CN1137296A - 加热或冷却晶片的设备 - Google Patents

加热或冷却晶片的设备 Download PDF

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CN1137296A
CN1137296A CN94194497A CN94194497A CN1137296A CN 1137296 A CN1137296 A CN 1137296A CN 94194497 A CN94194497 A CN 94194497A CN 94194497 A CN94194497 A CN 94194497A CN 1137296 A CN1137296 A CN 1137296A
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plate
temperature
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R·A·亨德里克森
C·霍夫迈斯特
R·S·穆卡
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Azenta Inc
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Abstract

应用气体加载式热调整工艺，通过基片(20)以上的可调节的气体压力把基片(20)压贴于一块高热惯性温控板(22或106)而达到此板(22或106)的温度。除了基片(20)座放于其上的板(22或106)之外，没有其他机械接触，也没有过热或过冷的危险。

Description

加热或冷却晶片的设备
                   发明背景
1.发明领域
本发明的设备一般涉及处理各种基片，诸如半导体晶片或用于平面显示器的玻璃板，特别是在各处理工序于真空中进行期间加热和冷却这类基片。
2.先有技术描述
用于在高度真空下从事处理期间加热或冷却半导体晶片的方法和设备据知有多种多样。比如，King的美国专利第4261762号披露了一种方法和设备，采用在物件与支承件之间提供一种压力大约为0.5至2.0托(Torr)的气体的办法在于真空中正受处理的物件与支承件之间形成热传导。Lamont，Jr.的美国专利第4680061号披露了一种类似的方法和设备。一种稍有不同的用于热处理和冷却半导体材料的设备披露在Chizinsky的美国专利第5060354号之中。用辐射加热晶片，诸如出自灯具的辐射，也是为人所知的。在加热或冷却过程期间，采用与晶片的机械接触的先前技术中的设备，诸如一些夹板，遇到某些困难。比如，任何这种机械接触都会导致颗粒生成和造成局部应力，以及潜在的裂纹。灯具会使晶片过热。
                      发明概要
本发明包括气体加载式热调整工艺的应用，其中使晶片的温度通过晶片上面的可调节的气体压力把晶片压贴于一块高热惯性温控板而趋近此板的温度。除了晶片座放在其上的板面之外，与晶片没有其他机械接触，也没有过热或过冷的危险。处理过程简易、洁净、可编程、利用仪表显示，而且安全。其次，诸如水气和晶片产生的各种挥发物这样的气体都由加压气流以较低速率，诸如每5秒钟交换几百cm2气体体积的速率(不足以对流传热)，不带扰动地予以清除。
处理过程是可编程的，由于热率基于压力和压差，以致可以采用诸如气体流量计这样的仪器与压力变换器相结合以形成质流控制器。除了晶片以上的气流以外，在晶片与板之间经常抽空，以致绝对压力低而压差高。气体载荷由于压差作用面积相对较大而提供了巨大力量。
                  附图的简要说明
本发明从以下其各项优先实施例的详细说明中，并参照附图，可以得到最好的了解，附图中：
图1是接触式热传导设备的铅直剖面视图；以及
图2是类似于图1的视图，但更重细节。
                   发明的详细描述
现在参见附图，首先是图1，其中所示装置可以在真空环境中加热或冷却半导体晶片或基片或其他类似器件。它的特色在于一真空室(连同相关的真空和通风控制系统)、一加热或冷却至选定温度的热力板、一部向安放在热力板上的晶片背面施加真空的装置，以及一部在受控流率或压力下向腔室输进诸如氩气等惰性气体的装置。它还具有一抽空惰性气体或任何其他的在调整和使腔室回返至高度真空期间可能从晶片产生的气体的装置。在正常使用时，此模块往往安装在保持于高度真空状态中的较大的真空室里面。
这种热调整模块的一项重要的新颖特点是，在真空环境中有能力为达到某一选定温度提供闭环控制的、按照确定型式的加热或冷却。加热或冷却速率由氩气或其他惰性气体紧压晶片顶面的压力与施加于晶片底部的真空之间的压差来控制。这种压差处于闭环控制之下，在晶片与加热/冷却板之间建立了良好的热接触。压差越大，热接触越好，因而晶片温度方面的变化越快。晶片达到的最终温度是由热力板选定温度决定的，它也处于闭环控制之下。
另一重要特点是其环境隔绝性。此模块的真空室只在高度真空状态重新建立起来的时候才开启，这样可防止在热调整期间发生任何气体逸入周围真空环境的情况。
