JP6854611B2 - 基板処理方法、基板処理装置及び基板処理システム - Google Patents
基板処理方法、基板処理装置及び基板処理システム Download PDFInfo
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- JP6854611B2 JP6854611B2 JP2016183133A JP2016183133A JP6854611B2 JP 6854611 B2 JP6854611 B2 JP 6854611B2 JP 2016183133 A JP2016183133 A JP 2016183133A JP 2016183133 A JP2016183133 A JP 2016183133A JP 6854611 B2 JP6854611 B2 JP 6854611B2
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- 238000012545 processing Methods 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 title claims description 61
- 238000003672 processing method Methods 0.000 title claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 77
- 239000011737 fluorine Substances 0.000 claims description 72
- 238000011282 treatment Methods 0.000 claims description 71
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 43
- 235000012431 wafers Nutrition 0.000 description 167
- 125000001153 fluoro group Chemical group F* 0.000 description 48
- 239000007789 gas Substances 0.000 description 26
- 238000012546 transfer Methods 0.000 description 26
- 238000001816 cooling Methods 0.000 description 23
- 239000001257 hydrogen Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- -1 ammonium fluorosilicate Chemical compound 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002221 fluorine Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01009—Fluorine [F]
Description
10 基板処理システム
13 プロセスモジュール
20 クーリングストレージ
29 水分供給機構
Claims (12)
- 基板に弗素を含有するガスを用いた処理を施す第1のステップと、
前記基板を、水分を含有する雰囲気へ晒す第2のステップとを有し、
前記弗素を含有するガスを用いた処理はCOR処理であり、
前記雰囲気に含まれる水分の量は50g/m 3 以上であることを特徴とする基板処理方法。 - 前記第2のステップにおいて、前記基板を前記雰囲気へ所定の時間に亘って晒すことを特徴とする請求項1記載の基板処理方法。
- 前記第2のステップにおいて、前記基板の温度を10℃〜80℃に維持することを特徴とする請求項1又は2に記載の基板処理方法。
- 前記第2のステップにおいて、前記基板の温度を24℃〜60℃に維持することを特徴とする請求項3記載の基板処理方法。
- 前記第2のステップにおいて、前記基板の温度が前記雰囲気の温度より高く、且つ前記雰囲気の温度との差が50℃以内となるように設定されることを特徴とする請求項1記載の基板処理方法。
- 前記雰囲気に含まれる水分の量は88.5g/m3以上であることを特徴とする請求項5記載の基板処理方法。
- 前記第2のステップにおいて、前記基板を前記雰囲気へ少なくとも3分間晒すことを特徴とする請求項6記載の基板処理方法。
- 弗素を含有するガスを用いた処理が施された基板を収容する処理室と、
前記処理室内の雰囲気に水分を含有させる水分含有機構とを備え、
前記弗素を含有するガスを用いた処理はCOR処理であることを特徴とする基板処理装置。 - 前記水分含有機構は、前記雰囲気に含まれる水分の量を50g/m3以上に設定する請求項8記載の基板処理装置。
- 基板に弗素を含有するガスを用いた処理を施す基板処理装置と、
前記弗素を含有するガスを用いた処理が施された基板を、水分を含有する雰囲気へ晒す後処理装置とを備え、
前記弗素を含有するガスを用いた処理はCOR処理であることを特徴とする基板処理システム。 - 前記雰囲気に含まれる水分の量は50g/m3以上であることを特徴とする請求項10記載の基板処理システム。
- 基板に弗素を含有するガスを用いた処理を施す第1のステップと、
前記基板を、水分を含有する雰囲気へ晒す第2のステップとを有し、
前記弗素を含有するガスを用いた処理はCOR処理であり、
前記第2のステップでは、前記第1のステップを実行する処理装置とは別の処理装置において前記基板を前記水分を含有する雰囲気へ晒すことを特徴とする基板処理方法。
Priority Applications (6)
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KR1020170000810A KR101920986B1 (ko) | 2016-01-13 | 2017-01-03 | 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 |
CN201710007284.0A CN107026080B (zh) | 2016-01-13 | 2017-01-05 | 基板处理方法、基板处理装置以及基板处理系统 |
CN202010342111.6A CN111489993A (zh) | 2016-01-13 | 2017-01-05 | 基板处理装置 |
US15/402,419 US10903083B2 (en) | 2016-01-13 | 2017-01-10 | Substrate processing method, substrate processing apparatus and substrate processing system |
TW106100786A TWI719107B (zh) | 2016-01-13 | 2017-01-11 | 基板處理方法、基板處理裝置及基板處理系統 |
US17/097,466 US20210104412A1 (en) | 2016-01-13 | 2020-11-13 | Substrate processing method, substrate processing apparatus and substrate processing system |
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JP2016004719 | 2016-01-13 |
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JP2017126734A JP2017126734A (ja) | 2017-07-20 |
JP6854611B2 true JP6854611B2 (ja) | 2021-04-07 |
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KR (1) | KR101920986B1 (ja) |
CN (2) | CN111489993A (ja) |
TW (1) | TWI719107B (ja) |
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US9768034B1 (en) * | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
JP7137976B2 (ja) * | 2018-07-04 | 2022-09-15 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
KR20220066942A (ko) | 2019-10-04 | 2022-05-24 | 도쿄엘렉트론가부시키가이샤 | 가열 냉각 장치 및 가열 냉각 방법 |
JP7355615B2 (ja) | 2019-11-25 | 2023-10-03 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
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JPH0529292A (ja) * | 1990-11-30 | 1993-02-05 | Dainippon Screen Mfg Co Ltd | 基板表面の洗浄方法 |
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JP3176857B2 (ja) * | 1996-12-04 | 2001-06-18 | 芝浦メカトロニクス株式会社 | 半導体装置の製造方法 |
CN1167497C (zh) * | 1998-12-15 | 2004-09-22 | 高级技术材料公司 | 现场处理废气流的装置和方法 |
JP2004103944A (ja) * | 2002-09-11 | 2004-04-02 | Seiko Epson Corp | アッシング方法、ドライエッチング装置、電気光学装置の製造方法および電気光学装置の製造装置 |
JP5001388B2 (ja) * | 2003-06-24 | 2012-08-15 | 東京エレクトロン株式会社 | 被処理体処理装置の圧力制御方法 |
US20060062914A1 (en) * | 2004-09-21 | 2006-03-23 | Diwakar Garg | Apparatus and process for surface treatment of substrate using an activated reactive gas |
US20090148348A1 (en) * | 2005-08-11 | 2009-06-11 | Eksigent Technologies, Llc | Plastic surfaces and apparatuses for reduced adsorption of solutes and methods of preparing the same |
KR101100466B1 (ko) * | 2005-12-22 | 2011-12-29 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
JP2007227764A (ja) * | 2006-02-24 | 2007-09-06 | Dainippon Screen Mfg Co Ltd | 基板表面処理装置、基板表面処理方法および基板処理装置 |
JP2007243014A (ja) * | 2006-03-10 | 2007-09-20 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
KR100791688B1 (ko) * | 2006-09-11 | 2008-01-03 | 동부일렉트로닉스 주식회사 | 반도체 제조 공정에서의 듀얼 다마신 패턴 형성 방법 |
JP5374039B2 (ja) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
JP5492574B2 (ja) * | 2010-01-08 | 2014-05-14 | 東京エレクトロン株式会社 | 基板のクリーニング方法及び基板のクリーニング装置 |
WO2011105331A1 (ja) * | 2010-02-25 | 2011-09-01 | 積水化学工業株式会社 | エッチング方法及び装置 |
CN103402479B (zh) * | 2011-01-07 | 2017-04-26 | 皇家飞利浦有限公司 | 控制比湿度的保温箱组件及相关控制装置 |
US9653327B2 (en) * | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
JP6531422B2 (ja) * | 2014-03-11 | 2019-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体 |
JP6428466B2 (ja) * | 2014-06-23 | 2018-11-28 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム及び記憶媒体 |
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- 2017-01-05 CN CN202010342111.6A patent/CN111489993A/zh active Pending
- 2017-01-05 CN CN201710007284.0A patent/CN107026080B/zh active Active
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CN111489993A (zh) | 2020-08-04 |
KR20170084993A (ko) | 2017-07-21 |
JP2017126734A (ja) | 2017-07-20 |
CN107026080A (zh) | 2017-08-08 |
KR101920986B1 (ko) | 2018-11-21 |
TW201737292A (zh) | 2017-10-16 |
CN107026080B (zh) | 2020-06-09 |
TWI719107B (zh) | 2021-02-21 |
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