KR960706571A - 웨이퍼 가열 장치 또는 냉각 장치(apparatus for heating or cooling wafers) - Google Patents

웨이퍼 가열 장치 또는 냉각 장치(apparatus for heating or cooling wafers)

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Publication number
KR960706571A
KR960706571A KR1019960703093A KR19960703093A KR960706571A KR 960706571 A KR960706571 A KR 960706571A KR 1019960703093 A KR1019960703093 A KR 1019960703093A KR 19960703093 A KR19960703093 A KR 19960703093A KR 960706571 A KR960706571 A KR 960706571A
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KR
South Korea
Prior art keywords
temperature
plate
wafer
mount
gas
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KR1019960703093A
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English (en)
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KR100356438B1 (ko
Inventor
루스 앤 헨드릭슨
크리스토퍼 호프마이스터
리차드 에스. 무카
Original Assignee
스탠리 디. 피코스
부룩스 오토메이션, 인코포레이션
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Publication of KR960706571A publication Critical patent/KR960706571A/ko
Application granted granted Critical
Publication of KR100356438B1 publication Critical patent/KR100356438B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

가스 로드(gas-loaded)에 의한 열 조절이 사용되어서 기판(20)상의 조절 가능한 가스의 압력에 의해 기판(20)의 온도를 고열 관성 온도 조절되는 플레이트(22 또는 106)의 온도에 근접되도록 하여, 플레이트(22 또는 106)에 대하여 기판(20)을 압압한다. 기판(20)이 놓여지는 플레이트(22 또는 106)와의 접촉을 제외하고는 기판(20)과의 어떠한 기계적인 접촉이 없고 과열 또는 과냉각 등의 위험도 없다.

Description

웨이퍼 가열 장치 또는 냉각 장치(APPARATUS FOR HEATING OR COOLING WAFERS)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 접촉에 의해 열전달하는 장치의 수직 단면도이다.

Claims (4)

  1. 물체의 온도를 고열 관성 온도 조절되는 플레이트의 온도에 근접하도록 조절하는 장치에 있어서, 상기 플레이트에 대하여 상기 물체를 압압하기에 적합하게 된 가스 로드와 상기 가스 로드의 압력을 조절하는 수단을 상기 프레이트와 더불어 구비하는 것을 특징으로 하는 물체 온도 조절 장치.
  2. 물체의 온도를 고열 관성 온도 조절되는 플레이트의 온도에 근접하도록 하는 조절하는 방법에 있어서, 가스 로드를 가함으로써 상기 물체를 상기 플레이트에 압압하는 단계와 상기 가스 로드의 압력을 조절하는 단계를 구비하는 것을 특징으로 하는 물체 온도 조절 방법.
  3. 웨이퍼의 온도를 선택된 온도까지 변화시키기 위한 제1항에 따른 물체 온도 조절 장치에 있어서, 진공 챔버; 상기 웨이퍼를 수용하기에 적합한 상부 표면을 구비하고 이 상부 표면은 자체에 채널을 구비하는 상기 진공 챔버안에 설치된 고열 관성온도 조절되는 플레이트; 상기 웨이퍼를 상기 상부 표면 위치시키는 수단; 상기 열 프레이트를 선택된 온도로 가열 또는 냉각시키는 수단; 상기 채널을 진공하는 수단; 상기 열 플레이트와 마운트 사이의 상대적인 운동을 일으켜서 상기 열 플레이트와 마운트가 서로 근접하여 상기 열 플레이트와 마운트 사이의 고진공 밀폐에 대하여 압박하도록 하여 상기 플레이트와 마운트 사이에 가스 압력 챔버를 형성하기 위한 수단; 및 상기 가스 압력 챔버내로 조절된 유속 또는 압력으로 불활성 가스를 주입하는 주입수단을 구비하고 있어서, 상기 웨이퍼의 열 조절을 위해서 상기 가스 압력이 상기 웨이퍼를 상기 플레이트에 대하여 압압하는 것을 특징으로 하는 물체 온도 조절 장치.
  4. 웨이퍼의 온도를 선택된 온도까지 변화시키기 위한 제2항에 따른 물체 온도 조절 방법에 있어서, 상기 웨이퍼를 수용하기에 적합하게 된 상부 표면을 구비하고, 이 상부 표면은 자체적으로 채널을 구비하는, 고열 관성 온도 조절되는 플레이트를 선택된 온도로 유지하는 단계; 상기 웨이퍼를 상기 상부 표면에 위치시키는 단계; 상기 채널을 진공상태로 하는 단계; 상기 열 플레이트와 마운트 사이의 상대적인 운동을 일으켜서 상기 열 플레이트와 마운트가 서로 근접하여 상기 열 플레이트와 마운트 사이의 고진공 밀폐에 대하여 압박하도록 하여서 상기 플레이트와 마운트 사이에 가스 압력 챔버를 형성하는 단계; 및 상기 가스 압력 챔버내로 조절된 유속 또는 압력으로 불활성 가스를 주입하는 단계를 구비하고 있어서, 상기 웨이퍼의 열 조절을 위해서 상기 가스 압력이 상기 웨이퍼를 상기 플레이트에 대하여 압압하는 것을 특징으로 하는 물체 온도 조절 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960703093A 1993-12-17 1994-12-15 웨이퍼가열장치또는냉각장치 KR100356438B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16943293A 1993-12-17 1993-12-17
US08/169,432 1993-12-17
PCT/US1994/014399 WO1995016800A1 (en) 1993-12-17 1994-12-15 Apparatus for heating or cooling wafers

Publications (2)

Publication Number Publication Date
KR960706571A true KR960706571A (ko) 1996-12-09
KR100356438B1 KR100356438B1 (ko) 2002-12-12

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Country Status (6)

Country Link
US (1) US5778968A (ko)
EP (1) EP0733130A4 (ko)
JP (1) JPH09506744A (ko)
KR (1) KR100356438B1 (ko)
CN (1) CN1137296A (ko)
WO (1) WO1995016800A1 (ko)

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Also Published As

Publication number Publication date
JPH09506744A (ja) 1997-06-30
EP0733130A1 (en) 1996-09-25
CN1137296A (zh) 1996-12-04
EP0733130A4 (en) 1997-04-02
KR100356438B1 (ko) 2002-12-12
WO1995016800A1 (en) 1995-06-22
US5778968A (en) 1998-07-14

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