JP2017126734A - 基板処理方法、基板処理装置及び基板処理システム - Google Patents
基板処理方法、基板処理装置及び基板処理システム Download PDFInfo
- Publication number
- JP2017126734A JP2017126734A JP2016183133A JP2016183133A JP2017126734A JP 2017126734 A JP2017126734 A JP 2017126734A JP 2016183133 A JP2016183133 A JP 2016183133A JP 2016183133 A JP2016183133 A JP 2016183133A JP 2017126734 A JP2017126734 A JP 2017126734A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- atmosphere
- substrate processing
- substrate
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 238000012545 processing Methods 0.000 title claims description 82
- 238000000034 method Methods 0.000 claims abstract description 99
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 72
- 239000011737 fluorine Substances 0.000 claims abstract description 64
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 59
- 238000012805 post-processing Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 23
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 163
- 125000001153 fluoro group Chemical group F* 0.000 description 47
- 238000012546 transfer Methods 0.000 description 28
- 239000007789 gas Substances 0.000 description 23
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- -1 ammonium fluorosilicate Chemical compound 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 150000002221 fluorine Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01009—Fluorine [F]
Abstract
Description
10 基板処理システム
13 プロセスモジュール
20 クーリングストレージ
29 水分供給機構
Claims (14)
- 基板に弗素を含有するガスを用いた処理を施す第1のステップと、
前記基板を、水分を含有する雰囲気へ晒す第2のステップとを有することを特徴とする基板処理方法。 - 前記雰囲気に含まれる水分の量は50g/m3以上であることを特徴とする請求項1記載の基板処理方法。
- 前記第2のステップにおいて、前記基板を前記雰囲気へ所定の時間に亘って晒すことを特徴とする請求項1又は2記載の基板処理方法。
- 前記第2のステップにおいて、前記基板の温度を10℃〜80℃に維持することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。
- 前記第2のステップにおいて、前記基板の温度を24℃〜60℃に維持することを特徴とする請求項4記載の基板処理方法。
- 前記第2のステップにおいて、前記基板の温度が前記雰囲気の温度より高く、且つ前記雰囲気の温度との差が50℃以内となるように設定されることを特徴とする請求項1記載の基板処理方法。
- 前記雰囲気に含まれる水分の量は88.5g/m3以上であることを特徴とする請求項6記載の基板処理方法。
- 前記第2のステップにおいて、前記基板を前記雰囲気へ少なくとも3分間晒すことを特徴とする請求項7記載の基板処理方法。
- 前記弗素を含有するガスを用いた処理はCOR処理であることを特徴とする請求項1乃至8のいずれか1項に記載の基板処理方法。
- 前記弗素を含有するガスを用いた処理は、前記ガスから生じた弗素プラズマを用いる処理であることを特徴とする請求項1乃至8のいずれか1項に記載の基板処理方法。
- 弗素を含有するガスを用いた処理が施された基板を収容する処理室と、
前記処理室内の雰囲気に水分を含有させる水分含有機構とを備えることを特徴とする基板処理装置。 - 前記水分含有機構は、前記雰囲気に含まれる水分の量を50g/m3以上に設定する請求項11記載の基板処理装置。
- 基板に弗素を含有するガスを用いた処理を施す基板処理装置と、
前記弗素を含有するガスを用いた処理が施された基板を、水分を含有する雰囲気へ晒す後処理装置とを備えることを特徴とする基板処理システム。 - 前記雰囲気に含まれる水分の量は50g/m3以上であることを特徴とする請求項13記載の基板処理システム。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170000810A KR101920986B1 (ko) | 2016-01-13 | 2017-01-03 | 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 |
CN201710007284.0A CN107026080B (zh) | 2016-01-13 | 2017-01-05 | 基板处理方法、基板处理装置以及基板处理系统 |
CN202010342111.6A CN111489993A (zh) | 2016-01-13 | 2017-01-05 | 基板处理装置 |
US15/402,419 US10903083B2 (en) | 2016-01-13 | 2017-01-10 | Substrate processing method, substrate processing apparatus and substrate processing system |
TW106100786A TWI719107B (zh) | 2016-01-13 | 2017-01-11 | 基板處理方法、基板處理裝置及基板處理系統 |
US17/097,466 US20210104412A1 (en) | 2016-01-13 | 2020-11-13 | Substrate processing method, substrate processing apparatus and substrate processing system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016004719 | 2016-01-13 | ||
JP2016004719 | 2016-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017126734A true JP2017126734A (ja) | 2017-07-20 |
JP6854611B2 JP6854611B2 (ja) | 2021-04-07 |
Family
ID=59365083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016183133A Active JP6854611B2 (ja) | 2016-01-13 | 2016-09-20 | 基板処理方法、基板処理装置及び基板処理システム |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6854611B2 (ja) |
