USRE35665E - Surface light emitting diode with electrically conductive window layer - Google Patents
Surface light emitting diode with electrically conductive window layer Download PDFInfo
- Publication number
- USRE35665E USRE35665E US08/668,601 US66860196A USRE35665E US RE35665 E USRE35665 E US RE35665E US 66860196 A US66860196 A US 66860196A US RE35665 E USRE35665 E US RE35665E
- Authority
- US
- United States
- Prior art keywords
- emitting diode
- light emitting
- window layer
- algainp
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Definitions
- the present invention relates in general to the structure of a light emitting diode (LED), and more particularly, to the structure of a surface emitting LED using an electrically conductive oxide as a transparent window layer.
- LED light emitting diode
- the AlGaInP alloy system has been used for making high quality semiconductor lasers with an emitting wavelength of around 670 nanometer. This alloy system may also be useful for making light emitting diodes (LEDs) for wavelengths ranging from about 560 to 680 nanometers by adjusting the aluminum to gallium ratio in the active region of the device. Increasing the aluminum proportion produces shorter wavelengths. It has also been demonstrated that metalorganic vapor phase epitaxy (MOVPE) provides a means for growing optically efficient AlGaInP heterostructure devices.
- MOVPE metalorganic vapor phase epitaxy
- the device geometry of a conventional LED is simple, as shown in FIG. 1, which is disclosed in ⁇ Prog. Crystal Growth and Charact ⁇ , Vol. 19, 1989, pp. 97-105 by J. P. Andre et al.
- the LED of FIG. 1 is fabricated with a back electrical contact 110, a substrate of n-type GaAs 120, a double heterostructure of AlGaInP 130, which includes a layer of n-type AlGaInP 131, a layer of undoped AlGaInP 132, and a layer of p-type AlGaInP 133, and a front electrical contact 140.
- the undoped AlGaInP 132 is technically referred to as an active layer, and the two neighboring n-type AlGaInP layer 131 and p-type AlGaInP layer 133 are referred to as confining layers.
- the p-type AlGaInP layer 133 which is grown by means of the MOVPE process, is very difficult to dope with acceptors of a concentration higher than 1E18 cm -3 . Moreover, it is a material characteristic that hole mobility is low in p-type AlGaInP semiconductors(which is about 10 to 20 cm 2 *V/sec).
- the electrical resistivity of the p-type AlGaInP layer 132 is comparatively high (i.e., about 0.5 ⁇ -cm) so that current spreading is severely restricted. As a result, the current tends to concentrate under the front electrical contact 140. This is often referred to as a current crowding problem.
- FIG. 2 shows layers that are not changed in appearance from the structure of FIG. 1 (in this FIGURE, layers that are not changed in appearance from the structure of FIG. 1 are labelled with the same reference numerals), in which a semiconductor window layer 200 is grown upon the p-type AlGaInP layer 133.
- the window layer 200 should be selected from materials that have a low electrical resistivity so that current can spread out quickly, and a bandgap higher than that of the AlGaInP layers so that the window layer is transparent to light emitted from the active layer of AlGaInP.
- an AlGaAs material is selected to form the window layer 200.
- the AlGaAs material has the advantage of having a lattice constant compatible with that of the underlying GaAs substrate 12.
- a GaAsP or GaP material is used to form the window layer 200. It is a drawback of using the GaAsP or the GaP material that their lattice constants are not compatible with those of the AlGaInP layers 130 and the GaAs substrate 120. This lattice mismatch causes a high dislocation density that produces less than satisfactory optical performance.
- FIG. 3 shows a third prior art LED disclosed in Photonics Spectra, December 1991, pp. 64-66, by H. Kaplan, and in Jpn. J. Appl. Phys. Vol 31 (1992) pp. 2446-2451, by Hideto Sugawara et al.
- the LED of FIG. 3 in addition to the structure of FIG. 1, is fabricated with a Bragg reflector layer 310, a current-blocking layer 320, and a current spreading layer 330.
- the current spreading layer 330 has a very low electrical resistivity and the current-blocking layer 320 is arranged at a position where it is in alignment with the front electrical contact 140 and thus is spread out laterally by the current-blocking layer 320.