此模块在加热模式下的一种典型用途是用于晶片脱气(degassing)。在此种用途的正常操作下，晶片以一种由顶面压力控制的速率达到目标温度，然后模块腔室则抽空到高度真空。在缺乏由顶面压力提供的良好热力途径时，晶片温度会仍然非常接近热力板的温度，会继续保持于目标温度。换言之，正如晶片与热力板之间良好的机械接触可造成良好的热传导性那样，缺乏任何这种机械接触而只出现缓慢流动的气体可造成晶片之上不良的热力途径。正在脱气的晶片要在模块真空室内维持足够长的一段时间，以确保大多数气体已经由模块真空泵予以排除。此时，模块室才可以开启，用于晶片传送，而不致把不需要的气体引入周围的高度真空环境。
本发明的第三个重要特点是，本发明的模块性质可使多部模块组成在一个较大的真空环境之中。一种这类组成是各部模块上下叠置地安装而成的，其方式是，在交替的时刻上开启时，它们会把晶片提供到同一传送平面。这样会允许两个晶片接受调整并且随后在不同时间从同一晶片传送平面被异步地予以存取。存取晶片的能力还允许在另一晶片正在被调整的同时一个晶片的热调整可以继续进行。与单一腔室相比，这就有效地加倍了每小时可以调整的晶片数量。
参见图1，真空室1包括一上壁2，具有一上孔眼3，以及一下壁4，具有一下孔眼5，对置地与上孔眼3对齐。每一所述孔眼3、5容放一个模块，用于沿铅直方向在晶片传送平面与加热或冷却位置(加热位置被画出)之间推动温控板(上)或晶片支承板(下)。上模块6装在上孔眼3之中，并且包括一个上提升杠7，两个上提升杆8、9，以及分别用于真空、电力、H2O和氩气的各个上导管10、11、12、27。两个上提升杆由上气动缸体13使之升高和下降，致使上提升杠移动经过如在14处所示的一行程距离。上真空密封件15、16是为上提升杆和上导管设置的，它们相对于其作直线运动。
最初，为进行晶片交换，上提升杠7处于下部位置，如虚线17所示，以致上晶片台架22(包括上冷却板或上脱气板)也处于下部位置，此下部位置低于晶片传送平面19。晶片20由机器人端部执行器21在晶片传送平面19内推至上晶片台架22以上的位置，以致上晶片台架22能够托住晶片20。机器人端部执行器21随后缩回，而上提升杠7提高至上部位置，如实线所示，以致上晶片台架22也处于上(或加热/冷却)位置。
下模块106类似于上模块。下模块装在下孔眼5里面，并包括一下提升杠107、两个下提升杆108、109，和分别用于真空、电力、H2O和氩气的下导管110、111、112和127。下提升杆108、109由一下气动缸体113使之上升和下降，以致下提升杠107移动经过如在114处所示的一行程距离。下真空密封件115、116是为下提升杆和下导管设置的，它们相对于其作直线运动。
对于上模块，上孔眼3依靠移动构成一提升阀的晶片台架板22而开启和关闭。操作顺序如下：
首先，装放晶片，在高度真空下关闭提升阀。装放晶片的步骤包括通过晶片传送平面中一适当槽孔送入晶片20，并通过行程距离将其升(或降)至操作位置。一旦处于操作位置，晶片就支承在晶片台架板22上，它装有温控装置(诸如加热器或水冷器)。冷却板的温度由在一受控温度下穿过它流通的水来控制。晶片台架板22与晶片20之间的空隙由一真空管线26抽空。晶片以上的空间连通于氩气管线27。
第二，在底面作真空泵抽的同时，在晶片顶面上以氩气再充。
第三，晶片加热或冷却。
第四，抽空氩气。
第五，开启提升阀并卸下晶片。
对于脱气操作，要使用加热器。对于冷却，取消加热器，使用水冷。
参照图1和2可以更为清楚地看出操作顺序。参照时可见，真空室1的真空密合性的确保依靠的是，结合上提升杆8、9的移动采用上波形密封管15、16，以及结合下提升杆108、109的移动采用下波形密封管115、116。在图1中，上模块6可以是一冷却模块，而下模块106可以是一脱气模块。因而，上板22是一冷却板，包括一冷却水腔室。板22的上表面具有一些槽沟26，在其中保持真空，以致晶片20被吸向板22。在“上”位置上，此板推压提升阀22中的一O型密封圈36，这样构成了在压力下送入氩气的腔室37，以致晶片20被推而紧贴板22。如图2中可见，在冷却板22处于“下”位置时，晶片20可以由机器人端部执行器21安放在它上面，以致晶片座放在弹簧件38上。在冷却板22被向上推移到“上”位置时，它推压构件6，使弹簧件38屈服并使晶片20与冷却板22相接触。
在图1中，下板106是一加热板，包括一系列加热灯具134。板106的上表面具有类似于26的一些槽沟，其中保持真空，以致晶片20被拉向板106。在“下”位置上，下托架122推压板106中类似于36的O形密封圈，这样构成了类似于37的在压力下送入氩气的腔室，以致晶片20被推而紧贴板106。如图2中可见，在下托架122处于“上”位置时，晶片20可以由机器人端部执行器21安放在装于下托架122下面的支架138上面，以致它座放在所述支架138上。在下托架122下降到“下”位置时，晶片20就座放在加热板106上面，以致支架138的下降稍微多于晶片20，而晶片20此时则座放在加热板106上并不再在支架138上。
在如此说明了本发明的各项原理连同其各项例证性实施例之后，应当理解，尽管采用了一些具体用词，但它们总是在一般的和叙述性意义上使用的，目的并不在于作出限制，而本发明的范围则阐述在以下各项权利要求之中。

Claims (4)

1.一种设备，用于使器件的温度趋近于高热惯性温控板的温度，包括与所述板相结合的气体载荷，适于推压所述器件紧贴所述板，以及用于调节所述气体载荷的压力的装置。
2.一种方法，用于使器件的温度趋近于高热惯性温控板的温度，包括以下各步骤：通过向器件施加气体载荷推压所述器件紧贴所述板，以及调节所述气体载荷的压力。
3.按照权利要求1所述的设备，用于把晶片的温度改变到一选定的温度，总合包括：
真空室，
高热惯性温控板，装在所述真空室里面，所述热力板具有一上表面，适于接受所述晶片，所述上表面上面具有一些槽沟，
用于把所述晶片安放在所述上表面上的装置，
用于把所述热力板加热或冷却到所选定温度的装置，
用于抽空所述各槽沟的装置，
用于在所述热力板与托架之间造成相对运动、以致它们彼此趋近并压紧其间真空密合密封件以便在所述板与所述托架之间形成气压室的装置，以及
用于在一受控的流率或压力下把惰性气体输进所述气压室，以便所述气体压力推压所述晶片紧贴所述板以便进行所述晶片的热调整作业的装置。
4.按照权利要求2所述的一种方法，把晶片的温度改变到一选定的温度，包括以下各个步骤：
保持高热惯性温控板在所述选定温度上，所述热力板具有一上表面，适于接受所述晶片，所述上表面上具有一些槽沟，
安放所述晶片在所述上表面上，
抽空所述各槽沟，
造成所述热力板与托架之间的相对运动，以致它们彼此趋近并紧压其间的真空密合密封件以便在所述板与所述托架之间形成气压室，以及
以受控的流率和压力把惰性气体输进所述气压室，以使所述气体压力推压所述晶片紧贴所述板以便进行所述晶片的热调整作业。
CN94194497A 1993-12-17 1994-12-15 加热或冷却晶片的设备 Pending CN1137296A (zh)

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EP0733130A4 (en) 1997-04-02
EP0733130A1 (en) 1996-09-25
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