EP1469701A3 - Erhobene Mikrostrukturen - Google Patents

Erhobene Mikrostrukturen Download PDF

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Publication number
EP1469701A3
EP1469701A3 EP04076015A EP04076015A EP1469701A3 EP 1469701 A3 EP1469701 A3 EP 1469701A3 EP 04076015 A EP04076015 A EP 04076015A EP 04076015 A EP04076015 A EP 04076015A EP 1469701 A3 EP1469701 A3 EP 1469701A3
Authority
EP
European Patent Office
Prior art keywords
raised
raised microstructures
film
microstructures
raised micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04076015A
Other languages
English (en)
French (fr)
Other versions
EP1469701A2 (de
EP1469701B1 (de
Inventor
Michael Pederson
Peter V. Loeppert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Knowles Electronics LLC
Original Assignee
Knowles Electronics LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/910,110 external-priority patent/US6987859B2/en
Application filed by Knowles Electronics LLC filed Critical Knowles Electronics LLC
Publication of EP1469701A2 publication Critical patent/EP1469701A2/de
Publication of EP1469701A3 publication Critical patent/EP1469701A3/de
Application granted granted Critical
Publication of EP1469701B1 publication Critical patent/EP1469701B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/006Interconnection of transducer parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Silicon Compounds (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
  • Inorganic Insulating Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Silicon Polymers (AREA)
  • Amplifiers (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
EP04076015A 2000-08-11 2001-08-10 Erhobene Mikrostrukturen Expired - Lifetime EP1469701B1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US63740100A 2000-08-11 2000-08-11
US637401 2000-08-11
US910110 2001-07-20
US09/910,110 US6987859B2 (en) 2001-07-20 2001-07-20 Raised microstructure of silicon based device
EP01959715A EP1310136B1 (de) 2000-08-11 2001-08-10 Breitbandiger miniaturwandler

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP01959715A Division EP1310136B1 (de) 2000-08-11 2001-08-10 Breitbandiger miniaturwandler

Publications (3)

Publication Number Publication Date
EP1469701A2 EP1469701A2 (de) 2004-10-20
EP1469701A3 true EP1469701A3 (de) 2005-11-16
EP1469701B1 EP1469701B1 (de) 2008-04-16

Family

ID=27092826

Family Applications (2)

Application Number Title Priority Date Filing Date
EP01959715A Expired - Lifetime EP1310136B1 (de) 2000-08-11 2001-08-10 Breitbandiger miniaturwandler
EP04076015A Expired - Lifetime EP1469701B1 (de) 2000-08-11 2001-08-10 Erhobene Mikrostrukturen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP01959715A Expired - Lifetime EP1310136B1 (de) 2000-08-11 2001-08-10 Breitbandiger miniaturwandler

Country Status (9)

