DE69934933D1 - Gunndiode ,NRD Leitungsschaltung und Verfahren zur Herstellung - Google Patents

Gunndiode ,NRD Leitungsschaltung und Verfahren zur Herstellung

Info

Publication number
DE69934933D1
DE69934933D1 DE69934933T DE69934933T DE69934933D1 DE 69934933 D1 DE69934933 D1 DE 69934933D1 DE 69934933 T DE69934933 T DE 69934933T DE 69934933 T DE69934933 T DE 69934933T DE 69934933 D1 DE69934933 D1 DE 69934933D1
Authority
DE
Germany
Prior art keywords
gunndiode
manufacture
line circuit
nrd line
nrd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934933T
Other languages
English (en)
Other versions
DE69934933T2 (de
Inventor
Nakagawa Atsushi
Watanabe Kenichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25900698A external-priority patent/JP3946360B2/ja
Priority claimed from JP25900598A external-priority patent/JP3899193B2/ja
Priority claimed from JP28689298A external-priority patent/JP3869131B2/ja
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Publication of DE69934933D1 publication Critical patent/DE69934933D1/de
Application granted granted Critical
Publication of DE69934933T2 publication Critical patent/DE69934933T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/147—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a stripline resonator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
DE69934933T 1998-04-28 1999-04-27 Gunndiode, NRD Leitungsschaltung und Verfahren zur Herstellung Expired - Lifetime DE69934933T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP11853698 1998-04-28
JP11853698 1998-04-28
JP25900698 1998-09-11
JP25900598 1998-09-11
JP25900698A JP3946360B2 (ja) 1998-04-28 1998-09-11 ガンダイオード、その製造方法、およびその実装構造
JP25900598A JP3899193B2 (ja) 1998-09-11 1998-09-11 Ｎｒｄガイドガン発振器
JP28689298 1998-10-08
JP28689298A JP3869131B2 (ja) 1998-10-08 1998-10-08 Ｎｒｄガイドガン発振器

Publications (2)

Publication Number Publication Date
DE69934933D1 true DE69934933D1 (de) 2007-03-15
DE69934933T2 DE69934933T2 (de) 2008-02-14

Family

ID=27470531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934933T Expired - Lifetime DE69934933T2 (de) 1998-04-28 1999-04-27 Gunndiode, NRD Leitungsschaltung und Verfahren zur Herstellung

Country Status (5)

Country Link
US (4) US6344658B1 (de)
EP (4) EP1388901B1 (de)
KR (3) KR100523131B1 (de)
CN (2) CN100364111C (de)
DE (1) DE69934933T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6799820B1 (en) * 1999-05-20 2004-10-05 Seiko Epson Corporation Liquid container having a liquid detecting device
US6832081B1 (en) * 1999-10-13 2004-12-14 Kyocera Corporation Nonradiative dielectric waveguide and a millimeter-wave transmitting/receiving apparatus
US7225670B2 (en) * 2000-05-18 2007-06-05 Seiko Epson Corporation Mounting structure, module, and liquid container
US7137679B2 (en) * 2000-05-18 2006-11-21 Seiko Epson Corporation Ink consumption detecting method, and ink jet recording apparatus
EP1283110B1 (de) * 2000-05-18 2009-03-04 Seiko Epson Corporation Verfahren zur detektion des tintenverbrauchs und tintenstrahlaufzeichnungsvorrichtung
ES2261297T3 (es) * 2000-06-15 2006-11-16 Seiko Epson Corporation Metodo de carga de liquido, recipiente de liquido y metodo para fabricar el mismo.
EP1300245B1 (de) 2000-07-07 2010-04-14 Seiko Epson Corporation Flüssigkeitsbehälter, tintenstrahlaufzeichnungsapparat, vorrichtung und verfahren zur steuerung des apparats, vorrichtung und verfahren zur detektion des flüssigkeitsverbrauchs
WO2002007251A1 (en) * 2000-07-13 2002-01-24 Nrdtech Co. A non-radiative dielectric waveguide circuit positioned between two metal plates which are multi-layered for different sizes of spacers
WO2002011233A1 (en) * 2000-08-02 2002-02-07 Sensing Tech. Corp. Oscillators with the multi-layer non-radiative dielectric waveguide structure
DE10144862B4 (de) * 2001-09-12 2006-06-29 Drägerwerk AG Elektrochemischer Gassensor mit Diamantelektrode
US7613429B2 (en) * 2003-10-15 2009-11-03 Intelligent Cosmos Research Institute NRD guide transceiver, download system using the same, and download memory used for the same
WO2006033772A2 (en) * 2004-08-27 2006-03-30 Electro Ceramic Industries Housing for accommodating microwave devices
KR100876822B1 (ko) * 2006-12-04 2009-01-08 동국대학교 산학협력단 플립칩 패키지용 평면형 건 다이오드
KR100956219B1 (ko) * 2008-02-25 2010-05-04 삼성전기주식회사 확산 방지층을 갖는 저온동시소성 세라믹 기판 및 그 제조방법
US8907473B2 (en) * 2009-02-02 2014-12-09 Estivation Properties Llc Semiconductor device having a diamond substrate heat spreader
US8358003B2 (en) * 2009-06-01 2013-01-22 Electro Ceramic Industries Surface mount electronic device packaging assembly
CN102751385A (zh) * 2012-07-06 2012-10-24 中国科学院微电子研究所 太赫兹的磷化铟耿氏管制备方法
US8981312B1 (en) * 2013-09-10 2015-03-17 Sandia Corporation Photon detector configured to employ the Gunn effect and method of use
CN103682097B (zh) * 2013-11-27 2016-01-13 西安理工大学 一种强场负脉冲耿氏二极管及其制备方法
KR102187434B1 (ko) * 2018-08-06 2020-12-07 동우 화인켐 주식회사 고주파용 필름 전송 선로, 이를 포함하는 안테나 및 안테나가 결합된 화상 표시 장치
CN109742232B (zh) * 2018-11-23 2020-09-25 西北工业大学 一种凹槽阳极平面耿氏二极管及制作方法
CN112103263A (zh) * 2020-08-26 2020-12-18 中国电子科技集团公司第十三研究所 集成电路接地孔和信号连接压点的引出制备方法及结构
CN114552372A (zh) * 2020-11-24 2022-05-27 华星光通科技股份有限公司 具gsg共平面电极的直接调变激光二极管及其制造方法
WO2023091690A1 (en) * 2021-11-19 2023-05-25 Sixpoint Materials, Inc. Terahertz gunn oscillator using gallium nitride

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3668553A (en) * 1970-06-26 1972-06-06 Varian Associates Digitally tuned stripline oscillator
GB1439759A (en) 1972-11-24 1976-06-16 Mullard Ltd Semiconductor devices
US4665413A (en) * 1984-12-19 1987-05-12 Eaton Corporation Edge junction schottky diode
US5170228A (en) * 1988-02-29 1992-12-08 Sumitomo Electric Industries, Ltd. Opto-electronic integrated circuit
US5394154A (en) 1992-09-11 1995-02-28 Honda Giken Kogyo Kabushiki Kaisha High-frequency signal generator and radar module
JP2810322B2 (ja) * 1993-07-16 1998-10-15 株式会社ジャパンエナジー 半導体装置の製造方法
JPH07335953A (ja) * 1994-06-10 1995-12-22 Japan Energy Corp 半導体装置の製造方法
JPH09283818A (ja) * 1996-04-15 1997-10-31 New Japan Radio Co Ltd 半導体装置の製造方法
JP3545887B2 (ja) 1996-09-27 2004-07-21 京セラ株式会社 ガンダイオード及びその製造方法

Also Published As

Publication number Publication date
EP0954039A1 (de) 1999-11-03
KR100503694B1 (ko) 2005-07-25
EP1388901B1 (de) 2013-10-30
EP1388902B1 (de) 2013-06-19
US6369663B1 (en) 2002-04-09
CN100364111C (zh) 2008-01-23
CN1278398C (zh) 2006-10-04
EP1388931A3 (de) 2005-12-07
KR20050061416A (ko) 2005-06-22
EP1388931B1 (de) 2013-07-24
US6344658B1 (en) 2002-02-05
KR19990083495A (ko) 1999-11-25
EP1388901A2 (de) 2004-02-11
EP0954039B1 (de) 2007-01-24
KR20050061415A (ko) 2005-06-22
EP1388901A3 (de) 2005-12-07
EP1388902A3 (de) 2005-12-07
CN1529348A (zh) 2004-09-15
DE69934933T2 (de) 2008-02-14
KR100523131B1 (ko) 2005-10-19
EP1388902A2 (de) 2004-02-11
EP1388931A2 (de) 2004-02-11
US6514832B1 (en) 2003-02-04
US6426511B1 (en) 2002-07-30
CN1236190A (zh) 1999-11-24

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: ATSUSHI, NAKAGAWA, KAMIFUKUOKA, SAITAMA, JP

Inventor name: KENICHI, WATANABE, KAMIFUKUOKA, SAITAMA, JP

8364 No opposition during term of opposition