DE69602686T2 - Verfahren zur Herstellung einer Elektrodenstruktur für eine Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Elektrodenstruktur für eine Halbleitervorrichtung

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Publication number
DE69602686T2
DE69602686T2 DE69602686T DE69602686T DE69602686T2 DE 69602686 T2 DE69602686 T2 DE 69602686T2 DE 69602686 T DE69602686 T DE 69602686T DE 69602686 T DE69602686 T DE 69602686T DE 69602686 T2 DE69602686 T2 DE 69602686T2
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DE
Germany
Prior art keywords
manufacturing
semiconductor device
electrode structure
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69602686T
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English (en)
Other versions
DE69602686D1 (de
Inventor
Yoshihiro Bessho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69602686D1 publication Critical patent/DE69602686D1/de
Publication of DE69602686T2 publication Critical patent/DE69602686T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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DE69602686T 1995-07-14 1996-07-15 Verfahren zur Herstellung einer Elektrodenstruktur für eine Halbleitervorrichtung Expired - Lifetime DE69602686T2 (de)

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US20010014523A1 (en) 2001-08-16
KR970008446A (ko) 1997-02-24
KR100236448B1 (ko) 1999-12-15
US6603207B2 (en) 2003-08-05
SG54349A1 (en) 1998-11-16
EP0753890A2 (de) 1997-01-15
EP0753890A3 (de) 1997-03-05
CN1107979C (zh) 2003-05-07
EP0753890B1 (de) 1999-06-02
CN1147150A (zh) 1997-04-09
TW318321B (de) 1997-10-21
US6387794B2 (en) 2002-05-14
DE69602686D1 (de) 1999-07-08
MY118453A (en) 2004-11-30
US20020081830A1 (en) 2002-06-27

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