DE60033369D1 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
DE60033369D1
DE60033369D1 DE60033369T DE60033369T DE60033369D1 DE 60033369 D1 DE60033369 D1 DE 60033369D1 DE 60033369 T DE60033369 T DE 60033369T DE 60033369 T DE60033369 T DE 60033369T DE 60033369 D1 DE60033369 D1 DE 60033369D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033369T
Other languages
English (en)
Other versions
DE60033369T2 (de
Inventor
Daijiro Inoeu
Ryoji Hiroyama
Kunio Takeuchi
Yasuhiko Nomura
Masayuki Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP37449799A external-priority patent/JP2001189528A/ja
Priority claimed from JP2000092303A external-priority patent/JP3561676B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE60033369D1 publication Critical patent/DE60033369D1/de
Publication of DE60033369T2 publication Critical patent/DE60033369T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE60033369T 1999-12-28 2000-12-22 Halbleiterlaservorrichtung Expired - Lifetime DE60033369T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP37449799A JP2001189528A (ja) 1999-12-28 1999-12-28 半導体レーザ素子
JP37449799 1999-12-28
JP2000092303 2000-03-29
JP2000092303A JP3561676B2 (ja) 2000-03-29 2000-03-29 半導体レーザ素子

Publications (2)

Publication Number Publication Date
DE60033369D1 true DE60033369D1 (de) 2007-03-29
DE60033369T2 DE60033369T2 (de) 2007-11-29

Family

ID=26582593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033369T Expired - Lifetime DE60033369T2 (de) 1999-12-28 2000-12-22 Halbleiterlaservorrichtung

Country Status (5)

Country Link
US (1) US6768755B2 (de)
EP (1) EP1130722B1 (de)
KR (1) KR100734457B1 (de)
CN (1) CN1182637C (de)
DE (1) DE60033369T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6836495B2 (en) * 2003-05-07 2004-12-28 Eastman Kodak Company Vertical cavity laser including inorganic spacer layers
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
WO2016087888A1 (en) * 2014-12-03 2016-06-09 Alpes Lasers Sa Quantum cascade laser with current blocking layers
JP7323783B2 (ja) 2019-07-19 2023-08-09 日亜化学工業株式会社 発光装置の製造方法及び発光装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2997573B2 (ja) * 1991-02-19 2000-01-11 株式会社東芝 半導体レーザ装置
JP2914833B2 (ja) * 1992-09-14 1999-07-05 シャープ株式会社 半導体レーザ
JPH08222801A (ja) 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体レーザ
JPH0983071A (ja) * 1995-09-08 1997-03-28 Rohm Co Ltd 半導体レーザ
US5963572A (en) * 1995-12-28 1999-10-05 Sanyo Electric Co., Ltd. Semiconductor laser device and manufacturing method thereof
JP3429407B2 (ja) * 1996-01-19 2003-07-22 シャープ株式会社 半導体レーザ装置およびその製造方法
TW342545B (en) 1996-03-28 1998-10-11 Sanyo Electric Co Semiconductor laser element and method for designing same
DE69723009T2 (de) * 1996-09-06 2004-05-06 Sanyo Electric Co., Ltd., Moriguchi Halbleiterlaservorrichtung
US6181723B1 (en) * 1997-05-07 2001-01-30 Sharp Kabushiki Kaisha Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same

Also Published As

Publication number Publication date
DE60033369T2 (de) 2007-11-29
CN1182637C (zh) 2004-12-29
EP1130722B1 (de) 2007-02-14
KR20010062730A (ko) 2001-07-07
EP1130722A2 (de) 2001-09-05
US6768755B2 (en) 2004-07-27
US20010006527A1 (en) 2001-07-05
CN1302103A (zh) 2001-07-04
EP1130722A3 (de) 2005-02-09
KR100734457B1 (ko) 2007-07-03

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: INOUE, DAIJIRO, MORIGUCHI-SHI, OSAKA-FU 570-86, JP

Inventor name: HIROYAMA, RYOJI, MORIGUCHI-SHI, OSAKA-FU 570-8, JP

Inventor name: TAKEUCHI, KUNIO, MORIGUCHI-SHI, OSAKA-FU 570-8, JP

Inventor name: NOMURA, YASUHIKO, MORIGUCHI-SHI, OSAKA-FU 570-, JP

Inventor name: HATA, MASAYUKI, MORIGUCHI-SHI, OSAKA-FU 570-86, JP

8364 No opposition during term of opposition