JPS60244035A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60244035A JPS60244035A JP59099228A JP9922884A JPS60244035A JP S60244035 A JPS60244035 A JP S60244035A JP 59099228 A JP59099228 A JP 59099228A JP 9922884 A JP9922884 A JP 9922884A JP S60244035 A JPS60244035 A JP S60244035A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- insulating material
- lead frame
- resin
- rubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2405—Shape
- H01L2224/24051—Conformal with the semiconductor or solid-state device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
- H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/24998—Reinforcing structures, e.g. ramp-like support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔発明の技術分野〕
−1−、−へ
本発明は半導体装置の製造方法に係わり、特KIC(集
積回路)アセンブリ工程のワイヤボンディング方法に関
する。
積回路)アセンブリ工程のワイヤボンディング方法に関
する。
従来のワイヤがンディングは、グラスチックrcを例と
すると、第1図に示すようにリードフレーAJ、チッf
2間を金属ワイヤ3でデンディングし、その徒弟2図に
示すように樹脂4で封止するものであった。図中5はデ
ンディングパッド、6はがンディング台である。
すると、第1図に示すようにリードフレーAJ、チッf
2間を金属ワイヤ3でデンディングし、その徒弟2図に
示すように樹脂4で封止するものであった。図中5はデ
ンディングパッド、6はがンディング台である。
しかしながら上記従来のワイヤボンディング方法では、
リードフレーム1とチッf;to接続に金属ワイヤ3を
使用するが、ポンディングパッド5のサイズ、コストの
面でワイヤ3を太くできず、この部分が弱くなる。また
樹脂4で封止する際、ワイヤ3がリードフレーム1側と
チップ2側の両端以外はどこにも非接触なため、樹脂に
ワイヤ3が流される。このため樹脂4の封止速度が遅く
なる。またワイヤ3に金属を使用するため、ポンディン
グ速度に限度があシ、2− また1本ずつ行なうため、多ピン(端子)になればなる
ほど生産性が劣るものであった。また温度サイクルテス
トの際、樹脂4の伸縮を直接4レット2.ワイヤ3に受
けるので、そのダメージによりワイヤ切れ、ペレットク
ラック等を起こしやすいものであった。
リードフレーム1とチッf;to接続に金属ワイヤ3を
使用するが、ポンディングパッド5のサイズ、コストの
面でワイヤ3を太くできず、この部分が弱くなる。また
樹脂4で封止する際、ワイヤ3がリードフレーム1側と
チップ2側の両端以外はどこにも非接触なため、樹脂に
ワイヤ3が流される。このため樹脂4の封止速度が遅く
なる。またワイヤ3に金属を使用するため、ポンディン
グ速度に限度があシ、2− また1本ずつ行なうため、多ピン(端子)になればなる
ほど生産性が劣るものであった。また温度サイクルテス
トの際、樹脂4の伸縮を直接4レット2.ワイヤ3に受
けるので、そのダメージによりワイヤ切れ、ペレットク
ラック等を起こしやすいものであった。
本発明は上記実情に鑑みてなされたもので、ICのアセ
ンブリ工程のスビードアッゾを図シ、かつその信頼性を
高めることができる半導体装置の製造方法を提供しよう
とするものである。
ンブリ工程のスビードアッゾを図シ、かつその信頼性を
高めることができる半導体装置の製造方法を提供しよう
とするものである。
本発明は上記目的を達成するため、マスキングによシ、
リードフレームとチップとの間に弾性を有する絶縁物を
塗布により形成し、該絶縁物上に前記チップのノヤツド
と前記リードフレームが接続されるように導電性を有す
る配線層を塗布によ多形成したものである。
リードフレームとチップとの間に弾性を有する絶縁物を
塗布により形成し、該絶縁物上に前記チップのノヤツド
と前記リードフレームが接続されるように導電性を有す
る配線層を塗布によ多形成したものである。
〔発明の実施例〕
以下図面を参照して本発明の一実施例を説明する。第3
図〜第5図は同実施例の工程説明図であるが、これは構
成を前記従来のものと対応させた場合の例であるから、
対応個所には同一符号を用いる。第3図に示されるよう
にマスク11でリードフレーム1及びチップ2のパッド
5をマスクし、グル状の絶縁物12を吹き付は等により
塗布する。この絶縁物12については、例えばJCR等
シリコーンゴムを使用できる。次に絶縁物12を加熱等
によシゴム状に硬化させる。次に第4図に示すように配
線になり得る部分以外にマスク13を施こし、導電物1
4を吹き付は等により塗布し、絶縁物12上にパッド5
とリードフレーム1が接続されるように配線層を形成す
る。上記導電物(配線層)14については、例えばゴム
系樹脂に銀などの導電体を添加したものを使用できる。
図〜第5図は同実施例の工程説明図であるが、これは構
成を前記従来のものと対応させた場合の例であるから、
対応個所には同一符号を用いる。第3図に示されるよう
にマスク11でリードフレーム1及びチップ2のパッド
5をマスクし、グル状の絶縁物12を吹き付は等により
塗布する。この絶縁物12については、例えばJCR等
シリコーンゴムを使用できる。次に絶縁物12を加熱等
によシゴム状に硬化させる。次に第4図に示すように配
線になり得る部分以外にマスク13を施こし、導電物1
4を吹き付は等により塗布し、絶縁物12上にパッド5
とリードフレーム1が接続されるように配線層を形成す
る。上記導電物(配線層)14については、例えばゴム
系樹脂に銀などの導電体を添加したものを使用できる。
次に第5図に示す如く樹脂4により封止を行なうもので
ある。
ある。
上記の如き工程によれば、マスク塗布によシ、全ビン(
端子)同時に配線でき、配線14のプリント化を行なっ
たため、特に多ビンのICに対し能率がよい。また配線
14に、宙に浮いたような非接触な個所がないため、従
来のようにワイヤ流れ等が生じる心配がなく、封止の際
樹脂4の流入速度を速くできる。またチッf2上及び周
りに、弾性を有する絶縁物12を設けるため樹脂4から
のダメージが少なく、大型チップのクラックに対し有効
である。
端子)同時に配線でき、配線14のプリント化を行なっ
たため、特に多ビンのICに対し能率がよい。また配線
14に、宙に浮いたような非接触な個所がないため、従
来のようにワイヤ流れ等が生じる心配がなく、封止の際
樹脂4の流入速度を速くできる。またチッf2上及び周
りに、弾性を有する絶縁物12を設けるため樹脂4から
のダメージが少なく、大型チップのクラックに対し有効
である。
第6図は本発明の他の実施例で、時計、電卓用パッケー
ジに本発明を応用したものである。
ジに本発明を応用したものである。
これはプリント配線21を施こしたガラスエポキシ基板
22上に、前実施例の構成を設けたものであるから、同
一個所には同一符号を付して説明を省略する。
22上に、前実施例の構成を設けたものであるから、同
一個所には同一符号を付して説明を省略する。
以上説明した如く本発明によれば、ICのアセンブリ工
程のス♂−ドアyノ化を図り、かつその信頼性を高める
ことができるものである。
程のス♂−ドアyノ化を図り、かつその信頼性を高める
ことができるものである。
第1図、第2図は従来のICのアセンブリ工程図、第3
図ないし第5図は本発明の一実施例の工程説明図、第6
図は本発明の他の実施例の説明図である。 1・・・リードフレーム、2・・・チップ、4・・・樹
脂、5・・・ノやラド、11 、13・・・マスク、1
2・・・絶縁物、14・・・配線層。 出願人伏理人 弁理士 鈴 江 武 彦第1図 3 第3図 1
図ないし第5図は本発明の一実施例の工程説明図、第6
図は本発明の他の実施例の説明図である。 1・・・リードフレーム、2・・・チップ、4・・・樹
脂、5・・・ノやラド、11 、13・・・マスク、1
2・・・絶縁物、14・・・配線層。 出願人伏理人 弁理士 鈴 江 武 彦第1図 3 第3図 1
Claims (3)
- (1) マスキングにより、リードフレームとチップと
の間に絶縁物を塗布によ多形成し、該絶縁物上に前記チ
ップのパッドと前記リードフレームが接続されるように
導電性を有する配線層を塗布によ〕形成したことを特徴
とする半導体装置の製造方法。 - (2)前記絶縁物の塗布は、吹き付は可能な絶縁物を吹
き付けることにより行なうものであることを特徴とする
特許請求の範囲第1項に記載の半導体装置の製造方法。 - (3)前記配線層の塗布は、吹き付は可能な導電物を吹
き付けることにより行なうものであることを特徴とする
特許請求の範囲第1項に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59099228A JPS60244035A (ja) | 1984-05-17 | 1984-05-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59099228A JPS60244035A (ja) | 1984-05-17 | 1984-05-17 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60244035A true JPS60244035A (ja) | 1985-12-03 |
Family
ID=14241809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59099228A Pending JPS60244035A (ja) | 1984-05-17 | 1984-05-17 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60244035A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6146769U (ja) * | 1984-08-30 | 1986-03-28 | 日本電信電話株式会社 | 電子回路形成チツプ搭載装置 |
US5175060A (en) * | 1989-07-01 | 1992-12-29 | Ibiden Co., Ltd. | Leadframe semiconductor-mounting substrate having a roughened adhesive conductor circuit substrate and method of producing the same |
US5605863A (en) * | 1990-08-31 | 1997-02-25 | Texas Instruments Incorporated | Device packaging using heat spreaders and assisted deposition of wire bonds |
JP2002231736A (ja) * | 2001-01-31 | 2002-08-16 | Toppan Forms Co Ltd | Icチップを実装したアンテナの形成方法 |
JP2007510301A (ja) * | 2003-10-29 | 2007-04-19 | コンダクティブ・インクジェット・テクノロジー・リミテッド | 部品の電気的接続 |
US7230341B2 (en) | 2003-03-13 | 2007-06-12 | Seiko Epson Corporation | Electronic device and method of manufacturing the same, circuit board, and electronic instrument |
JP2015012165A (ja) * | 2013-06-28 | 2015-01-19 | 富士機械製造株式会社 | 回路機器製造方法および、成形用の型 |
-
1984
- 1984-05-17 JP JP59099228A patent/JPS60244035A/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6146769U (ja) * | 1984-08-30 | 1986-03-28 | 日本電信電話株式会社 | 電子回路形成チツプ搭載装置 |
US5175060A (en) * | 1989-07-01 | 1992-12-29 | Ibiden Co., Ltd. | Leadframe semiconductor-mounting substrate having a roughened adhesive conductor circuit substrate and method of producing the same |
US5605863A (en) * | 1990-08-31 | 1997-02-25 | Texas Instruments Incorporated | Device packaging using heat spreaders and assisted deposition of wire bonds |
JP2002231736A (ja) * | 2001-01-31 | 2002-08-16 | Toppan Forms Co Ltd | Icチップを実装したアンテナの形成方法 |
JP4666296B2 (ja) * | 2001-01-31 | 2011-04-06 | トッパン・フォームズ株式会社 | Icチップを実装したアンテナの形成方法 |
US7230341B2 (en) | 2003-03-13 | 2007-06-12 | Seiko Epson Corporation | Electronic device and method of manufacturing the same, circuit board, and electronic instrument |
US7564142B2 (en) | 2003-03-13 | 2009-07-21 | Seiko Epson Corporation | Electronic device and method of manufacturing the same, circuit board, and electronic instrument |
JP2007510301A (ja) * | 2003-10-29 | 2007-04-19 | コンダクティブ・インクジェット・テクノロジー・リミテッド | 部品の電気的接続 |
JP2015012165A (ja) * | 2013-06-28 | 2015-01-19 | 富士機械製造株式会社 | 回路機器製造方法および、成形用の型 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5519936A (en) | Method of making an electronic package with a thermally conductive support member having a thin circuitized substrate and semiconductor device bonded thereto | |
US5773884A (en) | Electronic package with thermally conductive support member having a thin circuitized substrate and semiconductor device bonded thereto | |
US3591839A (en) | Micro-electronic circuit with novel hermetic sealing structure and method of manufacture | |
US5633533A (en) | Electronic package with thermally conductive support member having a thin circuitized substrate and semiconductor device bonded thereto | |
TW293940B (ja) | ||
KR100268610B1 (en) | Semiconductor device and manufacturing method thereof | |
KR970008446A (ko) | 반도체장치의 전극구조체와 그 형성방법 및 반도체장치의 실장체 및 반도체 장치 | |
JPH08288455A (ja) | 半導体装置およびその製造方法 | |
JPS60244035A (ja) | 半導体装置の製造方法 | |
US5382546A (en) | Semiconductor device and method of fabricating same, as well as lead frame used therein and method of fabricating same | |
JPS59154054A (ja) | ワイヤおよびそれを用いた半導体装置 | |
JP2000114295A (ja) | 半導体装置の製造方法 | |
JPH06169033A (ja) | 半導体チップの実装方法 | |
JPS62147735A (ja) | フリツプチツプの製法 | |
JPS63107156A (ja) | 樹脂封止型半導体装置 | |
JPS59175753A (ja) | 半導体装置およびリ−ドフレ−ム | |
KR20010004041A (ko) | 칩 사이즈 패키지의 제조 방법 | |
JPH0778903A (ja) | 混成集積回路におけるバイアス電圧の供給方法 | |
KR930011182A (ko) | 반도체 장치 및 그 제조방법 | |
KR940008317B1 (ko) | 반도체 칩 접속방법 | |
KR19980044255A (ko) | 플립 칩(Flip Chip)용 기판(Substrate)의 리드 핑거(Lead Finger)구조 | |
JPS62158336A (ja) | 電子部品の実装構造およびその実装方法 | |
TW402795B (en) | Semiconductor device capable of avoiding the offset of the wire and its manufacturing method | |
JPH0567708A (ja) | 半導体集積回路のパツケージ方法 | |
KR0163214B1 (ko) | 세라믹 기판을 이용한 집적회로 패키지 및 그의 제조방법 |