DE69728858T2 - Kurzkanal-fermi-schwellenspannungsfeldeffekttransistor mit drain-feld-anschlusszone und verfahren zur herstellung - Google Patents

Kurzkanal-fermi-schwellenspannungsfeldeffekttransistor mit drain-feld-anschlusszone und verfahren zur herstellung Download PDF

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Publication number
DE69728858T2
DE69728858T2 DE69728858T DE69728858T DE69728858T2 DE 69728858 T2 DE69728858 T2 DE 69728858T2 DE 69728858 T DE69728858 T DE 69728858T DE 69728858 T DE69728858 T DE 69728858T DE 69728858 T2 DE69728858 T2 DE 69728858T2
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DE
Germany
Prior art keywords
manufacturing
threshold voltage
effect transistor
short channel
connection zone
Prior art date
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Expired - Lifetime
Application number
DE69728858T
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English (en)
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DE69728858D1 (de
Inventor
William Dennen
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Thunderbird Technologies Inc
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Thunderbird Technologies Inc
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Publication of DE69728858D1 publication Critical patent/DE69728858D1/de
Publication of DE69728858T2 publication Critical patent/DE69728858T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69728858T 1996-02-07 1997-02-04 Kurzkanal-fermi-schwellenspannungsfeldeffekttransistor mit drain-feld-anschlusszone und verfahren zur herstellung Expired - Lifetime DE69728858T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/597,711 US5698884A (en) 1996-02-07 1996-02-07 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
PCT/US1997/002108 WO1997029519A1 (en) 1996-02-07 1997-02-04 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

Publications (2)

Publication Number Publication Date
DE69728858D1 DE69728858D1 (de) 2004-06-03
DE69728858T2 true DE69728858T2 (de) 2005-04-21

Family

ID=24392633

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728858T Expired - Lifetime DE69728858T2 (de) 1996-02-07 1997-02-04 Kurzkanal-fermi-schwellenspannungsfeldeffekttransistor mit drain-feld-anschlusszone und verfahren zur herstellung

Country Status (7)

Country Link
US (2) US5698884A (de)
EP (1) EP0879482B1 (de)
JP (1) JP4439593B2 (de)
KR (1) KR100499308B1 (de)
AU (1) AU709509B2 (de)
DE (1) DE69728858T2 (de)
WO (1) WO1997029519A1 (de)

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Also Published As

Publication number Publication date
WO1997029519A1 (en) 1997-08-14
EP0879482B1 (de) 2004-04-28
EP0879482A1 (de) 1998-11-25
AU709509B2 (en) 1999-09-02
US5698884A (en) 1997-12-16
KR100499308B1 (ko) 2005-11-09
AU1955897A (en) 1997-08-28
DE69728858D1 (de) 2004-06-03
KR19990082088A (ko) 1999-11-15
JP2000504881A (ja) 2000-04-18
US5885876A (en) 1999-03-23
JP4439593B2 (ja) 2010-03-24

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