DE69527344T2 - Verfahren zur Herstellung einer Halbleiterverbindungsstruktur - Google Patents

Verfahren zur Herstellung einer Halbleiterverbindungsstruktur

Info

Publication number
DE69527344T2
DE69527344T2 DE69527344T DE69527344T DE69527344T2 DE 69527344 T2 DE69527344 T2 DE 69527344T2 DE 69527344 T DE69527344 T DE 69527344T DE 69527344 T DE69527344 T DE 69527344T DE 69527344 T2 DE69527344 T2 DE 69527344T2
Authority
DE
Germany
Prior art keywords
manufacturing
interconnect structure
semiconductor interconnect
semiconductor
interconnect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69527344T
Other languages
English (en)
Other versions
DE69527344D1 (de
Inventor
Robert O Miller
Gregory C Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69527344D1 publication Critical patent/DE69527344D1/de
Publication of DE69527344T2 publication Critical patent/DE69527344T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69527344T 1994-12-29 1995-12-05 Verfahren zur Herstellung einer Halbleiterverbindungsstruktur Expired - Lifetime DE69527344T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36621594A 1994-12-29 1994-12-29

Publications (2)

Publication Number Publication Date
DE69527344D1 DE69527344D1 (de) 2002-08-14
DE69527344T2 true DE69527344T2 (de) 2003-02-27

Family

ID=23442113

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527344T Expired - Lifetime DE69527344T2 (de) 1994-12-29 1995-12-05 Verfahren zur Herstellung einer Halbleiterverbindungsstruktur

Country Status (4)

Country Link
US (1) US5714804A (de)
EP (2) EP1098366A1 (de)
JP (1) JP3955644B2 (de)
DE (1) DE69527344T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016012A (en) * 1996-11-05 2000-01-18 Cypress Semiconductor Corporation Thin liner layer providing reduced via resistance
US6355983B2 (en) * 1997-05-20 2002-03-12 Texas Instruments Incorporated Surface modified interconnects
JPH11233628A (ja) * 1998-02-16 1999-08-27 Mitsubishi Electric Corp コンタクト構造の製造方法
US6870263B1 (en) * 1998-03-31 2005-03-22 Infineon Technologies Ag Device interconnection
US20010055868A1 (en) * 1998-05-22 2001-12-27 Madan Sudhir K. Apparatus and method for metal layer streched conducting plugs
US6372633B1 (en) 1998-07-08 2002-04-16 Applied Materials, Inc. Method and apparatus for forming metal interconnects
US6255226B1 (en) * 1998-12-01 2001-07-03 Philips Semiconductor, Inc. Optimized metal etch process to enable the use of aluminum plugs
JP3408463B2 (ja) * 1999-08-17 2003-05-19 日本電気株式会社 半導体装置の製造方法
US6261950B1 (en) * 1999-10-18 2001-07-17 Infineon Technologies Ag Self-aligned metal caps for interlevel metal connections
US6534866B1 (en) * 2000-04-13 2003-03-18 Micron Technology, Inc. Dual damascene interconnect
JP2002009149A (ja) * 2000-06-20 2002-01-11 Toshiba Corp 半導体装置およびその製造方法
JP2005203476A (ja) * 2004-01-14 2005-07-28 Oki Electric Ind Co Ltd 半導体装置の配線構造及びその製造方法
US7670946B2 (en) * 2006-05-15 2010-03-02 Chartered Semiconductor Manufacturing, Ltd. Methods to eliminate contact plug sidewall slit
US7704885B2 (en) * 2007-05-24 2010-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating the same
JP2009026989A (ja) * 2007-07-20 2009-02-05 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2009176819A (ja) * 2008-01-22 2009-08-06 Elpida Memory Inc 半導体装置及びその製造方法
JP5613388B2 (ja) * 2009-07-23 2014-10-22 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置の製造方法
JP5674433B2 (ja) * 2010-11-17 2015-02-25 ラピスセミコンダクタ株式会社 半導体素子の製造方法
CN104022070B (zh) * 2013-02-28 2016-08-31 中芯国际集成电路制造(上海)有限公司 互连结构的形成方法
CN104022071B (zh) * 2013-02-28 2017-02-08 中芯国际集成电路制造(上海)有限公司 互连结构的形成方法
US9721889B1 (en) * 2016-07-26 2017-08-01 Globalfoundries Inc. Middle of the line (MOL) metal contacts
KR20180068595A (ko) * 2016-12-14 2018-06-22 삼성전자주식회사 반도체 장치
US10186456B2 (en) * 2017-04-20 2019-01-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming contact plugs with reduced corrosion
US10141225B2 (en) 2017-04-28 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates of transistors having reduced resistivity
KR20210066990A (ko) 2019-11-28 2021-06-08 삼성전자주식회사 반도체 소자
KR20220045314A (ko) 2020-10-05 2022-04-12 삼성전자주식회사 반도체 장치 및 이의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563048B1 (fr) 1984-04-13 1986-05-30 Efcis Procede de realisation de contacts d'aluminium a travers une couche isolante epaisse dans un circuit integre
US4824521A (en) * 1987-04-01 1989-04-25 Fairchild Semiconductor Corporation Planarization of metal pillars on uneven substrates
US5070391A (en) * 1989-11-30 1991-12-03 Sgs-Thomson Microelectronics, Inc. Semiconductor contact via structure and method
ES2087968T3 (es) * 1990-03-23 1996-08-01 At & T Corp Interconexion de circuito integrado.
JPH0438875A (ja) * 1990-06-04 1992-02-10 Toshiba Corp 半導体装置およびその製造方法
DE69034137D1 (de) 1990-10-01 2004-06-03 St Microelectronics Srl Herstellung von Kontaktanschlüssen bei der alles überdeckenden CVD-Abscheidung und Rückätzen
US5270254A (en) * 1991-03-27 1993-12-14 Sgs-Thomson Microelectronics, Inc. Integrated circuit metallization with zero contact enclosure requirements and method of making the same
JPH0791824B2 (ja) * 1992-01-22 1995-10-09 強化土エンジニヤリング株式会社 地盤注入工法
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JP2756887B2 (ja) * 1992-03-02 1998-05-25 三菱電機株式会社 半導体装置の導電層接続構造およびその製造方法
JPH05283362A (ja) * 1992-04-03 1993-10-29 Sony Corp 多層配線の形成方法
JPH05347274A (ja) * 1992-06-16 1993-12-27 Sony Corp 配線の形成方法

Also Published As

Publication number Publication date
EP0720228A2 (de) 1996-07-03
JP3955644B2 (ja) 2007-08-08
JPH08236626A (ja) 1996-09-13
EP0720228A3 (de) 1997-02-26
EP1098366A1 (de) 2001-05-09
EP0720228B1 (de) 2002-07-10
US5714804A (en) 1998-02-03
DE69527344D1 (de) 2002-08-14

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