Country Link
EP (2) EP1310136B1 (de)
JP (3) JP4338395B2 (de)
KR (1) KR100571967B1 (de)
CN (2) CN1498513B (de)
AT (2) ATE321429T1 (de)
AU (1) AU2001281241A1 (de)
DE (2) DE60118208T2 (de)
DK (2) DK1469701T3 (de)
WO (1) WO2002015636A2 (de)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6987859B2 (en) 2001-07-20 2006-01-17 Knowles Electronics, Llc. Raised microstructure of silicon based device
US6535460B2 (en) 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
US7434305B2 (en) 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
US7439616B2 (en) 2000-11-28 2008-10-21 Knowles Electronics, Llc Miniature silicon condenser microphone
US8617934B1 (en) 2000-11-28 2013-12-31 Knowles Electronics, Llc Methods of manufacture of top port multi-part surface mount silicon condenser microphone packages
US7166910B2 (en) 2000-11-28 2007-01-23 Knowles Electronics Llc Miniature silicon condenser microphone
US6859542B2 (en) 2001-05-31 2005-02-22 Sonion Lyngby A/S Method of providing a hydrophobic layer and a condenser microphone having such a layer
US7023066B2 (en) 2001-11-20 2006-04-04 Knowles Electronics, Llc. Silicon microphone
KR100437681B1 (ko) * 2002-04-15 2004-06-30 부전전자부품 주식회사 지향성 마이크로폰
DE10238523B4 (de) 2002-08-22 2014-10-02 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung
US6781231B2 (en) 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
JP2004356707A (ja) * 2003-05-27 2004-12-16 Hosiden Corp 音響検出機構
US7030536B2 (en) * 2003-12-29 2006-04-18 General Electric Company Micromachined ultrasonic transducer cells having compliant support structure
JP4201723B2 (ja) * 2004-02-13 2008-12-24 東京エレクトロン株式会社 容量検知型センサ素子
DE102004020204A1 (de) 2004-04-22 2005-11-10 Epcos Ag Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung
US7608789B2 (en) 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
US7346178B2 (en) * 2004-10-29 2008-03-18 Silicon Matrix Pte. Ltd. Backplateless silicon microphone
US7329933B2 (en) 2004-10-29 2008-02-12 Silicon Matrix Pte. Ltd. Silicon microphone with softly constrained diaphragm
JP4539450B2 (ja) 2004-11-04 2010-09-08 オムロン株式会社 容量型振動センサ及びその製造方法
KR100685092B1 (ko) * 2005-03-14 2007-02-22 주식회사 케이이씨 Mems 공정을 이용한 마이크로폰 및 그 제조 방법
US7449356B2 (en) 2005-04-25 2008-11-11 Analog Devices, Inc. Process of forming a microphone using support member
US7825484B2 (en) 2005-04-25 2010-11-02 Analog Devices, Inc. Micromachined microphone and multisensor and method for producing same
US7885423B2 (en) 2005-04-25 2011-02-08 Analog Devices, Inc. Support apparatus for microphone diaphragm
SG127754A1 (en) * 2005-05-16 2006-12-29 Sensfab Pte Ltd Silicon microphone
DE102005031601B4 (de) * 2005-07-06 2016-03-03 Robert Bosch Gmbh Kapazitives, mikromechanisches Mikrofon
US8351632B2 (en) 2005-08-23 2013-01-08 Analog Devices, Inc. Noise mitigating microphone system and method
US8059842B2 (en) 2005-09-09 2011-11-15 Yamaha Corporation Capacitor microphone
KR100765149B1 (ko) * 2005-10-05 2007-10-15 전자부품연구원 초소형 음향 감지 장치 및 그 제조 방법
KR100785803B1 (ko) * 2005-12-07 2007-12-13 한국전자통신연구원 판 스프링 구조를 갖는 초소형 마이크로 폰, 스피커 및이를 이용한 음성 인식/합성장치
DE102006001493B4 (de) * 2006-01-11 2007-10-18 Austriamicrosystems Ag MEMS-Sensor und Verfahren zur Herstellung
WO2007085017A1 (en) * 2006-01-20 2007-07-26 Analog Devices, Inc. Support apparatus for condenser microphone diaphragm
JP4811035B2 (ja) * 2006-01-31 2011-11-09 パナソニック電工株式会社 音響センサ
JP4737720B2 (ja) * 2006-03-06 2011-08-03 ヤマハ株式会社 ダイヤフラム及びその製造方法並びにそのダイヤフラムを有するコンデンサマイクロホン及びその製造方法
JP2007228345A (ja) * 2006-02-24 2007-09-06 Yamaha Corp コンデンサマイクロホン
JP2007267049A (ja) * 2006-03-29 2007-10-11 Yamaha Corp コンデンサマイクロホン
JP4605470B2 (ja) * 2006-03-31 2011-01-05 ヤマハ株式会社 コンデンサマイクロホン
JP4737719B2 (ja) * 2006-02-24 2011-08-03 ヤマハ株式会社 コンデンサマイクロホン
JP4737721B2 (ja) * 2006-03-10 2011-08-03 ヤマハ株式会社 コンデンサマイクロホン
GB0605576D0 (en) * 2006-03-20 2006-04-26 Oligon Ltd MEMS device
JP4605544B2 (ja) * 2006-03-29 2011-01-05 ヤマハ株式会社 コンデンサマイクロホン
TW200746869A (en) 2006-03-29 2007-12-16 Yamaha Corp Condenser microphone
EP2044802B1 (de) 2006-07-25 2013-03-27 Analog Devices, Inc. Mehrfachmikrofonsystem
