JPH0360035A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0360035A
JPH0360035A JP1195460A JP19546089A JPH0360035A JP H0360035 A JPH0360035 A JP H0360035A JP 1195460 A JP1195460 A JP 1195460A JP 19546089 A JP19546089 A JP 19546089A JP H0360035 A JPH0360035 A JP H0360035A
Authority
JP
Japan
Prior art keywords
bonding wire
aluminum
semiconductor device
bonding
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1195460A
Other languages
English (en)
Inventor
Kenjirou Mitake
三嶽　健次郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1195460A priority Critical patent/JPH0360035A/ja
Publication of JPH0360035A publication Critical patent/JPH0360035A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はボンディングワイヤで接続される半導体装置に
関し、特にその半導体装置の電極構造に関する。
〔従来の技術〕
従来、この種の半導体装置は、第２図の断面図に示すよ
うに、半導体基板１の電極ポンディングパッド３はアル
ミニウムで構成され、このポンディングパッド３とパッ
ケージの電極とを接続するボンディングワイヤ６は、金
を主成分とする細線より構成され、ポンディングパッド
３に接続されている。
〔発明が解決しようとする課題〕
上述した従来の半導体装置は、ポンディングパッドの表
面がアルミニウムであるため、半導体装置の外部よりボ
ンディングワイヤを伝わって水分が侵入してきた場合に
、水分と半導体基板中のリン成分が反応してリン酸とな
り、ポンディングパッドを溶解してボンディングワイヤ
と半導体装置との電気的接続を無効にしてしまうという
欠点がある。
〔課題を解決するための手段〕
本発明は、半導体基板上の電極にボンディングワイヤが
接続された半導体装置において、前記半導体基板上のア
ルミニウム電極のボンディングワイヤと接続されている
部分以外の部分に酸化アルミニウム層を形成した半導体
装置である。
〔実施例〕
次に本発明について図面を参照して説明する。
第１図は本発明の一実施例の断面図である。１は半導体
基板、２は半導体基板表面に形成された酸化膜、３゛は
アルミニウムのポンディングパッドで、４はＰＳＧある
いはプラズマ窒化膜などのカバー膜である。この半導体
基板１とパッケージとを、ボンディングワイヤ６で接続
した後に、酸化雰囲気（例えば酸素９０％、窒素１０％
）中で４００℃の温度で約１時間酸化する。そうすると
、露出したアルミニウムの表面が酸化アルミニウム５に
なる。
又、本実施例に適用するパッケージは、セラミックパッ
ケージでも樹脂モールドパッケージでもよい、特に樹脂
モールドパッケージの場合は、酸化アルミニウム形成時
にリードフレームにも酸化膜が形成されるが、樹脂モー
ルド後のリードめっき前に、酸化膜を除去することによ
って適用可能である。
〔発明の効果〕
以上説明したように本発明は、ポンディングパッド表面
のボンディングワイヤとの接続部及びカバー膜で覆われ
た部分以外のアルミニウム表面を酸化して酸化アルミニ
ウム層を形成することにより、ボンディングワイヤを伝
わって半導体装置外部より侵入してくる水分でリン酸が
生成してポンディングパッドのアルミニウムが溶解し、
ボンディングワイヤとポンディングパッドの電気的接続
が切断されるという欠点を防ぐ効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例の断面図、第２図は従来の半
導体装置の断面図である。 １・・・半導体基板、２・・・酸化膜、３・・・ポンデ
ィングパッド、４・・・カバー膜、　５・・・酸化アル
ミニウム、６・・・ボンディングワイヤ。

Claims (1)

    【特許請求の範囲】
  1. 半導体基板上の電極にボンディングワイヤが接続された
    半導体装置において、前記半導体基板上のアルミニウム
    電極のボンディングワイヤと接続されている部分以外の
    部分に酸化アルミニウム層を形成したことを特徴とする
    半導体装置。
JP1195460A 1989-07-27 1989-07-27 半導体装置 Pending JPH0360035A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1195460A JPH0360035A (ja) 1989-07-27 1989-07-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1195460A JPH0360035A (ja) 1989-07-27 1989-07-27 半導体装置

Publications (1)

Publication Number Publication Date
JPH0360035A true JPH0360035A (ja) 1991-03-15

Family

ID=16341444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1195460A Pending JPH0360035A (ja) 1989-07-27 1989-07-27 半導体装置

Country Status (1)

Country Link
JP (1) JPH0360035A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0753890A3 (en) * 1995-07-14 1997-03-05 Matsushita Electric Ind Co Ltd Electrode structure for semiconductor device, method of making the same, and mounted body comprising a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0753890A3 (en) * 1995-07-14 1997-03-05 Matsushita Electric Ind Co Ltd Electrode structure for semiconductor device, method of making the same, and mounted body comprising a semiconductor device
US6603207B2 (en) 1995-07-14 2003-08-05 Matsushita Electric Industrial Co., Ltd. Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

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