DE69535740D1 - Flüssigkristall-Anzeigevorrichtung, Halbleitervorrichtungen und Verfahren zu ihrer Herstellung - Google Patents

Flüssigkristall-Anzeigevorrichtung, Halbleitervorrichtungen und Verfahren zu ihrer Herstellung

Info

Publication number
DE69535740D1
DE69535740D1 DE69535740T DE69535740T DE69535740D1 DE 69535740 D1 DE69535740 D1 DE 69535740D1 DE 69535740 T DE69535740 T DE 69535740T DE 69535740 T DE69535740 T DE 69535740T DE 69535740 D1 DE69535740 D1 DE 69535740D1
Authority
DE
Germany
Prior art keywords
making
methods
liquid crystal
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69535740T
Other languages
German (de)
English (en)
Inventor
Kikuo Ono
Makoto Tsumura
Kazuhiro Ogawa
Hiroki Sakuta
Masahiko Suzuki
Toshiki Kaneko
Yoshiaki Nakayoshi
Kenichi Onisawa
Kenichi Hashimoto
Tetsuro Minemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17511394A external-priority patent/JP3524162B2/ja
Priority claimed from JP19938894A external-priority patent/JPH0864829A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69535740D1 publication Critical patent/DE69535740D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
DE69535740T 1994-07-27 1995-07-26 Flüssigkristall-Anzeigevorrichtung, Halbleitervorrichtungen und Verfahren zu ihrer Herstellung Expired - Lifetime DE69535740D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17511394A JP3524162B2 (ja) 1994-07-27 1994-07-27 液晶表示装置
JP19938894A JPH0864829A (ja) 1994-08-24 1994-08-24 半導体装置とこれを用いた液晶表示装置

Publications (1)

Publication Number Publication Date
DE69535740D1 true DE69535740D1 (de) 2008-05-15

Family

ID=26496478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69535740T Expired - Lifetime DE69535740D1 (de) 1994-07-27 1995-07-26 Flüssigkristall-Anzeigevorrichtung, Halbleitervorrichtungen und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (2) US5668379A (enExample)
EP (1) EP0694804B1 (enExample)
KR (1) KR100423564B1 (enExample)
CN (1) CN1092343C (enExample)
DE (1) DE69535740D1 (enExample)
TW (1) TW321731B (enExample)

Families Citing this family (143)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960038466A (ko) * 1995-04-13 1996-11-21 김광호 오프전류를 감소시킨 액정표시장치 및 그의 제조방법
JPH0964366A (ja) * 1995-08-23 1997-03-07 Toshiba Corp 薄膜トランジスタ
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
JP3737176B2 (ja) 1995-12-21 2006-01-18 株式会社半導体エネルギー研究所 液晶表示装置
KR100195269B1 (ko) * 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
JP3413000B2 (ja) * 1996-01-25 2003-06-03 株式会社東芝 アクティブマトリックス液晶パネル
JPH09265113A (ja) * 1996-03-28 1997-10-07 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方 法
JP3961044B2 (ja) * 1996-05-14 2007-08-15 シャープ株式会社 電子回路装置
KR100247628B1 (ko) * 1996-10-16 2000-03-15 김영환 액정 표시 소자 및 그 제조방법
JP3404562B2 (ja) * 1996-11-18 2003-05-12 株式会社日立製作所 アクティブマトリクス型液晶表示装置
KR100228431B1 (ko) * 1996-12-30 1999-11-01 김영환 액정 표시 소자 및 그 제조방법
JPH10229197A (ja) * 1997-02-17 1998-08-25 Sanyo Electric Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法
KR100238795B1 (ko) * 1997-03-03 2000-01-15 구본준 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법
US5909263A (en) * 1997-11-06 1999-06-01 Samsung Electronics Co., Ltd. Liquid crystal display panel array structure at a pixel contact hole
US6215541B1 (en) 1997-11-20 2001-04-10 Samsung Electronics Co., Ltd. Liquid crystal displays and manufacturing methods thereof
KR19990048947A (ko) 1997-12-11 1999-07-05 김영환 색변화를 제거하며 광시야각을 실현하는 전극을 가진 액정표시 소자
TW565719B (en) * 1998-03-13 2003-12-11 Toshiba Corp Manufacturing method of array substrate for display device
TW383427B (en) * 1998-04-03 2000-03-01 United Microelectronics Corp Method for etching tantalum oxide
KR20000003318A (ko) 1998-06-27 2000-01-15 김영환 개구율이 개선된 액정 표시 장치
TW559683B (en) * 1998-09-21 2003-11-01 Advanced Display Kk Liquid display device and manufacturing process therefor
JP3401589B2 (ja) * 1998-10-21 2003-04-28 株式会社アドバンスト・ディスプレイ Ｔｆｔアレイ基板および液晶表示装置
ATE433106T1 (de) * 1998-12-23 2009-06-15 Glaxo Group Ltd Bestimmungsmethode fur liganden der nuklearen rezeptoren
JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
KR100304261B1 (ko) * 1999-04-16 2001-09-26 윤종용 테이프 캐리어 패키지, 그를 포함한 액정표시패널 어셈블리,그를 채용한 액정표시장치 및 이들의 조립 방법
US7339568B2 (en) * 1999-04-16 2008-03-04 Samsung Electronics Co., Ltd. Signal transmission film and a liquid crystal display panel having the same
US6111619A (en) * 1999-05-27 2000-08-29 Sharp Laboratories Of America, Inc. Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
JP3916349B2 (ja) * 1999-06-15 2007-05-16 株式会社アドバンスト・ディスプレイ 液晶表示装置
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
TW490713B (en) * 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR100798761B1 (ko) * 1999-09-07 2008-01-29 가부시키가이샤 히타치세이사쿠쇼 액정표시장치
KR100673331B1 (ko) * 2000-02-19 2007-01-23 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) * 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US6900084B1 (en) 2000-05-09 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display device
JP4342711B2 (ja) * 2000-09-20 2009-10-14 株式会社日立製作所 液晶表示装置の製造方法
KR100386458B1 (ko) * 2000-12-20 2003-06-02 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
JP4651826B2 (ja) * 2001-01-31 2011-03-16 Ｎｅｃ液晶テクノロジー株式会社 反射型表示装置及びその製造方法
SG179310A1 (en) * 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100731037B1 (ko) * 2001-05-07 2007-06-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR100792466B1 (ko) * 2001-05-21 2008-01-08 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그의 제조방법
KR20020094810A (ko) * 2001-06-13 2002-12-18 엘지.필립스 엘시디 주식회사 액정표시장치의 어레이 기판 및 제조 방법
KR100431242B1 (ko) * 2001-07-10 2004-05-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US7045373B2 (en) * 2001-09-25 2006-05-16 Hannstar Display Corp. Manufacturing method for in-plane switching mode LCD unit with fewer masking process
TWI237141B (en) * 2001-09-25 2005-08-01 Hannstar Display Corp Manufacturing method for in-plane switching mode liquid crystal display (LCD) unit
JP3669351B2 (ja) * 2001-10-04 2005-07-06 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4305811B2 (ja) 2001-10-15 2009-07-29 株式会社日立製作所 液晶表示装置、画像表示装置およびその製造方法
KR100391157B1 (ko) * 2001-10-25 2003-07-16 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
JP3870897B2 (ja) * 2002-01-07 2007-01-24 セイコーエプソン株式会社 電気光学装置及び電子機器
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
CN1229682C (zh) * 2002-05-21 2005-11-30 精工爱普生株式会社 电光装置和电子设备
KR20030093519A (ko) 2002-06-03 2003-12-11 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
US6933241B2 (en) * 2002-06-06 2005-08-23 Nec Corporation Method for forming pattern of stacked film
US7303945B2 (en) * 2002-06-06 2007-12-04 Nec Corporation Method for forming pattern of stacked film and thin film transistor
US6933529B2 (en) * 2002-07-11 2005-08-23 Lg. Philips Lcd Co., Ltd. Active matrix type organic light emitting diode device and thin film transistor thereof
KR100828531B1 (ko) * 2002-07-26 2008-05-13 삼성전자주식회사 액정 표시 장치
KR100870016B1 (ko) * 2002-08-21 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 액정 표시장치
CN1267780C (zh) 2002-11-11 2006-08-02 Lg.飞利浦Lcd有限公司 用于液晶显示器的阵列基板及其制造方法
KR100971955B1 (ko) * 2002-11-11 2010-07-23 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
KR100518270B1 (ko) * 2002-12-18 2005-10-04 엘지.필립스 엘시디 주식회사 인쇄방식에 의한 패턴형성방법
US7190000B2 (en) * 2003-08-11 2007-03-13 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
KR100543001B1 (ko) * 2003-09-03 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터 및 액티브 매트릭스 평판 표시 장치
JP4297775B2 (ja) * 2003-12-08 2009-07-15 シャープ株式会社 液晶表示装置
KR101086477B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 제조 방법
KR101086478B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
KR101057779B1 (ko) * 2004-06-05 2011-08-19 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101024651B1 (ko) * 2004-06-05 2011-03-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 모기판 및 그 제조 방법
KR101037085B1 (ko) * 2004-06-05 2011-05-26 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101121620B1 (ko) * 2004-06-05 2012-02-28 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
KR101116816B1 (ko) 2004-06-05 2012-02-28 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101076426B1 (ko) * 2004-06-05 2011-10-25 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101043675B1 (ko) * 2004-06-05 2011-06-22 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101002347B1 (ko) * 2004-06-24 2010-12-21 엘지디스플레이 주식회사 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법
KR101116817B1 (ko) * 2004-06-30 2012-02-28 엘지디스플레이 주식회사 유기 절연막을 포함하는 액정 패널 및 그 제조 방법
KR20060018121A (ko) * 2004-08-23 2006-02-28 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
US7859606B2 (en) 2004-09-15 2010-12-28 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101147261B1 (ko) 2004-12-04 2012-05-18 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101139522B1 (ko) 2004-12-04 2012-05-07 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법
KR101107239B1 (ko) * 2004-12-23 2012-01-25 엘지디스플레이 주식회사 액정 표시 패널 및 그 제조방법
KR101125248B1 (ko) 2004-12-23 2012-03-21 엘지디스플레이 주식회사 반투과형 컬러필터 기판 및 그 제조방법
KR101085137B1 (ko) * 2004-12-23 2011-11-21 엘지디스플레이 주식회사 액정 표시 패널 및 그 제조방법
KR101085138B1 (ko) * 2004-12-24 2011-11-21 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
KR101107245B1 (ko) * 2004-12-24 2012-01-25 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
KR101107246B1 (ko) * 2004-12-24 2012-01-25 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101085132B1 (ko) * 2004-12-24 2011-11-18 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
KR101066492B1 (ko) * 2004-12-24 2011-09-21 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR20060073826A (ko) * 2004-12-24 2006-06-29 삼성전자주식회사 박막 트랜지스터 표시판
KR101107265B1 (ko) * 2004-12-31 2012-01-19 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법과, 그를이용한 액정 패널 및 그 제조 방법
KR101107267B1 (ko) * 2004-12-31 2012-01-19 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법과, 그를 이용한액정 패널 및 그 제조 방법
KR101107682B1 (ko) * 2004-12-31 2012-01-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
KR101125254B1 (ko) * 2004-12-31 2012-03-21 엘지디스플레이 주식회사 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법과, 그를 이용한 액정 패널 및 그 제조 방법
KR101107270B1 (ko) * 2004-12-31 2012-01-19 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법과, 그를 이용한액정 패널 및 그 제조 방법
KR101107269B1 (ko) * 2004-12-31 2012-01-19 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법과, 그를이용한 액정 패널 및 그 제조 방법
KR101201017B1 (ko) * 2005-06-27 2012-11-13 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101182570B1 (ko) * 2005-06-30 2012-09-12 엘지디스플레이 주식회사 쇼트 불량 리페어 방법 및 그를 이용한 액정 표시 장치의제조 방법
KR101225440B1 (ko) * 2005-06-30 2013-01-25 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101167312B1 (ko) * 2005-06-30 2012-07-19 엘지디스플레이 주식회사 미세 패턴 형성 방법과 그를 이용한 액정 표시 장치 및 그제조 방법
KR101269337B1 (ko) * 2005-09-30 2013-05-29 엘지디스플레이 주식회사 반사투과형 액정 표시 장치 및 그 제조 방법
US8233124B2 (en) * 2005-12-28 2012-07-31 Lg Display Co., Ltd. Liquid crystal display device
JP2007178808A (ja) * 2005-12-28 2007-07-12 Lg Philips Lcd Co Ltd 液晶表示装置
JP5095941B2 (ja) * 2005-12-28 2012-12-12 エルジー ディスプレイ カンパニー リミテッド 液晶表示装置
JP5452834B2 (ja) * 2005-12-28 2014-03-26 エルジー ディスプレイ カンパニー リミテッド 液晶表示装置
US7667809B2 (en) * 2005-12-28 2010-02-23 Lg. Display Co., Ltd. FFS mode liquid crystal display device and method of fabricating the same
US7667808B2 (en) * 2005-12-28 2010-02-23 Lg Display Co., Ltd. Liquid crystal display device and method of driving the same
JP5044120B2 (ja) * 2005-12-28 2012-10-10 エルジー ディスプレイ カンパニー リミテッド 液晶表示装置
TWI327239B (en) * 2006-01-20 2010-07-11 Au Optronics Corp Pixel and liquid crystal display and method for manufacturing the same
KR101230312B1 (ko) * 2006-04-11 2013-02-06 삼성디스플레이 주식회사 액정 표시 장치
EP2008264B1 (en) * 2006-04-19 2016-11-16 Ignis Innovation Inc. Stable driving scheme for active matrix displays
TWI858965B (zh) 2006-05-16 2024-10-11 日商半導體能源研究所股份有限公司 液晶顯示裝置
KR101282893B1 (ko) * 2006-06-30 2013-07-05 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
TW200816486A (en) * 2006-09-22 2008-04-01 Wintek Corp Thin-film transistor array and method for manufacturing the same
KR101446226B1 (ko) * 2006-11-27 2014-10-01 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조 방법
TWI339303B (en) * 2006-12-15 2011-03-21 Chimei Innolux Corp Liquid crystal panel
JP5266645B2 (ja) * 2007-01-31 2013-08-21 三菱電機株式会社 薄膜トランジスタと該薄膜トランジスタを用いた表示装置
TWM317990U (en) * 2007-03-13 2007-09-01 Dosun Solar Technology Co Ltd Structure of bicycle pedal having function of illumination
US7635864B2 (en) * 2007-11-27 2009-12-22 Lg Electronics Inc. Organic light emitting device
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
CN100587944C (zh) * 2007-12-26 2010-02-03 友达光电股份有限公司 像素结构的制作方法
WO2009125459A1 (ja) * 2008-04-08 2009-10-15 シャープ株式会社 半導体装置及びその製造方法
JP2010245366A (ja) * 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
TWI418903B (zh) * 2009-09-30 2013-12-11 Au Optronics Corp 陣列基板及其製造方法
TWI427606B (zh) * 2009-10-20 2014-02-21 Au Optronics Corp 具畫素資料自我保持機能之液晶顯示裝置與其靜止模式運作方法
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR101736319B1 (ko) * 2010-12-14 2017-05-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP2013092613A (ja) * 2011-10-25 2013-05-16 Japan Display East Co Ltd 液晶表示装置及びその製造方法
EP2928995B1 (en) 2012-12-05 2016-08-24 Firmenich SA Odorants of the violet type
CN103293785B (zh) * 2012-12-24 2016-05-18 上海天马微电子有限公司 Tn型液晶显示装置及其触控方法
DE112013007646T5 (de) * 2013-11-27 2016-08-11 Landmark Graphics Corporation Verfahren und System zur gradationellen Klassifizierung seismischen Volumens
KR102202975B1 (ko) * 2014-07-09 2021-01-14 동우 화인켐 주식회사 후막 패턴 구조 및 그의 형성 방법
CN104362155B (zh) * 2014-11-24 2017-12-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104779256B (zh) * 2015-04-09 2018-08-24 深圳市华星光电技术有限公司 阵列基板及其制备方法、液晶面板
KR20170073774A (ko) * 2015-12-18 2017-06-29 삼성디스플레이 주식회사 표시 장치
CN107092111B (zh) * 2016-02-17 2021-06-11 群创光电股份有限公司 主动元件阵列基板以及显示面板
CN109244083B (zh) * 2018-09-05 2020-12-08 京东方科技集团股份有限公司 显示背板及其制造方法、显示面板及可穿戴设备
CN111524903B (zh) * 2020-04-23 2023-03-28 深圳市华星光电半导体显示技术有限公司 Goa阵列基板及制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161764A (ja) 1985-01-11 1986-07-22 Nec Corp 薄膜トランジスタの製造方法
EP0211402B1 (en) * 1985-08-02 1991-05-08 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
US5170244A (en) * 1986-03-06 1992-12-08 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device
JP2655865B2 (ja) * 1988-03-16 1997-09-24 株式会社日立製作所 液晶表示装置の製造方法
JP2528967B2 (ja) * 1989-07-04 1996-08-28 シャープ株式会社 アクティブマトリクス表示装置
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
JP2871818B2 (ja) * 1990-07-27 1999-03-17 株式会社日立製作所 液晶表示装置
JP2875363B2 (ja) * 1990-08-08 1999-03-31 株式会社日立製作所 液晶表示装置
JPH053318A (ja) * 1991-06-26 1993-01-08 Stanley Electric Co Ltd 薄膜トランジスタと薄膜トランジスタの製造方法
NL194848C (nl) * 1992-06-01 2003-04-03 Samsung Electronics Co Ltd Vloeibaar-kristalindicatorinrichting.
JPH05333378A (ja) * 1992-06-04 1993-12-17 Hitachi Ltd 薄膜デバイスおよびその製造方法
EP0592063A3 (en) * 1992-09-14 1994-07-13 Toshiba Kk Active matrix liquid crystal display device

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CN1121619A (zh) 1996-05-01
KR960006062A (ko) 1996-02-23
EP0694804B1 (en) 2008-04-02
CN1092343C (zh) 2002-10-09
US5668379A (en) 1997-09-16
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