JP4567643B2 (ja) * 2006-08-24 2010-10-20 パナソニック株式会社 コンデンサ及びその製造方法
CN101141832B (zh) * 2006-09-06 2011-04-20 歌尔声学股份有限公司 单膜电容式传声器芯片
WO2008044910A1 (en) * 2006-10-11 2008-04-17 Mems Technology Bhd Ultra-low pressure sensor and method of fabrication of same
JP4144640B2 (ja) 2006-10-13 2008-09-03 オムロン株式会社 振動センサの製造方法
US7894622B2 (en) 2006-10-13 2011-02-22 Merry Electronics Co., Ltd. Microphone
EP1931173B1 (de) 2006-12-06 2011-07-20 Electronics and Telecommunications Research Institute Kondensatormikrofon mit Membran mit Biegescharnier und Herstellungsverfahren dafür
US8111871B2 (en) 2007-01-17 2012-02-07 Analog Devices, Inc. Microphone with pressure relief
JP5029147B2 (ja) 2007-06-04 2012-09-19 オムロン株式会社 音響センサ
JP5034692B2 (ja) 2007-06-04 2012-09-26 オムロン株式会社 音響センサ
JP5412031B2 (ja) * 2007-07-24 2014-02-12 ローム株式会社 Memsセンサ
GB2453105B (en) * 2007-09-19 2011-01-12 Wolfson Microelectronics Plc MEMS device and process
GB2453104B (en) * 2007-09-19 2012-04-25 Wolfson Microelectronics Plc Mems device and process
GB2452941B (en) * 2007-09-19 2012-04-11 Wolfson Microelectronics Plc Mems device and process
US20090136064A1 (en) 2007-09-28 2009-05-28 Yamaha Corporation Vibration transducer and manufacturing method therefor
JP2009089100A (ja) * 2007-09-28 2009-04-23 Yamaha Corp 振動トランスデューサ
US8045733B2 (en) * 2007-10-05 2011-10-25 Shandong Gettop Acoustic Co., Ltd. Silicon microphone with enhanced impact proof structure using bonding wires
KR100932754B1 (ko) * 2007-12-12 2009-12-21 에스텍 주식회사 다기능 스피커
US7888754B2 (en) 2007-12-28 2011-02-15 Yamaha Corporation MEMS transducer
WO2009104389A1 (ja) * 2008-02-20 2009-08-27 オムロン株式会社 静電容量型振動センサ
JP5332373B2 (ja) * 2008-07-25 2013-11-06 オムロン株式会社 静電容量型振動センサ
JP4419103B1 (ja) 2008-08-27 2010-02-24 オムロン株式会社 静電容量型振動センサ
JP2010074523A (ja) * 2008-09-18 2010-04-02 Rohm Co Ltd 犠牲層のエッチング方法、memsデバイスの製造方法およびmemsデバイス
JP2010155306A (ja) 2008-12-26 2010-07-15 Panasonic Corp Memsデバイス及びその製造方法
GB2467777B (en) * 2009-02-13 2011-01-12 Wolfson Microelectronics Plc MEMS device and process
US8363860B2 (en) 2009-03-26 2013-01-29 Analog Devices, Inc. MEMS microphone with spring suspended backplate
EP2239961A1 (de) * 2009-04-06 2010-10-13 Nxp B.V. Rückplatte für ein Mikrofon
DE102009026682A1 (de) * 2009-06-03 2010-12-09 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung
JP5513813B2 (ja) * 2009-08-31 2014-06-04 新日本無線株式会社 Memsマイクロフォンおよびその製造方法
CN102056061A (zh) * 2009-10-29 2011-05-11 苏州敏芯微电子技术有限公司 电容式微型硅麦克风及其制造方法
DE102010000666A1 (de) * 2010-01-05 2011-07-07 Robert Bosch GmbH, 70469 Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung
CN102223591B (zh) * 2010-04-19 2015-04-01 联华电子股份有限公司 微机电系统麦克风的晶片级封装结构及其制造方法
JP5402823B2 (ja) 2010-05-13 2014-01-29 オムロン株式会社 音響センサ
JP4947220B2 (ja) 2010-05-13 2012-06-06 オムロン株式会社 音響センサ及びマイクロフォン
JP5400708B2 (ja) 2010-05-27 2014-01-29 オムロン株式会社 音響センサ、音響トランスデューサ、該音響トランスデューサを利用したマイクロフォン、および音響トランスデューサの製造方法
JP2012070120A (ja) * 2010-09-22 2012-04-05 Panasonic Corp センサ
CN102740203A (zh) * 2011-04-06 2012-10-17 美律实业股份有限公司 结合式微机电麦克风及其制造方法
US20120328132A1 (en) * 2011-06-27 2012-12-27 Yunlong Wang Perforated Miniature Silicon Microphone
PH12014500968A1 (en) 2011-11-04 2014-06-09 Knowles Electronics Llc Embedded dielectric as a barrier in an acoustic device and method of manufacture
JP5177309B1 (ja) 2012-01-31 2013-04-03 オムロン株式会社 静電容量型センサ
US9078063B2 (en) 2012-08-10 2015-07-07 Knowles Electronics, Llc Microphone assembly with barrier to prevent contaminant infiltration
DE102012215251A1 (de) * 2012-08-28 2013-03-21 Robert Bosch Gmbh MEMS-Bauelement
JP5987572B2 (ja) 2012-09-11 2016-09-07 オムロン株式会社 音響トランスデューサ
JP5991475B2 (ja) 2012-09-14 2016-09-14 オムロン株式会社 音響トランスデューサ
CN102873020B (zh) * 2012-10-12 2015-05-06 北京七星华创电子股份有限公司 兆声波换能器的连接盖
KR101496817B1 (ko) * 2013-08-09 2015-02-27 삼성전기주식회사 음향 변환기
JP6179300B2 (ja) 2013-09-13 2017-08-16 オムロン株式会社 音響トランスデューサ、およびマイクロホン
JP6345926B2 (ja) * 2013-10-07 2018-06-20 新日本無線株式会社 Mems素子およびその製造方法
US20150162523A1 (en) 2013-12-06 2015-06-11 Murata Manufacturing Co., Ltd. Piezoelectric device
