JPS57202749A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57202749A
JPS57202749A JP56087635A JP8763581A JPS57202749A JP S57202749 A JPS57202749 A JP S57202749A JP 56087635 A JP56087635 A JP 56087635A JP 8763581 A JP8763581 A JP 8763581A JP S57202749 A JPS57202749 A JP S57202749A
Authority
JP
Japan
Prior art keywords
pad
extension
wiring
electrode
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56087635A
Other languages
Japanese (ja)
Inventor
Masanori Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56087635A priority Critical patent/JPS57202749A/en
Publication of JPS57202749A publication Critical patent/JPS57202749A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To acquire a semiconductor device excellent in corrosion resistance, by extending a wiring layer of corrosion resistant conductive material on the first insulation film, and arranging under a pad region of a junction lead electrode and an opening edge of the second insulation film. CONSTITUTION:A doped poly-Si wiring layer 23 is extended on the first SiO2 film 22 of an Si substrate 20 to connect an impurity layer 21 at one end. The second CVD SiO2 25 is bored at an extension 23b to expose a pad formation region 24. An opening 26a is made at the region 24 after piling a PSG 26. An Al pad 27 is provided to sinter and to connect a junction lead electrode 28. This constitution prevents the extension 23b between the electrode 28 and the wiring 23 from dixsonnecting, even if the opening 26a exposure is invaded by moisture and the pad 27 is corroded. If the pad 27 disappears, the electrode 28 is connected to the extension 23b directly. The corrosion resistance of the wiring 23 conditions a stable connection. The device increases in its reliability.
JP56087635A 1981-06-08 1981-06-08 Semiconductor device Pending JPS57202749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56087635A JPS57202749A (en) 1981-06-08 1981-06-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56087635A JPS57202749A (en) 1981-06-08 1981-06-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57202749A true JPS57202749A (en) 1982-12-11

Family

ID=13920431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56087635A Pending JPS57202749A (en) 1981-06-08 1981-06-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202749A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100559A (en) * 1982-11-30 1984-06-09 Mitsubishi Electric Corp Semiconductor device
JPS61225836A (en) * 1985-03-29 1986-10-07 Fujitsu Ltd Manufacture of wiring of semiconductor device
US4855257A (en) * 1984-05-23 1989-08-08 Hitachi, Ltd. Forming contacts to semiconductor device
US4974052A (en) * 1988-10-14 1990-11-27 Mitsubishi Denki Kabushiki Kaisha Plastic packaged semiconductor device
JP2013080841A (en) * 2011-10-04 2013-05-02 Seiko Instruments Inc Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100559A (en) * 1982-11-30 1984-06-09 Mitsubishi Electric Corp Semiconductor device
JPH038583B2 (en) * 1982-11-30 1991-02-06 Mitsubishi Electric Corp
US4855257A (en) * 1984-05-23 1989-08-08 Hitachi, Ltd. Forming contacts to semiconductor device
JPS61225836A (en) * 1985-03-29 1986-10-07 Fujitsu Ltd Manufacture of wiring of semiconductor device
US4974052A (en) * 1988-10-14 1990-11-27 Mitsubishi Denki Kabushiki Kaisha Plastic packaged semiconductor device
JP2013080841A (en) * 2011-10-04 2013-05-02 Seiko Instruments Inc Semiconductor device

Similar Documents

Publication Publication Date Title
KR950015603A (en) Conductive Layer for Semiconductor Devices
KR840002162A (en) Semiconductor device
JPS57202749A (en) Semiconductor device
US3746945A (en) Schottky diode clipper device
US5029324A (en) Semiconductor device having a semiconductive protection layer
JPS56148848A (en) Beam lead type semiconductor device
JPS5480090A (en) Semiconductor device
JPS56100441A (en) Semiconductor ic device with protection element and manufacture thereof
JPS54128296A (en) Wiring structure and its manufacture
JPH0518259B2 (en)
JPS58197736A (en) Semiconductor device
JPS556869A (en) Semiconductor device
JPS55157240A (en) Semiconductor device
JP2781688B2 (en) Semiconductor device
JPS5740967A (en) Integrated circuit device
JPS56153777A (en) Semiconductor capacity element
JPS558012A (en) Semi-conductor device
JPS5596673A (en) Semiconductor device
JPS55111161A (en) Semiconductor device and manufacturing method thereof
JPS6450572A (en) Semiconductor radiation ray detection element
JPS54160186A (en) Semiconductor integrated circuit device
JPS6437873A (en) Semiconductor device and manufacture thereof
JPS54105486A (en) Semiconductor unit
JPS57122532A (en) Semiconductor device
JPS59138384A (en) Semiconductor pressure sensor