JPS58197736A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58197736A
JPS58197736A JP57080389A JP8038982A JPS58197736A JP S58197736 A JPS58197736 A JP S58197736A JP 57080389 A JP57080389 A JP 57080389A JP 8038982 A JP8038982 A JP 8038982A JP S58197736 A JPS58197736 A JP S58197736A
Authority
JP
Japan
Prior art keywords
layer
electrode
bonding
bonding pad
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57080389A
Other languages
English (en)
Other versions
JPH0126533B2 (ja
Inventor
Hiroaki Okizaki
沖崎　宏明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57080389A priority Critical patent/JPS58197736A/ja
Publication of JPS58197736A publication Critical patent/JPS58197736A/ja
Publication of JPH0126533B2 publication Critical patent/JPH0126533B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は牛導体装置の電極構造に関し、特に外部端子と
ベレットを金属線にて接続するためのペレット側のポン
ディングパッドの構造に関する。
従来、ベレットのポンディングパッドは第１図（畠）に
示すように、基板１上に形成された酸化膜２の上にアル
１ニウム電極３と、これに連続するアル建ニウム電極４
とを同時に形成し、パッジベージ、ンとして絶縁物５．
５′等を形成し、アルミニウム電極４を露出してポンデ
ィングパッドとして用い、ここにアル１＝りムもしくは
金線等の金属線６を用いてボンディングを行い、外部端
子との接続を取ってい友、この構造の場合、ペレット上
に水分が付着した状態で長時間（例えば数１０００時間
）Ｉ！用状ＷＡｔａけると、金属線６周辺のポンディン
グパッドが露光しているためにアル＜ニウムのイオン化
係数が大きいことも手伝って水分中にムｊ　イオンとし
て溶は込み、この部分のアル１ニウム電極４に第２図（
ｂ）の７．７′に示すような穴があき、アル々電極４と
アル建配線３とが電気的に開放状態となることがあった
。
本発明はポンディングパッド露出部分から浸入する水分
に対してポンディングパッドとこれに連続する配線域と
の間で断線が生じない構造の牛導体装置を提供すること
を目的とし、ポンディングパッドとこれに連続する配線
層との間で外部に露光されている部分の電極直下に湿気
に強い１例えば多結晶半導体層を設けたことｔ−特徴と
する。
以下図面管用いて本発明の一実施例全詳細に説明する。
第２図（１）に示すように基板１上に形成された酸化膜
２の上に不純物をドープされた低抵抗率の多結晶シリ；
ン８ｔ５０００ム程度形成し、アルミニウム配線３とア
ル建ニウム電極４を１〜２μｍ程度国時に連続して形成
する。その後パ、シベーシ璽ンとして絶縁物５．５’　
を形成する。多結晶シリ；ン８とアル建ニウム電極４お
よびアルミニウム配線３は電気的に接続されていなけれ
ばならない。
以上のような構造の場合、ペレット上に水分が付着した
状態で長時間使用状態音読けることによりて従来の構造
と同様に第２図（ｂ）に示すように７゜７′の穴があき
、アル電ニウム電極４とアルミニウム配線３との間が断
線しても、導電通路は多結晶シリコンを介して形成され
ており、シかもこの多結晶シリーンは、水分中に溶は込
まないため、９．９′の点以上には穴はあかない、従っ
て、アル建ニウム電極４−多結晶シリプン８−アルミニ
ウム配線３の経路で電気的に接続され、断線事故は発生
しない。
マえ１本構造の多結晶シリコンは、これ管用いて多層配
線、多結晶シリコン抵抗等を形成する場合に同時に形成
できるため、４Ｉに工程を追加する必費もなく、簡単に
形成できるという′長所を持っている。さらに多結晶シ
リコンには、どのような不純物管ドープしても問題はな
く、ドープされた多結晶シリーンを成長させても多結晶
シリコンにイオン注入、拡散等で不純物をドープしても
問題はない。即ち、簡単に導電層とすることができる。
危お、多結晶シリコンはポンディングパッドと配線層と
の間に位置する部分の直下にさえ設けておけばよい。
【図面の簡単な説明】
第１図（ａ）は従来のボンデングパッドの断面構造図、
（ｂ）は従来の構造でアル々ニウムが水分′中に溶は込
み断線した状態図會示す断面図、第２図（Ｊｌ）は本発
明の一実施例によるポンディングパッド部の断面構造＃
Ａ％（ｂ）は本発明の構造で、アル１＝ウムが水分中に
溶は込み、アル々ニウムのみ断線した時の状態を示す断
面図である。 １・・・・・・半導体基板％２・・・・・・酸化膜、３
・・・・・・アルミニウム配線層、４・・・・・・アル
電ニウム電極（ボンディングパッド）％　５６　Ｓ’・
・・・・・絶縁膜、６・・・・・・ボンディング線、７
．７’・・・・・・腐食による開孔。 訃・・・・・多結晶シリーン。 八 （ｄ） 第１図

Claims (1)

    【特許請求の範囲】
  1. 一牛導体基板上に設けられた金属線接続用の金属電極の
    直下に水分におかされない導電体層を形成したこと１ｉ
    −特徴とする牛導体装置。
JP57080389A 1982-05-13 1982-05-13 半導体装置 Granted JPS58197736A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080389A JPS58197736A (ja) 1982-05-13 1982-05-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080389A JPS58197736A (ja) 1982-05-13 1982-05-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS58197736A true JPS58197736A (ja) 1983-11-17
JPH0126533B2 JPH0126533B2 (ja) 1989-05-24

Family

ID=13716928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080389A Granted JPS58197736A (ja) 1982-05-13 1982-05-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS58197736A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218967A (ja) * 1991-03-20 1992-08-10 Rohm Co Ltd 半導体装置
US6603207B2 (en) 1995-07-14 2003-08-05 Matsushita Electric Industrial Co., Ltd. Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239378A (en) * 1975-09-23 1977-03-26 Seiko Epson Corp Silicon-gated mos type semiconductor device
JPS55140245A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Manufacture of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239378A (en) * 1975-09-23 1977-03-26 Seiko Epson Corp Silicon-gated mos type semiconductor device
JPS55140245A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Manufacture of semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218967A (ja) * 1991-03-20 1992-08-10 Rohm Co Ltd 半導体装置
US6603207B2 (en) 1995-07-14 2003-08-05 Matsushita Electric Industrial Co., Ltd. Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

Also Published As

Publication number Publication date
JPH0126533B2 (ja) 1989-05-24

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