DE60201464D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE60201464D1
DE60201464D1 DE60201464T DE60201464T DE60201464D1 DE 60201464 D1 DE60201464 D1 DE 60201464D1 DE 60201464 T DE60201464 T DE 60201464T DE 60201464 T DE60201464 T DE 60201464T DE 60201464 D1 DE60201464 D1 DE 60201464D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60201464T
Other languages
English (en)
Other versions
DE60201464T2 (de
Inventor
Masahiro Kito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE60201464D1 publication Critical patent/DE60201464D1/de
Publication of DE60201464T2 publication Critical patent/DE60201464T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60201464T 2001-05-17 2002-05-17 Halbleiterlaser Expired - Fee Related DE60201464T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001147391 2001-05-17
JP2001147391 2001-05-17

Publications (2)

Publication Number Publication Date
DE60201464D1 true DE60201464D1 (de) 2004-11-11
DE60201464T2 DE60201464T2 (de) 2005-02-03

Family

ID=18992888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60201464T Expired - Fee Related DE60201464T2 (de) 2001-05-17 2002-05-17 Halbleiterlaser

Country Status (3)

Country Link
US (1) US6865205B2 (de)
EP (1) EP1263099B1 (de)
DE (1) DE60201464T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361593B1 (ko) * 2000-11-23 2002-11-22 주식회사일진 볼록 요철을 갖는 광학집적회로 소자, 그 제조방법, 그광학집적 회로 소자를 이용하여 제조한 광통신용 송수신장치의 모듈
JP3878868B2 (ja) * 2002-03-01 2007-02-07 シャープ株式会社 ＧａＮ系レーザ素子
DE102008014093B4 (de) * 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
US7995263B1 (en) * 2008-01-17 2011-08-09 Ju-Ai Ruan Transmission and reflection dual operational mode light processing device
JP6390485B2 (ja) * 2015-03-26 2018-09-19 三菱電機株式会社 半導体レーザ装置、半導体レーザ装置の製造方法
JP6654468B2 (ja) * 2016-02-29 2020-02-26 日本ルメンタム株式会社 光送信モジュール

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468850A (en) 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
US5260822A (en) 1992-01-31 1993-11-09 Massachusetts Institute Of Technology Tapered semiconductor laser gain structure with cavity spoiling grooves
JPH06283802A (ja) 1993-03-25 1994-10-07 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置及びその製造方法
US5585957A (en) * 1993-03-25 1996-12-17 Nippon Telegraph And Telephone Corporation Method for producing various semiconductor optical devices of differing optical characteristics
JP2746131B2 (ja) 1993-10-07 1998-04-28 松下電器産業株式会社 半導体レーザおよびその製造方法
JP2937751B2 (ja) 1994-04-28 1999-08-23 日本電気株式会社 光半導体装置の製造方法
JP2865000B2 (ja) 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
DE69635410T2 (de) * 1995-12-28 2006-07-27 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleiterlaser und dessen herstellungsverfahren
JP2000036638A (ja) 1998-07-21 2000-02-02 Fujitsu Ltd 半導体発光装置
JP2000193921A (ja) 1998-12-28 2000-07-14 Nec Corp 変調器集積化レ―ザモジュ―ル
JP3225942B2 (ja) * 1999-01-21 2001-11-05 日本電気株式会社 半導体光素子、その製造方法及び半導体光学装置
JP2000244059A (ja) * 1999-02-23 2000-09-08 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Also Published As

Publication number Publication date
EP1263099B1 (de) 2004-10-06
US6865205B2 (en) 2005-03-08
DE60201464T2 (de) 2005-02-03
US20020172248A1 (en) 2002-11-21
EP1263099A3 (de) 2003-01-15
EP1263099A2 (de) 2002-12-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee