KR970008446A - 반도체장치의 전극구조체와 그 형성방법 및 반도체장치의 실장체 및 반도체 장치 - Google Patents

반도체장치의 전극구조체와 그 형성방법 및 반도체장치의 실장체 및 반도체 장치 Download PDF

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Publication number
KR970008446A
KR970008446A KR1019960028350A KR19960028350A KR970008446A KR 970008446 A KR970008446 A KR 970008446A KR 1019960028350 A KR1019960028350 A KR 1019960028350A KR 19960028350 A KR19960028350 A KR 19960028350A KR 970008446 A KR970008446 A KR 970008446A
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South Korea
Prior art keywords
semiconductor device
electrode
aluminum
oxide film
aluminum oxide
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KR1019960028350A
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English (en)
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KR100236448B1 (ko
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요시히로 벳쇼
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모리시타 요이치
마츠시타덴키산교 가부시키가이샤
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Publication of KR970008446A publication Critical patent/KR970008446A/ko
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Publication of KR100236448B1 publication Critical patent/KR100236448B1/ko

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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

본 발명은 반도체 장치의 회로기판을 용이하고 신뢰성 높게 접속할 수 있는 반도체장치의 전극구조 및 그 형성방법 및 반도체장치의 실장체 및 반도체장치에 관한 것으로, 본 발명은 IC기판(1)상에 알루미늄전극(2)을 형성하는 것이다. 또, IC기판(1)상에 알루미늄전극(2)의 주변부를 덮도록 하여 페시베이션막(5)을 형성하고, 알루미늄전극(2)상에 와이어본딩법으로 돌기전극(3)을 형성한다. 돌기전극(3) 주위에 노출된 알루미늄전극(2)표면에 알루미늄 산화막(4)을 형성하고, 반도체장치의 돌기전극(3) 선단부에 접합층으로서 도전성 접착제(8)를 전사법이나 인쇄법에 의해 도포한다. 반도체장치를 페이스 다운 상태에서 돌기전극(3)이 회로기판(6)의 단자전극(7)상에 당접하도록 위치맞춤을 행하고, 반도체 장치를 회로기판(14)에 적재한다. 이 상태에서 도전성 접착제(8)를 경화시키고, IC기판(1)과 회로기판(6)의 간극에 절연성수지(9)를 충전한다.

Description

반도체장치의 전극구조체와 그 형성방법 및 반도체장치의 실장체 및 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 반도체장치 전극구조의 일실시예를 도시한 단면도이다.

Claims (21)

  1. 페이스 다운 상태에서 회로기판에 실장되는 반도체장치의 전극구조에 있어서, 상기 반도체장치의 알루미늄전극상에 형상된 돌기전극과, 상기 돌기전극 주위에 노출된 알루미늄전극 표면에 형성된 부식방지용 알루미늄 산화막을 구비한 것을 특징으로 하는 반도체장치의 전극구조체.
  2. 제1항에 있어서, 상기 부식방지용 알루미늄 산화막이 알루미늄전극 표면의 자연산화막에 추가로 산화막을 형성하는 것을 특징으로 하는 반도체장치의 전극구조체.
  3. 제1항에 있어서, 상기 알루미늄 산화막의 두께가 알루미늄전극 두께의 5~20%인 것을 특징으로 하는 반도체장치의 전극구조체.
  4. 제1항에 있어서, 상기 알루미늄 산화막의 두께가 0.05~0.2㎛인 것을 특징으로 하는 반도체장치의 전극구조체.
  5. 제1항에 있어서, 상기 돌기전극이 Au로 이루어진 것을 특징으로 하는 반도체장치의 전극구조체.
  6. 페이스 다운 상태에서 회로기판에 실장되는 반도체장치의 전극구조체 형성방법에 있어서, 상기 반도체장치의 알루미늄전극상에 돌기전극을 형성하고, 상기 돌기전극 주위에 노출된 알루미늄전극 표면에 부식방지용 알루미늄 산화막을 형성하는 것을 특징으로 하는 반도체장치의 전극구조체 형성방법.
  7. 제6항에 있어서, 상기 돌기전극이 Au와이어를 이용하여 와이어본딩법에 의해 형성되는 것을 특징으로 하는 반도체장치의 전극구조체 형성방법.
  8. 제6항에 있어서, 상기 알루미늄 산화막이 돌기전극 형성후의 반도체장치를 고온상태에 노출시켜서 형성하는 것을 특징으로 하는 반도체장치의 전극구조체 형성방법.
  9. 제8항에 있어서, 고온상태의 온도범위가 200~300℃인 것을 특징으로 하는 반도체장치의 전극구조 형성방법.
  10. 제9항에 있어서, 상기 알루미늄 산화막이 200~300℃의 온도범위에서 돌기전극을 형성하는 공정에서 동시에 형성되는 것을 특징으로 하는 반도체장치의 전극구조체 형성방법.
  11. 제6항에 있어서, 알루미늄 산화막이 돌기전극 형성후의 반도체장치를 과황산암모늄 또는 과산화수소에 담궈서 형성하는 것을 특징으로 하는 반도체장치의 전극구조 형성방법.
  12. 단자전극을 가진 회로기판과, 페이스 다운 상태에서 상기 회로기판에 실장된 반도체장치를 구비한 반도체장치의 실장체에 있어서, 상기 반도체장치의 알루미늄전극상에 형성된 돌기전극과, 상기 돌기전극주의에 노출된 알루미늄전극 표면에 형성된 부식방지용 알루미늄 산화막을 가진 전극구조체가 접합층을 통해 상기 회로 기판상의 상기 단자전극에 전기적으로 접속되어 있는 것을 특징으로 하는 반도체장치의 실장체.
  13. 제12항에 있어서, 상기 회로기판은 유기계재료를 함유한 기판으로 이루어진 것을 특징으로 하는 반도체장치의 실장체.
  14. 제12항에 있어서, 상기 부식방지용 알루미늄 산화막이 알루미늄전극 표면의 자연산화막에 추가로 산화막을 형성한 것을 특징으로 하는 반도체장치의 전극구조체.
  15. 제12항에 있어서, 상기 접합층이 도전성접착제로 이루어진 것을 특징으로 하는 반도체장치의 실장체.
  16. 제12항에 있어서, 상기 접합층이 땜납으로 이루어진 것을 특징으로 하는 반도체장치의 실장체.
  17. 제12항에 있어서, 상기 반도체장치와 회로기판의 간극이 절연성수지에 의해 충전되어 있는 것을 특징으로 하는 반도체장치의 실장체.
  18. 제12항에 있어서, 상기 알루미늄 산화막의 두께가 알루미늄전극 두께의 5~20%인 것을 특징으로 하는 반도체장치의 실장체.
  19. 제12항에 있어서, 상기 알루미늄 산화막의 두께가 0.05~0.2㎛인 것을 특징으로 하는 반도체장치의 실장체.
  20. 제12항에 있어서, 돌기전극이 Au로 이루어진 것을 특징으로 하는 반도체장치의 실장체.
  21. 회로기판에 실장되는 반도체장치에 있어서, 알루미늄전극과, 상기 알루미늄전극상에 형성된 돌기전극과, 상기 돌기전극 주위에 노출된 알루미늄전극 표면에 형성된 부식방지용 알루미늄 산화막을 구비한 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960028350A 1995-07-14 1996-07-13 반도체장치의 전극구조체와 그 형성방법 및 반도체장치의 실장체 및 반도체 장치 KR100236448B1 (ko)

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