WO2007072708A1 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- WO2007072708A1 WO2007072708A1 PCT/JP2006/324747 JP2006324747W WO2007072708A1 WO 2007072708 A1 WO2007072708 A1 WO 2007072708A1 JP 2006324747 W JP2006324747 W JP 2006324747W WO 2007072708 A1 WO2007072708 A1 WO 2007072708A1
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- Prior art keywords
- chamber
- hydrogen fluoride
- processing
- wafer
- gas
- Prior art date
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- 238000012545 processing Methods 0.000 title claims abstract description 198
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 101
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 101
- 239000007789 gas Substances 0.000 claims abstract description 89
- 238000010301 surface-oxidation reaction Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 22
- 238000011068 loading method Methods 0.000 claims description 21
- 239000007795 chemical reaction product Substances 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 230000003746 surface roughness Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 101
- 239000010410 layer Substances 0.000 description 61
- 238000012360 testing method Methods 0.000 description 33
- 238000012546 transfer Methods 0.000 description 33
- 238000005530 etching Methods 0.000 description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 238000002474 experimental method Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 229910001873 dinitrogen Inorganic materials 0.000 description 15
- 238000001179 sorption measurement Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 12
- 239000007787 solid Substances 0.000 description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229930014626 natural product Natural products 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 ammonium fluorosilicate Chemical compound 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
Definitions
- the present invention relates to a substrate processing apparatus.
- a process for removing an oxide film (diacid silicon (SiO 2)) existing on the surface of a semiconductor wafer (hereinafter referred to as “wafer”) is known.
- reaction product After being transformed into a reaction product, the reaction product is removed from the wafer by heating and vaporizing (sublimation).
- a chamber of a substrate processing apparatus that performs such processing is formed of A1 (aluminum), and the inner surface of the chamber is subjected to surface oxidation treatment. That is, the surface of the chamber is forcibly oxidized to form an acid coating (aluminum (Al 2 O 3) coating (
- Anodized aluminum is formed, and the inner surface of the chamber is covered with an oxide film to improve the hardness, corrosion resistance and durability of the inner surface, and to protect the A1 that constitutes the chamber by isoelectric strength.
- Patent Document 1 US Patent Application Publication No. 2004Z0182417
- Patent Document 2 US Patent Application Publication No. 2004Z0184792
- Patent Document 3 Japanese Patent Laid-Open No. 2005-39185
- the present invention has been made in view of the above points, and an object of the present invention is to provide a substrate processing apparatus that can prevent hydrogen fluoride from adhering to the inner surface of a chamber.
- an apparatus for storing a substrate in a chamber and processing the substrate the hydrogen fluoride gas supply path for supplying hydrogen fluoride gas into the chamber is provided.
- a substrate processing apparatus is provided, wherein the substrate processing apparatus is formed of A1 or an A1 alloy not subjected to force surface oxidation treatment on a part or all of an inner surface of the chamber.
- the chamber 1 includes a chamber main body and a lid that closes an upper opening of the chamber one main body, and at least an inner surface of the lid is not subjected to the surface oxidation treatment A1 or A1 It is good also as a structure formed with the alloy.
- a loading / unloading port for loading / unloading the substrate into / from the chamber 1 and an opening / closing mechanism for opening / closing the loading / unloading port are provided, and the opening / closing mechanism has an inner surface facing the chamber 1 with the surface oxidation. It is possible to use a structure that is processed and treated with A1 or A1 alloy! ⁇ .
- the surface roughness Ra of the portion formed of the A1 or A1 alloy may be 6. or less. More preferably, the surface roughness Ra of the portion formed of the A1 or A1 alloy may be set to: m or less.
- An ammonia gas supply path for supplying ammonia gas may be provided in the chamber.
- An exhaust path for forcibly exhausting the inside of the chamber may be provided.
- the treatment performed in the chamber may change the silicon dioxide present on the surface of the substrate into a reaction product that can be vaporized by heating.
- the process of transforming silicon dioxide present on the surface of the substrate into a reaction product is, for example, a COR (Chemical Oxide Removal) process.
- a gas containing a halogen element and a basic gas are supplied to the substrate as a processing gas, and the oxide film on the substrate and the gas molecules of the processing gas are chemically reacted to generate a reaction product.
- the gas containing a halogen element is, for example, hydrogen fluoride gas (HF), and the basic gas is, for example, ammonia gas (NH 2).
- HF hydrogen fluoride gas
- NH 2 ammonia gas
- reaction product containing ammonia (NH) 2SiF) and moisture (H 2 O) is produced.
- the present invention it is possible to prevent hydrogen fluoride from remaining in the chamber.
- the concentration and pressure of hydrogen fluoride in the chamber can be stabilized at a target value. It is possible to prevent the processing unevenness of the wafer from occurring.
- the hydrogen fluoride in the chamber can be quickly discharged.
- FIG. 1 is a schematic longitudinal sectional view showing the structure of the surface of a wafer before etching a Si layer.
- FIG. 2 is a schematic longitudinal sectional view showing the structure of the surface of a wafer after etching the Si layer.
- FIG. 3 is a schematic plan view of the processing system.
- FIG. 4 is a schematic longitudinal sectional view showing a configuration of a PHT processing apparatus.
- FIG. 5 is an explanatory diagram showing a configuration of a COR processing device.
- FIG. 6 is a schematic longitudinal sectional view showing a configuration of a chamber of the COR processing apparatus.
- FIG. 7 is a schematic longitudinal sectional view showing the state of the surface of a wafer after COR processing.
- FIG. 8 is a schematic longitudinal sectional view showing the state of the surface of a wafer after PHT processing.
- FIG. 9 is a schematic longitudinal sectional view showing the state of the surface of the wafer after the SiGe layer forming process.
- FIG. 10 is a schematic plan view of a processing system according to another embodiment.
- FIG. 11 is an explanatory diagram of a processing system in which six processing apparatuses are provided around a common transfer chamber.
- FIG. 12 is a graph showing the experimental results of Experiment 1.
- FIG. 13 is a graph showing the experimental results for Specimen A in Experiment 2.
- FIG. 14 is a graph showing the experimental results for test body C in Experiment 2.
- FIG. 15 is a graph showing the experimental results of Experiment 3.
- FIG. 16 is a graph showing the experimental results for Specimen A in Experiment 4.
- FIG. 17 is a graph showing the experimental results for Specimen C of Experiment 4.
- FIG. 1 is a schematic cross-sectional view of the wafer W before the etching process, and shows a part of the surface of the wafer W (device formation surface).
- the wafer W is a silicon wafer having a thin plate shape formed in, for example, a substantially disk shape, and on its surface, a Si (silicon) layer 150 which is a base material of the wafer W, and an acid used as an interlayer insulating layer. ⁇ ⁇ layer (silicon dioxide: SiO) 151, Pol used as gate electrode
- y-Si (polycrystalline silicon) layer 152 and the side wall (side wall) that also has insulator strength For example, a structure consisting of TEOS (tetraethyl orthosilicate: Si (OC H)) layer 153 is formed.
- TEOS tetraethyl orthosilicate: Si (OC H)
- the surface (upper surface) of the Si layer 150 is a substantially flat surface, and the oxide layer 151 is laminated so as to cover the surface of the Si layer 150.
- the oxide layer 151 is formed by a thermal CVD reaction using, for example, a diffusion furnace.
- the Poly-Si layer 152 is formed on the surface of the oxide layer 151, and the Poly-Si layer 152 is etched along a predetermined pattern shape.
- the oxide layer 151 is partially covered by the force SPoly-Si layer 152, and the other part is exposed.
- the TEOS layer 153 is formed so as to cover both side surfaces of the Poly—Si layer 152.
- the Poly-Si layer 152 has a substantially rectangular cross-sectional shape, and is formed in an elongated and prismatic shape extending in the direction of force toward the front side and the back side in FIG.
- the TEOS layer 153 is provided on the left and right sides of the Poly-Si layer 152 along the direction of force from the near side to the far side, and from the bottom edge to the top edge of the Poly-Si layer 152. It has been.
- the surface of the oxide layer 151 is exposed on both the left and right sides of the Poly-Si layer 152 and the TEOS layer 153.
- FIG. 2 shows the state of the wafer W after the etching process.
- the wafer W is formed with an isotropic layer 151, a poly-Si layer 152, a TEOS layer 153 and the like S on the Si layer 150, and then subjected to dry etching, for example.
- the surface of wafer W is exposed on both the right and left sides of Poly-Si layer 152 and TEOS layer 153! /, The oxide layer 151 and a part of the Si layer 150 covered with the oxide layer 151 are removed.
- the recesses 155 generated by etching are formed on the left and right outer sides of the Poly-Si layer 152 and the TEOS layer 153, respectively.
- the recess 155 is formed so as to sink from the height of the lower surface of the oxide layer 151 into the Si layer 150, and the Si layer 150 is exposed on the inner surface of the recess 155. Since the Si layer 150 is easily oxidized, if oxygen in the atmosphere adheres to the surface of the Si layer 150 exposed in the recess 155 in this way, a natural oxide film (silicon dioxide: SiO) 156 is formed on the inner surface of the recess 155. Is formed.
- a processing system that performs COR processing and PHT (Post Heat Treating) processing on the wafer W after etching will be described.
- COR processing a gas containing a halogen element and a basic gas are supplied to the wafer as a process gas to cause a chemical reaction between the natural oxide film adhering to the wafer W and the gas molecules of the process gas.
- the gas containing a halogen element is, for example, hydrogen fluoride gas
- the basic gas is, for example, ammonia gas.
- a reaction product mainly containing ammonium fluorosilicate is produced.
- the PHT process is a process that heats the wafer after the COR process and vaporizes the reaction product by the COR process.
- the processing system 1 shown in FIG. 3 includes a loading / unloading unit 2 for loading / unloading Ueno and W into / from the processing system 1, two load lock chambers 3 provided adjacent to the loading / unloading unit 2, and each load
- This embodiment is provided adjacent to each of the lock chambers 3 and performs PHT processing on the wafer W, and this embodiment is provided adjacent to each PHT processing device 4 and performs COR processing on the wafer W.
- It is equipped with a COR processing device 5 as a substrate processing device (vacuum processing device).
- the PHT processing device 4 and the COR processing device 5 respectively connected to each load lock chamber 3 are arranged in a straight line in this order from the load lock chamber 3 side.
- the loading / unloading unit 2 has a transfer chamber 12 in which a first wafer transfer mechanism 11 for transferring, for example, a substantially disk-shaped wafer W is provided.
- the wafer transfer mechanism 11 has two transfer arms lla and lib that hold the wafer W substantially horizontally.
- an orienter 14 is installed to rotate the wafer W and optically determine the amount of eccentricity for alignment.
- the wafer W is held by the transfer arms lla and lib, and is rotated and straightly moved and moved up and down in a substantially horizontal plane by driving the wafer transfer device 11. It is transported to a desired position.
- the transfer arms lla and lib are moved forward and backward with respect to the carrier C, the orienter 14 and the load lock chamber 3 on the mounting table 10, respectively, so that they can be carried in and out.
- Each load lock chamber 3 is connected to the transfer chamber 12 with a gate valve 16 provided between the load lock chamber 3 and the transfer chamber 12.
- a second wafer transfer mechanism 17 for transferring the wafer W is provided in each load lock chamber 3.
- the wafer transfer mechanism 17 has a transfer arm 17a that holds the wafer W substantially horizontally.
- the load lock chamber 3 can be evacuated.
- the wafer W is held by the transfer arm 17a, and the wafer W is held. It is transported by rotating and rectilinearly moving up and down in a substantially horizontal plane by driving the wafer transport mechanism 17. Then, the wafer W is carried into and out of the PHT processing apparatus 4 by moving the transfer arm 17a forward and backward with respect to the PHT processing apparatuses 4 connected in series to each load lock chamber 3. Furthermore, the wafer W can be carried into and out of the COR processing device 5 by moving the transfer arm 17a forward and backward with respect to the COR processing device 5 via each PHT processing device 4.
- the PHT processing apparatus 4 includes a sealed processing chamber (processing space) 21 in which the wafer W is stored. Although not shown, a loading / unloading port for loading / unloading the wafer W into / from the processing chamber 21 is provided, and a gate valve 22 for opening / closing the loading / unloading port is provided.
- the processing chamber 21 is connected to the load lock chamber 3 with a gate valve 22 provided between the processing chamber 21 and the load lock chamber 3.
- a mounting table 23 is provided in the processing chamber 21 of the PHT processing apparatus 4 for mounting the wafer W substantially horizontally.
- nitrogen gas (N) in the processing chamber 21 is nitrogen gas (N) in the processing chamber 21
- a supply mechanism 26 having a supply path 25 for heating and supplying the second inert gas and an exhaust mechanism 28 having an exhaust path 27 for exhausting the processing chamber 21 are provided.
- the supply path 25 is connected to a nitrogen gas supply source 30.
- the supply passage 25 is provided with a flow rate adjusting valve 31 that can open and close the supply passage 25 and adjust the supply flow rate of nitrogen gas.
- the exhaust passage 27 is provided with an open / close valve 32 and an exhaust pump 33 for forced exhaust.
- the COR processing apparatus 5 includes a chamber 40 having a sealed structure, and the inside of the chamber 40 is a processing chamber (processing space) 41 for storing the wafer W. It has become. Inside the chamber 140, a mounting table 42 is provided for mounting the wafer W in a substantially horizontal state. Further, the COR processing apparatus 5 is provided with a supply mechanism 43 for supplying gas to the processing chamber 41 and an exhaust mechanism 44 for exhausting the inside of the processing chamber 41.
- the chamber 40 is composed of a chamber main body 51 and a lid 52.
- the chamber main body 51 includes a bottom 51a and a substantially cylindrical side wall 51b.
- the lower part of the side wall part 51b is closed by the bottom part 51a, and the upper part of the side wall part 51b is an opening. This upper opening is closed by a lid 52.
- the side wall 51b has a wafer W for carrying it in and out of the processing chamber 41.
- a loading / unloading port 53 is provided, and a gate valve 54 as an opening / closing mechanism for opening and closing the loading / unloading port 53 is provided.
- the processing chamber 41 is connected to the processing chamber 21 with a gate valve 54 provided between the processing chamber 41 and the processing chamber 21 of the PHT processing apparatus 4.
- the lid body 52 includes a lid body 52a and a shower head 52b that discharges a processing gas.
- the shower head 52b is attached to the lower part of the lid body 52a, and serves as an inner surface (lower surface) of the lid body 52.
- the shower head 52b constitutes the ceiling of the chamber 40 and is installed above the mounting table 42.
- the shower head 52b supplies various gases from above to the wafer W on the mounting table 42. /!
- On the lower surface of the shower head 52b, a plurality of discharge ports 52c for discharging gas are opened on the entire lower surface.
- the mounting table 42 has a substantially circular shape in plan view, and is fixed to the bottom 51a. Inside the mounting table 42, a temperature controller 55 for adjusting the temperature of the mounting table 42 is provided.
- the temperature controller 55 is provided with a conduit through which, for example, a temperature-controlling liquid (for example, water) is circulated, and heat exchange is performed with the liquid flowing in the powerful conduit so that the temperature of the mounting table 42 is increased. As a result, the temperature of the wafer W on the mounting table 42 is adjusted.
- a temperature-controlling liquid for example, water
- the supply mechanism 43 includes a hydrogen fluoride gas supply path 61 that supplies hydrogen fluoride gas (HF) as a processing gas containing a halogen element to the shower head 52b and the processing chamber 41 described above.
- the ammonia gas (NH 3) is supplied to the processing chamber 41 as a basic gas.
- Nitrogen gas supply for supplying nitrogen gas (N) as an inert gas to the gas supply path 63 and processing chamber 41 for supplying argon gas (Ar) as an inert gas to the gas supply path 62 and processing chamber 41
- the hydrogen fluoride gas supply path 61, the ammonia gas supply path 62, the argon gas supply path 63, and the nitrogen gas supply path 64 are connected to the shower head 52b, and the treatment chamber 41 is fluorinated via the shower head 52b. Hydrogen gas, ammonia gas, argon gas, and nitrogen gas are discharged and diffused!
- the hydrogen fluoride gas supply path 61 is connected to a hydrogen fluoride gas supply source 71.
- the hydrogen fluoride gas supply path 61 is provided with a flow rate adjusting valve 72 capable of opening / closing the hydrogen fluoride gas supply path 61 and adjusting the supply flow rate of the hydrogen fluoride gas.
- the ammonia gas supply path 62 is connected to an ammonia gas supply source 73. Also, the ammonia gas supply path 62 has an opening / closing operation of the ammonia gas supply path 62 and an ammonia gas supply flow.
- a flow control valve 74 capable of adjusting the amount is provided.
- the argon gas supply path 63 is connected to an argon gas supply source 75.
- the argon gas supply path 63 is provided with a flow rate adjusting valve 76 capable of opening / closing the argon gas supply path 63 and adjusting the supply flow rate of the argon gas.
- the nitrogen gas supply path 64 is connected to a nitrogen gas supply source 77.
- the nitrogen gas supply path 64 is provided with a flow rate adjusting valve 78 capable of opening / closing the nitrogen gas supply path 64 and adjusting the supply flow rate of the nitrogen gas.
- the exhaust mechanism 44 includes an exhaust passage 85 in which an open / close valve 82 and an exhaust pump 83 for performing forced exhaust are interposed.
- the end opening of the exhaust passage 85 is opened to the bottom 51a.
- A1 is used as the material of various components such as the chamber 40 and the mounting table 42 constituting the COR processing apparatus 5.
- the inner surface of the chamber 140 (the inner surface of the chamber main body 51, the lower surface of the shower head 52b, etc.) is subjected to surface oxidation treatment, but in this embodiment, the surface oxidation treatment is not performed.
- the innocent A1 is still exposed. That is, it is in a state where there is no acid soot film that easily adsorbs hydrogen fluoride. In this case, it is possible to prevent the hydrogen fluoride gas power supplied in the chamber 140 from remaining attached to the inner surface of the chamber 140.
- the oxide film formed by the surface oxidation treatment has a porous shape with innumerable small pores on the surface, and hydrogen fluoride gas components remain attached to the small pores. It is thought that hydrogen fluoride is easily adsorbed on the film. On the other hand, the surface of the solid A1 is smooth, so it is considered that hydrogen and hydrogen are unlikely to remain. In addition, such residual hydrogen fluoride is present on the inner surface of the chamber 40 where A1 is exposed as it is (inner surface of the chamber body 51, the inner surface of the portion constituted by A1 on the lower surface of the shower head 52b, etc.). It can be further suppressed by reducing the surface roughness Ra.
- the roughness Ra to, for example, 6.4 / z m or less, more preferably 1 ⁇ m or less, it is possible to more reliably suppress the remaining hydrogen fluoride.
- the surface of A1 constituting the mounting table 42 is preferably subjected to surface oxidation treatment because there is a risk of being subjected to friction or impact due to the wafer W being mounted or the like. That is, the surface of the mounting table 42 is forcibly oxidized to form an oxide film (Al 2 O 3). It is preferable to cover the outer surface of Al with an acid-containing coating. In this way, the hardness, corrosion resistance and durability of the outer surface of the mounting table 42 can be improved, and the A1 constituting the mounting table 42 can be protected against corrosion and impact.
- a wafer W processing method in the processing system 1 configured as described above will be described.
- an etching process is performed by a wafer W force dry etching apparatus having a Si layer 150, an oxide layer 151, a Poly-Si layer 152, and a TEOS layer 153 as shown in FIG. A recess in which the Si layer 150 is exposed is formed.
- the wafer W after such dry etching is stored in the carrier C and transferred to the processing system 1.
- a carrier C storing a plurality of wafers W is placed on the mounting table 13, and one wafer is transferred from the carrier C by the wafer transfer mechanism 11.
- Yeha W is taken out and loaded into the load lock chamber 3.
- the load lock chamber 3 is sealed and decompressed. Thereafter, the gate valves 22 and 54 are opened, and the load lock chamber 3 and the processing chamber 21 of the PHT processing apparatus 4 and the processing chamber 41 of the COR processing apparatus 5 that are decompressed with respect to the atmospheric pressure are communicated with each other.
- the wafer W is unloaded from the load lock chamber 3 by the wafer transfer mechanism 17 and moved straight so as to pass through the loading / unloading port (not shown) of the processing chamber 21, the processing chamber 21, and the loading / unloading port 53 in this order. Then, it is carried into processing room 41.
- the wafer W is transferred from the transfer arm 17 a of the wafer transfer mechanism 17 to the mounting table 42 with the surface (device formation surface) as the upper surface.
- the loading / unloading port 53 is closed and the processing chamber 41 is sealed.
- ammonia gas, argon gas, and nitrogen gas are supplied to the processing chamber 41 from an ammonia gas supply path 62, an argon gas supply path 63, and a nitrogen gas supply path 64, respectively. Further, the temperature controller 55 adjusts the temperature of the wafer W to a predetermined target value (for example, about 25 ° C.).
- hydrogen fluoride gas is supplied from the hydrogen fluoride gas supply path 61 to the processing chamber 41.
- ammonia gas is supplied to the processing chamber 41 in advance, by supplying hydrogen fluoride gas, the atmosphere of the processing chamber 41 is changed to a processing atmosphere containing hydrogen fluoride gas and ammonia gas. Then, the COR process is started on the wafer W.
- the pressure in the processing chamber 41 is reduced to a predetermined level before supplying the hydrogen fluoride gas, the pressure in the processing atmosphere is stabilized immediately and immediately. The uniformity of the concentration of hydrogen fluoride gas or ammonia gas can be improved. Therefore, uneven processing of wafer W can be prevented.
- hydrogen fluoride gas tends to be liquefied, easily adheres to the inner surface of the chamber 40, and so on. However, if it is supplied immediately before the COR process, such a problem will occur. Can be suppressed.
- the natural oxide film 156 existing on the surface of the concave portion 155 of the wafer W reacts with the molecules of hydrogen fluoride gas and ammonia gas. It is transformed into a product (see Figure 7).
- the atmosphere in the process chamber 41 is maintained at a constant pressure (for example, about 0.1 Torr (about 13.3 Pa)) reduced from the atmospheric pressure.
- the reaction product is a force that can generate ammonia such as fluorinated acid.
- the generated water does not diffuse the surface force of the wafer W, and the reaction product (the natural product transformed into the reaction product). It is confined in the oxide film 156) and is held on the surface of the wafer W.
- the inner surface of the chamber 140 is not subjected to surface oxidation treatment, and moisture generated by the force reaction in which A1 is exposed is a reaction product (a natural product transformed into a reaction product). Oxide film 156)
- the force also does not diffuse! Therefore, it does not contact the inner surface of the chamber 140. Therefore, even if A1 is exposed, there is no possibility that A1 constituting the inner surface of the chamber 40 will be corroded by moisture.
- the porous oxide film that easily adsorbs hydrogen fluoride does not substantially exist on the inner surface of the chamber 140, the hydrogen fluoride in the processing atmosphere of the processing chamber 41 is not in the chamber 40. Adsorption to the inner surface can be prevented. Therefore, it is possible to prevent the concentration and pressure of the hydrogen fluoride gas in the processing atmosphere from decreasing. Further, since hydrogen fluoride is unlikely to accumulate on the inner surface of the chamber 140, hydrogen fluoride is not released into the inner surface force treatment atmosphere of the chamber 140. Therefore, it is possible to prevent the concentration and pressure of hydrogen fluoride gas in the processing atmosphere from increasing.
- the concentration and pressure of the hydrogen fluoride gas in the processing chamber 41 can be prevented from increasing / decreasing or uneven, and the processing atmosphere can be stabilized well. Therefore, the processing unevenness of the wafer W can be prevented from occurring, and the wafer W can be processed reliably.
- the process chamber 41 is forcibly evacuated and decompressed. As a result, hydrogen fluoride gas and ammonia gas are forcibly discharged from the processing chamber 41.
- the inner surface of the chamber 40 is solid A1, and hydrogen fluoride is unlikely to remain on the inner surface of the chamber 40, so that the components of hydrogen fluoride can be discharged smoothly and quickly from the processing chamber 41. it can. Therefore, it is possible to reliably prevent hydrogen fluoride from leaking out of the chamber 140, which is safe.
- the time required for forced exhaust after COR processing can be shortened, and throughput can be improved.
- the loading / unloading port 53 is opened, and the wafer W is unloaded from the processing chamber 41 by the wafer transfer mechanism 17 and loaded into the processing chamber 21 of the PHT processing apparatus 4.
- the wafer W is placed in the processing chamber 21 with the surface thereof as the upper surface.
- the processing chamber 21 is sealed and PHT processing is started.
- a high-temperature heating gas is supplied into the processing chamber 21 and the temperature in the processing chamber 21 is raised.
- the reaction product naturally oxide film 156 transformed into the reaction product generated by the COR treatment is heated and vaporized, removed from the inner surface of the recess 155, and the surface of the Si layer 150 is exposed. (See Figure 8).
- Ueno and W can be dry-cleaned, and the natural oxide film 156 can be removed from the surface of the Si layer 150 by dry etching.
- the load lock chamber 3 is sealed, the load lock chamber 3 and the transfer chamber 12 are communicated. Then, the wafer transport mechanism 11 unloads the wafer W from the load lock chamber 3 and returns it to the carrier C on the mounting table 13. As described above, a series of steps in the processing system 1 is completed.
- the wafer W after the completion of the COR processing and the PHT processing in the processing system 1 is carried into the epitaxial growth apparatus and the SiGe film forming processing is performed in another processing system. .
- the reaction gas supplied into the processing chamber 34 and the Si layer 150 exposed in the recess 155 of the wafer W chemically react to form SiGe in the recess 155.
- Layer 157 grows epitaxially (see Figure 9).
- the natural oxide film 156 is removed from the surface of the Si layer 150 exposed in the recess 155 by the above-described COR processing and PHT processing, the SiGe layer 157 is formed of the Si layer 150. It is preferably grown on the surface.
- a strained Si layer 158 having a compressive strain is formed in a portion sandwiched by the SiGe layer 157 below the Poly-Si layer 152 and the oxide layer 151.
- the COR processing device 5 of the powerful processing system 1 since an oxide film formed by surface oxidation treatment is not formed on the inner surface of the chamber 140, hydrogen fluoride adheres to the inner surface of the chamber 140. It can be prevented from remaining as it is.
- the surface roughness Ra of the inner surface of the chamber 140 (the portion that has been left as A1 without being subjected to surface oxidation treatment) is set to 6. or less, more preferably 1 m or less, thereby Residue can be more reliably suppressed.
- the concentration and pressure of hydrogen fluoride in the chamber 140 can be stabilized at target values, and uneven processing of the wafer W can be prevented. Therefore, the processing reliability of the wafer W can be improved.
- hydrogen fluoride does not remain on the inner surface of the chamber 140 and hydrogen fluoride can be quickly discharged from the processing chamber 41, the throughput is improved. In addition, since hydrogen fluoride can be discharged reliably, safety is high!
- the COR processing apparatus 5 is exemplified as the substrate processing apparatus for supplying hydrogen fluoride to process the substrate.
- the present invention is not limited to a powerful apparatus, and other groups.
- the present invention can also be applied to a plate processing apparatus, for example, a substrate processing apparatus that performs an oxide film etching process on a substrate.
- the substrate is not limited to a semiconductor wafer, and may be, for example, glass for LCD substrates, CD substrates, printed substrates, ceramic substrates, and the like.
- the portion of the chamber 140 that is not subjected to the surface oxidation treatment and is left as pure A1 is not limited to the location shown in the above embodiment.
- the inner surface (gate) of the gate valve 54 The surface facing the inner side of the member 40 may be made of solid Al.
- the lower surface of the lid 52 (the lower surface of the shower head 52b) may be a solid A1, and the inner surface of the chamber main body 51 may be subjected to surface oxidation treatment.
- the inner surface of the chamber main body 51 may be made of pure A1, and the lower surface of the lid body 52 may be subjected to surface oxidation treatment.
- the amount of hydrogen fluoride adsorbed can be reduced more effectively than when the entire inner surface of the chamber 140 is subjected to surface oxidation treatment.
- the material constituting the chamber 140 may be an A1 alloy mainly composed of a force A1 of A1.
- the surface of the solid A1 alloy that is not subjected to surface oxidation treatment is smooth, and hydrogen fluoride is unlikely to remain. Therefore, in this case as well, the adsorption amount of hydrogen fluoride can be reduced by using a solid A1 alloy without subjecting the inner surface of the chamber 140 to a part or the whole of the surface acidification treatment.
- the type of gas supplied to the processing chamber 41 in addition to hydrogen fluoride is not limited to the combinations shown in the above embodiments.
- the inert gas supplied to the processing chamber 41 may be only argon gas.
- the inert gas may be any other inert gas such as helium gas (He) or xenon gas (Xe), argon gas, nitrogen gas, helium. It may be a mixture of two or more of gas and xenon gas.
- the structure of the processing system 1 is not limited to that shown in the above embodiment.
- a processing system including an epitaxial growth apparatus may be used.
- a common transfer chamber 92 having a wafer transfer mechanism 91 is connected to the transfer chamber 12 via a load lock chamber 93, and the common transfer chamber 92 is surrounded by the same.
- the COR processing device 95, the PHT processing device 96, and the epitaxial growth device 97 may be provided.
- a wafer transfer mechanism 91 allows wafers W to be loaded into and unloaded from the load lock chamber 92, the COR processing apparatus 95, the PHT processing apparatus 96, and the epitaxial growth apparatus 97, respectively.
- the common transfer chamber 92 can be evacuated. That is, by making the inside of the common transfer chamber 92 in a vacuum state, the wafer W unloaded from the PHT processing apparatus 96 can be loaded into the epitaxial growth apparatus 97 without being brought into contact with oxygen in the atmosphere. Therefore, after PHT treatment Therefore, it is possible to prevent the natural oxide film from re-adhering to the wafer w, and it is possible to favorably perform the epitaxial growth. Further, for example, as shown in FIG. 11, the present invention can be applied to a processing system 106 in which six processing devices 100 to 105 are provided around a common transfer chamber (transfer channel) 99. The number and arrangement of processing devices provided in the processing system are arbitrary.
- Specimen A was a chamber 40 in which the entire inner surface of A1 chamber 40 was subjected to surface oxidation treatment and was not used.
- Specimen B is chamber 40 in which the inner surface of chamber main body 51 is subjected to surface oxidation treatment, and the lower surface of lid 52 (the lower surface of shower head 52b) remains solid A1. It was supposed to be.
- Specimen C was a chamber 40 in which the entire inner surface of chamber 40 was a solid A1, and was not used.
- Experiment 2 was performed to compare pressure changes in the processing chamber 41 when the pressure was reduced after hydrogen fluoride gas was supplied into the processing chamber 41. Specifically, first, hydrogen fluoride gas is introduced into the processing chamber 41 at a constant flow rate (approximately 80 sccm (approximately 1.35 X 10 _1 mV s)), forced exhaust was performed at a constant displacement, and the pressure in the processing chamber 41 was reduced to a predetermined value (approximately 2.5 mTorr (approximately 0.33 Pa)). In this state, the supply of the hydrogen fluoride gas was stopped and only the forced exhaustion was continued, so that the inside of the processing chamber 41 was decompressed.
- a constant flow rate approximately 80 sccm (approximately 1.35 X 10 _1 mV s)
- forced exhaust was performed at a constant displacement
- the pressure in the processing chamber 41 was reduced to a predetermined value (approximately 2.5 mTorr (appro
- the amount of gas in the processing chamber 41 increased and the pressure drop was hindered.
- the hydrogen gas is not adsorbed on the inner surface of the chamber 140, so that the inner surface force of the chamber 140 is not released during the exhaust, and the exhaust is quickly performed. It is thought to be done. Therefore, by making the inner surface of the chamber 40 solid A1 and preventing the adsorption of hydrogen fluoride, the processing chamber 41 can be efficiently exhausted, and the time required for exhausting can be greatly reduced. It was confirmed.
- the present inventors conducted an experiment 4 for examining the etching amount and etching uniformity applied to each wafer W when 100 wafers W were continuously processed for two types of test specimens A and C. It was.
- the etching amount is measured at a plurality of locations on the wafer W. From this, the average value of the etching amount [nm] and the in-plane uniformity of the etching amount (Etch Amount Uniformity)
- the difference in the etching amount in the plane of [1] was calculated as [%] and 3 ⁇ [nm] ( ⁇ : standard deviation).
- the target value for the etching amount was 10 nm.
- the results of powerful experiment 4 are shown in the graphs of FIGS. As is clear from the comparison between FIG.
- Specimen C can achieve the target etching amount than Specimen A, and the uniformity of the etching amount variation on each wafer W is small. It was. Therefore, it was confirmed that Specimen C had higher etching process reliability.
- the etching amount on the first wafer W is smaller than the target value. This is because part of the hydrogen fluoride gas supplied into the processing chamber 41 is adsorbed on the oxide film. This is probably because the concentration and pressure of hydrogen fluoride in the processing chamber 41 decreased and the processing performance deteriorated.
- the etching amount of the second and subsequent wafers W is significantly larger than the target value. This is because the hydrogen fluoride in the oxide film is processed during the second and subsequent processing.
- the adsorption performance is already saturated, that is, no further adsorption is performed, and hydrogen fluoride accumulated in the oxide film is released from the oxide film, and the concentration of hydrogen fluoride in the processing chamber 41 is reduced. This is thought to be due to the fact that the etching process performance was improved too much due to a rise in pressure.
- the etching amount for the first wafer W was almost the target value, and the etching amount for the second and subsequent wafers W was almost the target value. This is because the oxide film is not formed on the inner surface of the chamber 40, so that adsorption and release of hydrogen fluoride are not performed, and the concentration and pressure of hydrogen fluoride in the processing chamber 41 are almost the target values.
- test piece 5 The adsorption amount of hydrogen fluoride was compared between test piece 1 made of hard sulfuric acid alumite, test piece 2 made of OGF alumite, and test pieces 3 and 4 made of A1 (solid A1).
- OGF alumite of the test piece 2 is a material with a very low outgassing amount from the coating treated with OUT GAS FREE (OGF) for high vacuum.
- OGF is a registered trademark of Mitsubishi Aluminum Corporation.
- the surface of the test piece 3 made of A1 was mirror-polished (OMCP), and the surface roughness Ra was set to about 0.1 to 1. O / zm.
- the surface of the test piece 4 having A1 force was not subjected to any special surface treatment, and was cut Al (Bare).
- the surface roughness Ra of the test piece 4 is about 3.2 to 6.4 m.
- Each of these test pieces 1 to 4 was placed in an atmosphere of hydrogen fluoride gas, and then the amount of fluorine extracted per unit area in each of the test pieces 1 to 4 was measured by ion chromatography. As a result, Table 1 shown in FIG. 18 was obtained.
- the fluorine extraction amount measured from each test piece 1 to 4 is proportional to the adsorption amount of hydrogen fluoride to each test piece 1 to 4. From the comparison of test piece 1 and test piece 4, it was found that the cutting Al (test piece 4) had a lower hydrogen fluoride adsorption amount than sulfuric hard anodized (test piece 1) without any special surface treatment. Yes. Cutting A1 (test piece 4) can prevent pressure drop in the processing chamber (experiment 1), and exhaust time can be significantly reduced (experiment 2), compared to hard sulfuric acid anodized (test piece 1), and supply flow rate. Can be adjusted accurately (Experiment 3), and the etching uniformity is excellent (Experiment 4).
- the present invention can be applied to a substrate processing apparatus.
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Abstract
Description
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JP2007551043A JP4805948B2 (ja) | 2005-12-22 | 2006-12-12 | 基板処理装置 |
US12/086,634 US20100163179A1 (en) | 2005-12-22 | 2006-12-12 | Substrate Processing Apparatus |
KR1020077023337A KR101100466B1 (ko) | 2005-12-22 | 2006-12-12 | 기판 처리 장치 |
US13/423,722 US20120178263A1 (en) | 2005-12-22 | 2012-03-19 | Substrate processing apparatus |
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US13/423,722 Continuation US20120178263A1 (en) | 2005-12-22 | 2012-03-19 | Substrate processing apparatus |
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JP (1) | JP4805948B2 (ja) |
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JP2020057671A (ja) * | 2018-09-29 | 2020-04-09 | 株式会社フジキン | 活性ガス供給システムとそれを用いた半導体製造装置 |
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JP5885404B2 (ja) * | 2010-08-04 | 2016-03-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP5975747B2 (ja) * | 2012-06-12 | 2016-08-23 | 太陽誘電ケミカルテクノロジー株式会社 | 真空チャンバー構成部品 |
US10290553B2 (en) * | 2015-06-24 | 2019-05-14 | Tokyo Electron Limited | System and method of determining process completion of post heat treatment of a dry etch process |
WO2019083735A1 (en) * | 2017-10-23 | 2019-05-02 | Lam Research Ag | SYSTEMS AND METHODS FOR PREVENTING THE STATIC FRICTION OF HIGH-SHAPE RATIO STRUCTURES AND / OR REPAIRING HIGH-SHAPE RATIO STRUCTURES |
JP7296613B2 (ja) * | 2018-09-29 | 2023-06-23 | 株式会社フジキン | 活性ガス反応量評価方法及びこれに用いる評価装置 |
TW202107528A (zh) * | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
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US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
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2006
- 2006-12-12 WO PCT/JP2006/324747 patent/WO2007072708A1/ja active Application Filing
- 2006-12-12 JP JP2007551043A patent/JP4805948B2/ja active Active
- 2006-12-12 KR KR1020077023337A patent/KR101100466B1/ko not_active IP Right Cessation
- 2006-12-12 US US12/086,634 patent/US20100163179A1/en not_active Abandoned
- 2006-12-22 TW TW095148576A patent/TW200731395A/zh unknown
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2012
- 2012-03-19 US US13/423,722 patent/US20120178263A1/en not_active Abandoned
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JPH06224153A (ja) * | 1992-11-09 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | エッチング方法及び装置 |
JP2000299289A (ja) * | 1999-01-12 | 2000-10-24 | Central Glass Co Ltd | クリーニングガス及び真空処理装置のクリーニング方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017126734A (ja) * | 2016-01-13 | 2017-07-20 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び基板処理システム |
CN111489993A (zh) * | 2016-01-13 | 2020-08-04 | 东京毅力科创株式会社 | 基板处理装置 |
JP2020057671A (ja) * | 2018-09-29 | 2020-04-09 | 株式会社フジキン | 活性ガス供給システムとそれを用いた半導体製造装置 |
JP7113507B2 (ja) | 2018-09-29 | 2022-08-05 | 株式会社フジキン | 活性ガス供給システムとそれを用いた半導体製造装置 |
KR20210034496A (ko) | 2019-09-20 | 2021-03-30 | 도쿄엘렉트론가부시키가이샤 | 에칭 장치 및 에칭 방법 |
KR20240011180A (ko) | 2021-06-04 | 2024-01-25 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20120178263A1 (en) | 2012-07-12 |
JPWO2007072708A1 (ja) | 2009-05-28 |
KR20080084565A (ko) | 2008-09-19 |
KR101100466B1 (ko) | 2011-12-29 |
JP4805948B2 (ja) | 2011-11-02 |
TW200731395A (en) | 2007-08-16 |
US20100163179A1 (en) | 2010-07-01 |
TWI361460B (ja) | 2012-04-01 |
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