating process
JP4870604B2 (ja) * 2007-03-29 2012-02-08 株式会社ニューフレアテクノロジー 気相成長装置
KR100870567B1 (ko) * 2007-06-27 2008-11-27 삼성전자주식회사 플라즈마를 이용한 이온 도핑 방법 및 플라즈마 이온 도핑장치
JP5456257B2 (ja) * 2008-01-08 2014-03-26 大日本スクリーン製造株式会社 熱処理装置
WO2010059247A2 (en) 2008-11-21 2010-05-27 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
US8490419B2 (en) * 2009-08-20 2013-07-23 United States Thermoelectric Consortium Interlocked jets cooling method and apparatus
US20110155058A1 (en) * 2009-12-18 2011-06-30 Applied Materials, Inc. Substrate processing apparatus having a radiant cavity
JP5982758B2 (ja) * 2011-02-23 2016-08-31 東京エレクトロン株式会社 マイクロ波照射装置
US20120225203A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
DE102012101923B4 (de) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens
DE102012205616B4 (de) * 2012-04-04 2016-07-14 Siltronic Ag Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
JP2016507763A (ja) * 2012-12-17 2016-03-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための基板サポート及びリソグラフィ装置
JPWO2014174803A1 (ja) * 2013-04-22 2017-02-23 株式会社Ｊｏｌｅｄ Ｅｌ表示装置の製造方法
US9511549B2 (en) 2014-06-02 2016-12-06 Toyota Motor Engineering & Manufacturing North America, Inc. Anisotropic thermal energy guiding shells and methods for fabricating thermal energy guiding shells
US10458962B2 (en) 2016-07-22 2019-10-29 Pulmostics Limited Temperature control for surface acoustic wave sensor
US11127607B2 (en) * 2019-11-11 2021-09-21 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Heat processing system
CN113234914B (zh) * 2021-04-16 2022-07-19 北京钢研高纳科技股份有限公司 基于加热气体精确控温的梯度热处理炉及热处理方法
JP7565252B2 (ja) 2021-08-26 2024-10-10 芝浦メカトロニクス株式会社 加熱処理装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
JPS62282437A (ja) * 1986-05-31 1987-12-08 Shinku Riko Kk 半導体ウエハ処理用急速加熱冷却装置
JPS63124528A (ja) * 1986-11-14 1988-05-28 Hitachi Ltd 半導体製造装置
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPS63291419A (ja) 1987-05-24 1988-11-29 Tatsumo Kk 加熱処理装置
US4836138A (en) 1987-06-18 1989-06-06 Epsilon Technology, Inc. Heating system for reaction chamber of chemical vapor deposition equipment
JPH0623935B2 (ja) * 1988-02-09 1994-03-30 大日本スクリーン製造株式会社 再現性を高めた熱処理制御方法
US4914276A (en) 1988-05-12 1990-04-03 Princeton Scientific Enterprises, Inc. Efficient high temperature radiant furnace
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
DE3915039A1 (de) * 1989-05-08 1990-11-15 Balzers Hochvakuum Hubtisch
EP0423327B1 (de) 1989-05-08 1994-03-30 Koninklijke Philips Electronics N.V. Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck
JPH02301173A (ja) 1989-05-16 1990-12-13 Tokin Corp 圧電磁器組成物
US5002010A (en) 1989-10-18 1991-03-26 Varian Associates, Inc. Vacuum vessel
JPH0693440B2 (ja) 1990-01-19 1994-11-16 ジー スクウェアード セミコンダクター コーポレイション 急速加熱装置及び方法
US5252366A (en) 1990-01-24 1993-10-12 The United States Of America As Represented By The Secretary Of The Air Force Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer
US5129360A (en) 1990-01-24 1992-07-14 The United States Of America As Represented By The Secretary Of The Air Force Actively cooled effusion cell for chemical vapor deposition
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
KR940011708B1 (ko) 1990-04-09 1994-12-23 니찌덴 아네루바 가부시끼가이샤 기판온도제어기구
JPH045822A (ja) 1990-04-23 1992-01-09 Sumitomo Electric Ind Ltd ランプアニール装置および方法
US5673750A (en) 1990-05-19 1997-10-07 Hitachi, Ltd. Vacuum processing method and apparatus
JPH04266015A (ja) * 1991-02-21 1992-09-22 Fuji Electric Co Ltd 水素化非晶質シリコン膜の作成方法
US5199483A (en) 1991-05-15 1993-04-06 Applied Materials, Inc. Method and apparatus for cooling wafers
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5449883A (en) 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
JP3380988B2 (ja) 1993-04-21 2003-02-24 東京エレクトロン株式会社 熱処理装置
CN1137296A (zh) 1993-12-17 1996-12-04 布鲁克斯自动化公司 加热或冷却晶片的设备
JP3234091B2 (ja) 1994-03-10 2001-12-04 株式会社日立製作所 表面処理装置
US5431700A (en) 1994-03-30 1995-07-11 Fsi International, Inc. Vertical multi-process bake/chill apparatus
JPH0845909A (ja) * 1994-07-26 1996-02-16 Sony Corp 試料台
JPH08191059A (ja) * 1995-01-09 1996-07-23 Hitachi Ltd プラズマ処理装置
JP3288200B2 (ja) 1995-06-09 2002-06-04 東京エレクトロン株式会社 真空処理装置
US6239038B1 (en) * 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
US5851929A (en) * 1996-01-04 1998-12-22 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6027244A (en) * 1997-07-24 2000-02-22 Steag Rtp Systems, Inc. Apparatus for determining the temperature of a semi-transparent radiating body
US5814365A (en) * 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6018616A (en) 1998-02-23 2000-01-25 Applied Materials, Inc. Thermal cycling module and process using radiant heat
US6105274A (en) 1999-03-18 2000-08-22 International Business Machines Corporation Cryogenic/phase change cooling for rapid thermal process systems
US6100506A (en) * 1999-07-26 2000-08-08 International Business Machines Corporation Hot plate with in situ surface temperature adjustment

Also Published As

Publication number Publication date
US7037797B1 (en) 2006-05-02
KR100784580B1 (ko) 2007-12-10
WO2001069656A3 (en) 2002-03-14
WO2001069656A2 (en) 2001-09-20
EP1264333A2 (de) 2002-12-11
DE60133092T2 (de) 2009-02-19
ATE388482T1 (de) 2008-03-15
JP2003526940A (ja) 2003-09-09
EP1264333B1 (de) 2008-03-05
TW495813B (en) 2002-07-21
KR20030007466A (ko) 2003-01-23
JP5511115B2 (ja) 2014-06-04

Similar Documents

Publication Publication Date Title
ATE388482T1 (de) Örtliche erwärmung und kühlung von substraten
HK1057130A1 (en) Methods and apparatus for thermally processing wafers.
WO2003081646A3 (en) System and method for heating and cooling wafer at accelerated rates
KR950020967A (ko) 플라즈마 처리장치 및 플라즈마 처리방법
ATE440376T1 (de) Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats
MY151676A (en) Substrate support having dynamic temperature control
WO2002056349A3 (en) Chamber for uniform substrate heating
KR940012515A (ko) 서셉터의 온도제어방법
WO2002071446A3 (en) Method and apparatus for active temperature control of susceptors
TW328631B (en) Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same
DE69801987D1 (de) Suszeptor ausführungen für siliziumkarbid-dünnschichten
KR100203780B1 (ko) 반도체 웨이퍼 열처리 장치
WO2004084280A3 (en) Processing system and method for treating a substrate
KR940004739A (ko) 기판 건조장치
KR960036140A (ko) 반도체 장치 제작 방법
TW291571B (en) Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device
WO2002093623A3 (en) Assembly comprising heat distributing plate and edge support
TW200514130A (en) Substrate processing apparatus and method for producing the semiconductor device
TW368699B (en) Manufacturing method for semiconductor device and manufacturing device for semiconductor
TW200636829A (en) Apparatus and method for thermal processing
KR960035866A (ko) 반도체장치의 제조방법 및 반도체장치의 제조장치
TW373251B (en) Arrangement for processing a substrate wafer and operating method thereof
JPS5588323A (en) Manufacture of semiconductor device
TWI255874B (en) Method for forming an epitaxial silicon wafer with a denuded zone
DE69608335D1 (de) Reaktionskammer mit quasi heisser Wandung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition