JP5069982B2 - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP5069982B2 JP5069982B2 JP2007231408A JP2007231408A JP5069982B2 JP 5069982 B2 JP5069982 B2 JP 5069982B2 JP 2007231408 A JP2007231408 A JP 2007231408A JP 2007231408 A JP2007231408 A JP 2007231408A JP 5069982 B2 JP5069982 B2 JP 5069982B2
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- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000012545 processing Methods 0.000 claims description 113
- 239000000758 substrate Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 67
- 239000007789 gas Substances 0.000 claims description 56
- 238000002955 isolation Methods 0.000 claims description 45
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 29
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 27
- 239000007795 chemical reaction product Substances 0.000 claims description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 25
- 229920001709 polysilazane Polymers 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 230000001131 transforming effect Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 2
- 230000004075 alteration Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 51
- 239000010410 layer Substances 0.000 description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- 238000005530 etching Methods 0.000 description 19
- 238000012546 transfer Methods 0.000 description 18
- 238000011068 loading method Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910001873 dinitrogen Inorganic materials 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 16
- 238000001039 wet etching Methods 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- -1 ammonium fluorosilicate Chemical compound 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Description
glass)法や、オゾンTEOS(tetra ethyl ortho silicate)法、USG(undoped silicate glass)法、HDP(high density plasma enhanced chemical vapor deposition)法等により成膜されたSiO2膜が用いられている。
Etching; RIE)を採用することを試みた。反応性イオンエッチングは、イオンによるスパッタリングと、エッチングガスの化学反応を利用したエッチング技術であり、微細加工に適し、異方性エッチングも可能である。反応性イオンエッチングを利用することにより、溝部15の底部に第1の絶縁部32を残した状態で、溝部15の上部からSiO2膜31を除去することが可能となる。
1 半導体装置
13 素子分離構造
15 溝部
16 第1の絶縁部
17 第2の絶縁部
30 シリコン窒化膜
32a 残留層
34 第2の絶縁部
32b 反応生成物
100 処理システム
101 搬入出部
102 ロードロック室102
103 PHT処理装置
104 COR処理装置
105 制御コンピュータ
Claims (5)
- トランジスタ間を分離する素子分離構造を有する半導体装置の製造方法であって、
前記素子分離構造を形成する工程は、基板に形成された溝部の底部に第1の絶縁部を埋め込む工程と、前記第1の絶縁部の上に第2の絶縁部を埋め込む工程を有し、
前記第1の絶縁部を埋め込む工程は、前記第1の絶縁部の材料を基板の表面に成膜する工程と、前記溝部の上部から前記第1の絶縁部の材料を除去する工程と、前記溝部の上部において、前記溝部の内壁に付着していた前記第1の絶縁部の材料の残留層を除去する工程を有し、
前記成膜する工程は、ポリシラザン溶液を基板の表面に塗布する工程と、熱処理により、ポリシラザン溶液をSiO 2 に変質させる工程を有し、
前記第1の絶縁部の材料を除去する工程は、反応性イオンエッチングにより行われ、
前記残留層を除去する工程は、フッ化水素ガスおよびアンモニアガスにより、前記残留層を反応生成物に変質させる工程と、前記反応生成物を加熱して除去する工程を有することを特徴とする、半導体装置の製造方法。 - 前記残留層を反応生成物に変質させる工程において、温度またはフッ化水素ガスおよびアンモニアガスの混合比が調節されることを特徴とする、請求項1に記載の半導体装置の製造方法。
- 前記第2の絶縁部を埋め込む工程は、プラズマCVDによって行われることを特徴とする、請求項1または2に記載の半導体装置の製造方法。
- トランジスタ間を分離する素子分離構造を有する半導体装置であって、
請求項1〜3のいずれかの製造方法によって製造されたことを特徴とする、半導体装置。 - 処理システムの制御コンピュータによって実行することが可能なプログラムが記録された記録媒体であって、
前記プログラムは、前記制御コンピュータによって実行されることにより、前記処理システムに、請求項1〜3のいずれかに記載の製造方法を行わせるものであることを特徴とする、記録媒体。
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JP5069982B2 true JP5069982B2 (ja) | 2012-11-07 |
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US10170354B2 (en) * | 2015-04-12 | 2019-01-01 | Tokyo Electron Limited | Subtractive methods for creating dielectric isolation structures within open features |
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US5766971A (en) * | 1996-12-13 | 1998-06-16 | International Business Machines Corporation | Oxide strip that improves planarity |
US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US7079760B2 (en) * | 2003-03-17 | 2006-07-18 | Tokyo Electron Limited | Processing system and method for thermally treating a substrate |
JP2006156471A (ja) * | 2004-11-25 | 2006-06-15 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP4852275B2 (ja) * | 2005-08-10 | 2012-01-11 | セイコーエプソン株式会社 | 半導体基板の製造方法及び、半導体装置の製造方法 |
JP2007142155A (ja) * | 2005-11-18 | 2007-06-07 | Sony Corp | 酸化処理方法および半導体装置の製造方法 |
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