ITTO20010424A0 - Dispositivo laser a base di nanostrutture di silicio. - Google Patents

Dispositivo laser a base di nanostrutture di silicio.

Info

Publication number
ITTO20010424A0
ITTO20010424A0 IT2001TO000424A ITTO20010424A ITTO20010424A0 IT TO20010424 A0 ITTO20010424 A0 IT TO20010424A0 IT 2001TO000424 A IT2001TO000424 A IT 2001TO000424A IT TO20010424 A ITTO20010424 A IT TO20010424A IT TO20010424 A0 ITTO20010424 A0 IT TO20010424A0
Authority
IT
Italy
Prior art keywords
device based
laser device
silicon nanostructures
nanostructures
silicon
Prior art date
Application number
IT2001TO000424A
Other languages
English (en)
Inventor
Negro Luca Dal
Giorgia Franzo'
Zeno Gaburro
Fabio Iacona
Original Assignee
Consiglio Nazionale Ricerche
Univ Catania
Infm Istituto Naz Per La Fisi
Uni Degli Studi Di Trento
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consiglio Nazionale Ricerche, Univ Catania, Infm Istituto Naz Per La Fisi, Uni Degli Studi Di Trento filed Critical Consiglio Nazionale Ricerche
Priority to IT2001TO000424A priority Critical patent/ITTO20010424A1/it
Publication of ITTO20010424A0 publication Critical patent/ITTO20010424A0/it
Priority to US09/989,456 priority patent/US6661035B2/en
Publication of ITTO20010424A1 publication Critical patent/ITTO20010424A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H01S5/3227—Si porous Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT2001TO000424A 2001-05-07 2001-05-07 Dispositivo laser a base di nanostrutture di silicio. ITTO20010424A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2001TO000424A ITTO20010424A1 (it) 2001-05-07 2001-05-07 Dispositivo laser a base di nanostrutture di silicio.
US09/989,456 US6661035B2 (en) 2001-05-07 2001-11-21 Laser device based on silicon nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001TO000424A ITTO20010424A1 (it) 2001-05-07 2001-05-07 Dispositivo laser a base di nanostrutture di silicio.

Publications (2)

Publication Number Publication Date
ITTO20010424A0 true ITTO20010424A0 (it) 2001-05-07
ITTO20010424A1 ITTO20010424A1 (it) 2002-11-07

Family

ID=11458834

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001TO000424A ITTO20010424A1 (it) 2001-05-07 2001-05-07 Dispositivo laser a base di nanostrutture di silicio.

Country Status (2)

Country Link
US (1) US6661035B2 (it)
IT (1) ITTO20010424A1 (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442063B1 (ko) * 2002-01-29 2004-07-30 주식회사 럭스퍼트 상부 증폭방식의 도파로 증폭기
US6853669B2 (en) * 2002-12-10 2005-02-08 Ut-Battelle, Llc Nanocrystal waveguide (NOW) laser
US20040214362A1 (en) 2003-01-22 2004-10-28 Hill Steven E. Doped semiconductor nanocrystal layers and preparation thereof
WO2005024960A1 (en) 2003-09-08 2005-03-17 Group Iv Semiconductor Inc. Solid state white light emitter and display using same
US20060140239A1 (en) * 2004-04-23 2006-06-29 Negro Luca D Silicon rich nitride CMOS-compatible light sources and Si-based laser structures
US20090093074A1 (en) * 2004-04-23 2009-04-09 Jae Hyung Yi Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches
US7163902B2 (en) * 2004-08-25 2007-01-16 Atomic Energy Council-Institute Of Nuclear Energy Research Infra-red light-emitting device and method for preparing the same
KR100734881B1 (ko) * 2005-12-08 2007-07-03 한국전자통신연구원 측면 반사경을 이용한 실리콘 발광소자
TW201017863A (en) * 2008-10-03 2010-05-01 Versitech Ltd Semiconductor color-tunable broadband light sources and full-color microdisplays
FR2979434B1 (fr) 2011-08-24 2013-09-27 Commissariat Energie Atomique Procede de realisation d'un reflecteur optique a nanocristaux de semi-conducteur
US9337395B2 (en) 2012-04-30 2016-05-10 Tubitak Methods for producing new silicon light source and devices
ITTO20120583A1 (it) 2012-07-02 2014-01-03 St Microelectronics Srl Dispositivo optoelettronico integrato con guida d'onda e relativo procedimento di fabbricazione
US9256027B2 (en) 2012-07-02 2016-02-09 Stmicroelectronics S.R.L. Integrated optoelectronic device and system with waveguide and manufacturing process thereof
US10132934B2 (en) 2014-09-17 2018-11-20 Stmicroelectronics S.R.L. Integrated detection device, in particular detector of particles such as particulates or alpha particles
FR3062209B1 (fr) * 2017-01-25 2021-08-27 Commissariat Energie Atomique Detecteur optique de particules

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2288062A (en) 1994-03-24 1995-10-04 Univ Surrey Forming luminescent silicon material and devices
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
US6067307A (en) * 1998-06-12 2000-05-23 Lucent Technologies Inc. Vertical cavity surface emitting laser driving circuit

Also Published As

Publication number Publication date
ITTO20010424A1 (it) 2002-11-07
US20020163003A1 (en) 2002-11-07
US6661035B2 (en) 2003-12-09

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