DE69832134D1 - Verfahren zur Herstellung einer leitenden Elektrode für eine Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer leitenden Elektrode für eine HalbleitervorrichtungInfo
- Publication number
- DE69832134D1 DE69832134D1 DE69832134T DE69832134T DE69832134D1 DE 69832134 D1 DE69832134 D1 DE 69832134D1 DE 69832134 T DE69832134 T DE 69832134T DE 69832134 T DE69832134 T DE 69832134T DE 69832134 D1 DE69832134 D1 DE 69832134D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- conductive electrode
- conductive
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970049799A KR100425147B1 (ko) | 1997-09-29 | 1997-09-29 | 반도체소자의제조방법 |
KR9749799 | 1997-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69832134D1 true DE69832134D1 (de) | 2005-12-08 |
DE69832134T2 DE69832134T2 (de) | 2006-07-20 |
Family
ID=36643428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69832134T Expired - Lifetime DE69832134T2 (de) | 1997-09-29 | 1998-02-02 | Verfahren zur Herstellung einer leitenden Elektrode für eine Halbleitervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6096630A (de) |
EP (1) | EP0905753B1 (de) |
JP (1) | JP2945967B2 (de) |
KR (1) | KR100425147B1 (de) |
CN (1) | CN1104042C (de) |
DE (1) | DE69832134T2 (de) |
TW (1) | TW349247B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195621A (ja) * | 1997-11-05 | 1999-07-21 | Tokyo Electron Ltd | バリアメタル、その形成方法、ゲート電極及びその形成方法 |
US6861356B2 (en) | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
US7829144B2 (en) * | 1997-11-05 | 2010-11-09 | Tokyo Electron Limited | Method of forming a metal film for electrode |
US6682970B1 (en) * | 1998-02-27 | 2004-01-27 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
US7034353B2 (en) | 1998-02-27 | 2006-04-25 | Micron Technology, Inc. | Methods for enhancing capacitors having roughened features to increase charge-storage capacity |
US6259138B1 (en) * | 1998-12-18 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith |
US6545359B1 (en) * | 1998-12-18 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof |
US6265297B1 (en) * | 1999-09-01 | 2001-07-24 | Micron Technology, Inc. | Ammonia passivation of metal gate electrodes to inhibit oxidation of metal |
JP4669108B2 (ja) * | 2000-06-02 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 半導体装置用WSi膜、半導体装置、半導体装置用WSi膜の製造方法、及び半導体装置の製造方法 |
KR100687411B1 (ko) * | 2000-07-19 | 2007-02-26 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 워드라인 형성 방법 |
US6495406B1 (en) * | 2000-08-31 | 2002-12-17 | Micron Technology, Inc. | Method of forming lightly doped drain MOS transistor including forming spacers on gate electrode pattern before exposing gate insulator |
KR100351907B1 (ko) * | 2000-11-17 | 2002-09-12 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성방법 |
DE10123510A1 (de) * | 2001-05-15 | 2002-11-28 | Infineon Technologies Ag | Herstellungsverfahren für ein Halbleiterbauelement |
JP2003168740A (ja) | 2001-09-18 | 2003-06-13 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
US6661044B2 (en) * | 2001-10-22 | 2003-12-09 | Winbond Electronics Corp. | Method of manufacturing MOSEFT and structure thereof |
TW557500B (en) * | 2002-01-23 | 2003-10-11 | Promos Technologies Inc | Method for producing semiconductor component |
US20040142517A1 (en) * | 2003-01-17 | 2004-07-22 | Chih-Wei Chang | Hatted polysilicon gate structure for improving salicide performance and method of forming the same |
KR100497474B1 (ko) * | 2003-06-20 | 2005-07-01 | 주식회사 하이닉스반도체 | 반도체소자의 게이트전극 형성방법 |
US6943097B2 (en) * | 2003-08-19 | 2005-09-13 | International Business Machines Corporation | Atomic layer deposition of metallic contacts, gates and diffusion barriers |
CN1989597A (zh) * | 2004-07-30 | 2007-06-27 | 应用材料股份有限公司 | 薄硅化钨层沉积和栅金属集成 |
US7501673B2 (en) * | 2005-04-04 | 2009-03-10 | Samsung Electronics Co., Ltd. | Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method |
US7439176B2 (en) * | 2005-04-04 | 2008-10-21 | Samsung Electronics Co., Ltd. | Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method |
CN101618578B (zh) * | 2006-04-20 | 2012-07-25 | 住友重机械工业株式会社 | 树脂成形装置 |
CN101447421B (zh) * | 2007-11-28 | 2010-09-22 | 中国科学院微电子研究所 | 一种制备金属栅电极的方法 |
KR101058498B1 (ko) * | 2009-05-19 | 2011-08-23 | 주식회사 하이닉스반도체 | 메모리 소자의 제조방법 |
US9034716B2 (en) | 2013-01-31 | 2015-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
KR101632171B1 (ko) * | 2013-12-31 | 2016-07-01 | 상신브레이크 주식회사 | 어드저스터 포크와 어드저스터 핀을 구비하는 차량용 디스크 브레이크 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
US4443930A (en) * | 1982-11-30 | 1984-04-24 | Ncr Corporation | Manufacturing method of silicide gates and interconnects for integrated circuits |
US4920908A (en) * | 1983-03-29 | 1990-05-01 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
US4829363A (en) * | 1984-04-13 | 1989-05-09 | Fairchild Camera And Instrument Corp. | Structure for inhibiting dopant out-diffusion |
DE3445289A1 (de) * | 1984-12-12 | 1986-06-19 | Basf Ag, 6700 Ludwigshafen | Geformter katalysator fuer heterogen katalysierte reaktionen |
