DE68919570T2 - Dynamische Speicheranordnung mit wahlfreiem Zugriff vom Metall-Isolator-Halbleiter-Typ. - Google Patents

Dynamische Speicheranordnung mit wahlfreiem Zugriff vom Metall-Isolator-Halbleiter-Typ.

Info

Publication number
DE68919570T2
DE68919570T2 DE68919570T DE68919570T DE68919570T2 DE 68919570 T2 DE68919570 T2 DE 68919570T2 DE 68919570 T DE68919570 T DE 68919570T DE 68919570 T DE68919570 T DE 68919570T DE 68919570 T2 DE68919570 T2 DE 68919570T2
Authority
DE
Germany
Prior art keywords
insulator
metal
memory device
random access
access memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919570T
Other languages
English (en)
Other versions
DE68919570D1 (de
Inventor
Taiji Ema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68919570D1 publication Critical patent/DE68919570D1/de
Publication of DE68919570T2 publication Critical patent/DE68919570T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
DE68919570T 1988-06-29 1989-06-14 Dynamische Speicheranordnung mit wahlfreiem Zugriff vom Metall-Isolator-Halbleiter-Typ. Expired - Fee Related DE68919570T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63162189A JP2682021B2 (ja) 1988-06-29 1988-06-29 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE68919570D1 DE68919570D1 (de) 1995-01-12
DE68919570T2 true DE68919570T2 (de) 1995-04-13

Family

ID=15749695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919570T Expired - Fee Related DE68919570T2 (de) 1988-06-29 1989-06-14 Dynamische Speicheranordnung mit wahlfreiem Zugriff vom Metall-Isolator-Halbleiter-Typ.

Country Status (5)

Country Link
US (1) US5025294A (de)
EP (1) EP0352893B1 (de)
JP (1) JP2682021B2 (de)
KR (1) KR920010193B1 (de)
DE (1) DE68919570T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216267A (en) * 1989-05-10 1993-06-01 Samsung Electronics Co., Ltd. Stacked capacitor dynamic random access memory with a sloped lower electrode
KR920007358B1 (ko) * 1990-03-28 1992-08-31 금성일렉트론 주식회사 고집적 메모리 셀 및 코아 어레이 구조
JPH0834257B2 (ja) * 1990-04-20 1996-03-29 株式会社東芝 半導体メモリセル
KR920008294B1 (ko) * 1990-05-08 1992-09-26 금성일렉트론 주식회사 반도체 장치의 제조방법
KR920009748B1 (ko) * 1990-05-31 1992-10-22 삼성전자 주식회사 적층형 캐패시터셀의 구조 및 제조방법
JP2564972B2 (ja) * 1990-06-18 1996-12-18 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH07122989B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体記憶装置
JPH06112433A (ja) * 1990-12-06 1994-04-22 Nec Corp 半導体メモリセルおよびその形成方法
JP2660111B2 (ja) * 1991-02-13 1997-10-08 株式会社東芝 半導体メモリセル
JP2564046B2 (ja) * 1991-02-13 1996-12-18 株式会社東芝 半導体記憶装置
DE69222793T2 (de) * 1991-03-14 1998-03-12 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
JP3181311B2 (ja) * 1991-05-29 2001-07-03 株式会社東芝 半導体記憶装置
US5428235A (en) * 1991-06-14 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device including improved connection structure to FET elements
JP3464803B2 (ja) * 1991-11-27 2003-11-10 株式会社東芝 半導体メモリセル
JPH05218349A (ja) * 1992-02-04 1993-08-27 Sony Corp 半導体記憶装置
JP3241106B2 (ja) * 1992-07-17 2001-12-25 株式会社東芝 ダイナミック型半導体記憶装置及びその製造方法
US5838038A (en) * 1992-09-22 1998-11-17 Kabushiki Kaisha Toshiba Dynamic random access memory device with the combined open/folded bit-line pair arrangement
JP3158017B2 (ja) * 1994-08-15 2001-04-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 相互結線配列および相互結線配列用の導線を形成する方法
US5866928A (en) * 1996-07-16 1999-02-02 Micron Technology, Inc. Single digit line with cell contact interconnect
JP4086926B2 (ja) * 1997-01-29 2008-05-14 富士通株式会社 半導体装置及びその製造方法
DE10011672A1 (de) * 2000-03-10 2001-09-20 Infineon Technologies Ag Integrierte DRAM-Speicherzelle sowie DRAM-Speicher
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS57201067A (en) * 1981-06-04 1982-12-09 Nec Corp Semiconductor memory cell
GB2143675B (en) * 1983-07-11 1987-05-07 Nat Semiconductor Corp High efficiency dynamic random access memory cell and process for fabricating it
JPS6070743A (ja) * 1983-09-27 1985-04-22 Fujitsu Ltd 半導体装置の製造方法
JPS59210663A (ja) * 1984-04-16 1984-11-29 Hitachi Ltd 半導体メモリ装置
JPS61140171A (ja) * 1984-12-13 1986-06-27 Toshiba Corp 半導体記憶装置
JPS61183955A (ja) * 1985-02-08 1986-08-16 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
JPS61183952A (ja) * 1985-02-09 1986-08-16 Fujitsu Ltd 半導体記憶装置及びその製造方法
JPH0736437B2 (ja) * 1985-11-29 1995-04-19 株式会社日立製作所 半導体メモリの製造方法
JPS62155558A (ja) * 1985-12-27 1987-07-10 Nec Corp Ｍｉｓ型半導体記憶装置

Also Published As

Publication number Publication date
JPH0210867A (ja) 1990-01-16
KR910001758A (ko) 1991-01-31
US5025294A (en) 1991-06-18
DE68919570D1 (de) 1995-01-12
KR920010193B1 (ko) 1992-11-19
EP0352893B1 (de) 1994-11-30
EP0352893A1 (de) 1990-01-31
JP2682021B2 (ja) 1997-11-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee