KR900012274A - 다이나믹 랜덤억세스 메모리장치 - Google Patents

다이나믹 랜덤억세스 메모리장치

Info

Publication number
KR900012274A
KR900012274A KR1019900000313A KR900000313A KR900012274A KR 900012274 A KR900012274 A KR 900012274A KR 1019900000313 A KR1019900000313 A KR 1019900000313A KR 900000313 A KR900000313 A KR 900000313A KR 900012274 A KR900012274 A KR 900012274A
Authority
KR
South Korea
Prior art keywords
memory device
random access
access memory
dynamic random
dynamic
Prior art date
Application number
KR1019900000313A
Other languages
English (en)
Other versions
KR940007726B1 (ko
Inventor
또시오 야마다
미찌히로 이노우에
Original Assignee
마쓰시다 덴기 산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쓰시다 덴기 산교 가부시기가이샤 filed Critical 마쓰시다 덴기 산교 가부시기가이샤
Publication of KR900012274A publication Critical patent/KR900012274A/ko
Application granted granted Critical
Publication of KR940007726B1 publication Critical patent/KR940007726B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
KR1019900000313A 1989-01-12 1990-01-12 다이나믹 랜덤억세스 메모리장치 KR940007726B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1005239A JPH07111830B2 (ja) 1989-01-12 1989-01-12 半導体記憶装置
JP89-5239 1989-01-12

Publications (2)

Publication Number Publication Date
KR900012274A true KR900012274A (ko) 1990-08-03
KR940007726B1 KR940007726B1 (ko) 1994-08-24

Family

ID=11605648

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000313A KR940007726B1 (ko) 1989-01-12 1990-01-12 다이나믹 랜덤억세스 메모리장치

Country Status (3)

Country Link
US (3) US5128896A (ko)
JP (1) JPH07111830B2 (ko)
KR (1) KR940007726B1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5398206A (en) * 1990-03-02 1995-03-14 Hitachi, Ltd. Semiconductor memory device with data error compensation
JP3373534B2 (ja) * 1991-07-02 2003-02-04 株式会社東芝 半導体記憶装置
JPH0536277A (ja) * 1991-07-30 1993-02-12 Fujitsu Ltd 半導体メモリ装置
US5301160A (en) * 1992-02-24 1994-04-05 Texas Instruments Incorporated Computer including an integrated circuit having a low power selection control arrangement
KR950011643B1 (ko) * 1992-04-17 1995-10-07 현대전자산업주식회사 반도체장치 및 그 제조방법
JPH05342872A (ja) * 1992-06-05 1993-12-24 Oki Micro Design Miyazaki:Kk 半導体記憶装置
US5546036A (en) * 1992-08-27 1996-08-13 Siemens Aktiengesellschaft Circuit array for amplifying and holding data with different supply
US6016390A (en) * 1998-01-29 2000-01-18 Artisan Components, Inc. Method and apparatus for eliminating bitline voltage offsets in memory devices
EP1039470A3 (en) 1999-03-25 2000-11-29 SANYO ELECTRIC Co., Ltd. Semiconductor memory device
JP2001006373A (ja) * 1999-06-23 2001-01-12 Hitachi Ltd 伝送回路とこれを用いた半導体集積回路及び半導体メモリ
US7145819B2 (en) * 2001-06-11 2006-12-05 Analog Devices, Inc. Method and apparatus for integrated circuit with DRAM
US6781892B2 (en) * 2001-12-26 2004-08-24 Intel Corporation Active leakage control in single-ended full-swing caches
US7206218B1 (en) * 2005-01-31 2007-04-17 Kabushiki Kaisha Toshiba Stable memory cell with improved operation speed
KR20160069147A (ko) * 2014-12-08 2016-06-16 에스케이하이닉스 주식회사 데이터 감지 증폭기 및 이를 포함하는 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS5694574A (en) * 1979-12-27 1981-07-31 Toshiba Corp Complementary mos sense circuit
US4816706A (en) * 1987-09-10 1989-03-28 International Business Machines Corporation Sense amplifier with improved bitline precharging for dynamic random access memory

Also Published As

Publication number Publication date
USRE35430E (en) 1997-01-21
JPH07111830B2 (ja) 1995-11-29
US5151878A (en) 1992-09-29
US5128896A (en) 1992-07-07
KR940007726B1 (ko) 1994-08-24
JPH02185793A (ja) 1990-07-20

Similar Documents

Publication Publication Date Title
DE69117001T2 (de) Synchroner dynamischer Direktzugriffspeicher
KR890008991A (ko) 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법
DE69133572D1 (de) Halbleiterbauelement mit dynamischem Arbeitsspeicher (DRAM)
KR900012276A (ko) 다이내믹형 반도체기억장치
DE69329788T2 (de) Direktzugriffspeicherentwurf
DE3876415D1 (de) Dynamischer direktzugriffsspeicher.
DE69429289T2 (de) Synchroner dynamischer Direktzugriffspeicher
DE69016094D1 (de) Video-Direktzugriffsspeicher.
NL193124B (nl) Statische willekeurig toegankelijke geheugeninrichting.
DE69229763D1 (de) Speicherzugriffsvorrichtung
DE69027886D1 (de) Direktzugriffsspeicher vom dynamischen Typ
KR910001758A (ko) 금속 절연물 반도체형 다이나믹 랜덤 액세스 메모리 장치
KR930007835B1 (en) Dynamic random access memory device
DE69016697D1 (de) Video-Direktzugriffsspeicher.
DE69125542D1 (de) Dynamischer Direktzugriffspeicher
DE68919718T2 (de) Pseudo-statischer Direktzugriffspeicher.
DE69028625T2 (de) Dynamische Speichereinrichtung mit wahlfreiem Zugriff
DE69031243T2 (de) Dynamische wahlfreie Speichereinrichtung
DE3851416D1 (de) Statische Direktzugriffshalbleiterspeicheranordnung.
KR900012274A (ko) 다이나믹 랜덤억세스 메모리장치
DE69120447D1 (de) Halbleiterspeicheranordnung von dynamischem Typus
DE69625038T2 (de) Dynamischer Direktzugriffsspeicher
DE69119203D1 (de) Dynamische Direktzugriffspeicheranordnung mit verbesserter Auffrischungsschaltung
DE69620528D1 (de) Dynamischer Direktzugriffspeicher
DE68925360D1 (de) Schneller statischer Direktzugriffsspeicher

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

E902 Notification of reason for refusal
G160 Decision to publish patent application
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090807

Year of fee payment: 16

EXPY Expiration of term