ATE440376T1 - Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats - Google Patents
Verarbeitungssystem und verfahren zum thermischen behandeln eines substratsInfo
- Publication number
- ATE440376T1 ATE440376T1 AT04757456T AT04757456T ATE440376T1 AT E440376 T1 ATE440376 T1 AT E440376T1 AT 04757456 T AT04757456 T AT 04757456T AT 04757456 T AT04757456 T AT 04757456T AT E440376 T1 ATE440376 T1 AT E440376T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- processing system
- thermally treating
- thermal treatment
- thermally
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45464103P | 2003-03-17 | 2003-03-17 | |
| PCT/US2004/007866 WO2004082821A2 (en) | 2003-03-17 | 2004-03-16 | Processing system and method for thermally treating a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE440376T1 true ATE440376T1 (de) | 2009-09-15 |
Family
ID=33029906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04757456T ATE440376T1 (de) | 2003-03-17 | 2004-03-16 | Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7079760B2 (de) |
| EP (1) | EP1604389B1 (de) |
| JP (1) | JP4745958B2 (de) |
| AT (1) | ATE440376T1 (de) |
| DE (1) | DE602004022641D1 (de) |
| TW (1) | TWI242795B (de) |
| WO (1) | WO2004082821A2 (de) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004075567A (ja) * | 2002-08-12 | 2004-03-11 | Idemitsu Kosan Co Ltd | オリゴアリーレン誘導体及びそれを利用した有機エレクトロルミネッセンス素子 |
| US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
| US7877161B2 (en) | 2003-03-17 | 2011-01-25 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
| US7780791B2 (en) * | 2004-06-30 | 2010-08-24 | Lam Research Corporation | Apparatus for an optimized plasma chamber top piece |
| US8540843B2 (en) | 2004-06-30 | 2013-09-24 | Lam Research Corporation | Plasma chamber top piece assembly |
| US20060000551A1 (en) * | 2004-06-30 | 2006-01-05 | Saldana Miguel A | Methods and apparatus for optimal temperature control in a plasma processing system |
| JP4460418B2 (ja) * | 2004-10-13 | 2010-05-12 | 東京エレクトロン株式会社 | シールド体および真空処理装置 |
| US8529738B2 (en) * | 2005-02-08 | 2013-09-10 | The Trustees Of Columbia University In The City Of New York | In situ plating and etching of materials covered with a surface film |
| US8496799B2 (en) * | 2005-02-08 | 2013-07-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
| US7510972B2 (en) * | 2005-02-14 | 2009-03-31 | Tokyo Electron Limited | Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device |
| JP4860219B2 (ja) * | 2005-02-14 | 2012-01-25 | 東京エレクトロン株式会社 | 基板の処理方法、電子デバイスの製造方法及びプログラム |
| US7622392B2 (en) * | 2005-02-18 | 2009-11-24 | Tokyo Electron Limited | Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methods |
| US20060196527A1 (en) * | 2005-02-23 | 2006-09-07 | Tokyo Electron Limited | Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods |
| JP2008537782A (ja) * | 2005-04-08 | 2008-09-25 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | めっき浴およびエッチング浴を監視する方法 |
| WO2007027907A2 (en) * | 2005-09-02 | 2007-03-08 | The Trustees Of Columbia University In The City Of New York | A system and method for obtaining anisotropic etching of patterned substrates |
| WO2007072708A1 (ja) * | 2005-12-22 | 2007-06-28 | Tokyo Electron Limited | 基板処理装置 |
| US7631898B2 (en) * | 2006-01-25 | 2009-12-15 | Chrysler Group Llc | Power release and locking adjustable steering column apparatus and method |
| US8343280B2 (en) | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
| JP4654153B2 (ja) | 2006-04-13 | 2011-03-16 | 信越化学工業株式会社 | 加熱素子 |
| US7718032B2 (en) | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
| US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
| US20080045030A1 (en) * | 2006-08-15 | 2008-02-21 | Shigeru Tahara | Substrate processing method, substrate processing system and storage medium |
| JP5100057B2 (ja) * | 2006-08-18 | 2012-12-19 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP5185948B2 (ja) * | 2006-12-06 | 2013-04-17 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | メッキ及びエッチング浴組成をスクリーニングするマイクロ流体システム及び方法 |
| JP5084250B2 (ja) * | 2006-12-26 | 2012-11-28 | 東京エレクトロン株式会社 | ガス処理装置およびガス処理方法ならびに記憶媒体 |
| US20080217293A1 (en) * | 2007-03-06 | 2008-09-11 | Tokyo Electron Limited | Processing system and method for performing high throughput non-plasma processing |
| US7977249B1 (en) | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
| US8083862B2 (en) * | 2007-03-09 | 2011-12-27 | Tokyo Electron Limited | Method and system for monitoring contamination on a substrate |
| US20080228308A1 (en) * | 2007-03-13 | 2008-09-18 | Tokyo Electron Limited | Critical dimension uniformity optimization |
| JP4949091B2 (ja) * | 2007-03-16 | 2012-06-06 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記録媒体 |
| JP2008235315A (ja) * | 2007-03-16 | 2008-10-02 | Tokyo Electron Ltd | 基板処理装置、基板処理方法および記録媒体 |
| JP2008235309A (ja) * | 2007-03-16 | 2008-10-02 | Tokyo Electron Ltd | 基板処理装置、基板処理方法および記録媒体 |
| JP2008244224A (ja) * | 2007-03-28 | 2008-10-09 | Sumitomo Precision Prod Co Ltd | プラズマ処理装置 |
| JP4625828B2 (ja) * | 2007-06-05 | 2011-02-02 | リンテック株式会社 | 半導体チップ接着装置及び接着方法 |
| JP5069982B2 (ja) * | 2007-09-06 | 2012-11-07 | 東京エレクトロン株式会社 | 半導体装置の製造方法および半導体装置 |
| WO2009051923A1 (en) * | 2007-10-17 | 2009-04-23 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
| US8187486B1 (en) | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
| JP5374039B2 (ja) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
| US20090212014A1 (en) * | 2008-02-27 | 2009-08-27 | Tokyo Electron Limited | Method and system for performing multiple treatments in a dual-chamber batch processing system |
| US8303715B2 (en) * | 2008-07-31 | 2012-11-06 | Tokyo Electron Limited | High throughput thermal treatment system and method of operating |
| US8303716B2 (en) | 2008-07-31 | 2012-11-06 | Tokyo Electron Limited | High throughput processing system for chemical treatment and thermal treatment and method of operating |
| US8115140B2 (en) * | 2008-07-31 | 2012-02-14 | Tokyo Electron Limited | Heater assembly for high throughput chemical treatment system |
| US8287688B2 (en) | 2008-07-31 | 2012-10-16 | Tokyo Electron Limited | Substrate support for high throughput chemical treatment system |
| US8323410B2 (en) * | 2008-07-31 | 2012-12-04 | Tokyo Electron Limited | High throughput chemical treatment system and method of operating |
| US7981763B1 (en) | 2008-08-15 | 2011-07-19 | Novellus Systems, Inc. | Atomic layer removal for high aspect ratio gapfill |
| US8058179B1 (en) | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
| US8985050B2 (en) * | 2009-11-05 | 2015-03-24 | The Trustees Of Columbia University In The City Of New York | Substrate laser oxide removal process followed by electro or immersion plating |
| KR20160118387A (ko) * | 2010-08-03 | 2016-10-11 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 장치 |
| US8932690B2 (en) * | 2011-11-30 | 2015-01-13 | Component Re-Engineering Company, Inc. | Plate and shaft device |
| US9556074B2 (en) * | 2011-11-30 | 2017-01-31 | Component Re-Engineering Company, Inc. | Method for manufacture of a multi-layer plate device |
| US9321087B2 (en) | 2013-09-10 | 2016-04-26 | TFL FSI, Inc. | Apparatus and method for scanning an object through a fluid spray |
| US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
| US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
| JP2017212328A (ja) * | 2016-05-25 | 2017-11-30 | 京セラ株式会社 | セラミック流路部材 |
| US10224224B2 (en) * | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10763141B2 (en) * | 2017-03-17 | 2020-09-01 | Applied Materials, Inc. | Non-contact temperature calibration tool for a substrate support and method of using the same |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| CN111095524B (zh) | 2017-09-12 | 2023-10-03 | 应用材料公司 | 用于使用保护阻挡物层制造半导体结构的设备和方法 |
| EP4321649B1 (de) | 2017-11-11 | 2025-08-20 | Micromaterials LLC | Gaszufuhrsystem für hochdruckverarbeitungskammer |
| CN111432920A (zh) | 2017-11-17 | 2020-07-17 | 应用材料公司 | 用于高压处理系统的冷凝器系统 |
| KR102536820B1 (ko) | 2018-03-09 | 2023-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| WO2019226341A1 (en) | 2018-05-25 | 2019-11-28 | Lam Research Corporation | Thermal atomic layer etch with rapid temperature cycling |
| US11637022B2 (en) | 2018-07-09 | 2023-04-25 | Lam Research Corporation | Electron excitation atomic layer etch |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US12280091B2 (en) | 2021-02-03 | 2025-04-22 | Lam Research Corporation | Etch selectivity control in atomic layer etching |
| JP7492928B2 (ja) * | 2021-02-10 | 2024-05-30 | 東京エレクトロン株式会社 | 基板支持器、プラズマ処理システム及びプラズマエッチング方法 |
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| US5282925A (en) | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| JPH0722500A (ja) * | 1993-06-29 | 1995-01-24 | Tokyo Electron Ltd | 処理装置 |
| US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| JPH0969525A (ja) * | 1995-08-31 | 1997-03-11 | Mitsubishi Electric Corp | 金属配線の処理方法 |
| US6616767B2 (en) * | 1997-02-12 | 2003-09-09 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability |
| US5838055A (en) | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
| US6074951A (en) | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
| US5876879A (en) | 1997-05-29 | 1999-03-02 | International Business Machines Corporation | Oxide layer patterned by vapor phase etching |
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| JP2002009064A (ja) * | 2000-06-21 | 2002-01-11 | Hitachi Ltd | 試料の処理装置及び試料の処理方法 |
| JP2002025912A (ja) * | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用サセプタとそれを用いた半導体製造装置 |
| US6926843B2 (en) | 2000-11-30 | 2005-08-09 | International Business Machines Corporation | Etching of hard masks |
| JP4945031B2 (ja) * | 2001-05-02 | 2012-06-06 | アプライド マテリアルズ インコーポレイテッド | 基板加熱装置および半導体製造装置 |
| JP2003068726A (ja) * | 2001-08-23 | 2003-03-07 | Tokyo Electron Ltd | 冷却機能を備えた加熱処理装置 |
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-
2003
- 2003-11-12 US US10/704,969 patent/US7079760B2/en not_active Expired - Lifetime
-
2004
- 2004-03-16 EP EP04757456A patent/EP1604389B1/de not_active Expired - Lifetime
- 2004-03-16 AT AT04757456T patent/ATE440376T1/de not_active IP Right Cessation
- 2004-03-16 WO PCT/US2004/007866 patent/WO2004082821A2/en not_active Ceased
- 2004-03-16 DE DE602004022641T patent/DE602004022641D1/de not_active Expired - Lifetime
- 2004-03-16 JP JP2006507205A patent/JP4745958B2/ja not_active Expired - Lifetime
- 2004-03-17 TW TW093107047A patent/TWI242795B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004082821A2 (en) | 2004-09-30 |
| EP1604389B1 (de) | 2009-08-19 |
| EP1604389A2 (de) | 2005-12-14 |
| JP2006525668A (ja) | 2006-11-09 |
| US20040184792A1 (en) | 2004-09-23 |
| WO2004082821A3 (en) | 2004-11-04 |
| US7079760B2 (en) | 2006-07-18 |
| DE602004022641D1 (de) | 2009-10-01 |
| TW200425240A (en) | 2004-11-16 |
| JP4745958B2 (ja) | 2011-08-10 |
| TWI242795B (en) | 2005-11-01 |
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