- the reflector layer 310 can be used to prevent the light emitted by the active layers from being absorbed by the GaAs substrate.
- the object of the present invention is to provide a structure of a double hetero-structure surface light-emitting diode that is capable of reducing the current crowding effect.
- Another object of the present invention is to provide a structure of a double hetero-structure AlGaInP surface light-emitting diode using indium-tin oxide as a window layer to obtain higher efficiency and to reduce the manufacturing time.
- Another object of the present invention is to provide a structure of a double hetero-structure AlGaInP surface light-emitting diode having an indium-tin oxide window layer on an n-type GaAs substrate.
- FIG. 1 is a sectional illustration of a first prior art LED
- FIG. 2 is a sectional illustration of a second prior art LED
- FIG. 3 is a sectional illustration of a third prior art LED
- FIG. 4 is a sectional illustration of a fourth prior art LED
- FIG. 5 is a sectional illustration of an LED fabricated in accordance with the present invention.
- FIG. 6 illustrates the relation of the transmittances of the transparent window layer in the present invention to different wavelengths
- FIG. 7 illustrates a comparison of operating current to output power of the double heterostructure LEDs with a window layer and without a window layer
- FIG. 8 illustrates the current spreading in a double heterostructure LEDs with a window layer and without a window layer
- FIG. 9 illustrates the relationship of the operating time and output power of LEDs with a window layer and without a window layer under a 20 mA injected current at room temperature
- FIG. 10 illustrates the relationship of operating time and output power of LEDs in accordance with this invention with an injected current of 20 mA and an operating temperature of 60° C.
- FIG. 5 is a sectional view illustrating the structure of an exemplary LED constructed in accordance with the present invention.
- the LED of FIG. 5 includes a back electrical contact 510, a substrate of n-type GaAs 520, a double heterostructure of AlGaInP 530 (generally referred to as active p-n junction layers), a . .transparent.!. ohmic contact layer 540, a transparent ITO window layer 550, and a front electrical contact 560, wherein the transparent window layer 550 is formed by sputtering a layer of electrically conductive film of about 0.1 to several micrometers in thickness.
- the double heterostructure of AlGaInP 530 includes, as in the LEDs of FIGS. 1-3, a layer of n-type AlGaInP 531, a layer of undoped AlGaInP 532, and a layer of p-type AlGaInP 533.
- GaAsP, GaP or GaAs is used to form the ohmic contact layer 540. Its carrier concentration must be greater than 10 18 cm -3 and its thickness must be greater than 500 ⁇ at least, so as to form good ohmic contact between the double heterostructure of AlGaInP 530 and the transparent window layer 550.
- Tin oxide, indium oxide or indium tin oxide is preferred for forming the transparent window layer 550.
- the preferred thickness of the conductive transparent oxides is between 0.1 micrometer to several micrometers, so that the transmittance is about 90% for light wavelengths in the range from 500 nanometers to 800 nanometers as shown in FIG. 6. Therefore, the transmittance of the window layer is excellent for LEDs in the wavelength range from 555 nanometers (green) to 630 nanometers (red),
- the transparent window layer 550 will not absorb photons emitted from the active p-n junction layers.
- the electrical resistivity of the transparent window layer is only about 3*10 - 4 ⁇ -cm so that the injected current may substantially spread out through the entire diode, thereby contributing to higher power output.
- FIG. 7 illustrates a comparison of operating current to output power of the double heterostructure LEDs with a conductive transparent window layer (curve A) and without a window layer (curve B).
- the light-emitting power and the external quantum efficiency are higher in curve A since the injected current spreads uniformly throughout the entire diode.
- FIG. 8 illustrates current spreading in double heterostructure LEDs with a conductive transparent window layer (curve A) and without a window layer (curve B).
- Curve A conductive transparent window layer
- curve B window layer
- forming an additional transparent window layer using electrically conductive oxides can solve the current crowding problem.
- FIG. 9 illustrates the relationship of operating time and output power of LEDs with a conductive transparent window layer (curve A) and without a window layer (curve B) for an injected current of 20 mA at room temperature.
- the LED according the present invention displays higher output power and better reliability (curve A) as shown in FIG. 9.
