EP1396026A2 - Dispositif de cellules dram comportant des transistors mos verticaux et procede de fabrication - Google Patents
Dispositif de cellules dram comportant des transistors mos verticaux et procede de fabricationInfo
- Publication number
- EP1396026A2 EP1396026A2 EP02740639A EP02740639A EP1396026A2 EP 1396026 A2 EP1396026 A2 EP 1396026A2 EP 02740639 A EP02740639 A EP 02740639A EP 02740639 A EP02740639 A EP 02740639A EP 1396026 A2 EP1396026 A2 EP 1396026A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- mos transistors
- layer
- trenches
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 45
- 239000003990 capacitor Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 210000000352 storage cell Anatomy 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Definitions
- the invention relates to a DRAM cell arrangement with vertical MOS transistors and a method for their production, the transistors not having a so-called floating body, but should be "fully depleted".
- the memory cell of a DRAM cell arrangement that is to say a dynamic semiconductor memory, is currently used almost exclusively as the long-known one-transistor memory cell, which comprises a MOS selection transistor and a capacitor.
- the information of the memory cell is stored in the form of a charge on the capacitor.
- the capacitor is connected to the transistor in such a way that when the transistor is driven via a word line, the charge on the capacitor can be read out via a bit line.
- the general aim is to produce a DRAM cell arrangement that has a high packing density.
- Such a MOS transistor can have a small space requirement regardless of a channel length.
- the aim is to arrange the vertical transistor and the associated capacitor of each memory cell on top of one another on a semiconductor substrate in the vertical direction.
- Each memory cell has a column-shaped, vertically arranged selection transistor which contains a drain region and a source region in a semiconductor substrate column, a vertical region likewise extending between the drain and the source region. fender current channel runs, which is controlled by a control gate electrode, which completely surrounds the substrate column separated by an oxide layer.
- the control gate electrodes of different memory cells for example made of doped polysilicon, are electrically connected to one another and form the word line for driving the selection transistor.
- a particular problem with the known MOS transistor is the columnar channel region isolated from the substrate, in which charge carriers accumulate and e.g. can change the threshold voltage.
- the complete isolation of the active area which is also present, for example, in SOI (silicone-on-insulator) substrates and has several advantages there, accordingly also leads to negative effects, the so-called floating body effects. These effects are caused by the fact that charge carriers generated in the active area cannot flow off. This applies in particular to charge carriers generated in a channel region of a MOS transistor.
- a MOS transistor of the "fully depleted" type which is increasingly desired due to its advantages, appears to be realizable at most in cases where the p-doped channel region, unlike the (planar) standard MOS transistor (in which it is not off the substrate is separated) is limited in any way. This is the case, for example, with the columnar channel region of the known transistor, or also with a planar MOS transistor on an SOI substrate. In these cases, the missing connection due to the isolation but on the other hand, as described above, lead to a situation with a floating body.
- a DRAM cell arrangement and a manufacturing method are known in which the MOS transistors are designed as vertical transistors and in which floating body effects are avoided.
- the transistor there forms a bump-like projection in the substrate with a laterally adjacent gate electrode, the channel region being electrically connected to the gate electrode via a conductive structure on another side of the projection, so that charge carriers generated in the channel region can flow off.
- this known cell arrangement results in a complicated, nested structure, which is correspondingly complex to manufacture.
- the invention is based on the object of creating a DRAM cell arrangement and a method for its production which offers transistors of the fully depleted type, as far as possible without a floating body, and at the same time ensure a simple production process.
- the invention provides a DRAM cell arrangement with vertical MOS transistors, - with a matrix arrangement of memory cells, each having a MOS transistor with an upper source / drain region, a channel region and a lower source / drain region, which as Layers are stacked one above the other and have a capacitor connected to the MOS transistor,
- Memory cell matrix are arranged in rows and columns and the channel regions arranged along one of the columns are parts of a web running horizontally in a substrate,
- the gate electrodes of the MOS transistors which are arranged along one of the rows of the memory cell matrix, are parts of a strip-shaped word line which runs parallel to the row, above the webs, and which engages from above into the trenches formed in the column direction between the webs and fill it up across the width of the word line,
- the basic idea of the invention is, on the one hand, to be able to realize the transistors without further "fully depleted” by the lateral double gates of the vertical transistors, depending on the width and doping of the channel regions, and on the other hand the channel regions, via the webs connecting them, on the substrate edge to be able to contact, so that the charge carriers can flow off.
- a DRAM cell arrangement is created
- each memory cell has a capacitor stacked under the MOS transistor, the capacitor with the lower one
- Source / drain region is electrically connected
- a metal bit line runs parallel to the column, which lies above the word lines and which is electrically connected to the upper source / drain regions of the associated MOS transistors .
- the upper source / drain regions of a column can advantageously be designed as a strip-shaped, coherent region and can be connected together to the corresponding metal bit line.
- the invention further provides a method for producing a DRAM cell arrangement according to claim 1, which comprises the following steps:
- Figure la, 2a, and 3 and 4 sectional views along the section line A-A in Figure lb to illustrate successive process steps in the manufacture of the DRAM cell arrangement according to the invention
- FIGS. 1b and 2c are top views of DRAM cell arrangements produced according to the invention in the process steps according to FIGS. 1a and 2a;
- Figure 2b is a sectional view taken along section line B-B in Figure 2c.
- FIG. 1b An arrangement (matrix) of four memory cells can be seen in FIG. 1b, the strip-shaped word lines 10 (gate) in the view according to FIG strip-shaped, column-defining upper source / drain regions 4 each run above the transistors which are arranged in one of the columns.
- the section through this cell arrangement along the line AA indicated in FIG. 1b is shown in FIG.
- an array of upper n-doped source / drain regions 4 is first produced on the p-silicon layer 3 by implantation.
- further implantations tub array, periphery, etc.
- trench isolation using STI shallow trench isolation
- silicon nitride for example, is deposited, planarized by means of a CMP process and then etched back, so that nitride layers are produced in the trenches 5, which later serve as a covering layer 8.
- the gate oxide 9 is then produced on both sides and above the webs 7, possibly with regard to the transistors can be carried out separately in the cell field and in the periphery.
- the gate oxide 9 can be produced in particular with the aid of a thermally grown oxide layer.
- the strip-shaped word lines 10 are deposited, lithographically structured and etched.
- the conductive material for example doped polysilicon, tungsten, silicon nitride or a layer system with an intermediate tungsten nitride layer, also fills the trenches 5 so that the gate electrodes 11 and 12 arise.
- SiN depositions and etching in particular for the production of spacers, can be carried out.
- a first wafer-bondable auxiliary layer 13 typically an oxide layer (however, a BPSG layer is also possible), can be deposited on the top of the substrate 1 and, if necessary, planarized, so that the production state shown in FIG.
- a first auxiliary carrier substrate 14 is attached or glued to the planarized auxiliary (oxide) layer 13. This can be done by heating the opposite surfaces and then joining them together. After the interfaces have been joined and cooled, an insoluble chemical bond is formed between the auxiliary (oxide) layer 13 and the first auxiliary carrier substrate 14 after a predetermined period of time.
- the processing of the resulting structure is carried out for the further process steps (initially) from the opposite side.
- the entire structure is “turned over” and the substrate 1, which is now on top, is etched away by wet etching, the buried oxide layer 2 advantageously serving as an etching stop.
- the buried oxide layer 2 is further removed, the previously generated cover layer 8, in particular a silicon nitride layer, being used to stop these processes in front of the gate oxide 9.
- FIG. 2 The production state shown in FIG. 2 is thus achieved.
- the basic idea of the invention can be seen most easily in the overview of FIGS. 2a and 2b, which each show a section in mutually perpendicular cutting directions along one of the two lines indicated in the top view according to FIG. 2c.
- the vertical MOS transistors can be clearly seen in FIG. 2a, each comprising an upper and lower source / drain region 4 and 15 and a channel region 6 running vertically therebetween, and the gate oxide 9. Laterally, ie to the left and right of the channel regions 6, gate electrodes 11 and 12 are formed in the trenches 5, which are connected to one another by the strip-shaped word line 10.
- these are vertical transistors with lateral double gates, so that on the one hand, depending on the width and doping of the channel regions 6, it is easily possible to implement the transistors "fully depleted".
- the transistors are connected to one another in the row direction in such a way that each transistor laterally has two gate electrodes 11 and 12, and each gate electrode in a trench 5 can also be assigned to two adjacent transistors.
- the vertical transistors are connected to one another in the column direction, cf. Figure 2b that the channel areas 6 are formed as a continuous web 7.
- the transistors, more precisely the channel regions 6 of the transistors in a column therefore do not form individual silicon columns which are insulated from one another, but instead form a wall-like structure, namely the web 7.
- These structures can either assume a substrate-like character due to their size or in any case open up the possibility of contacting on the substrate edge.
- contact structures 17 and, above, stack capacitors are produced on the front side of the first auxiliary carrier substrate 14.
- the contact structures 17 each connect the lower source / drain region 15 of each transistor to the first electrode 18 of the capacitor stacked under the transistor.
- all conventional embodiments box, cylinder, etc.
- metal electrodes and dielectrics with a very high dielectric constant being preferred.
- capacitors with a simple, low-impedance connection and without any restrictions in the aspect ratio due to the metallization, as would be associated with trench capacitors, are possible.
- a second auxiliary (oxide) layer 21 is in turn deposited above the capacitors and a second auxiliary carrier substrate 22 is attached or glued in a wafer bonding step.
- the entire structure is then turned over again so that metal bit lines 23 and contacts (not shown) can now be produced on the front side of the subcarrier substrate 22 using conventional method steps.
- a memory cell is approximately the size of 4F 2 , the smallest lithographic size being F ⁇ 0.2 ⁇ m.
- the production process for producing the DRAM cell arrangement according to the invention is very simple, especially with regard to lithography (use of stripe masks) and in particular has a very simple metallization process.
- the multiple use of wafer bonding in the process enables the principle advantages of trench technology (simple metallization, easy integration of vertical transistors, since capacitance and metallization are in different directions from the device point of view) and stack technology (process order) descending thermal budget: device, capacitor, metallization).
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10125967A DE10125967C1 (de) | 2001-05-29 | 2001-05-29 | DRAM-Zellanordnung mit vertikalen MOS-Transistoren und Verfahren zu deren Herstellung |
DE10125967 | 2001-05-29 | ||
PCT/EP2002/005651 WO2002097891A2 (fr) | 2001-05-29 | 2002-05-23 | Dispositif de cellules dram comportant des transistors mos verticaux et procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1396026A2 true EP1396026A2 (fr) | 2004-03-10 |
Family
ID=7686407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02740639A Withdrawn EP1396026A2 (fr) | 2001-05-29 | 2002-05-23 | Dispositif de cellules dram comportant des transistors mos verticaux et procede de fabrication |
Country Status (8)
Country | Link |
---|---|
US (2) | US6939763B2 (fr) |
EP (1) | EP1396026A2 (fr) |
JP (1) | JP2004527920A (fr) |
KR (1) | KR100567495B1 (fr) |
CN (1) | CN1290198C (fr) |
DE (1) | DE10125967C1 (fr) |
TW (1) | TW569397B (fr) |
WO (1) | WO2002097891A2 (fr) |
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DE10125967C1 (de) * | 2001-05-29 | 2002-07-11 | Infineon Technologies Ag | DRAM-Zellanordnung mit vertikalen MOS-Transistoren und Verfahren zu deren Herstellung |
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DE10232001A1 (de) * | 2002-07-15 | 2004-02-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines integrierten Halbleiterspeichers |
DE10232002B4 (de) | 2002-07-15 | 2008-12-11 | Qimonda Ag | Verfahren zur selbstjustierten selektiven Kontaktierung von Gate-Elektroden vertikaler Transistoren eines integrierten Halbleiterspeichers und integrierter Halbleiterspeicher |
DE10254160B4 (de) * | 2002-11-20 | 2006-07-20 | Infineon Technologies Ag | Transistorarray und damit hergestellte Halbleiterspeicheranordnung |
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DE10362018B4 (de) | 2003-02-14 | 2007-03-08 | Infineon Technologies Ag | Anordnung und Verfahren zur Herstellung von vertikalen Transistorzellen und transistorgesteuerten Speicherzellen |
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2001
- 2001-05-29 DE DE10125967A patent/DE10125967C1/de not_active Expired - Fee Related
-
2002
- 2002-05-20 TW TW091110504A patent/TW569397B/zh not_active IP Right Cessation
- 2002-05-23 JP JP2003500975A patent/JP2004527920A/ja not_active Ceased
- 2002-05-23 WO PCT/EP2002/005651 patent/WO2002097891A2/fr active Application Filing
- 2002-05-23 EP EP02740639A patent/EP1396026A2/fr not_active Withdrawn
- 2002-05-23 CN CNB028109082A patent/CN1290198C/zh not_active Expired - Fee Related
- 2002-05-23 KR KR1020037015568A patent/KR100567495B1/ko not_active IP Right Cessation
-
2003
- 2003-11-24 US US10/720,730 patent/US6939763B2/en not_active Expired - Fee Related
-
2005
- 2005-06-22 US US11/158,439 patent/US7329916B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
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See references of WO02097891A2 * |
Also Published As
Publication number | Publication date |
---|---|
KR20040005997A (ko) | 2004-01-16 |
CN1290198C (zh) | 2006-12-13 |
JP2004527920A (ja) | 2004-09-09 |
US20050253180A1 (en) | 2005-11-17 |
TW569397B (en) | 2004-01-01 |
US20040259312A1 (en) | 2004-12-23 |
US7329916B2 (en) | 2008-02-12 |
KR100567495B1 (ko) | 2006-04-03 |
US6939763B2 (en) | 2005-09-06 |
CN1513208A (zh) | 2004-07-14 |
WO2002097891A2 (fr) | 2002-12-05 |
DE10125967C1 (de) | 2002-07-11 |
WO2002097891A3 (fr) | 2003-10-09 |
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