DE19934031B8 - Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zur Herstellung desselben - Google Patents

Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zur Herstellung desselben Download PDF

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Publication number
DE19934031B8
DE19934031B8 DE19934031A DE19934031A DE19934031B8 DE 19934031 B8 DE19934031 B8 DE 19934031B8 DE 19934031 A DE19934031 A DE 19934031A DE 19934031 A DE19934031 A DE 19934031A DE 19934031 B8 DE19934031 B8 DE 19934031B8
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DE
Germany
Prior art keywords
making
same
semiconductor devices
ohmic contact
ohmic
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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DE19934031A
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English (en)
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DE19934031B4 (de
DE19934031A1 (de
Inventor
Chao-Nien Chutung Huang
Chienchia Chiu
Chin-Yuan Chen
Chenn-Shiung Cheng
Kwang Kuo Shih
Charng-Shyang Jong
Jin-Kuo Ho
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Epistar Corp
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Epistar Corp
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Priority to DE19964499A priority Critical patent/DE19964499B4/de
Publication of DE19934031A1 publication Critical patent/DE19934031A1/de
Publication of DE19934031B4 publication Critical patent/DE19934031B4/de
Application granted granted Critical
Publication of DE19934031B8 publication Critical patent/DE19934031B8/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE19934031A 1998-10-26 1999-07-21 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zur Herstellung desselben Expired - Lifetime DE19934031B8 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19964499A DE19964499B4 (de) 1998-10-26 1999-07-21 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zum Herstellen desselben

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW087117694A TW386286B (en) 1998-10-26 1998-10-26 An ohmic contact of semiconductor and the manufacturing method
TW87117694 1998-10-26
DE19964499A DE19964499B4 (de) 1998-10-26 1999-07-21 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zum Herstellen desselben

Publications (3)

Publication Number Publication Date
DE19934031A1 DE19934031A1 (de) 2000-05-04
DE19934031B4 DE19934031B4 (de) 2008-12-11
DE19934031B8 true DE19934031B8 (de) 2009-04-16

Family

ID=21631772

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19934031A Expired - Lifetime DE19934031B8 (de) 1998-10-26 1999-07-21 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zur Herstellung desselben
DE19964499A Expired - Lifetime DE19964499B4 (de) 1998-10-26 1999-07-21 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zum Herstellen desselben

Family Applications After (1)

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DE19964499A Expired - Lifetime DE19964499B4 (de) 1998-10-26 1999-07-21 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zum Herstellen desselben

Country Status (4)

Country Link
US (2) US6319808B1 (de)
JP (1) JP2000195818A (de)
DE (2) DE19934031B8 (de)
TW (1) TW386286B (de)

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JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
DE10060439A1 (de) * 2000-12-05 2002-06-13 Osram Opto Semiconductors Gmbh Kontaktmetallisierung für GaN-basierende Halbleiterstrukturen und Verfahren zu deren Herstellung
US20040248335A1 (en) * 2001-01-09 2004-12-09 Ivan Eliashevich Electrode structures for p-type nitride semiconductores and methods of making same
JP3812366B2 (ja) * 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP3622200B2 (ja) * 2001-07-02 2005-02-23 ソニー株式会社 窒化物半導体の製造方法および半導体素子の製造方法
KR100467316B1 (ko) * 2002-03-20 2005-01-24 학교법인 포항공과대학교 갈륨나이트라이드계 광소자의 ｐ형 오믹 전극 및 그 제조방법
TW200400608A (en) * 2002-06-17 2004-01-01 Kopin Corp Bonding pad for gallium nitride-based light-emitting device
US7002180B2 (en) 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
KR100519753B1 (ko) * 2002-11-15 2005-10-07 삼성전기주식회사 ＧａＮ계 화합물 반도체가 사용된 발광소자의 제조방법
KR100612832B1 (ko) * 2003-05-07 2006-08-18 삼성전자주식회사 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법
KR100707167B1 (ko) * 2003-07-11 2007-04-13 삼성전자주식회사 고성능의 질화갈륨계 광소자 구현을 위한 ｐ형 열전산화물을 형성하는 2원계 및 3원계 합금 또는 고용체박막을 이용한 오믹접촉 형성을 위한 박막전극 및 그제조방법
KR100561841B1 (ko) * 2003-08-23 2006-03-16 삼성전자주식회사 고품위 발광다이오드 및 레이저 다이오드의 구현을 위한질화 갈륨을 포함하는 ｐ형 반도체의 오믹접촉형성을 위한투명박막전극
WO2005029598A1 (en) * 2003-09-22 2005-03-31 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device and electrode for the same
KR100657909B1 (ko) * 2004-11-08 2006-12-14 삼성전기주식회사 화합물 반도체 소자의 전극 형성방법
KR100878433B1 (ko) * 2005-05-18 2009-01-13 삼성전기주식회사 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법
CN101286529A (zh) * 2007-04-13 2008-10-15 群康科技(深圳)有限公司 薄膜晶体管、薄膜晶体管制造方法及液晶显示面板
MX2010003227A (es) * 2007-09-25 2010-04-07 First Solar Inc Dispositivos fotovoltaicos que incluyen una capa interfacial.
DE102009000027A1 (de) * 2009-01-05 2010-07-08 Robert Bosch Gmbh Verfahren zur Herstellung von feinen Strukturen in Dickschichten mittels Diffusion
JP5564815B2 (ja) * 2009-03-31 2014-08-06 サンケン電気株式会社 半導体装置及び半導体装置の製造方法
WO2013161247A1 (ja) * 2012-04-24 2013-10-31 パナソニック株式会社 発光素子の製造方法
US9453878B2 (en) 2013-02-26 2016-09-27 Globalfoundries Inc. Characterization of interface resistance in a multi-layer conductive structure
JP6281383B2 (ja) * 2014-04-02 2018-02-21 株式会社デンソー 半導体素子
KR101980270B1 (ko) * 2017-06-13 2019-05-21 한국과학기술연구원 P형 반도체의 오믹 컨택 형성을 위한 페이스트 및 이를 이용한 p형 반도체의 오믹 컨택 형성 방법

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US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
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JPH10135515A (ja) * 1996-11-02 1998-05-22 Toyoda Gosei Co Ltd ３族窒化物半導体の電極形成方法
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
JPH10270758A (ja) * 1997-03-26 1998-10-09 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体素子

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US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
USRE35665E (en) * 1994-07-25 1997-11-18 Industrial Technology Research Institute Surface light emitting diode with electrically conductive window layer
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JPH10135515A (ja) * 1996-11-02 1998-05-22 Toyoda Gosei Co Ltd ３族窒化物半導体の電極形成方法
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Also Published As

Publication number Publication date
JP2000195818A (ja) 2000-07-14
DE19934031B4 (de) 2008-12-11
US20020185732A1 (en) 2002-12-12
TW386286B (en) 2000-04-01
DE19934031A1 (de) 2000-05-04
DE19964499B4 (de) 2011-02-03
US7061110B2 (en) 2006-06-13
US6319808B1 (en) 2001-11-20

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