- the luminance of the LED in accordance with this invention is close to 2 candela after packaging.
- FIG. 10 illustrates the relationship of operating time and output power of LEDs in accordance with this invention for an injected current of 20 mA and an operating temperature of 60° C.
- the LEDs of the present invention are still stable after a continuous operating period of nearly 1000 hours.
- the ITO window layer 550 can be formed on the p-type AlGaInP layer 533. Therefore, the benefits of the ITO window layer, such as low electrical resistivity and a short manufacturing time, are maintained in the n-type GaAs substrate-based LED. The problem of current crowding is also eliminated due to the ITO window layer 550.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/668,601 USRE35665E (en) | 1994-07-25 | 1996-06-25 | Surface light emitting diode with electrically conductive window layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/279,874 US5481122A (en) | 1994-07-25 | 1994-07-25 | Surface light emitting diode with electrically conductive window layer |
US08/668,601 USRE35665E (en) | 1994-07-25 | 1996-06-25 | Surface light emitting diode with electrically conductive window layer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US08/279,874 Reissue US5481122A (en) | 1994-07-25 | 1994-07-25 | Surface light emitting diode with electrically conductive window layer |
Publications (1)
Publication Number | Publication Date |
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USRE35665E true USRE35665E (en) | 1997-11-18 |
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US08/279,874 Ceased US5481122A (en) | 1994-07-25 | 1994-07-25 | Surface light emitting diode with electrically conductive window layer |
US08/668,601 Expired - Lifetime USRE35665E (en) | 1994-07-25 | 1996-06-25 | Surface light emitting diode with electrically conductive window layer |
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US08/279,874 Ceased US5481122A (en) | 1994-07-25 | 1994-07-25 | Surface light emitting diode with electrically conductive window layer |
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Cited By (12)
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US6207972B1 (en) * | 1999-01-12 | 2001-03-27 | Super Epitaxial Products, Inc. | Light emitting diode with transparent window layer |
US6316792B1 (en) * | 1996-06-05 | 2001-11-13 | Kabushiki Kaisha Toshiba | Compound semiconductor light emitter and a method for manufacturing the same |
US6396862B1 (en) * | 1998-12-02 | 2002-05-28 | Arima Optoelectronics, Corporation | LED with spreading layer |
US6448584B1 (en) * | 2000-01-14 | 2002-09-10 | Shih-Hsiung Chan | Light emitting diode with high luminance and method for making the same |
US20040188791A1 (en) * | 2003-03-31 | 2004-09-30 | Ray-Hua Horng | Light emitting diode and method for producing the same |
US20050133800A1 (en) * | 2003-12-23 | 2005-06-23 | Tessera, Inc. | Solid state lighting device |
EP1551064A2 (en) * | 2003-12-31 | 2005-07-06 | Lg Electronics Inc. | Light emitting device and manufacturing method thereof. |
US7061110B2 (en) | 1998-10-26 | 2006-06-13 | Industrial Technology Research Institute | Ohmic contact to semiconductor devices and method of manufacturing the same |
US20070075327A1 (en) * | 2005-09-30 | 2007-04-05 | Hitachi Cable, Ltd. | Semiconductor light-emitting device |
US20070075319A1 (en) * | 2005-09-30 | 2007-04-05 | Hitachi Cable, Ltd. | Semiconductor light-emitting device with transparent conductive film |
US20070075328A1 (en) * | 2005-09-30 | 2007-04-05 | Hitachi Cable, Ltd. | Semiconductor light-emitting device |
US20070075321A1 (en) * | 2005-09-30 | 2007-04-05 | Hitachi Cable, Ltd. | Semiconductor light-emitting device |
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JP3442864B2 (en) * | 1994-07-08 | 2003-09-02 | 三菱電線工業株式会社 | Semiconductor light emitting device |
US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
US5869849A (en) * | 1995-10-05 | 1999-02-09 | Industry Technology Research Institute | Light-emitting diodes with high illumination |
FR2757320B1 (en) * | 1996-12-16 | 1999-01-15 | Commissariat Energie Atomique | MODULATED TRANSMISSION FREQUENCY MICROLASER |
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US6057562A (en) * | 1997-04-18 | 2000-05-02 | Epistar Corp. | High efficiency light emitting diode with distributed Bragg reflector |
US6410943B1 (en) | 1997-05-14 | 2002-06-25 | Research Triangle Institute | Light emitting device contact layers having substantially equal spreading resistance and method of manufacture |
US5917201A (en) * | 1997-08-07 | 1999-06-29 | Epistar Co. | Light emitting diode with asymmetrical energy band structure |
US6420736B1 (en) | 2000-07-26 | 2002-07-16 | Axt, Inc. | Window for gallium nitride light emitting diode |
US6792026B2 (en) * | 2002-03-26 | 2004-09-14 | Joseph Reid Henrichs | Folded cavity solid-state laser |
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US7041529B2 (en) * | 2002-10-23 | 2006-05-09 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
US20040227141A1 (en) * | 2003-01-30 | 2004-11-18 | Epistar Corporation | Light emitting device having a high resistivity cushion layer |
US20050167681A1 (en) * | 2004-02-04 | 2005-08-04 | Samsung Electronics Co., Ltd. | Electrode layer, light emitting device including the same, and method of forming the electrode layer |
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JP5010129B2 (en) * | 2005-09-30 | 2012-08-29 | 株式会社東芝 | Light emitting diode and manufacturing method thereof |
US7834373B2 (en) * | 2006-12-12 | 2010-11-16 | Hong Kong Applied Science and Technology Research Institute Company Limited | Semiconductor device having current spreading layer |
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Citations (4)
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US4570172A (en) * | 1982-12-21 | 1986-02-11 | Thomson-Csf | Light emitting diode with surface emission |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
US5300791A (en) * | 1992-09-29 | 1994-04-05 | Industrial Technology Research Institute | Light emitting diode |
US5568499A (en) * | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
-
1994
- 1994-07-25 US US08/279,874 patent/US5481122A/en not_active Ceased
-
1996
- 1996-06-25 US US08/668,601 patent/USRE35665E/en not_active Expired - Lifetime
Patent Citations (4)
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US4570172A (en) * | 1982-12-21 | 1986-02-11 | Thomson-Csf | Light emitting diode with surface emission |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
US5300791A (en) * | 1992-09-29 | 1994-04-05 | Industrial Technology Research Institute | Light emitting diode |
US5568499A (en) * | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
Non-Patent Citations (2)
Title |
---|
Andre et al., "III-V Alloys and Their Potential for Visible Emitter Applications", Prog. Crystal Growth and Charact., vol. 19, 1989, Pergamon Press, Great Britain, pp. 97-105. |
Andre et al., III V Alloys and Their Potential for Visible Emitter Applications , Prog. Crystal Growth and Charact., vol. 19, 1989, Pergamon Press, Great Britain, pp. 97 105. * |
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US6316792B1 (en) * | 1996-06-05 | 2001-11-13 | Kabushiki Kaisha Toshiba | Compound semiconductor light emitter and a method for manufacturing the same |
DE19964499B4 (en) * | 1998-10-26 | 2011-02-03 | Epistar Corp. | Ohmic contact to semiconductor devices and a method of making same |
DE19934031B8 (en) * | 1998-10-26 | 2009-04-16 | Epistar Corp. | Ohmic contact to semiconductor devices and a method of making the same |
US7061110B2 (en) | 1998-10-26 | 2006-06-13 | Industrial Technology Research Institute | Ohmic contact to semiconductor devices and method of manufacturing the same |
DE19934031B4 (en) * | 1998-10-26 | 2008-12-11 | Industrial Technology Research Institute, Chutung | Ohmic contact to semiconductor devices and a method of making the same |
US6396862B1 (en) * | 1998-12-02 | 2002-05-28 | Arima Optoelectronics, Corporation | LED with spreading layer |
US6207972B1 (en) * | 1999-01-12 | 2001-03-27 | Super Epitaxial Products, Inc. | Light emitting diode with transparent window layer |
US6448584B1 (en) * | 2000-01-14 | 2002-09-10 | Shih-Hsiung Chan | Light emitting diode with high luminance and method for making the same |
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