DE102014202009A1 (de) 2014-02-05 2015-08-06 Robert Bosch Gmbh Verfahren und Mittel zum Regeln der elektrischen Vorspannung am Messkondensator eines MEMS-Sensorelements
US20150296306A1 (en) * 2014-04-10 2015-10-15 Knowles Electronics, Llc. Mems motors having insulated substrates
WO2015196468A1 (en) 2014-06-27 2015-12-30 Goertek Inc. Silicon microphone with suspended diaphragm and system with the same
CN105323687A (zh) * 2014-07-14 2016-02-10 北京卓锐微技术有限公司 一种多晶硅层上设置有突起的硅电容麦克风及其制备方法
CN104105041B (zh) * 2014-07-31 2019-01-04 歌尔股份有限公司 硅基mems麦克风及其制作方法
US9743191B2 (en) 2014-10-13 2017-08-22 Knowles Electronics, Llc Acoustic apparatus with diaphragm supported at a discrete number of locations
US9872116B2 (en) 2014-11-24 2018-01-16 Knowles Electronics, Llc Apparatus and method for detecting earphone removal and insertion
US9794661B2 (en) 2015-08-07 2017-10-17 Knowles Electronics, Llc Ingress protection for reducing particle infiltration into acoustic chamber of a MEMS microphone package
US9859879B2 (en) 2015-09-11 2018-01-02 Knowles Electronics, Llc Method and apparatus to clip incoming signals in opposing directions when in an off state
US9401158B1 (en) 2015-09-14 2016-07-26 Knowles Electronics, Llc Microphone signal fusion
CN106841396B (zh) * 2015-12-03 2019-05-28 中国科学院上海微系统与信息技术研究所 硅基电容式声发射传感器及其制备方法
US9779716B2 (en) 2015-12-30 2017-10-03 Knowles Electronics, Llc Occlusion reduction and active noise reduction based on seal quality
US9830930B2 (en) 2015-12-30 2017-11-28 Knowles Electronics, Llc Voice-enhanced awareness mode
US9812149B2 (en) 2016-01-28 2017-11-07 Knowles Electronics, Llc Methods and systems for providing consistency in noise reduction during speech and non-speech periods
KR101807071B1 (ko) 2016-10-06 2017-12-08 현대자동차 주식회사 마이크로폰 및 그 제조 방법
KR101807069B1 (ko) 2016-10-21 2017-12-08 현대자동차 주식회사 마이크로폰 및 그 제조방법
JP6930101B2 (ja) * 2016-12-12 2021-09-01 オムロン株式会社 音響センサ及び静電容量型トランスデューサ
KR102322258B1 (ko) * 2017-05-19 2021-11-04 현대자동차 주식회사 마이크로폰 및 그 제조 방법
DE102017217151B3 (de) 2017-09-27 2019-01-03 Robert Bosch Gmbh Mikromechanischer Sensor
JP7067891B2 (ja) 2017-10-18 2022-05-16 Mmiセミコンダクター株式会社 トランスデューサ
US10870577B2 (en) 2018-10-05 2020-12-22 Knowles Electronics, Llc Methods of forming MEMS diaphragms including corrugations
US10939214B2 (en) 2018-10-05 2021-03-02 Knowles Electronics, Llc Acoustic transducers with a low pressure zone and diaphragms having enhanced compliance
DE112019004970T5 (de) 2018-10-05 2021-06-24 Knowles Electronics, Llc Mikrofonvorrichtung mit Eindringschutz
CN110657880B (zh) * 2019-09-19 2022-05-03 天津大学 一种基于共振空气腔的新型水听器
CN213818153U (zh) * 2019-12-30 2021-07-27 楼氏电子(苏州)有限公司 微机电系统换能器和麦克风组件
CN111405444B (zh) * 2020-03-20 2022-01-25 西人马联合测控(泉州)科技有限公司 一种振膜带孔的电容式麦克风及其制造方法
US12240748B2 (en) 2021-03-21 2025-03-04 Knowles Electronics, Llc MEMS die and MEMS-based sensor
US11528546B2 (en) 2021-04-05 2022-12-13 Knowles Electronics, Llc Sealed vacuum MEMS die
US11540048B2 (en) 2021-04-16 2022-12-27 Knowles Electronics, Llc Reduced noise MEMS device with force feedback
US11649161B2 (en) 2021-07-26 2023-05-16 Knowles Electronics, Llc Diaphragm assembly with non-uniform pillar distribution
US11772961B2 (en) 2021-08-26 2023-10-03 Knowles Electronics, Llc MEMS device with perimeter barometric relief pierce
US12552659B2 (en) 2021-10-06 2026-02-17 Knowles Electronics, Llc MEMS die and MEMS-based sensor
EP4175319A1 (de) * 2021-10-29 2023-05-03 Epinovatech AB Mikroelektromechanische einheit, lautsprecher und mikrofon dafür
US11780726B2 (en) 2021-11-03 2023-10-10 Knowles Electronics, Llc Dual-diaphragm assembly having center constraint
CN217363312U (zh) * 2022-04-25 2022-09-02 瑞声声学科技(深圳)有限公司 Mems麦克风
CN118319356B (zh) * 2024-05-06 2024-09-27 复远数科医疗(杭州)有限公司 一种基于颈部体表呼吸音提取装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360955A (en) * 1978-05-08 1982-11-30 Barry Block Method of making a capacitive force transducer
US4776019A (en) * 1986-05-31 1988-10-04 Horiba, Ltd. Diaphragm for use in condenser microphone type detector
JP2000165999A (ja) * 1998-11-30 2000-06-16 Hosiden Corp 半導体エレクトレットコンデンサーマイクロホン

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938621A (ja) * 1982-08-27 1984-03-02 Nissan Motor Co Ltd 振動分析装置
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPS61105861A (ja) * 1985-06-05 1986-05-23 Nissan Motor Co Ltd 梁構造体を有する半導体装置
NL8702589A (nl) * 1987-10-30 1989-05-16 Microtel Bv Elektro-akoestische transducent van de als elektreet aangeduide soort, en een werkwijze voor het vervaardigen van een dergelijke transducent.
JPH05172843A (ja) * 1991-12-25 1993-07-13 Omron Corp 半導体加速度センサ
DE69325732T2 (de) * 1992-03-18 2000-04-27 Knowles Electronics, Inc. Festkörper-Kondensatormikrofon
US5452268A (en) * 1994-08-12 1995-09-19 The Charles Stark Draper Laboratory, Inc. Acoustic transducer with improved low frequency response

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360955A (en) * 1978-05-08 1982-11-30 Barry Block Method of making a capacitive force transducer
US4776019A (en) * 1986-05-31 1988-10-04 Horiba, Ltd. Diaphragm for use in condenser microphone type detector
JP2000165999A (ja) * 1998-11-30 2000-06-16 Hosiden Corp 半導体エレクトレットコンデンサーマイクロホン

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13) *

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EP1469701A2 (de) 2004-10-20
DE60133679D1 (de) 2008-05-29
JP5049312B2 (ja) 2012-10-17
CN101867858A (zh) 2010-10-20
JP2004506394A (ja) 2004-02-26
KR20030033026A (ko) 2003-04-26
DE60118208T2 (de) 2007-04-12
CN101867858B (zh) 2012-02-22
AU2001281241A1 (en) 2002-02-25
ATE392790T1 (de) 2008-05-15
DK1469701T3 (da) 2008-08-18
JP2007116721A (ja) 2007-05-10
DK1310136T3 (da) 2006-07-31
WO2002015636A3 (en) 2002-10-24
KR100571967B1 (ko) 2006-04-18
DE60133679T2 (de) 2009-06-10
CN1498513A (zh) 2004-05-19
WO2002015636A2 (en) 2002-02-21
JP4338395B2 (ja) 2009-10-07
EP1469701B1 (de) 2008-04-16
JP2009153203A (ja) 2009-07-09
EP1310136A2 (de) 2003-05-14
CN1498513B (zh) 2010-07-14
ATE321429T1 (de) 2006-04-15
EP1310136B1 (de) 2006-03-22
DE60118208D1 (de) 2006-05-11

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