KR (1) | KR101920986B1 (ja) |
CN (2) | CN111489993A (ja) |
TW (1) | TWI719107B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020008954A1 (ja) * | 2018-07-04 | 2020-01-09 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
WO2021065203A1 (ja) * | 2019-10-04 | 2021-04-08 | 東京エレクトロン株式会社 | 加熱冷却装置及び加熱冷却方法 |
KR20210064060A (ko) | 2019-11-25 | 2021-06-02 | 도쿄엘렉트론가부시키가이샤 | 기판 세정 장치 및 기판 세정 방법 |
JP2021132220A (ja) * | 2016-11-11 | 2021-09-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 高アスペクト比の構造体のための除去方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0529292A (ja) * | 1990-11-30 | 1993-02-05 | Dainippon Screen Mfg Co Ltd | 基板表面の洗浄方法 |
JPH05331630A (ja) * | 1992-06-01 | 1993-12-14 | Central Glass Co Ltd | 三フッ化塩素ガスの除去方法 |
JPH10163127A (ja) * | 1996-12-04 | 1998-06-19 | Shibaura Eng Works Co Ltd | 半導体装置の製造方法 |
JP2004103944A (ja) * | 2002-09-11 | 2004-04-02 | Seiko Epson Corp | アッシング方法、ドライエッチング装置、電気光学装置の製造方法および電気光学装置の製造装置 |
WO2007072708A1 (ja) * | 2005-12-22 | 2007-06-28 | Tokyo Electron Limited | 基板処理装置 |
JP2007227764A (ja) * | 2006-02-24 | 2007-09-06 | Dainippon Screen Mfg Co Ltd | 基板表面処理装置、基板表面処理方法および基板処理装置 |
KR100791688B1 (ko) * | 2006-09-11 | 2008-01-03 | 동부일렉트로닉스 주식회사 | 반도체 제조 공정에서의 듀얼 다마신 패턴 형성 방법 |
JP2009158774A (ja) * | 2007-12-27 | 2009-07-16 | Tokyo Electron Ltd | 基板処理方法、基板処理装置及び記憶媒体 |
JP2010135849A (ja) * | 2003-06-24 | 2010-06-17 | Tokyo Electron Ltd | 被処理体処理装置の圧力制御方法 |
JP2015504239A (ja) * | 2011-11-08 | 2015-02-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 水蒸気処理を使用して基板から材料層を除去する方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100481256B1 (ko) * | 1998-12-15 | 2005-04-11 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 유출 기체류의 사용점 처리 장치 및 방법 |
US20060062914A1 (en) * | 2004-09-21 | 2006-03-23 | Diwakar Garg | Apparatus and process for surface treatment of substrate using an activated reactive gas |
WO2007021814A2 (en) * | 2005-08-11 | 2007-02-22 | Eksigent Technologies, Llc | Plastic surfaces and apparatuses for reduced adsorption of solutes and methods of preparing the same |
JP2007243014A (ja) * | 2006-03-10 | 2007-09-20 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP5492574B2 (ja) * | 2010-01-08 | 2014-05-14 | 東京エレクトロン株式会社 | 基板のクリーニング方法及び基板のクリーニング装置 |
CN102770944B (zh) * | 2010-02-25 | 2013-11-06 | 积水化学工业株式会社 | 蚀刻方法及装置 |
JP5987003B2 (ja) * | 2011-01-07 | 2016-09-06 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | インキュベーターアセンブリ及び絶対湿度を制御する関連の制御装置 |
JP6531422B2 (ja) * | 2014-03-11 | 2019-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体 |
JP6428466B2 (ja) * | 2014-06-23 | 2018-11-28 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム及び記憶媒体 |
-
2016
- 2016-09-20 JP JP2016183133A patent/JP6854611B2/ja active Active
-
2017
- 2017-01-03 KR KR1020170000810A patent/KR101920986B1/ko active IP Right Grant
- 2017-01-05 CN CN202010342111.6A patent/CN111489993A/zh active Pending
- 2017-01-05 CN CN201710007284.0A patent/CN107026080B/zh active Active
- 2017-01-11 TW TW106100786A patent/TWI719107B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0529292A (ja) * | 1990-11-30 | 1993-02-05 | Dainippon Screen Mfg Co Ltd | 基板表面の洗浄方法 |
JPH05331630A (ja) * | 1992-06-01 | 1993-12-14 | Central Glass Co Ltd | 三フッ化塩素ガスの除去方法 |
JPH10163127A (ja) * | 1996-12-04 | 1998-06-19 | Shibaura Eng Works Co Ltd | 半導体装置の製造方法 |
JP2004103944A (ja) * | 2002-09-11 | 2004-04-02 | Seiko Epson Corp | アッシング方法、ドライエッチング装置、電気光学装置の製造方法および電気光学装置の製造装置 |
JP2010135849A (ja) * | 2003-06-24 | 2010-06-17 | Tokyo Electron Ltd | 被処理体処理装置の圧力制御方法 |
WO2007072708A1 (ja) * | 2005-12-22 | 2007-06-28 | Tokyo Electron Limited | 基板処理装置 |
JP2007227764A (ja) * | 2006-02-24 | 2007-09-06 | Dainippon Screen Mfg Co Ltd | 基板表面処理装置、基板表面処理方法および基板処理装置 |
KR100791688B1 (ko) * | 2006-09-11 | 2008-01-03 | 동부일렉트로닉스 주식회사 | 반도체 제조 공정에서의 듀얼 다마신 패턴 형성 방법 |
JP2009158774A (ja) * | 2007-12-27 | 2009-07-16 | Tokyo Electron Ltd | 基板処理方法、基板処理装置及び記憶媒体 |
JP2015504239A (ja) * | 2011-11-08 | 2015-02-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 水蒸気処理を使用して基板から材料層を除去する方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021132220A (ja) * | 2016-11-11 | 2021-09-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 高アスペクト比の構造体のための除去方法 |
JP7343543B2 (ja) | 2016-11-11 | 2023-09-12 | アプライド マテリアルズ インコーポレイテッド | 高アスペクト比の構造体のための除去方法 |
WO2020008954A1 (ja) * | 2018-07-04 | 2020-01-09 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2020009835A (ja) * | 2018-07-04 | 2020-01-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP7137976B2 (ja) | 2018-07-04 | 2022-09-15 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
WO2021065203A1 (ja) * | 2019-10-04 | 2021-04-08 | 東京エレクトロン株式会社 | 加熱冷却装置及び加熱冷却方法 |
JP7365423B2 (ja) | 2019-10-04 | 2023-10-19 | 東京エレクトロン株式会社 | 加熱冷却装置及び加熱冷却方法 |
KR20210064060A (ko) | 2019-11-25 | 2021-06-02 | 도쿄엘렉트론가부시키가이샤 | 기판 세정 장치 및 기판 세정 방법 |
US11557493B2 (en) | 2019-11-25 | 2023-01-17 | Tokyo Electron Limited | Substrate cleaning apparatus and substrate cleaning method |
Also Published As
Publication number | Publication date |
---|---|
CN111489993A (zh) | 2020-08-04 |
CN107026080B (zh) | 2020-06-09 |
KR101920986B1 (ko) | 2018-11-21 |
TWI719107B (zh) | 2021-02-21 |
JP6854611B2 (ja) | 2021-04-07 |
TW201737292A (zh) | 2017-10-16 |
CN107026080A (zh) | 2017-08-08 |
KR20170084993A (ko) | 2017-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100964041B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
US9911635B2 (en) | Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium | |
JP6854611B2 (ja) | 基板処理方法、基板処理装置及び基板処理システム | |
US20090191340A1 (en) | Substrate processing method and system | |
US11148179B2 (en) | Method for cleaning substrate transfer mechanism and substrate processing system | |
JP5809771B2 (ja) | 基板処理方法、基板処理装置、半導体装置の製造方法及びプログラム | |
JP2009272558A (ja) | 半導体装置の製造方法、半導体装置及び半導体製造装置 | |
JP2009094307A (ja) | エッチング方法及び記録媒体 | |
JP2019201201A (ja) | 基板処理方法、記憶媒体及び基板処理装置 | |
US20210159096A1 (en) | Substrate cleaning apparatus and substrate cleaning method | |
TWI398920B (zh) | Surface treatment of substrates | |
KR20170032857A (ko) | 기판 처리 방법, 기판 처리 장치 및 기억 매체 | |
JP2004281824A (ja) | 基板処理装置および基板処理方法 | |
US10141195B2 (en) | Substrate processing method | |
JP2017157660A (ja) | 半導体装置の製造方法および基板処理装置 | |
US20210104412A1 (en) | Substrate processing method, substrate processing apparatus and substrate processing system | |
JP6376960B2 (ja) | 基板処理装置および基板処理方法 | |
JP7175151B2 (ja) | 搬送方法 | |
WO2024018986A1 (ja) | 基板処理装置および基板処理方法 | |
JP7153499B2 (ja) | 酸素含有被処理体の処理方法及び処理装置 | |
JP6945361B2 (ja) | 基板処理方法および基板処理装置 | |
JP2022075362A (ja) | 熱処理装置及びダミー基板の処理方法 | |
JP2022066876A (ja) | ボート搬入方法及び熱処理装置 | |
JP2009272356A (ja) | 基板処理方法 | |
JP2002134496A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190417 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200204 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200131 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200908 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201027 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210216 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210316 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6854611 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |