DE69628840D1 - Termi-schwellenspannungs-feldeffekttransistor mit kurzer kanallänge - Google Patents

Termi-schwellenspannungs-feldeffekttransistor mit kurzer kanallänge

Info

Publication number
DE69628840D1
DE69628840D1 DE69628840T DE69628840T DE69628840D1 DE 69628840 D1 DE69628840 D1 DE 69628840D1 DE 69628840 T DE69628840 T DE 69628840T DE 69628840 T DE69628840 T DE 69628840T DE 69628840 D1 DE69628840 D1 DE 69628840D1
Authority
DE
Germany
Prior art keywords
termi
threshold voltage
field effect
effect transistor
channel length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69628840T
Other languages
English (en)
Other versions
DE69628840T2 (de
Inventor
William Dennen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thunderbird Technologies Inc
Original Assignee
Thunderbird Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thunderbird Technologies Inc filed Critical Thunderbird Technologies Inc
Application granted granted Critical
Publication of DE69628840D1 publication Critical patent/DE69628840D1/de
Publication of DE69628840T2 publication Critical patent/DE69628840T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69628840T 1995-07-21 1996-07-19 Termi-schwellenspannungs-feldeffekttransistor mit kurzer kanallänge Expired - Lifetime DE69628840T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US505085 1995-07-21
US08/505,085 US5814869A (en) 1992-01-28 1995-07-21 Short channel fermi-threshold field effect transistors
PCT/US1996/011968 WO1997004489A1 (en) 1995-07-21 1996-07-19 Short channel fermi-threshold field effect transistors

Publications (2)

Publication Number Publication Date
DE69628840D1 true DE69628840D1 (de) 2003-07-31
DE69628840T2 DE69628840T2 (de) 2004-05-06

Family

ID=24008940

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69628840T Expired - Lifetime DE69628840T2 (de) 1995-07-21 1996-07-19 Termi-schwellenspannungs-feldeffekttransistor mit kurzer kanallänge

Country Status (9)

Country Link
US (1) US5814869A (de)
EP (1) EP0843898B1 (de)
JP (1) JP4338784B2 (de)
KR (1) KR100417847B1 (de)
AU (1) AU6503996A (de)
CA (1) CA2227011C (de)
DE (1) DE69628840T2 (de)
HK (1) HK1010604A1 (de)
WO (1) WO1997004489A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117000A (ja) * 1997-06-27 1999-01-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW432636B (en) * 1997-09-26 2001-05-01 Thunderbird Tech Inc Metal gate fermi-threshold field effect transistor
US6323520B1 (en) * 1998-07-31 2001-11-27 Vlsi Technology, Inc. Method for forming channel-region doping profile for semiconductor device
US6373094B2 (en) * 1998-09-11 2002-04-16 Texas Instruments Incorporated EEPROM cell using conventional process steps
US20020036328A1 (en) * 1998-11-16 2002-03-28 William R. Richards, Jr. Offset drain fermi-threshold field effect transistors
US6365475B1 (en) * 2000-03-27 2002-04-02 United Microelectronics Corp. Method of forming a MOS transistor
JP3881840B2 (ja) * 2000-11-14 2007-02-14 独立行政法人産業技術総合研究所 半導体装置
US6555872B1 (en) 2000-11-22 2003-04-29 Thunderbird Technologies, Inc. Trench gate fermi-threshold field effect transistors
US6432777B1 (en) 2001-06-06 2002-08-13 International Business Machines Corporation Method for increasing the effective well doping in a MOSFET as the gate length decreases
US20040079997A1 (en) * 2002-10-24 2004-04-29 Noriyuki Miura Semiconductor device and metal-oxide-semiconductor field-effect transistor
EP1565934A1 (de) * 2002-11-29 2005-08-24 Advanced Micro Devices, Inc. Drain- und source-ausdehnung-struktur mit dotierten spacern mit hoher dielektrizitätskonstante
US6867104B2 (en) * 2002-12-28 2005-03-15 Intel Corporation Method to form a structure to decrease area capacitance within a buried insulator device
KR101258864B1 (ko) * 2004-12-07 2013-04-29 썬더버드 테크놀로지스, 인코포레이티드 긴장된 실리콘, 게이트 엔지니어링된 페르미－ｆｅｔ
US20060220112A1 (en) * 2005-04-01 2006-10-05 International Business Machines Corporation Semiconductor device forming method and structure for retarding dopant-enhanced diffusion
TW200739876A (en) * 2005-10-06 2007-10-16 Nxp Bv Electrostatic discharge protection device
US7790527B2 (en) * 2006-02-03 2010-09-07 International Business Machines Corporation High-voltage silicon-on-insulator transistors and methods of manufacturing the same
US9209246B2 (en) 2007-04-12 2015-12-08 The Penn State University Accumulation field effect microelectronic device and process for the formation thereof
WO2008128164A1 (en) * 2007-04-12 2008-10-23 The Penn State Research Foundation Accumulation field effect microelectronic device and process for the formation thereof
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
US20100123206A1 (en) * 2008-11-18 2010-05-20 Thunderbird Technologies, Inc. Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
US10553494B2 (en) * 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown resistant semiconductor apparatus and method of making same

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor
US3872491A (en) * 1973-03-08 1975-03-18 Sprague Electric Co Asymmetrical dual-gate FET
US4042945A (en) * 1974-02-28 1977-08-16 Westinghouse Electric Corporation N-channel MOS transistor
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
US4108686A (en) * 1977-07-22 1978-08-22 Rca Corp. Method of making an insulated gate field effect transistor by implanted double counterdoping
JPS5587483A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Mis type semiconductor device
JPS5587481A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Mis type semiconductor device
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
JPS5691473A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Semiconductor
JPS5710268A (en) * 1980-11-25 1982-01-19 Nec Corp Semiconductor device
JPS5816565A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd 絶縁ゲ−ト形電界効果トランジスタ
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
DE3138747A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Selbstsperrender feldeffekt-transistor des verarmungstyps
USRE32800E (en) * 1981-12-30 1988-12-13 Sgs-Thomson Microelectronics, Inc. Method of making mosfet by multiple implantations followed by a diffusion step
US4491807A (en) * 1982-05-20 1985-01-01 Rca Corporation FET Negative resistance circuits
JPS5929460A (ja) * 1982-08-11 1984-02-16 Seiko Epson Corp 薄膜トランジスタ
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
JPS6153775A (ja) * 1984-08-24 1986-03-17 Oki Electric Ind Co Ltd 半導体集積回路装置
JPS61160975A (ja) * 1985-01-08 1986-07-21 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
JPS61185973A (ja) * 1985-02-13 1986-08-19 Nec Corp 半導体装置
JPS61292358A (ja) * 1985-06-19 1986-12-23 Fujitsu Ltd Ｍｉｓ型電界効果トランジスタの製造方法
US4701775A (en) * 1985-10-21 1987-10-20 Motorola, Inc. Buried n- channel implant for NMOS transistors
JPS62128175A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd 半導体装置
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS62248255A (ja) * 1986-04-21 1987-10-29 Nissan Motor Co Ltd 薄膜トランジスタ
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
JPS6353975A (ja) * 1986-08-22 1988-03-08 Nec Corp Ｍｉｓトランジスタ及びその製造方法
US5192990A (en) * 1986-09-18 1993-03-09 Eastman Kodak Company Output circuit for image sensor
DE3737144A1 (de) * 1986-11-10 1988-05-11 Hewlett Packard Co Metalloxid-halbleiter-feldeffekttransistor (mosfet) und verfahren zu seiner herstellung
DE3789894T2 (de) * 1987-01-05 1994-09-08 Seiko Instr Inc MOS-Feldeffekttransistor und dessen Herstellungsmethode.
US4928156A (en) * 1987-07-13 1990-05-22 Motorola, Inc. N-channel MOS transistors having source/drain regions with germanium
US4907048A (en) * 1987-11-23 1990-03-06 Xerox Corporation Double implanted LDD transistor self-aligned with gate
JPH01214169A (ja) * 1988-02-23 1989-08-28 Nec Corp 半導体装置
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
US4899202A (en) * 1988-07-08 1990-02-06 Texas Instruments Incorporated High performance silicon-on-insulator transistor with body node to source node connection
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
JP2578662B2 (ja) * 1989-05-19 1997-02-05 三洋電機株式会社 半導体装置の製造方法
JPH0714065B2 (ja) * 1990-03-19 1995-02-15 株式会社東芝 Ｍｏｓ型半導体装置及びその製造方法
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5194923A (en) * 1992-01-28 1993-03-16 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
EP0686308B1 (de) * 1993-02-23 2002-01-16 Thunderbird Technologies, Inc. Fermi-schwellenspannungs-feldeffekttransistor mit hohem sättigungsstrom und niedrigem leckstrom
JP2513402B2 (ja) * 1993-05-01 1996-07-03 日本電気株式会社 半導体装置の構造及び製造方法
US5463237A (en) * 1993-11-04 1995-10-31 Victor Company Of Japan, Ltd. MOSFET device having depletion layer

Also Published As

Publication number Publication date
KR100417847B1 (ko) 2004-04-29
HK1010604A1 (en) 1999-06-25
CA2227011C (en) 2007-10-16
DE69628840T2 (de) 2004-05-06
US5814869A (en) 1998-09-29
EP0843898B1 (de) 2003-06-25
EP0843898A1 (de) 1998-05-27
CA2227011A1 (en) 1997-02-06
AU6503996A (en) 1997-02-18
JPH11510312A (ja) 1999-09-07
WO1997004489A1 (en) 1997-02-06
JP4338784B2 (ja) 2009-10-07

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