JPH04124880A - 半導体式圧力センサ - Google Patents

半導体式圧力センサ

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Publication number
JPH04124880A
JPH04124880A JP2243990A JP24399090A JPH04124880A JP H04124880 A JPH04124880 A JP H04124880A JP 2243990 A JP2243990 A JP 2243990A JP 24399090 A JP24399090 A JP 24399090A JP H04124880 A JPH04124880 A JP H04124880A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
strain gauge
pressure sensor
gauge chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2243990A
Other languages
English (en)
Inventor
Masahiro Kurita
栗田　正弘
Terumi Nakazawa
照美 仲沢
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2243990A priority Critical patent/JPH04124880A/ja
Publication of JPH04124880A publication Critical patent/JPH04124880A/ja
Pending legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体式圧力センサにおいて電極の耐酸性を
向上させる構造に関する。
〔従来の技術〕
特開昭５８−５７７３１号によれば、単層Ａｌ電極の腐
食に対する保護を、Ａｌ電極上へ絶縁膜を形成し、更に
、ワイヤボンディング領域内に金属ワイヤをボンディン
グする。次いで、前記ワイヤボンディング領域内の絶縁
膜で被覆されていないＡ　Ｑ電極表面のみを酸化してい
る。この方法では、絶縁膜を形成する工程が必要で、コ
ストが高くなる問題がある。
一方、特開昭５５−３３０２４号によれば、電極が金薄
膜単層構造である。この構造では、半導体ゲージ基板と
金薄膜電極の密着性が悪く界面剥離する問題がある。
〔発明が解決しようとする課題〕
上記従来技術（特開昭５８−５７７３１号）は、絶縁膜
形成と、Ａｌ電極酸化の両工程を実施するため。
コスト高になる問題を有していた。本発明は、絶縁膜成
形を止めて、Ａｌ電極表面酸化のみで、耐酸性を向上さ
せる。この方法によれば、絶縁膜形成を廃止する分、コ
スト低減がはかれる。
一方、上記従来技術（特開昭５５−３３０２４号）は、
シリコン結晶上へ金薄膜を形成している。前記構造では
、シリコン結晶と金薄膜の線膨張係数の差から界面剥離
する問題を有している。
〔課題を解決するための手段〕 上記目的を達成するため、Ａｌ電極単層は、Ａｌ電極全
表面に厚さ０．１μｍ　−０、３μｍの酸化膜を形成す
る。
また、多層電極構造では、半導体歪ゲージチップと最上
層の金電極の密着性を向上させるため、金電極の下層へ
少なくとも一層以上の薄膜層を設けたものである。
〔作用〕
ＡＲ電極全表面を酸化することにより、表面層に、Ａｆ
ｌｌ！ａ化膜（０，１〜Ｏ’、３μｍ）を形成させる。
これにより、電極の耐酸性向上する。
多層電極は、半導体歪ゲージチップと金電極の線膨張係
数の中間程度の薄膜厚を追加することにより、線膨張係
数差が小さくなり金電極の密着性が向上する。更に、金
は酸に対しても強いので電極の耐酸性が向上する。
〔実施例〕
以下、本発明の実施例を第１図〜第７図により説明する
。
第１図は、圧力センサの全体斜視図でゲージ組１の微小
出力電圧を増幅回路が具備されるハイブリッドＩＣ２で
増幅し、圧力センサの出力電圧としている。
第１の実施例を、第２図〜第４図で説明する。
半導体歪ゲージチップ上へ、４ケの拡散抵抗を配置し、
それをＡΩ電極４でブリッヂに配線する。
前記半導体チップ３の裏面を加工してダイヤフラムを成
形した後、支持台５へ接合する。その後、熱酸化又は、
化学薬品による酸化で、前記Ａｆｌ電極４の表面に膜厚
０．１μｍ〜０．３μｍのＡｌ酸化膜６を成形する。次
に、ケース７へ接着剤８で固定し、ケース７へ設けたリ
ードフレームと前記へ〇電極４間を線材９で接続する。
接続法は超音波ボンディングを行ないＡΩ酸化膜６の線
材９ボンディング部のみＡｌ酸化膜６を破いてＡｌ電極
４へ線材９で接続する。更に、半導体歪ゲージチップ３
上へ軟質レジン１０塗布する。
第２の実施例を、第５図で説明する。半導体歪ゲージチ
ップ３上へ４ケの拡散抵抗を配置し、それをＡｌ電極４
でブリッヂに配線する。前記半導体歪ゲージチップ３の
裏面を加工してダイヤフラムを成形した後、支持台５へ
接合する。更に、熱酸化又は、化学薬品による酸化で、
前記Ａα電極４の表面に膜厚０．１μｍ−０，３μｍの
Ａｌ酸化膜６を形成する。次に、絶縁ベース１３へ形成
した導体膜１１と半導体歪ゲージチップ３上へ形成した
Ａβ電極４を線材９で接続する。接続法は超音波ボンデ
ィングを行ない、Ａｌ酸化膜６の線材９ボンディング部
のみ、Ａｌ、Ｍ化膜６を破いて、Ａｌ電極４へ線材９で
接続する。更に、半導体歪ゲージチップ上へ、軟質レジ
ン１０を塗布する。
第１と第２の実施例によれば、Ａｌ電極の表面を酸化す
る工程のみで、耐酸性向上がはかれる。
第３、及び第４の実施例を、第６図と第７図で説明する
。
第３及び第４の実施例は、第１及び第２の実施例のＡｆ
ｆ電極を３層電極にしたことのみが異なるものである。
本実施例の電極材料の組合せは、例えば下記の組合せが
ある。
Ｎａ　　第１層電極　−第２層電極　−第３層電極１；
チタン（Ｔｉ）−パラジウム（Ｐｄ）−金（Ａｕ）２；
チタン（Ｔｉ）−＝ツケル（Ｎｉ）−金（Ａｕ）３；チ
タン（Ｔ１）−白　金（Ｐｔ）−金（Ａｕ）４；クロム
（Ｃｒ）−白　金（Ｐｔ）−金（Ａｕ）５；クロム（Ｃ
ｒ）−＝ツケル（Ｎ　ｉ　）−金（Ａｕ）上記、５種類
以外でも、最上層を金電極として下層電極に、半導体歪
ゲージチップと金電極の間の線膨張係数材を少なくとも
一層設ければ有効である。
本実施例によれば、電極が密着性と醋酸性の向上がはか
れる。
【図面の簡単な説明】
第１図は圧力センサの全体斜視図、第２図は本発明の第
１実施例の半導体式圧力センサ用ゲージ部を示す図、第
３図は第２図の■−■線部を示す図、第４図はＡｌ電極
４及びＡｆｌ酸化膜の拡大図、第５図は第２実施例のゲ
ージ部の縦断面図、第６図は実施例３と４の半導体歪ゲ
ージチップ３の上面図、第７図は第６図の■−■の拡大
図である。 １・・ゲージ組、２・・・ハイブリッドＩＣｌ３・・・
半導体チップ、４・・Ａｌ電極、５・・支持台、６・・
・Ａｌ酸化膜、７・・ケース、８・・接着剤、９・・線
材、１０・・・軟質レジン、１１・・・導体膜、１２・
・・ケース（２）、１３・絶縁ベース、１４・・・第１
層電極、１５・・・第２層電極、１６・・・第３Ｎ電極
。 帛２図 帛３図

Claims (4)

    【特許請求の範囲】
  1. １．半導体歪ゲージチップ上の電極と、前記歪ゲージチ
    ップを収納するケースのリードフレームとを線材で接続
    された半導体式圧力センサにおいて、前記半導体歪ゲー
    ジチップ上の電極材をＡｌにし、かつ、Ａｌ電極表面へ
    膜厚０．１μｍ〜０．３μｍの酸化膜を形成したことを
    特徴とする半導体式圧力センサ。
  2. ２．半導体歪ゲージチップ上の電極と、前記半導体歪ゲ
    ージチップを接合される絶縁ベース、該絶縁ベースに導
    体膜が形成され、前記半導体歪ゲージチップ上の電極と
    該絶縁ベースの導体膜を線材で接続された半導体式圧力
    センサにおいて、前記半導体歪ゲージチップ上の電極材
    Ａｌにし、かつ、Ａｌ電極表面へ膜厚０．１μｍ〜０．
    ３μｍの酸化膜を形成したことを特徴とする半導体式圧
    力センサ。
  3. ３．電極構造以外は、請求項１と同一の半導体式圧力セ
    ンサにおいて、前記半導体歪ゲージチップ上の電極構造
    を多層構造とし、最上層は必らず金属極にすることを特
    徴とする半導体式圧力センサ。
  4. ４．電極構造以外は、請求項２と同一の半導体式圧力セ
    ンサにおいて、前記半導体歪ゲージチップ上の電極構造
    を多層構造とし、最上層は必らず金属極にすることを特
    徴とする半導体式圧力センサ。
JP2243990A 1990-09-17 1990-09-17 半導体式圧力センサ Pending JPH04124880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2243990A JPH04124880A (ja) 1990-09-17 1990-09-17 半導体式圧力センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2243990A JPH04124880A (ja) 1990-09-17 1990-09-17 半導体式圧力センサ

Publications (1)

Publication Number Publication Date
JPH04124880A true JPH04124880A (ja) 1992-04-24

Family

ID=17112075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2243990A Pending JPH04124880A (ja) 1990-09-17 1990-09-17 半導体式圧力センサ

Country Status (1)

Country Link
JP (1) JPH04124880A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529379A (ja) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp 半導体装置およびそれの製造方法
US6603207B2 (en) 1995-07-14 2003-08-05 Matsushita Electric Industrial Co., Ltd. Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device
USRE38347E1 (en) 1999-08-03 2003-12-16 Tokyo Parts Industrial Co., Ltd. Flat coreless vibrator motor having no output shaft
CN104251758A (zh) * 2013-06-28 2014-12-31 富士电机株式会社 半导体压力传感器装置及其制造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529379A (ja) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp 半導体装置およびそれの製造方法
US6603207B2 (en) 1995-07-14 2003-08-05 Matsushita Electric Industrial Co., Ltd. Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device
USRE38347E1 (en) 1999-08-03 2003-12-16 Tokyo Parts Industrial Co., Ltd. Flat coreless vibrator motor having no output shaft
CN104251758A (zh) * 2013-06-28 2014-12-31 富士电机株式会社 半导体压力传感器装置及其制造方法
JP2015010931A (ja) * 2013-06-28 2015-01-19 富士電機株式会社 半導体圧力センサ装置およびその製造方法

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