FR2578272B1 (fr) * | 1985-03-01 | 1987-05-22 | Centre Nat Rech Scient | Procede de formation sur un substrat d'une couche de siliciure de tungstene, utilisable notamment pour la realisation de couches d'interconnexion des circuits integres. |
US4766006A (en) * | 1986-05-15 | 1988-08-23 | Varian Associates, Inc. | Low pressure chemical vapor deposition of metal silicide |
US4684542A (en) * | 1986-08-11 | 1987-08-04 | International Business Machines Corporation | Low pressure chemical vapor deposition of tungsten silicide |
FR2622052B1 (fr) * | 1987-10-19 | 1990-02-16 | Air Liquide | Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres |
US5147829A (en) * | 1989-04-19 | 1992-09-15 | University Of Florida Research Foundation | Sol-gel derived SiO2 /oxide power composites and their production |
US4966869A (en) * | 1990-05-04 | 1990-10-30 | Spectrum Cvd, Inc. | Tungsten disilicide CVD |
US5541131A (en) * | 1991-02-01 | 1996-07-30 | Taiwan Semiconductor Manufacturing Co. | Peeling free metal silicide films using ion implantation |
US5268317A (en) * | 1991-11-12 | 1993-12-07 | Siemens Aktiengesellschaft | Method of forming shallow junctions in field effect transistors |
US5278096A (en) * | 1991-12-23 | 1994-01-11 | At&T Bell Laboratories | Transistor fabrication method |
US5231056A (en) * | 1992-01-15 | 1993-07-27 | Micron Technology, Inc. | Tungsten silicide (WSix) deposition process for semiconductor manufacture |
JP3175289B2 (ja) * | 1992-03-30 | 2001-06-11 | ソニー株式会社 | 半導体装置の製造方法 |
KR950009283B1 (ko) * | 1992-08-24 | 1995-08-18 | 삼성전자주식회사 | 반도체장치의 제조방법 |
JPH0684824A (ja) * | 1992-08-31 | 1994-03-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5643633A (en) * | 1992-12-22 | 1997-07-01 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor depostiton |
US5500249A (en) * | 1992-12-22 | 1996-03-19 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
US5364803A (en) * | 1993-06-24 | 1994-11-15 | United Microelectronics Corporation | Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure |
US5338701A (en) * | 1993-11-03 | 1994-08-16 | Taiwan Semiconductor Manufacturing Company | Method for fabrication of w-polycide-to-poly capacitors with high linearity |
US5652183A (en) * | 1994-01-18 | 1997-07-29 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device containing excessive silicon in metal silicide film |
JP2891092B2 (ja) * | 1994-03-07 | 1999-05-17 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2978736B2 (ja) * | 1994-06-21 | 1999-11-15 | 日本電気株式会社 | 半導体装置の製造方法 |
US5425391A (en) * | 1994-09-12 | 1995-06-20 | Suncast Corporation | Stackable hose reel cart |
US5472896A (en) * | 1994-11-14 | 1995-12-05 | United Microelectronics Corp. | Method for fabricating polycide gate MOSFET devices |
EP0746027A3 (de) * | 1995-05-03 | 1998-04-01 | Applied Materials, Inc. | Auf einer integrierten Schaltung hergestellter Polysilizium/Wolframsilizid-Mehrschichtverbund und verbessertes Herstellungsverfahren |
US5604140A (en) * | 1995-05-22 | 1997-02-18 | Lg Semicon, Co. Ltd. | Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same |
US6376372B1 (en) * | 1995-06-02 | 2002-04-23 | Texas Instruments Incorporated | Approaches for mitigating the narrow poly-line effect in silicide formation |
US5882961A (en) * | 1995-09-11 | 1999-03-16 | Motorola, Inc. | Method of manufacturing semiconductor device with reduced charge trapping |
JPH0997771A (ja) * | 1995-09-29 | 1997-04-08 | Sony Corp | 半導体装置の製造方法 |
US5882962A (en) * | 1996-07-29 | 1999-03-16 | Vanguard International Semiconductor Corporation | Method of fabricating MOS transistor having a P+ -polysilicon gate |
US5840607A (en) * | 1996-10-11 | 1998-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming undoped/in-situ doped/undoped polysilicon sandwich for floating gate application |
KR100231904B1 (ko) * | 1997-05-21 | 1999-12-01 | 윤종용 | Ti 실리사이드 제조방법 |
-
1997
- 1997-09-29 KR KR1019970049799A patent/KR100425147B1/ko not_active IP Right Cessation
- 1997-10-13 TW TW086114924A patent/TW349247B/zh not_active IP Right Cessation
- 1997-10-14 US US08/009,493 patent/US6096630A/en not_active Expired - Lifetime
- 1997-11-27 CN CN97126460A patent/CN1104042C/zh not_active Expired - Fee Related
-
1998
- 1998-02-02 DE DE69832134T patent/DE69832134T2/de not_active Expired - Lifetime
- 1998-02-02 EP EP98101749A patent/EP0905753B1/de not_active Expired - Lifetime
- 1998-02-24 JP JP10041728A patent/JP2945967B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0905753A2 (de) | 1999-03-31 |
EP0905753A3 (de) | 1999-04-28 |
US6096630A (en) | 2000-08-01 |
KR19990027358A (ko) | 1999-04-15 |
JPH11111616A (ja) | 1999-04-23 |
EP0905753B1 (de) | 2005-11-02 |
KR100425147B1 (ko) | 2004-05-17 |
CN1104042C (zh) | 2003-03-26 |
CN1213163A (zh) | 1999-04-07 |
DE69832134T2 (de) | 2006-07-20 |
TW349247B (en) | 1999-01-01 |
JP2945967B2 (ja) | 1999-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |