DE60225957D1 - Halbleiteranordnungsträger - Google Patents
HalbleiteranordnungsträgerInfo
- Publication number
- DE60225957D1 DE60225957D1 DE60225957T DE60225957T DE60225957D1 DE 60225957 D1 DE60225957 D1 DE 60225957D1 DE 60225957 T DE60225957 T DE 60225957T DE 60225957 T DE60225957 T DE 60225957T DE 60225957 D1 DE60225957 D1 DE 60225957D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- device carrier
- carrier
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/226—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor using microstructures, e.g. silicon spreading resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001028881A JP3929705B2 (ja) | 2001-02-05 | 2001-02-05 | 半導体装置及びチップキャリア |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60225957D1 true DE60225957D1 (de) | 2008-05-21 |
Family
ID=18893298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60225957T Expired - Lifetime DE60225957D1 (de) | 2001-02-05 | 2002-02-04 | Halbleiteranordnungsträger |
Country Status (4)
Country | Link |
---|---|
US (1) | US6975031B2 (de) |
EP (1) | EP1229315B1 (de) |
JP (1) | JP3929705B2 (de) |
DE (1) | DE60225957D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7196355B2 (en) | 2003-03-07 | 2007-03-27 | Avanex Corporation | Integrated thermal sensor for optoelectronic modules |
FR2852145B1 (fr) * | 2003-03-07 | 2005-05-27 | Cit Alcatel | Module optoelectronique comportant un capteur thermique integre |
US7701988B2 (en) * | 2005-04-20 | 2010-04-20 | Finisar Corporation | Optical transmit assembly including thermally isolated laser, temperature sensor, and temperature driver |
US7706421B2 (en) * | 2005-04-20 | 2010-04-27 | Finisar Corporation | Temperature sensing device patterned on an electro-optic transducer die |
US20060239314A1 (en) * | 2005-04-20 | 2006-10-26 | Hosking Lucy G | Electro-optic transducer die mounted directly upon a temperature sensing device |
US20060237807A1 (en) * | 2005-04-20 | 2006-10-26 | Hosking Lucy G | Electro-optic transducer die including a temperature sensing PN junction diode |
US9172209B2 (en) * | 2007-02-01 | 2015-10-27 | Finisar Corporation | Resistive heating element for enabling laser operation |
US7832944B2 (en) | 2007-11-08 | 2010-11-16 | Finisar Corporation | Optoelectronic subassembly with integral thermoelectric cooler driver |
KR101018278B1 (ko) * | 2008-09-19 | 2011-03-04 | 전자부품연구원 | 파장가변 소자 패키지 |
US9692207B2 (en) | 2011-09-30 | 2017-06-27 | Aurrion, Inc. | Tunable laser with integrated wavelength reference |
DE102012111458B4 (de) * | 2012-11-27 | 2022-12-08 | Tdk Electronics Ag | Halbleitervorrichtung |
JP2015065391A (ja) * | 2013-09-26 | 2015-04-09 | アルプス電気株式会社 | 映像表示装置 |
JP2020009879A (ja) * | 2018-07-06 | 2020-01-16 | 太陽誘電株式会社 | 回路基板および回路モジュール |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2061002B (en) * | 1979-10-11 | 1983-10-19 | Matsushita Electric Ind Co Ltd | Method for making a carbide thin film thermistor |
JPS6370589A (ja) | 1986-09-12 | 1988-03-30 | Nec Corp | 半導体レ−ザモジユ−ル |
DE3906086A1 (de) * | 1988-02-29 | 1989-08-31 | Mitsubishi Electric Corp | Laserdrucker |
JPH03131003A (ja) * | 1989-10-16 | 1991-06-04 | Kobe Steel Ltd | ダイヤモンド薄膜サーミスタ |
JP3035852B2 (ja) | 1990-07-18 | 2000-04-24 | 富士通株式会社 | 半導体レーザモジュール |
US5254968A (en) * | 1992-06-15 | 1993-10-19 | General Motors Corporation | Electrically conductive plastic speed control resistor for an automotive blower motor |
JP3312752B2 (ja) | 1992-08-11 | 2002-08-12 | 石塚電子株式会社 | 薄膜サーミスタ |
JP3175887B2 (ja) * | 1992-10-27 | 2001-06-11 | 株式会社半導体エネルギー研究所 | 測定装置 |
US5466484A (en) * | 1993-09-29 | 1995-11-14 | Motorola, Inc. | Resistor structure and method of setting a resistance value |
US5847436A (en) * | 1994-03-18 | 1998-12-08 | Kabushiki Kaisha Tokai Rika Denki Seisakusho | Bipolar transistor having integrated thermistor shunt |
DE19542162C2 (de) * | 1995-11-11 | 2000-11-23 | Abb Research Ltd | Überstrombegrenzer |
US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
FR2780784B1 (fr) * | 1998-07-06 | 2000-08-11 | Commissariat Energie Atomique | Detecteur thermique a amplification par effet bolometrique |
CN1203295C (zh) * | 1999-03-24 | 2005-05-25 | 石塚电子株式会社 | 热堆式红外线传感器及其制造方法 |
KR100674692B1 (ko) * | 1999-06-03 | 2007-01-26 | 마쯔시다덴기산교 가부시키가이샤 | 박막서미스터소자 및 박막서미스터소자의 제조방법 |
US6455823B1 (en) * | 2000-10-06 | 2002-09-24 | Illinois Tool Works Inc. | Electrical heater with thermistor |
-
2001
- 2001-02-05 JP JP2001028881A patent/JP3929705B2/ja not_active Expired - Lifetime
-
2002
- 2002-02-01 US US10/060,323 patent/US6975031B2/en not_active Expired - Fee Related
- 2002-02-04 EP EP02250736A patent/EP1229315B1/de not_active Expired - Lifetime
- 2002-02-04 DE DE60225957T patent/DE60225957D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1229315A1 (de) | 2002-08-07 |
JP3929705B2 (ja) | 2007-06-13 |
US6975031B2 (en) | 2005-12-13 |
EP1229315B1 (de) | 2008-04-09 |
JP2002231862A (ja) | 2002-08-16 |
US20020105045A1 (en) | 2002-08-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |